Vishay IRF830B Data Sheet

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TO-220AB

IRF830B

Vishay Siliconix

D Series Power MOSFET

PRODUCT SUMMARY

VDS (V) at TJ max. 550

max. () at 25 °C VGS = 10 V 1.5

DS(on)

max. (nC) 20

(nC) 3

(nC) 5

Configuration Single

N-Channel MOSFET

FEATURES

• Optimal design

- Low area specific on-resistance

- Low input capacitance (C

iss

)

- Reduced capacitive switching losses

- High body diode ruggedness

- Avalanche energy rated (UIS)

• Optimal efficiency and operation

- Low cost

- Simple gate drive circuitry

- Low figure-of-merit (FOM): R

- Fast switching

x Q

• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

APPLICATIONS

• Consumer electronics

- Displays (LCD or plasma TV)

• Server and telecom power supplies

- SMPS

• Industrial

- Welding

- Induction heating

- Motor drives

• Battery chargers

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free IRF830BPbF

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage AC (f > 1 Hz) 30

= 25 °C

Continuous Drain Current (T

Pulsed Drain Current

Linear Derating Factor 0.83 W/°C

Single Pulse Avalanche Energy

Maximum Power Dissipation P

Operating Junction and Storage Temperature Range T

Drain-Source Voltage Slope T

Reverse Diode dV/dt

Soldering Recommendations (Peak temperature)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

= 50 V, starting TJ = 25 °C, L = 2.3 mH, Rg = 25 , IAS = 5 A.

b. V

c. 1.6 mm from case. d. I

 ID, starting TJ = 25 °C.

= 150 °C) VGS at 10 V

= 100 °C 3.4

= 125 °C

for 10 s 300 °C

IDM 10

, T

stg

dV/dt

500

± 30

5.3

28.8 mJ

104 W

-55 to +150 °C

0.28

V Gate-Source Voltage

V/ns

S16-0109-Rev. B, 25-Jan-16

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Document Number: 91520

IRF830B

www.vishay.com

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thJC

-62

-1.2

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 250 μA - 0.58 - V/°C

Gate-Source Threshold Voltage (N) V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance

GS(th)

GSS

DSS

VGS = 10 V ID = 2.5 A - 1.2 1.5 

DS(on)

Dynamic

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Effective Output Capacitance, Energy

Effective Output Capacitance, Time

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Gate Input Resistance R

iss

-34-

oss

-6-

rss

o(er)

o(tr)

-5-

d(on)

-1428

d(off)

-1122

f = 1 MHz, open drain - 1.7 - 

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current I

Diode Forward Voltage V

Reverse Recovery Time t

Reverse Recovery Charge Q

Reverse Recovery Current I

RRM

MOSFET symbol showing the 

integral reverse P - N junction diode

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature. b. C c. C

is a fixed capacitance that gives the same energy as C

oss(er)

is a fixed capacitance that gives the same charging time as C

oss(tr)

VGS = 0 V, ID = 250 μA 500 - - V

VDS = VGS, ID = 250 μA 3 - 5 V

= ± 30 V - - ± 100 nA

VDS = 500 V, VGS = 0 V - - 1

= 400 V, VGS = 0 V, TJ = 125 °C - - 10

VDS = 20 V, ID = 2.5 A - 1.8 - S

VGS = 0 V,

= 100 V,

f = 1 MHz

= 0 V to 400 V, VGS = 0 V

= 10 V ID = 2.5 A, VDS = 400 V

= 400 V, ID = 2.5 A

= 9.1 , V

= 10 V

TJ = 25 °C, IS = 4 A, VGS = 0 V - - 1.2 V

TJ = 25 °C, IF = IS = 2.5 A,

dI/dt = 100 A/μs, V

while VDS is rising from 0 % to 80 % V

oss

while V

oss

= 20 V

is rising from 0 % to 80 % V

Vishay Siliconix

°C/W

- 325 -

-31-

-41-

-1020

-1224

-1122

--5

--20

- 320 - ns

-1.2-μC

-8-A

DSS

μA

nC Gate-Source Charge Qgs -3-

S16-0109-Rev. B, 25-Jan-16

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: hvm@vishay.com

Document Number: 91520

www.vishay.com

VDS, Drain-to-Source Voltage (V)

, Drain-to-Source Current (A)

TJ = 25 °C

TOP 15 V

14 V 13 V 12 V 11 V 10 V 9 V

6 V

7 V

8 V

0 5 10 15 20 25 30

VDS, Drain-to-Source Voltage (V)

, Drain-to-Source Current (A)

01020

= 150 °C

5152530

TOP 15 V

14 V 13 V 12 V 11 V 10 V

9.0 V

8.0 V

7.0 V

6.0 V

5.0 V

VGS, Gate-to-Source Voltage (V)

, Drain-to-Source Current (A)

010 2551520

TJ = 150 °C

TJ = 25 °C

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

IRF830B

Vishay Siliconix

ID = 2.5 A

2.5

1.5

Fig. 1 - Typical Output Characteristics

, Drain-to-Source

DS(on)

0.5

On Resistance (Normalized)

- 40 - 20020 40 60 80 100 120

- 60

= 10 V

140

160

TJ, Junction Temperature (°C)

Fig. 4 - Normalized On-Resistance vs. Temperature

1000

iss

= 0 V, f = 1 MHz

= Cgs + Cgd, Cds Shorted

100

Capacitance (pF)

0 100 200 300 400 500

iss

= C

rss

= Cds + C

oss

rss

VDS, Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics

S16-0109-Rev. B, 25-Jan-16

Fig. 3 - Typical Transfer Characteristics

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

, Gate-to-Source Voltage (V)

0 3 6 9 12 15 18

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

For technical questions, contact: hvm@vishay.com

VDS = 400 V

= 250 V

= 100 V

Qg, Total Gate Charge (nC)

Document Number: 91520

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