Vishay IRF820S, SiHF820S, IRF820L, SiHF820L Data Sheet

www.vishay.com

D2PAK (TO-263)

G

D

S

I2PAK (TO-262)

G

D

S

IRF820S, SiHF820S, IRF820L, SiHF820L

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) 500

R

()V

DS(on)

Q

(Max.) (nC) 24

g

Q

(nC) 3.3

gs

Q

(nC) 13

gd

Configuration Single

= 10 V 3.0

GS

G

D

FEATURES

• Surface mount

• Available in tape and reel

• Dynamic dV/dt rating

• Repetitive avalanche rated

• Fast switching

• Ease of paralleling

• Simple drive requirements

• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

Note

*

Thi s datasheet pro vi des information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.

DESCRIPTION

Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,

S

N-Channel MOSFET

ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK (TO-263) is a surface mount power package
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.

ORDERING INFORMATION

Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262)

Lead (Pb)-free and halogen-free SiHF820S-GE3 SiHF820STRL-GE3

Lead (Pb)-free IRF820SPbF IRF820STRLPbF

a

SiHF820STRR-GE3 a SiHF820L-GE3

a

IRF820STRRPbF a IRF820LPbF

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

C

= 100 °C 1.6

C

DS

± 20

GS

I

D

IDM 8.0

Linear Derating Factor 0.40

Linear Derating Factor (PCB mount)

Single Pulse Avalanche Energy

Avalanche Current

a

Repetitive Avalanche Energy

Maximum Power Dissipation T

Maximum Power Dissipation (PCB mount)

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range T

Soldering Recommendations (Peak temperature)

e

b

a

= 25 °C

e

c

d

C

TA = 25 °C 3.1

for 10 s 300

E

AS

I

AR

E

AR

P

D

dV/dt 3.5 V/ns

, T

J

stg

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

= 50 V, starting TJ = 25 °C, L = 60 mH, Rg = 25 , IAS = 2.5 A (see fig. 12).

b. V

DD

c. ISD  2.5 A, dI/dt  50 A/μs, VDD  VDS, TJ  150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).

S15-1659-Rev. D, 20-Jul-15

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

1

500

2.5

0.025

210 mJ

2.5 A

5.0 mJ

50

-55 to +150

Document Number: 91060

Available

Available

V

AT

W/°C

W

°C





IRF820S, SiHF820S, IRF820L, SiHF820L

D

S

G

S

D

G

www.vishay.com

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Ambient 
(PCB mount)

a

Maximum Junction-to-Case (Drain) R

thJA

R

thJA

thJC

-62

-40

-2.5

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.59 - V/°C

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

DS

GS(th)

V

GSS

DSS

VGS = 10 V ID = 1.5 A

DS(on)

fs

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

iss

-92-

oss

-37-

rss

g

--3.3

gs

--13

gd

d(on)

r

-33-

d(off)

-16-

f

D

V

Between lead,
6 mm (0.25") from
package and center of

S

die contact

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

S

I

SM

SD

rr

rr

on

MOSFET symbol
showing the 
integral reverse
p - n junction diode

TJ = 25 °C, IF = 2.1 A, dI/dt = 100 A/μs

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.

VGS = 0, ID = 250 μA 500 - - V

VDS = VGS, ID = 250 μA 2.0 - 4.0 V

= ± 20 V - - ± 100 nA

GS

VDS = 500 V, VGS = 0 V - - 25

= 400 V, VGS = 0 V, TJ = 125 °C - - 250

V

DS

VDS = 50 V, ID = 1.5 A

b

b

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

= 2.1 A, VDS = 400 V,

I

= 10 V

GS

V

R

= 18 , RD = 100 , see fig. 10

g

TJ = 25 °C, IS = 2.5 A, VGS = 0 V

D

see fig. 6 and 13

= 250 V, ID = 2.1 A,

DD

b

b

b

b

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Vishay Siliconix

°C/W

--3.0

1.5 - - S

- 360 -

--24

-8.0-

-8.6-

-4.5-

-7.5-

--2.5

--8.0

--1.6V

- 260 520 ns

-0.701.4μC

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

S15-1659-Rev. D, 20-Jul-15

2

Document Number: 91060

IRF820S, SiHF820S, IRF820L, SiHF820L

10

0

10

-1

10

0

10

1

V

DS

,

Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

Bottom

To p

V

GS

15 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width
T

C

= 150 °C

91060_02

4.5 V

20 µs Pulse Width
V

DS

= 50 V

10

0

10

-1

I

D

, Drain Current (A)

V

GS

,

Gate-to-Source Voltage (V)

5678910

4

25 °C

150 °C

91060_03

I

D

= 2.1 A

V

GS

= 10 V

3.0

0.0

0.5

1.0

1.5

2.0

2.5

T

J

,

Junction Temperature (°C)

R

DS(on)

, Drain-to-Source On Resistance

(Normalized)

91060_04

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

800

600

400

200

0

10

0

10

1

Capacitance (pF)

V

DS

,

Drain-to-Source Voltage (V)

C

iss

C

rss

C

oss

V

GS

= 0 V, f = 1 MHz

C

iss

= Cgs + Cgd, Cds Shorted

C

rss

= C

gd

C

oss

= Cds + C

gd

91060_05

QG, Total Gate Charge (nC)

V

GS

, Gate-to-Source Voltage (V)

20

16

12

8

0

4

04 2016128

V

DS

= 100 V

V

DS

= 250 V

For test circuit
see figure 13

V

DS

= 400 V

91060_06

ID = 2.1 A

24

www.vishay.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

V

GS

To p

15 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Bottom

0

10

, Drain Current (A)

D

I

-1

10

91060_01

4.5 V

0

10

VDS, Drain-to-Source Voltage (V)

20 µs Pulse Width

= 25 °C

T

C

1

10

4.5 V

Vishay Siliconix

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, T

= 150 °C

C

Fig. 4 - Normalized On-Resistance vs. Temperature

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

S15-1659-Rev. D, 20-Jul-15

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 3 - Typical Transfer Characteristics

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

3

Document Number: 91060

www.vishay.com

10

0

VSD, Source-to-Drain Voltage (V)

I

SD

, Reverse Drain Current (A)

0.4

1.2

1.00.80.6

25 °C

150 °C

V

GS

= 0 V

91060_07

10 µs

100 µs

1 ms

10 ms

Operation in this area limited

by R

DS(on)

VDS, Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

TC = 25 °C
T

J

= 150 °C

Single Pulse

10

-2

10

2

0.1

2

5

0.1

2

5

1

2

5

10

2

5

25

1

25

10

25

10

2

25

10

3

25

10

4

91060_08

I

D

, Drain Current (A)

TC, Case Temperature (°C)

0.0

1.0

1.5

2.0

2.5

25 1501251007550

0.5

91060_09

Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

R

D

V

GS

R

g

D.U.T.

10 V

+

-

V

DS

V

DD

V

DS

90 %

10 %

V

GS

t

d(on)

t

r

t

d(off)

t

f

IRF820S, SiHF820S, IRF820L, SiHF820L

Vishay Siliconix

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 10a - Switching Time Test Circuit

Fig. 8 - Maximum Safe Operating Area

Fig. 10b - Switching Time Waveforms

10

)

thJC

Thermal Response (Z

91060_11

S15-1659-Rev. D, 20-Jul-15

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

D = 0.5

1

0.2

0.1

0.05

0.1

0.02

0.01

Single Pulse
(Thermal Response)

Notes:

1. Duty Factor, D = t

-2

10

-5

10

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

-4

10

-3

10

-2

10

t1, Rectangular Pulse Duration (s)

4

For technical questions, contact: [e-mail]

0.1 1 10

2. Peak Tj = PDM x Z

P

DM

Document Number: 91060

t

1

t

2

1/t2

+ T

thJC

C

IRF820S, SiHF820S, IRF820L, SiHF820L

R

g

I

AS

0.01 W

t

p

D.U.T

L

V

DS

+

-

V

DD

10 V

Var y t

p

to obtain

required I

AS

500

0

100

200

300

400

25 150

125

10075

50

Starting TJ, Junction Temperature (°C)

E

AS

, Single Pulse Energy (mJ)

Bottom

To p

I

D

1.1 A

1.6 A

2.5 A

VDD = 50 V

91060_12c

Q

GS

Q

GD

Q

G

V

G

Charge

10 V

www.vishay.com

V

DS

I

AS

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

Vishay Siliconix

V

DS

t

p

V

DD

S15-1659-Rev. D, 20-Jul-15

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator

Same type as D.U.T.

50 kΩ

0.2 µF

12 V

V

GS

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

0.3 µF

3 mA

I

G

Current sampling resistors

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

5

For technical questions, contact: [e-mail]

+

V

D.U.T.

DS

-

I

D

Document Number: 91060

www.vishay.com

P.W.

Period

dI/dt

Diode recovery

dV/dt

Ripple ≤ 5 %

Body diode forward drop

Re-applied
voltage

Reverse
recovery
current

Body diode forward

current

V

GS

= 10 Va

I

SD

Driver gate drive

D.U.T. l

SD

waveform

D.U.T. V

DS

waveform

Inductor current

D =

P.W.

Period

+

-

+

+

+

-

-

-

Peak Diode Recovery dV/dt Test Circuit

V

DD

• dV/dt controlled by R

g

• Driver same type as D.U.T.

•

I

SD

controlled by duty factor “D”

• D.U.T. - device under test

D.U.T.

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

R

g

Note

a. V

GS

= 5 V for logic level devices

V

DD

IRF820S, SiHF820S, IRF820L, SiHF820L

Vishay Siliconix

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91060

S15-1659-Rev. D, 20-Jul-15

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

.

6

For technical questions, contact: [e-mail]

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Document Number: 91060

TO-263AB (HIGH VOLTAGE)

(Datum A)

34

E

L1

4

D

L2

4

C

1

B

B

C

3

2

B

B

Package Information

Vishay Siliconix

A

A

5

H

Detail A

B

A

c2

Gauge
plane

0° to 8°

L

L3

L4

Detail “A”
Rotated 90° CW
scale 8:1

H

B

Seating plane

A1

2 x e

Lead tip

2 x b2

2 x b

0.010 A B

MM

Plating

(c)

Section B - B and C - C

c

± 0.004 B

5

b1, b3

(b, b2)

Scale: none

M

Base
metal

c1

A

E

D1

4

5

E1

View A - A

4

MILLIMETERS INCHES MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.

A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 -

A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420

b 0.51 0.99 0.020 0.039 E1 6.22 - 0.245 -

b1 0.51 0.89 0.020 0.035 e 2.54 BSC 0.100 BSC

b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625

b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110

c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066

c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070

c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC

D 8.38 9.65 0.330 0.380 L4 4.78 5.28 0.188 0.208

ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.

2. Dimensions are shown in millimeters (inches).

3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A.

4. Thermal PAD contour optional within dimension E, L1, D1 and E1.

5. Dimension b1 and c1 apply to base metal only.

6. Datum A and B to be determined at datum plane H.

7. Outline conforms to JEDEC outline to TO-263AB.

Document Number: 91364 www.vishay.com
Revision: 15-Sep-08 1

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Disclaimer



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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
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liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Revision: 13-Jun-16

1

Document Number: 91000