Vishay IRF820, SiHF820 Data Sheet
N-Channel MOSFET
G
D
S
TO-220AB
G
D
S
Available
RoHS*
COMPLIANT
Power MOSFET
IRF820, SiHF820
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 500
R
()V
DS(on)
Q
(Max.) (nC) 24
g
Q
(nC) 3.3
gs
Q
(nC) 13
gd
Configuration Single
= 10 V 3.0
GS
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
•Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free
SnPb
IRF820PbF
SiHF820-E3
IRF820
SiHF820
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
= 25 °C
T
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
= 100 °C 1.6
C
DS
± 20
GS
I
D
IDM 8.0
Linear Derating Factor 0.40 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
b
a
a
= 25 °C P
c
C
E
AS
I
AR
E
AR
D
dV/dt 3.5 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Mounting Torque 6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 50 V, starting TJ = 25 °C, L = 60 mH, Rg = 25 , IAS = 2.5 A (see fig. 12).
DD
c. I
2.5 A, dI/dt 50 A/μs, VDD VDS, TJ 150 °C.
SD
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91059 www.vishay.com
S11-0507-Rev. C, 21-Mar-11 1
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
500
2.5
210 mJ
2.5 A
5.0 mJ
50 W
- 55 to + 150
d
10 lbf · in
1.1 N · m
www.vishay.com/doc?91000
V
AT
°C
IRF820, SiHF820
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Case (Drain) R
thJA
thCS
thJC
-62
0.50 -
-2.5
°C/WCase-to-Sink, Flat, Greased Surface R
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.59 - V/°C
V
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
DS
GS(th)
V
GSS
DSS
VGS = 10 V ID = 1.5 A
DS(on)
fs
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
iss
-92-
oss
-37-
rss
g
--3.3
gs
--13
gd
d(on)
r
-33-
d(off)
-16-
f
D
Between lead,
6 mm (0.25") from
package and center of
Internal Source Inductance L
S
die contact
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
I
SM
SD
rr
rr
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
VGS = 0 V, ID = 250 μA 500 - - V
VDS = VGS, ID = 250 μA 2.0 - 4.0 V
= ± 20 V - - ± 100 nA
GS
VDS = 500 V, VGS = 0 V - - 25
V
= 400 V, VGS = 0 V, TJ = 125 °C - - 250
DS
b
--3.0
VDS = 50 V, ID = 1.5 A 1.5 - - S
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
- 360 -
--24
= 2.1 A, VDS = 400 V,
I
V
= 10 V
GS
D
see fig. 6 and 13
b
-8.0-
V
= 250 V, ID = 2.1 A,
DD
R
= 18 , RD = 100 , see fig. 10
g
TJ = 25 °C, IS = 2.5 A, VGS = 0 V
b
D
G
S
D
G
S
b
TJ = 25 °C, IF = 2.1 A, dI/dt = 100 A/s
-8.6-
-4.5-
-7.5-
--2.5
--8.0
--1.6V
- 260 520 ns
-0.71.4nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
μA
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
A
www.vishay.com Document Number: 91059
2 S11-0507-Rev. C, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
20 µs Pulse Width
V
DS
= 50 V
10
0
10
-1
I
D
, Drain Current (A)
V
GS
,
Gate-to-Source Voltage (V)
5678910
4
25 °C
150 °C
91059_03
IRF820, SiHF820
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
V
GS
To p
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom
0
10
, Drain Current (A)
D
I
-1
10
91059_01
Fig. 1 - Typical Output Characteristics, TC = 25 °C
4.5 V
0
10
VDS, Drain-to-Source Voltage (V)
20 µs Pulse Width
= 25 °C
T
C
1
10
4.5 V
Vishay Siliconix
Fig. 3 - Typical Transfer Characteristics
V
15 V
GS
To p
10 V
8.0 V
7.0 V
6.0 V
Bottom
0
5.5 V
5.0 V
4.5 V
V
Drain-to-Source Voltage (V)
,
DS
0
10
, Drain Current (A)
D
I
-1
10
10
91059_02
Fig. 2 - Typical Output Characteristics, T
20 µs Pulse Width
= 150 °C
T
C
1
10
4.5 V
= 150 °C
C
3.0
I
= 2.1 A
D
= 10 V
V
GS
2.5
2.0
1.5
(Normalized)
1.0
, Drain-to-Source On Resistance
0.5
DS(on)
0.0
R
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
T
Junction Temperature (°C)
91059_04
,
J
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91059 www.vishay.com
S11-0507-Rev. C, 21-Mar-11 3
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
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