IRF840A, SiHF840A
Vishay Siliconix
Power MOSFET
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FEATURES |
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PRODUCT SUMMARY |
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• Low Gate Charge Qg Results in Simple Drive |
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VDS (V) |
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500 |
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Requirement |
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Available |
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RDS(on) ( ) |
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VGS = 10 V |
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0.85 |
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• Improved Gate, Avalanche and Dynamic dV/dt |
RoHS* |
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Qg (Max.) (nC) |
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38 |
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Ruggedness |
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COMPLIANT |
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Qgs (nC) |
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9.0 |
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• Fully Characterized Capacitance and Avalanche Voltage |
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Qgd (nC) |
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18 |
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and Current |
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Configuration |
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Single |
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• Effective Coss Specified |
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D |
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• Compliant to RoHS Directive 2002/95/EC |
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TO-220AB |
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APPLICATIONS |
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• Switch Mode Power Supply (SMPS) |
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G |
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• Uninterruptable Power Supply |
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• High Speed Power Switching |
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S |
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TYPICAL SMPS TOPOLOGIES |
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D |
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• Two Transistor Forward |
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G |
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S |
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N-Channel MOSFET |
• Half Bridge |
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• Full Bridge |
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ORDERING INFORMATION |
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Package |
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TO-220AB |
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Lead (Pb)-free |
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IRF840APbF |
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SiHF840A-E3 |
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SnPb |
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IRF840A |
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SiHF840A |
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ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) |
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PARAMETER |
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SYMBOL |
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LIMIT |
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UNIT |
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Drain-Source Voltage |
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VDS |
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500 |
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V |
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Gate-Source Voltage |
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VGS |
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± 30 |
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Continuous Drain Current |
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VGS at 10 V |
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TC = 25 °C |
ID |
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8.0 |
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TC = 100 °C |
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5.1 |
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A |
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Pulsed Drain Currenta |
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IDM |
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32 |
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Linear Derating Factor |
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1.0 |
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W/°C |
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Single Pulse Avalanche Energyb |
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EAS |
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510 |
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mJ |
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Repetitive Avalanche Currenta |
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IAR |
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8.0 |
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A |
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Repetitive Avalanche Energya |
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EAR |
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13 |
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mJ |
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Maximum Power Dissipation |
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TC = 25 °C |
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PD |
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125 |
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W |
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Peak Diode Recovery dV/dtc |
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dV/dt |
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5.0 |
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V/ns |
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Operating Junction and Storage Temperature Range |
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TJ, Tstg |
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- 55 to + 150 |
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°C |
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Soldering Recommendations (Peak Temperature) |
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for 10 s |
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300d |
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Mounting Torque |
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6-32 or M3 screw |
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10 |
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lbf · in |
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1.1 |
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N · m |
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Notes |
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a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). |
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b. VDD = 50 V, starting TJ = 25 °C, L = 16 mH, Rg = 25 , IAS = 8.0 A (see fig. 12). |
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c. ISD 8.0 A, dI/dt 100 A/μs, VDD VDS, TJ 150 °C. |
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d. 1.6 mm from case. |
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* Pb containing terminations are not RoHS compliant, exemptions may apply |
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Document Number: 91065 |
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www.vishay.com |
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S11-0506-Rev. B, 21-Mar-11 |
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1 |
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF840A, SiHF840A
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER |
SYMBOL |
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UNIT |
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Maximum Junction-to-Ambient |
RthJA |
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62 |
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Case-to-Sink, Flat, Greased Surface |
RthCS |
0.50 |
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°C/W |
Maximum Junction-to-Case (Drain) |
RthJC |
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1.0 |
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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER |
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SYMBOL |
TEST CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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Static |
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Drain-Source Breakdown Voltage |
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VDS |
VGS = 0 V, ID = 250 μA |
500 |
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V |
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VDS Temperature Coefficient |
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VDS/TJ |
Reference to 25 °C, ID = 1 mA |
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0.58 |
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V/°C |
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Gate-Source Threshold Voltage |
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VGS(th) |
VDS = VGS, ID = 250 μA |
2.0 |
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4.0 |
V |
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Gate-Source Leakage |
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IGSS |
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VGS = ± 30 V |
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± 100 |
nA |
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Zero Gate Voltage Drain Current |
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IDSS |
VDS = 500 V, VGS = 0 V |
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25 |
μA |
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VDS = 400 V, VGS = 0 V, TJ = 125 °C |
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250 |
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Drain-Source On-State Resistance |
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RDS(on) |
VGS = 10 V |
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ID = 4.8 Ab |
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0.85 |
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Forward Transconductance |
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gfs |
VDS = 50 V, ID = 4.8 Ab |
3.7 |
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S |
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Dynamic |
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Input Capacitance |
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Ciss |
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VGS = 0 V, |
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1018 |
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Output Capacitance |
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Coss |
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VDS = 25 V, |
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155 |
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f = 1.0 MHz, see fig. 5 |
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Reverse Transfer Capacitance |
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Crss |
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8.0 |
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pF |
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Output Capacitance |
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Coss |
VGS = 0 V; VDS = 1.0 V, f = 1.0 MHz |
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1490 |
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Output Capacitance |
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Coss |
VGS = 0 V; VDS = 400 V, f = 1.0 MHz |
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Effective Output Capacitance |
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Coss eff. |
VGS = 0 V; VDS = 0 V to 400 Vc |
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Total Gate Charge |
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Qg |
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ID = 8 A, VDS = 400 V, |
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38 |
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Gate-Source Charge |
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Qgs |
VGS = 10 V |
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9.0 |
nC |
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see fig. 6 and 13b |
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Gate-Drain Charge |
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Qgd |
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18 |
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Turn-On Delay Time |
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td(on) |
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11 |
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Rise Time |
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tr |
VDD = 250 V, ID = 8 A |
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23 |
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ns |
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Turn-Off Delay Time |
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td(off) |
Rg = 9.1 , RD = 31 , see fig. 10b |
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26 |
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Fall Time |
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tf |
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19 |
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Drain-Source Body Diode Characteristics |
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Continuous Source-Drain Diode Current |
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IS |
MOSFET symbol |
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D |
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8.0 |
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showing the |
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A |
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integral reverse |
G |
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Pulsed Diode Forward Currenta |
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I |
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p - n junction diode |
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SM |
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Body Diode Voltage |
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VSD |
TJ = 25 °C, IS = 8 A, VGS = 0 Vb |
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2.0 |
V |
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Body Diode Reverse Recovery Time |
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trr |
TJ = 25 °C, IF = 8 A, dI/dt = 100 A/μsb |
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422 |
633 |
ns |
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Body Diode Reverse Recovery Charge |
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Qrr |
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2.16 |
3.24 |
μC |
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Forward Turn-On Time |
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ton |
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) |
Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.Pulse width 300 μs; duty cycle 2 %.
c.Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.
www.vishay.com |
Document Number: 91065 |
2 |
S11-0506-Rev. B, 21-Mar-11 |
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF840A, SiHF840A
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
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102 |
VGS |
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Top |
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<![if ! IE]> <![endif]>(A) |
15 V |
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10 V |
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<![if ! IE]> <![endif]>Current |
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8.0 V |
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10 |
7.0 V |
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6.0 V |
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<![if ! IE]> <![endif]>-to-Source |
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5.5 V |
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5.0 V |
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Bottom |
4.5 V |
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1 |
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4.5 V |
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<![if ! IE]> <![endif]>, Drain |
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<![if ! IE]> <![endif]>D |
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20 µs Pulse Width |
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<![if ! IE]> <![endif]>I |
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0.1 |
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TC = 25 °C |
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0.1 |
1 |
10 |
102 |
91065_01 |
VDS, Drain-to-Source Voltage (V) |
Fig. 1 - Typical Output Characteristics, TC = 25 °C
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102 |
VGS |
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Top |
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<![if ! IE]> <![endif]>(A) |
15 V |
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10 V |
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<![if ! IE]> <![endif]>Current |
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8.0 V |
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10 |
7.0 V |
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6.0 V |
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<![if ! IE]> <![endif]>-to-Source |
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5.5 V |
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5.0 V |
4.5 V |
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Bottom |
4.5 V |
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1 |
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<![if ! IE]> <![endif]>, Drain |
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<![if ! IE]> <![endif]>D |
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20 µs Pulse Width |
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<![if ! IE]> <![endif]>I |
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0.1 |
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TC = 150 °C |
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0.1 |
1 |
10 |
102 |
91065_02 |
VDS, Drain-to-Source Voltage (V) |
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102 |
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<![if ! IE]> <![endif]>Current (A) |
10 |
TJ = 150 °C |
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<![if ! IE]> <![endif]>Source |
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TJ = 25 °C |
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<![if ! IE]> <![endif]>-to- |
1 |
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<![if ! IE]> <![endif]>, Drain |
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20 µs Pulse Width |
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<![if ! IE]> <![endif]>D |
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<![if ! IE]> <![endif]>I |
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0.1 |
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VDS = 50 V |
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4.0 |
5.0 |
6.0 |
7.0 |
8.0 |
9.0 |
91065_03 |
VGS, Gate-to-Source Voltage (V) |
Fig. 3 - Typical Transfer Characteristics
<![if ! IE]> <![endif]>Resistance |
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3.0 |
ID = 8.0 A |
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2.5 |
VGS = 10 V |
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<![if ! IE]> <![endif]>, Drain-to-Source On |
<![if ! IE]> <![endif]>(Normalized) |
2.0 |
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1.5 |
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1.0 |
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0.5 |
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<![if ! IE]> <![endif]>DS(on) |
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0.0 |
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<![if ! IE]> <![endif]>R |
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- 60 - 40 - 20 0 |
20 |
40 |
60 80 100 120 140 160 |
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91065_04 |
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TJ, Junction Temperature (°C) |
Fig. 2 - Typical Output Characteristics, TC = 150 °C |
Fig. 4 - Normalized On-Resistance vs. Temperature |
Document Number: 91065 |
www.vishay.com |
S11-0506-Rev. B, 21-Mar-11 |
3 |
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000