Vishay IRF830S, SiHF830S, IRF830L, SiHF830L Data Sheet
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N-Channel MOSFET
G
D
S
D2PAK (TO-263)
G
D
S
I2PAK (TO-262)
G
D
S
Available
Available
IRF830S, SiHF830S, IRF830L, SiHF830L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) 500
R
()V
DS(on)
Q
max. (nC) 38
g
Q
(nC) 5.0
gs
Q
(nC) 22
gd
Configuration Single
= 10 V 1.5
GS
FEATURES
• Surface mount
• Available in tape and reel
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
*
Thi s datasheet pro vi des information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK (TO-263) is a surface mount power package
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
ORDERING INFORMATION
Package D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262)
Lead (Pb)-free and halogen-free SiHF830S-GE3 SiHF830STRL-GE3
Lead (Pb)-free IRF830SPbF IRF830STRLPbF
Note
a. See device orientation.
a
SiHF830L-GE3
a
IRF830LPbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
= 100 °C 2.9
C
DS
± 20
GS
I
D
IDM 18
Linear Derating Factor 0.59
Linear Derating Factor (PCB mount)
Single Pulse Avalanche Energy
Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipation T
Maximum Power Dissipation (PCB mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak temperature)
e
b
a
= 25 °C
e
c
d
C
TA = 25 °C 3.1
for 10 s 300
E
AS
I
AR
E
AR
P
D
dV/dt 3.5 V/ns
, T
J
stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 50 V, starting TJ = 25 °C, L = 24 mH, Rg = 25 , IAS = 4.5 A (see fig. 12).
DD
c. I
4.5 A, dI/dt 75 A/μs, VDD VDS, TJ 150 °C.
SD
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
S16-0754-Rev. E, 02-May-16
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: hvm@vishay.com
1
500
4.5
0.025
280 mJ
4.5 A
7.4 mJ
74
-55 to +150
Document Number: 91064
V
AT
W/°C
W
°C
IRF830S, SiHF830S, IRF830L, SiHF830L
D
S
G
S
D
G
www.vishay.com
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Ambient
(PCB mount)
a
Maximum Junction-to-Case (Drain) R
thJA
R
thJA
thJC
-62
-40
-1.7
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.61 - V/°C
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
DS
GS(th)
V
GSS
DSS
VGS = 10 V ID = 2.7 A
DS(on)
fs
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
Gate Input Resistance R
iss
- 160 -
oss
-68-
rss
g
--5.0
gs
--22
gd
d(on)
r
-42-
d(off)
-16-
f
D
V
Between lead,
6 mm (0.25") from
package and center of
S
g
die contact
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
I
SM
SD
rr
rr
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IF = 3.1 A, dI/dt = 100 A/μs
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
VGS = 0, ID = 250 μA 500 - - V
VDS = VGS, ID = 250 μA 2.0 - 4.0 V
= ± 20 V - - ± 100 nA
GS
VDS = 500 V, VGS = 0 V - - 25
= 400 V, VGS = 0 V, TJ = 125 °C - - 250
V
DS
VDS = 50 V, ID = 2.7 A
b
b
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
= 3.1 A, VDS = 400 V,
I
= 10 V
GS
V
R
= 12 , RD = 79 , see fig. 10
g
D
see fig. 6 and 13
= 250 V, ID = 3.1 A,
DD
b
b
f = 1 MHz, open drain 0.5 - 2.7
TJ = 25 °C, IS = 4.5 A, VGS = 0 V
b
b
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Vishay Siliconix
°C/W
--1.5
2.5 - - S
- 610 -
--38
-8.2-
-16-
-4.5-
-7.5-
--4.5
--18
--1.6V
- 320 640 ns
-1.02.0μC
μA
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
A
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: hvm@vishay.com
S16-0754-Rev. E, 02-May-16
2
Document Number: 91064
IRF830S, SiHF830S, IRF830L, SiHF830L
I
D
= 3.1 A
V
GS
= 10 V
3.0
0.0
0.5
1.0
1.5
2.0
2.5
T
J
,
Junction Temperature (°C)
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
91064_04
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
1500
1250
1000
750
0
250
500
10
0
10
1
Capacitance (pF)
V
DS
,
Drain-to-Source Voltage (V)
C
iss
C
rss
C
oss
V
GS
= 0 V, f = 1 MHz
C
iss
= Cgs + Cgd, Cds Shorted
C
rss
= C
gd
C
oss
= Cds + C
gd
91064_05
91064_06
QG, Total Gate Charge (nC)
V
GS
, Gate-to-Source Voltage (V)
20
16
12
8
0
4
0
8
40
3224
16
ID = 3.1 A
V
DS
= 100 V
V
DS
= 250 V
For test circuit
see figure 13
V
DS
= 400 V
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
V
1
10
To p
0
Bottom
10
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
Vishay Siliconix
, Drain Current (A)
D
I
20 µs Pulse Width
= 25 °C
T
C
1
10
91064_01
-1
10
0
10
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
V
1
10
0
10
, Drain Current (A)
D
I
-1
10
91064_02
To p
Bottom
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
0
10
V
Drain-to-Source Voltage (V)
,
DS
20 µs Pulse Width
= 150 °C
T
C
1
10
4.5 V
Fig. 4 - Normalized On-Resistance vs. Temperature
4.5 V
Fig. 2 - Typical Output Characteristics, T
, Drain Current (A)
D
I
91064_03
S16-0754-Rev. E, 02-May-16
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
= 150 °C
C
1
10
150 °C
10
10
0
-1
4
25 °C
567
V
Gate-to-Source Voltage (V)
,
GS
20 µs Pulse Width
= 50 V
V
DS
8
Fig. 3 - Typical Transfer Characteristics
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: hvm@vishay.com
910
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
3
Document Number: 91064
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