Vishay IRF840A, SiHF840A Data Sheet

IRF840A, SiHF840A

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

• Low Gate Charge Qg Results in Simple Drive

VDS (V)

500

Requirement

Available

RDS(on) ( )

VGS = 10 V

0.85

• Improved Gate, Avalanche and Dynamic dV/dt

RoHS*

Qg (Max.) (nC)

Ruggedness

COMPLIANT

Qgs (nC)

9.0

• Fully Characterized Capacitance and Avalanche Voltage

Qgd (nC)

and Current

Configuration

Single

• Effective Coss Specified

• Compliant to RoHS Directive 2002/95/EC

TO-220AB

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptable Power Supply

• High Speed Power Switching

TYPICAL SMPS TOPOLOGIES

• Two Transistor Forward

N-Channel MOSFET

• Half Bridge

• Full Bridge

ORDERING INFORMATION

Package

TO-220AB

Lead (Pb)-free

IRF840APbF

SiHF840A-E3

SnPb

IRF840A

SiHF840A

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

500

Gate-Source Voltage

VGS

± 30

Continuous Drain Current

VGS at 10 V

TC = 25 °C

8.0

TC = 100 °C

5.1

Pulsed Drain Currenta

IDM

Linear Derating Factor

1.0

W/°C

Single Pulse Avalanche Energyb

EAS

510

Repetitive Avalanche Currenta

IAR

8.0

Repetitive Avalanche Energya

EAR

Maximum Power Dissipation

TC = 25 °C

125

Peak Diode Recovery dV/dtc

dV/dt

5.0

V/ns

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

300d

Mounting Torque

6-32 or M3 screw

lbf · in

1.1

N · m

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. VDD = 50 V, starting TJ = 25 °C, L = 16 mH, Rg = 25 , IAS = 8.0 A (see fig. 12).

c. ISD 8.0 A, dI/dt 100 A/μs, VDD VDS, TJ 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91065

www.vishay.com

S11-0506-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF840A, SiHF840A

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER	SYMBOL	TYP.	MAX.	UNIT

Maximum Junction-to-Ambient	RthJA	-	62
Case-to-Sink, Flat, Greased Surface	RthCS	0.50	-	°C/W
Maximum Junction-to-Case (Drain)	RthJC	-	1.0

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

500

VDS Temperature Coefficient

VDS/TJ

Reference to 25 °C, ID = 1 mA

0.58

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.0

4.0

Gate-Source Leakage

IGSS

VGS = ± 30 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 500 V, VGS = 0 V

μA

VDS = 400 V, VGS = 0 V, TJ = 125 °C

250

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 4.8 Ab

0.85

Forward Transconductance

gfs

VDS = 50 V, ID = 4.8 Ab

3.7

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

1018

Output Capacitance

Coss

VDS = 25 V,

155

f = 1.0 MHz, see fig. 5

Reverse Transfer Capacitance

Crss

8.0

Output Capacitance

Coss

VGS = 0 V; VDS = 1.0 V, f = 1.0 MHz

1490

Output Capacitance

Coss

VGS = 0 V; VDS = 400 V, f = 1.0 MHz

Effective Output Capacitance

Coss eff.

VGS = 0 V; VDS = 0 V to 400 Vc

Total Gate Charge

ID = 8 A, VDS = 400 V,

Gate-Source Charge

Qgs

VGS = 10 V

9.0

see fig. 6 and 13b

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

Rise Time

VDD = 250 V, ID = 8 A

Turn-Off Delay Time

td(off)

Rg = 9.1 , RD = 31 , see fig. 10b

Fall Time

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

8.0

showing the

integral reverse

Pulsed Diode Forward Currenta

p - n junction diode

Body Diode Voltage

VSD

TJ = 25 °C, IS = 8 A, VGS = 0 Vb

2.0

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 8 A, dI/dt = 100 A/μsb

422

633

Body Diode Reverse Recovery Charge

Qrr

2.16

3.24

μC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width 300 μs; duty cycle 2 %.

c.Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.

www.vishay.com	Document Number: 91065
2	S11-0506-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF840A, SiHF840A

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

	102	VGS
	Top	VGS
<![if ! IE]> <![endif]>(A)	Top	15 V
<![if ! IE]> <![endif]>(A)		10 V
<![if ! IE]> <![endif]>Current		10 V
		8.0 V
	10	7.0 V
	10	6.0 V
<![if ! IE]> <![endif]>-to-Source		5.5 V
		5.0 V
	Bottom	4.5 V
	1		4.5 V
<![if ! IE]> <![endif]>, Drain			4.5 V
<![if ! IE]> <![endif]>, Drain
<![if ! IE]> <![endif]>D			20 µs Pulse Width
<![if ! IE]> <![endif]>I			20 µs Pulse Width
	0.1		TC = 25 °C
	0.1
	0.1	1	10	102

91065_01

VDS, Drain-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics, TC = 25 °C

	102	VGS
	Top	VGS
<![if ! IE]> <![endif]>(A)	Top	15 V
<![if ! IE]> <![endif]>(A)		10 V
<![if ! IE]> <![endif]>Current		10 V
		8.0 V
	10	7.0 V
	10	6.0 V
<![if ! IE]> <![endif]>-to-Source		5.5 V
		5.0 V	4.5 V
	Bottom	4.5 V	4.5 V
	Bottom	4.5 V
	1
<![if ! IE]> <![endif]>, Drain
<![if ! IE]> <![endif]>D			20 µs Pulse Width
<![if ! IE]> <![endif]>I			20 µs Pulse Width
	0.1		TC = 150 °C
	0.1
	0.1	1	10	102

91065_02

VDS, Drain-to-Source Voltage (V)

	102
<![if ! IE]> <![endif]>Current (A)	10	TJ = 150 °C
<![if ! IE]> <![endif]>Source			TJ = 25 °C
<![if ! IE]> <![endif]>-to-	1
<![if ! IE]> <![endif]>, Drain				20 µs Pulse Width
<![if ! IE]> <![endif]>D
<![if ! IE]> <![endif]>I
	0.1			VDS = 50 V
	0.1
	4.0	5.0	6.0	7.0	8.0	9.0

91065_03

VGS, Gate-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics

<![if ! IE]> <![endif]>Resistance		3.0	ID = 8.0 A
		2.5	VGS = 10 V
		2.5

<![if ! IE]> <![endif]>, Drain-to-Source On	<![if ! IE]> <![endif]>(Normalized)	2.0
		1.5
		1.0
		0.5
<![if ! IE]> <![endif]>DS(on)		0.0
<![if ! IE]> <![endif]>R		0.0
<![if ! IE]> <![endif]>R		- 60 - 40 - 20 0		20	40	60 80 100 120 140 160
		- 60 - 40 - 20 0		20	40	60 80 100 120 140 160
91065_04			TJ, Junction Temperature (°C)

Fig. 2 - Typical Output Characteristics, TC = 150 °C

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91065	www.vishay.com
S11-0506-Rev. B, 21-Mar-11	3

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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