Vishay IRF730AS, SiHF730AS, IRF730AL, SiHF730AL Data Sheet

N-Channel MOSFET

G

D

S

D2PAK (TO-263)

G

D

S

I2PAK (TO-262)

G

D

S

IRF730AS, SiHF730AS, IRF730AL, SiHF730AL

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) 400

(Max.) ()V

R

DS(on)

Q

(Max.) (nC) 22

g

Q

(nC) 5.8

gs

Q

(nC) 9.3

gd

Configuration Single

= 10 V 1.0

GS

FEATURES

• Halogen-free According to IEC 61249-2-21
Definition

• Low Gate Charge Q
Requirement

• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness

• Fully Characterized Capacitance and Avalanche Voltage
and Current

• Effective C

Specified

oss

Results in Simple Drive

g

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High Sspeed Power Switching

TYPICAL SMPS TOPOLOGIES

• Single Transistor Flyback Xfmr. Reset

• Single Transistor Forward Xfmr. Reset (Both US Line Input
Only)

ORDERING INFORMATION

Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262)
Lead (Pb)-free and Halogen-free SiHF730AS-GE3

Lead (Pb)-free

IRF730ASPbF IRF730ASTRLPbF
SiHF730AS-E3 SiHF730ASTL-E3

SiHF730ASTRL-GE3

Note

a. See device orientation.

a

SiHF730ASTRR-GE3a SiHF730AL-GE3

a

IRF730ASTRRPbFa IRF730ALPbF

a

SiHF730ASTR-E3

a

SiHF730AL-E3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate-Source Voltage V

= 25 °C

T

Continuous Drain Current V

Pulsed Drain Current

a, e

at 10 V

GS

C

= 100 °C 3.5

C

DS

± 30

GS

I

D

IDM 22

Linear Derating Factor 0.6 W/°C

c, e

b, e

a

= 25 °C P

C

E

AS

I

AR

E

AR

D

dV/dt 4.6 V/ns

, T

J

stg

Single Pulse Avalanche Energy
Avalanche Current

a

Repetiitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak Temperature) for 10 s 300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I

SD

d. 1.6 mm from case.

= 25 °C, L = 19 mH, Rg = 25 , IAS = 5.5 A (see fig. 12).

J

 5.5 A, dI/dt  90 A/μs, VDD  VDS, TJ  150 °C.

e. Uses IRF730A, SiHF730A data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91046
S11-1048-Rev. C, 30-May-11 1

This document is subject to change without notice.

www.vishay.com

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

400

5.5

290 mJ

5.5 A

7.4 mJ
74 W

- 55 to + 150

d

www.vishay.com/doc?91000

V

AT

°C

IRF730AS, SiHF730AS, IRF730AL, SiHF730AL

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient
(PCB Mounted, steady-state)

a

Maximum Junction-to-Case (Drain) R

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Output Capacitance C

Effective Output Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. C

eff. is a fixed capacitance that gives the same charging time as C

oss

d. Uses IRF730A, SiHF730A data and test conditions.

www.vishay.com Document Number: 91046
2 S11-1048-Rev. C, 30-May-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

a

R

thJA

thJC

DS

GS(th)

V

GSS

-40

-1.7

VGS = 0, ID = 250 μA 400 - - V

d

-0.5-V/°C

VDS = VGS, ID = 250 μA 2.0 - 4.5 V

= ± 30 V - - ± 100 nA

GS

VDS = 400 V, VGS = 0 V - - 25

DSS

VGS = 10 V ID = 3.3 A

DS(on)

fs

iss

- 103 -

oss

-4.0-

rss

oss

eff. VDS = 0 V to 320 V

oss

g

--5.8

gs

--9.3

gd

d(on)

r

-20-

d(off)

-16-

f

S

I

SM

SD

rr

rr

on

V

= 320 V, VGS = 0 V, TJ = 125 °C - - 250

DS

VDS = 50 V, ID = 3.3 A

f = 1.0 MHz, see fig. 5

V

= 0 V

GS

b

d

VGS = 0 V,

V

= 25 V,

DS

V

= 1.0 V, f = 1.0 MHz - 890 -

DS

= 320 V, f = 1.0 MHz - 30 -

V

DS

d

c, d

--1.0

3.1 - - S

- 600 -

-45-

--22

= 3.5 A, VDS = 320 V,

I

V

GS

= 10 V

D

see fig. 6 and 13

b, d

-10-

V

= 200 V, ID = 3.5 A,

DD

R

= 12 , RD = 57 , see fig. 10

g

b, d

MOSFET symbol
showing the
integral reverse
p - n junction diode

TJ = 25 °C, IS = 5.5 A, VGS = 0 V

G

b

TJ = 25 °C, IF = 3.5 A, dI/dt = 100 A/μs

D

S

b, d

-22-

--5.5

--22

--1.6V

- 370 550 ns

-1.62.4μC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

while VDS is rising from 0 % to 80 % VDS.

oss

This document is subject to change without notice.

www.vishay.com/doc?91000

°C/W

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

A

91046_01

Bottom

To p

V

GS

15 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width
T

C

= 25 °C

4.5 V

VDS, Drain-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

1

10

10

2

10

10

-2

1

0.1

0.1

10

2

10

2

1

10

-2

1

10

V

DS

,

Drain-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

Bottom

To p

V

GS

15 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width
T

C

= 150 °C

91046_02

4.5 V

10

0.1

0.1

10

2

20 µs Pulse Width
V

DS

= 50 V

10

2

10

0.1

I

D

, Drain-to-Source Current (A)

V

GS

,

Gate-to-Source Voltage (V)

5.0 6.0 7.0 8.0 9.0 10.0

4.0

91046_03

TJ = 25 °C

TJ = 150 °C

1

IRF730AS, SiHF730AS, IRF730AL, SiHF730AL

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Vishay Siliconix

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

2.5
I

= 5.5 A

D

= 10 V

V

GS

2.0

1.5

1.0

(Normalized)

0.5

, Drain-to-Source On Resistance

DS(on)

0.0

R

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

T

Junction Temperature (°C)

91046_04

,

J

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91046 www.vishay.com
S11-1048-Rev. C, 30-May-11 3

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This document is subject to change without notice.

www.vishay.com/doc?91000