Vishay IRF830, SiHF830 Data Sheet

IRF830, SiHF830

www.vishay.com	Vishay Siliconix
	Power MOSFET

PRODUCT SUMMARY

VDS (V)		500
RDS(on) ( )	VGS = 10 V		1.5
Qg max. (nC)		38
Qgs (nC)		5.0
Qgd (nC)		22
Configuration		Single

D

TO-220AB

G

S

D S

G

N-Channel MOSFET

FEATURES

• Dynamic dV/dt rating

• Repetitive avalanche rated	Available
• Fast switching	Available

•Ease of paralleling

•Simple drive requirements

•Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note

*This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details.

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

ORDERING INFORMATION

	Package	TO-220AB
	Lead (Pb)-free	IRF830PbF
		SiHF830-E3
	SnPb	IRF830
		SiHF830

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER				SYMBOL	LIMIT	UNIT
Drain-Source Voltage				VDS	500	V
Gate-Source Voltage				VGS	± 20
Continuous Drain Current		VGS at 10 V	TC = 25 °C	ID	4.5
			TC = 100 °C		2.9	A
Pulsed Drain Current a				IDM	18
Linear Derating Factor					0.59	W/°C
Single Pulse Avalanche Energy b				EAS	280	mJ
Repetitive Avalanche Current a				IAR	4.5	A
Repetitive Avalanche Energy a				EAR	7.4	mJ
Maximum Power Dissipation		TC = 25 °C		PD	74	W
Peak Diode Recovery dV/dt c				dV/dt	3.5	V/ns
Operating Junction and Storage Temperature Range				TJ, Tstg	-55 to +150	°C
Soldering Recommendations (Peak temperature) d		for 10 s			300
Mounting Torque		6-32 or M3 screw			10	lbf · in
					1.1	N · m

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.VDD = 50 V, starting TJ = 25 °C, L = 24 mH, Rg = 25 , IAS = 4.5 A (see fig. 12).

c.ISD 4.5 A, dI/dt 75 A/μs, VDD VDS, TJ 150 °C.

d.1.6 mm from case.

S16-0754-Rev. C, 02-May-16	1	Document Number: 91063
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

						IRF830, SiHF830
		www.vishay.com				Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER			SYMBOL	TYP.	MAX.		UNIT
Maximum Junction-to-Ambient			RthJA	-	62
Case-to-Sink, Flat, Greased Surface			RthCS	0.50	-		°C/W
Maximum Junction-to-Case (Drain)			RthJC	-	1.7

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER		SYMBOL	TEST CONDITIONS												MIN.	TYP.	MAX.	UNIT
Static
Drain-Source Breakdown Voltage		VDS	VGS = 0 V, ID = 250 μA												500	-	-	V
VDS Temperature Coefficient		VDS/TJ	Reference to 25 °C, ID = 1 mA												-	0.61	-	V/°C
Gate-Source Threshold Voltage		VGS(th)	VDS = VGS, ID = 250 μA												2.0	-	4.0	V
Gate-Source Leakage		IGSS		VGS = ± 20 V											-	-	± 100	nA
Zero Gate Voltage Drain Current		IDSS	VDS = 500 V, VGS = 0 V												-	-	25	μA
			VDS = 400 V, VGS = 0 V, TJ = 125 °C												-	-	250
Drain-Source On-State Resistance		RDS(on)	VGS = 10 V			ID = 2.7 A b									-	-	1.5
Forward Transconductance		gfs	VDS = 50 V, ID = 2.7 A b												2.5	-	-	S
Dynamic
Input Capacitance		Ciss		VGS = 0 V,											-	610	-
Output Capacitance		Coss		VDS = 25 V,											-	160	-	pF
Reverse Transfer Capacitance		Crss	f = 1.0 MHz, see fig. 5												-	68	-
Total Gate Charge		Qg			ID = 3.1 A, VDS = 400 V,										-	-	38
Gate-Source Charge		Qgs	VGS = 10 V												-	-	5.0	nC
						see fig. 6 and 13 b
Gate-Drain Charge		Qgd													-	-	22
Turn-On Delay Time		td(on)													-	8.2	-
Rise Time		tr	VDD = 250 V, ID = 3.1 A												-	16	-	ns
Turn-Off Delay Time		td(off)	Rg = 12 , RD = 79 , see fig. 10 b												-	42	-
Fall Time		tf													-	16	-
Internal Drain Inductance		LD	Between lead,										D		-	4.5	-
			6 mm (0.25") from
Internal Source Inductance		LS	package and center of				G								-	7.5	-	nH
			die contact										S
Gate Input Resistance		Rg	f = 1 MHz, open drain												0.5	-	2.7
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current		IS	MOSFET symbol											D	-	-	4.5
			showing the
Pulsed Diode Forward Current a		ISM	integral reverse				G								-	-	18	A
			p - n junction diode											S
Body Diode Voltage		VSD	TJ = 25 °C, IS = 4.5 A, VGS = 0 V b												-	-	1.6	V
Body Diode Reverse Recovery Time		trr	TJ = 25 °C, IF = 3.1 A, dI/dt = 100 A/μs b												-	320	640	ns
Body Diode Reverse Recovery Charge		Qrr													-	1.0	2.0	μC
Forward Turn-On Time		ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width 300 μs; duty cycle 2 %.

S16-0754-Rev. C, 02-May-16	2	Document Number: 91063
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF830, SiHF830

www.vishay.com	Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

<![if ! IE]> <![endif]>(A)

VGS

<![if ! IE]> <![endif]>Resistance

3.0

101

Top

ID = 3.1 A

15 V

VGS = 10 V

10 V

2.5

8.0 V

<![if ! IE]> <![endif]>Current

7.0 V

<![if ! IE]> <![endif]>Source-to-DrainOn

2.0

6.0 V

<![if ! IE]> <![endif]>(Normalized)

5.0 V

1.5

<![if ! IE]> <![endif]>I

5.5 V

<![if ! IE]> <![endif]>, Drain

100

Bottom

4.5 V

4.5 V

1.0

<![if ! IE]> <![endif]>D

<![if ! IE]> <![endif]>,

0.5

TC

= 25 °C

<![if ! IE]> <![endif]>DS(on)

20 µs Pulse Width

10-1

100

101

<![if ! IE]> <![endif]>R

0.0

- 60 - 40 - 20

0

20

40

60

80 100 120 140 160

91063_01

VDS, Drain-to-Source Voltage (V)

91063_04

TJ, Junction Temperature (°C)

Fig. 1 - Typical Output Characteristics, TC = 25 °C					Fig. 4 - Normalized On-Resistance vs. Temperature
			VGS			1500	VGS = 0 V, f = 1 MHz
	101	Top
			15 V
						1250	Ciss = Cgs + Cgd, Cds Shorted
			10 V
							Crss	= Cgd
			8.0 V
<![if ! IE]> <![endif]>Current(A)					<![if ! IE]> <![endif]>(pF)		Coss = Cds + Cgd
			7.0 V			750		Ciss
			5.0 V
			6.0 V			1000
<![if ! IE]> <![endif]>D			5.5 V	4.5 V	<![if ! IE]> <![endif]>Capacitance
<![if ! IE]> <![endif]>Drain	100	Bottom	4.5 V
						500
<![if ! IE]> <![endif]>,								Coss
<![if ! IE]> <![endif]>I
				20 µs Pulse Width		250
								Crss
				T = 150 °C
	10-1			C		0
			100	101			100
								101

91063_02	VDS, Drain-to-Source Voltage (V)	91063_05	V	, Drain-to-Source Voltage (V)
			DS
Fig. 2 - Typical Output Characteristics, TC = 150 °C		Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

<![if ! IE]>

<![endif]>ID, Drain Current (A)

101								20	ID = 3.1 A
							<![if ! IE]> <![endif]>(V)
											VDS = 400 V
	150 °C						<![if ! IE]> <![endif]>Voltage	16
										VDS = 250 V
100		25 °C					<![if ! IE]> <![endif]>Source-to	12	VDS = 100
								8
							<![if ! IE]> <![endif]>, Gate-	4
10-1				20 µs Pulse Width			<![if ! IE]> <![endif]>GS					For test circuit
				VDS = 50 V			<![if ! IE]> <![endif]>V
								0				see figure 13
4	5	6	7	8	9	10
								0	8	16	24	32	40

91063_03	VGS, Gate-to-Source Voltage (V)		91063_06	QG, Total Gate Charge (nC)
	Fig. 3 - Typical Transfer Characteristics		Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage
S16-0754-Rev. C, 02-May-16		3		Document Number: 91063
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000