Vishay IRF820AS, SiHF820AS, IRF820AL, SiHF820AL Data Sheet

D2PAK (TO-263)

G

D

S

I2PAK (TO-262)

G

D

S

IRF820AS, SiHF820AS, IRF820AL, SiHF820AL

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) 500

R

(Max.) ()V

DS(on)

Q

(Max.) (nC) 17

g

Q

(nC) 4.3

gs

Q

(nC) 8.5

gd

Configuration Single

= 10 V 3.0

GS

D

FEATURES

• Halogen-free According to IEC 61249-2-21
Definition

• Low Gate Charge Q
Requirement

• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness

• Fully Characterized Capacitance and Avalanche
Voltage and Current

• Effective C

specified

oss

Results in Simple Drive

g

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

G

S

N-Channel MOSFET

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High Speed Power Switching

TYPICAL SMPS TOPOLOGIES

• Two Transistor Forward

• Half Bridge and Full Bridge

ORDERING INFORMATION

Package D2PAK (TO-263) I2PAK (TO-262)

Lead (Pb)-free and Halogen-free SiHF820AS-GE3 SiHF820AL-GE3

Lead (Pb)-free

IRF820ASPbF IRF820ALPbF

SiHF820AS-E3 SiHF820AL-E3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

a, e

at 10 V

GS

C

= 100 °C 1.6

C

DS

± 30

GS

I

D

IDM 10

Linear Derating Factor 0.4 W/°C

c, e

b, e

a

= 25 °C P

C

E

AS

I

AR

E

AR

D

dV/dt 3.4 V/ns

, T

J

stg

Single Pulse Avalanche Energy

Avalanche Current

a

Repetiitive Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range T

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I

SD

d. 1.6 mm from case.

= 25 °C, L = 45 mH, Rg = 25 , IAS = 2.5 A (see fig. 12).

J

 2.5 A, dI/dt  270 A/μs, VDD  VDS, TJ  150 °C.

e. Uses IRF820A, SiHF820A data and test conditions.

500

2.5

140 mJ

2.5 A

5.0 mJ

50 W

- 55 to + 150

d

10 lbf · in

1.1 N · m

V

AT

°C

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91058
S11-1049-Rev. C, 30-May-11 1

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

IRF820AS, SiHF820AS, IRF820AL, SiHF820AL

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient (PCB
Mounted, steady-state)

a

Maximum Junction-to-Case (Drain) R

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Output Capacitance C

Effective Output Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. C

eff. is a fixed capacitance that gives the same charging time as C

oss

d. Uses IRF820A/SiHF820A data and test conditions.

www.vishay.com Document Number: 91058
2 S11-1049-Rev. C, 30-May-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

a

R

thJA

thJC

DS

GS(th)

V

GSS

-62

-2.5

VGS = 0, ID = 250 μA 500 - - V

d

-0.60-V/°C

VDS = VGS, ID = 250 μA 2.0 - 4.5 V

= ± 30 V - - ± 100 nA

GS

VDS = 500 V, VGS = 0 V - - 25

DSS

VGS = 10 V ID = 1.5 A

DS(on)

fs

iss

-53-

oss

-2.7-

rss

oss

eff. VDS = 0 V to 400 V

oss

g

--4.3

gs

--8.5

gd

d(on)

r

-16-

d(off)

-13-

f

S

I

SM

SD

rr

rr

on

V

= 400 V, VGS = 0 V, TJ = 125 °C - - 250

DS

VDS = 50 V, ID = 1.5 A

f = 1.0 MHz, see fig. 5

V

= 0 V

GS

b

d

VGS = 0 V,

V

= 25 V,

DS

V

= 1.0 V, f = 1.0 MHz - 490 -

DS

= 400 V, f = 1.0 MHz - 15 -

V

DS

d

c, d

--3.0

1.4 - - S

- 340 -

-28-

--17

= 2.5 A, VDS = 400 V,

I

V

GS

= 10 V

D

see fig. 6 and 13

b, d

-8.1-

V

= 250 V, ID = 2.5 A,

DD

R

= 21 , RD = 97 , see fig. 10

g

b, d

MOSFET symbol
showing the
integral reverse
p - n junction diode

TJ = 25 °C, IS = 2.5 A, VGS = 0 V

G

b

TJ = 25 °C, IF = 2.5 A, dI/dt = 100 A/μs

D

S

b, d

-12-

--2.5

--10

--1.6V

- 330 500 ns

- 760 1140 nC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

while VDS is rising from 0 % to 80 % VDS.

oss

This document is subject to change without notice.

www.vishay.com/doc?91000

°C/W

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

A

91058_01

Bottom

To p

V

GS

15 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width
T

J

= 25 °C

4.5 V

VDS, Drain-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

10 10

2

10

0.1

10

-2

1

0.1

1

10

2

V

DS

,

Drain-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

Bottom

To p

V

GS

15 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width
T

J

= 150 °C

91058_02

4.5 V

10

0.1

1

101

20 µs Pulse Width
V

DS

= 50 V

10

1

10

-2

I

D

, Drain-to-Source Current (A)

V

GS

,

Gate-to-Source Voltage (V)

5.0 6.0 7.0 8.0 9.0

4.0

91058_03

TJ = 25 °C

TJ = 150 °C

0.1

IRF820AS, SiHF820AS, IRF820AL, SiHF820AL

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Vishay Siliconix

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

3.0
I

= 2.5 A

D

V

= 10 V

GS

2.5

2.0

1.5

(Normalized)

1.0

, Drain-to-Source On Resistance

0.5

DS(on)

0.0

R

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

T

Junction Temperature (°C)

91058_04

,

J

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91058 www.vishay.com
S11-1049-Rev. C, 30-May-11 3

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This document is subject to change without notice.

www.vishay.com/doc?91000