N-Channel MOSFET
G
D
S
TO-220AB
G
D
S
Available
RoHS*
COMPLIANT
Power MOSFET
IRF840A, SiHF840A
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 500
R
()V
DS(on)
Q
(Max.) (nC) 38
g
Q
(nC) 9.0
gs
Q
(nC) 18
gd
Configuration Single
= 10 V 0.85
GS
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Effective C
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptable Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Two Transistor Forward
•Half Bridge
• Full Bridge
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free
SnPb
IRF840APbF
SiHF840A-E3
IRF840A
SiHF840A
Specified
oss
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
= 100 °C 5.1
C
DS
± 30
GS
I
D
IDM 32
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
b
a
a
= 25 °C P
c
C
Operating Junction and Storage Temperature Range T
E
AS
I
AR
E
AR
D
dV/dt 5.0 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Mounting Torque 6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 50 V, starting TJ = 25 °C, L = 16 mH, Rg = 25 , IAS = 8.0 A (see fig. 12).
DD
c. I
8.0 A, dI/dt 100 A/μs, VDD VDS, TJ 150 °C.
SD
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91065 www.vishay.com
S11-0506-Rev. B, 21-Mar-11 1
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
500
8.0
510 mJ
8.0 A
13 mJ
125 W
- 55 to + 150
d
10 lbf · in
1.1 N · m
www.vishay.com/doc?91000
V
AT
°C
IRF840A, SiHF840A
S
D
G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Case (Drain) R
thJA
thCS
thJC
-62
0.50 -
-1.0
°C/WCase-to-Sink, Flat, Greased Surface R
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.58 -
V
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
DS
GS(th)
V
GSS
DSS
V
DS(on)
fs
Dynamic
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Output Capacitance C
Output Capacitance C
Effective Output Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
iss
- 155 -
oss
-8.0-
rss
V
oss
V
oss
eff. VGS = 0 V; VDS = 0 V to 400 V
oss
g
--9.0
gs
--18
gd
d(on)
r
-26-
d(off)
-19-
f
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
I
SM
SD
rr
rr
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. C
eff. is a fixed capacitance that gives the same charging time as C
oss
VGS = 0 V, ID = 250 μA 500 - -
VDS = VGS, ID = 250 μA 2.0 - 4.0 V
= ± 30 V - - ± 100 nA
GS
VDS = 500 V, VGS = 0 V - - 25
V
= 400 V, VGS = 0 V, TJ = 125 °C - - 250
DS
= 10 V ID = 4.8 A
GS
VDS = 50 V, ID = 4.8 A
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
= 0 V; VDS = 1.0 V, f = 1.0 MHz 1490
GS
= 0 V; VDS = 400 V, f = 1.0 MHz 42
GS
b
b
--0.85
3.7 - - S
- 1018 -
c
56
--38
= 8 A, VDS = 400 V,
I
V
GS
= 10 V
D
see fig. 6 and 13
b
-11-
V
= 250 V, ID = 8 A
DD
R
= 9.1 , RD = 31, see fig. 10
g
b
-23-
--8.0
--32
TJ = 25 °C, IS = 8 A, VGS = 0 V
TJ = 25 °C, IF = 8 A, dI/dt = 100 A/μs
b
--2.0V
- 422 633 ns
b
- 2.16 3.24 μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
while VDS is rising from 0 % to 80 % VDS.
oss
V
V/°C
μA
pF
nC Gate-Source Charge Q
ns
A
www.vishay.com Document Number: 91065
2 S11-0506-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
10
2
10
1
0.1
10
2
10
1
0.1
91065_02
Bottom
To p
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
20 µs Pulse Width
T
C
= 150 °C
4.5 V
VDS, Drain-to-Source Voltage (V)
I
D
, Drain-to-Source Current (A)
10
2
10
1
0.1
91065_03
TJ = 25 °C
20 µs Pulse Width
V
DS
= 50 V
I
D
, Drain-to-Source Current (A)
V
GS
,
Gate-to-Source Voltage (V)
4.0 5.0
6.0 7.0 8.0 9.0
TJ = 150 °C
91065_04
I
D
= 8.0 A
V
GS
= 10 V
3.0
0.0
0.5
1.0
1.5
2.0
2.5
- 60 - 40 - 20 0 20
40 60
80 100 120 140 160
T
J
,
Junction Temperature (°C)
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
IRF840A, SiHF840A
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2
10
To p
10
Bottom
1
, Drain-to-Source Current (A)
D
I
0.1
0.1
91065_01
Fig. 1 - Typical Output Characteristics, TC = 25 °C
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
4.5 V
20 µs Pulse Width
= 25 °C
T
C
1
10
VDS, Drain-to-Source Voltage (V)
2
10
Vishay Siliconix
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, T
Document Number: 91065 www.vishay.com
S11-0506-Rev. B, 21-Mar-11 3
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
= 150 °C
C
Fig. 4 - Normalized On-Resistance vs. Temperature
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
IRF840A, SiHF840A
1
1
10
2
10
3
10
2
91065_05
Capacitance (pF)
V
DS
,
Drain-to-Source Voltage (V)
C
iss
C
rss
C
oss
V
GS
= 0 V, f = 1 MHz
C
iss
= Cgs + Cgd, Cds Shorted
C
rss
= C
gd
C
oss
= Cds + C
gd
10
10
10
5
10
4
10
3
91065_06
QG, Total Gate Charge (nC)
V
GS
, Gate-to-Source Voltage (V)
20
16
12
8
0
4
0
10
40
30
20
ID = 8.0 A
V
DS
= 100 V
V
DS
= 250 V
For test circuit
see figure 13
V
DS
= 400 V
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
2
10
10
TJ = 150 °C
TJ = 25 °C
1
, Reverse Drain Current (A)
SD
I
91065_07
0.1
0.2
0.5 0.8
VSD, Source-to-Drain Voltage (V)
1.1
V
GS
Fig. 7 - Typical Source-Drain Diode Forward Voltage
= 0 V
1.4
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
2
10
10
1
, Drain Current (A)
D
I
0.1
10
91065_08
Operation in this area limited
by R
DS(on)
10 µs
100 µs
1 ms
10 ms
TC = 25 °C
= 150 °C
T
J
Single Pulse
2
10
3
10
VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
4
10
www.vishay.com Document Number: 91065
4 S11-0506-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
91065_09
I
D
, Drain Current (A)
TC, Case Temperature (°C)
0.0
2.0
4.0
8.0
6.0
25 1501251007550
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
0.1 1
91065_11
Thermal Response (Z
thJC
)
t1, Rectangular Pulse Duration (s)
10
1
0.1
10
-2
10
-4
10
-3
10
-2
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
DM
t
1
t
2
Notes:
1. Duty Factor, D = t
1/t2
2. Peak Tj = PDM x Z
thJC
+ T
C
Single Pulse
(Thermal Response)
10
-5
IRF840A, SiHF840A
Fig. 9 - Maximum Drain Current vs. Case Temperature
V
DS
V
GS
R
G
Vishay Siliconix
R
D
D.U.T.
+
V
-
DD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91065 www.vishay.com
S11-0506-Rev. B, 21-Mar-11 5
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
IRF840A, SiHF840A
R
G
I
AS
0.01 Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
10 V
Var y tp to obtain
required I
AS
I
AS
V
DS
V
DD
V
DS
t
p
91065_12d
580
520
540
560
0.0 5.0
4.0
3.02.0
1.0
I
AV
, Avalanche Current (A)
V
DSav
, Avalanche Voltage (V)
600
8.0
7.0
6.0
D.U.T.
3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
Vishay Siliconix
Fig. 12a - Unclamped Inductive Test Circuit
Q
10 V
Q
GS
V
G
Fig. 12d - Basic Gate Charge Waveform
G
Q
GD
Charge
, Single Pulse Avalanche Energy (mJ)
AS
E
91065_12c
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 12b - Unclamped Inductive Waveforms
1200
1000
800
600
400
200
0
25 150
50
Starting T
, Junction Temperature (°C)
J
To p
Bottom
10075
125
I
D
3.6 A
5.1 A
8.0 A
Fig. 13a - Typical Drain-to-Source Voltage vs.
Avalanche Current
www.vishay.com Document Number: 91065
6 S11-0506-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 13b - Gate Charge Test Circuit
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
IRF840A, SiHF840A
+
-
R
D.U.T.
g
Peak Diode Recovery dV/dt Test Circuit
+
-
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-
• dV/dt controlled by R
• Driver same type as D.U.T.
I
controlled by duty factor “D”
•
SD
• D.U.T. - device under test
g
+
Vishay Siliconix
+
V
DD
-
Reverse
recovery
current
Re-applied
voltage
Driver gate drive
P.W.
D.U.T. l
D.U.T. V
Inductor current
Note
a. V
waveform
SD
waveform
DS
Body diode forward drop
Ripple ≤ 5 %
= 5 V for logic level devices
GS
Period
Body diode forward
current
dI/dt
Diode recovery
dV/dt
Fig. 14 - For N-Channel
D =
Period
P.W.
V
GS
V
DD
I
SD
= 10 Va
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91065
.
Document Number: 91065 www.vishay.com
S11-0506-Rev. B, 21-Mar-11 7
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
www.vishay.com
M
*
3
2
1
L
L(1)
D
H(1)
Q
Ø P
A
F
J(1)
b(1)
e(1)
e
E
b
C
Package Information
Vishay Siliconix
TO-220-1
DIM.
A 4.24 4.65 0.167 0.183
b 0.69 1.02 0.027 0.040
b(1) 1.14 1.78 0.045 0.070
c 0.36 0.61 0.014 0.024
D 14.33 15.85 0.564 0.624
E 9.96 10.52 0.392 0.414
e 2.41 2.67 0.095 0.105
e(1) 4.88 5.28 0.192 0.208
F 1.14 1.40 0.045 0.055
H(1) 6.10 6.71 0.240 0.264
J(1) 2.41 2.92 0.095 0.115
L 13.36 14.40 0.526 0.567
L(1) 3.33 4.04 0.131 0.159
Ø P 3.53 3.94 0.139 0.155
Q 2.54 3.00 0.100 0.118
ECN: X15-0364-Rev. C, 14-Dec-15
DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
MILLIMETERS INCHES
MIN. MAX. MIN. MAX.
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revison: 14-Dec-15
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ASE Xi’an
For technical questions, contact: hvm@vishay.com
Package Picture
1
Document Number: 66542
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Disclaimer
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Revision: 13-Jun-16
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Document Number: 91000
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