Vishay IRF840, SiHF840 Data Sheet

IRF840, SiHF840

www.vishay.com	Vishay Siliconix
	Power MOSFET

PRODUCT SUMMARY

VDS (V)

500

RDS(on) ( )

VGS = 10 V

0.85

Qg max. (nC)

63

Qgs (nC)

9.3

Qgd (nC)

32

Configuration

Single

D

TO-220AB

G

S

D

S

G

N-Channel MOSFET

FEATURES

• Dynamic dV/dt rating

Available

• Repetitive avalanche rated

• Fast switching

Available

•Ease of paralleling

•Simple drive requirements

•Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note

*This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details.

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

ORDERING INFORMATION

	Package	TO-220AB
	Lead (Pb)-free	IRF840PbF
		SiHF840-E3
	SnPb	IRF840
		SiHF840

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER				SYMBOL	LIMIT	UNIT
Drain-Source Voltage				VDS	500	V
Gate-Source Voltage				VGS	± 20	V
Continuous Drain Current		VGS at 10 V	TC = 25 °C	ID	8.0
			TC = 100 °C		5.1	A
Pulsed Drain Current a				IDM	32
Linear Derating Factor					1.0	W/°C
Single Pulse Avalanche Energy b				EAS	510	mJ
Repetitive Avalanche Current a				IAR	8.0	A
Repetitive Avalanche Energy a				EAR	13	mJ
Maximum Power Dissipation		TC = 25 °C		PD	125	W
Peak Diode Recovery dV/dt c				dV/dt	3.5	V/ns
Operating Junction and Storage Temperature Range				TJ, Tstg	-55 to +150	°C
Soldering Recommendations (Peak temperature) d		for 10 s			300
Mounting Torque		6-32 or M3 screw			10	lbf · in
					1.1	N · m

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.VDD = 50 V, starting TJ = 25 °C, L = 14 mH, Rg = 25 , IAS = 8.0 A (see fig. 12).

c.ISD 8.0 A, dI/dt 100 A/μs, VDD VDS, TJ 150 °C.

d.1.6 mm from case.

S16-0754-Rev. D, 02-May-16	1	Document Number: 91070
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

						IRF840, SiHF840
		www.vishay.com				Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER			SYMBOL	TYP.	MAX.		UNIT
Maximum Junction-to-Ambient			RthJA	-	62
Case-to-Sink, Flat, Greased Surface			RthCS	0.50	-		°C/W
Maximum Junction-to-Case (Drain)			RthJC	-	1.0

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER		SYMBOL	TEST CONDITIONS									MIN.	TYP.	MAX.	UNIT
Static
Drain-Source Breakdown Voltage		VDS	VGS = 0 V, ID = 250 μA									500	-	-	V
VDS Temperature Coefficient		VDS/TJ	Reference to 25 °C, ID = 1 mA									-	0.78	-	V/°C
Gate-Source Threshold Voltage		VGS(th)	VDS = VGS, ID = 250 μA									2.0	-	4.0	V
Gate-Source Leakage		IGSS	VGS = ± 20 V									-	-	± 100	nA
Zero Gate Voltage Drain Current		IDSS	VDS = 500 V, VGS = 0 V									-	-	25	μA
			VDS = 400 V, VGS = 0 V, TJ = 125 °C									-	-	250
Drain-Source On-State Resistance		RDS(on)	VGS = 10 V		ID = 4.8 A b							-	-	0.85
Forward Transconductance		gfs	VDS = 50 V, ID = 4.8 A b									4.9	-	-	S
Dynamic
Input Capacitance		Ciss	VGS = 0 V,									-	1300	-
Output Capacitance		Coss	VDS = 25 V,									-	310	-	pF
Reverse Transfer Capacitance		Crss	f = 1.0 MHz, see fig. 5									-	120	-
Total Gate Charge		Qg			ID = 8 A, VDS = 400 V,							-	-	63
Gate-Source Charge		Qgs	VGS = 10 V									-	-	9.3	nC
					see fig. 6 and 13 b
Gate-Drain Charge		Qgd										-	-	32
Turn-On Delay Time		td(on)										-	14	-
Rise Time		tr	VDD = 250 V, ID = 8 A									-	23	-	ns
Turn-Off Delay Time		td(off)	Rg = 9.1 , RD = 31 , see fig. 10 b									-	49	-
Fall Time		tf										-	20	-
Internal Drain Inductance		LD	Between lead,							D		-	4.5	-
			6 mm (0.25") from
Internal Source Inductance		LS	package and center of			G						-	7.5	-	nH
			die contact
										S
Gate Input Resistance		Rg	f = 1 MHz, open drain									0.6	-	2.8
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current		IS	MOSFET symbol								D	-	-	8.0
			showing the												A
			integral reverse			G
Pulsed Diode Forward Current a		ISM										-	-	32
			p - n junction diode								S
Body Diode Voltage		VSD	TJ = 25 °C, IS = 8 A, VGS = 0 V b									-	-	2.0	V
Body Diode Reverse Recovery Time		trr	TJ = 25 °C, IF = 8 A, dI/dt = 100 A/μs b									-	460	970	ns
Body Diode Reverse Recovery Charge		Qrr										-	4.2	8.9	μC
Forward Turn-On Time		ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width 300 μs; duty cycle 2 %.

S16-0754-Rev. D, 02-May-16	2	Document Number: 91070
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF840, SiHF840

www.vishay.com	Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

<![if ! IE]>

<![endif]>ID, Drain Current (A)

91070_01

	Top	VGS
		15 V
		10 V
		8.0 V
	101	7.0 V
		6.0 V
		5.5 V
		5.0 V
	Bottom	4.5 V

4.5 V

100 20 µs Pulse Width TC = 25 °C

100

101

VDS, Drain-to-Source Voltage (V)

<![if ! IE]> <![endif]>Resistance	3.0
		ID = 8.0 A
<![if ! IE]> <![endif]>Source-to-Drain, On (Normalized)	2.5	VGS = 10 V
	2.0
	0.5
	1.5
<![if ! IE]> <![endif]>DS(on)	1.0
	0.0
<![if ! IE]> <![endif]>R
	- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91070_04				TJ, Junction Temperature (°C)

Fig. 1 - Typical Output Characteristics, TC = 25 °C					Fig. 4 - Normalized On-Resistance vs. Temperature
			VGS			2500	VGS = 0 V, f = 1 MHz
		Top
			15 V				Ciss = Cgs + Cgd, Cds Shorted
	10	1	10 V
						2000	Crss = Cgd
			8.0 V
<![if ! IE]> <![endif]>Current(A)							Coss = Cds + Cgd
			7.0 V		<![if ! IE]> <![endif]>(pF)
			6.0 V			1500	Ciss
<![if ! IE]> <![endif]>I			5.5 V	4.5 V	<![if ! IE]> <![endif]>Capacitance
			5.0 V					oss
<![if ! IE]> <![endif]>Drain,		Bottom	4.5 V			1000
<![if ! IE]> <![endif]>D							C
	100					500	Crss
				20 µs Pulse Width
				TC = 150 °C
		100		101		0
						100	101

91070_02	VDS, Drain-to-Source Voltage (V)	91070_05	VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 150 °C		Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

<![if ! IE]>

<![endif]>ID, Drain Current (A)

								20	ID = 8.0 A
							<![if ! IE]> <![endif]>(V)
	150 °C										VDS = 400 V
101							<![if ! IE]> <![endif]>Voltage	16
										VDS = 250 V
	25 °C						<![if ! IE]> <![endif]>to-Source	12		VDS = 100 V
								8
100							<![if ! IE]> <![endif]>-
							<![if ! IE]> <![endif]>, Gate
								4
				20 µs Pulse Width			<![if ! IE]> <![endif]>GS					For test circuit
				VDS = 50 V			<![if ! IE]> <![endif]>V
								0				see figure 13
4	5	6	7	8	9	10
								0	15	30	45	60	75

91070_03	VGS, Gate-to-Source Voltage (V)		91070_06	QG, Total Gate Charge (nC)
	Fig. 3 - Typical Transfer Characteristics		Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage
S16-0754-Rev. D, 02-May-16		3		Document Number: 91070
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000