Vishay IRF634S, SiHF634S Data Sheet

IRF634S, SiHF634S

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)		250
RDS(on) ( )	VGS = 10 V	0.45
Qg (Max.) (nC)		41
Qgs (nC)		6.5
Qgd (nC)		22
Configuration		Single
		D
D2PAK (TO-263)
	G
D	S
G		S
		S

N-Channel MOSFET

FEATURES

•Halogen-free According to IEC 61249-2-21 Definition

• Surface Mount

• Available in Tape and Reel

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

•Fast Switching

•Ease of Paralleling

•Simple Drive Requirements

•Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.

ORDERING INFORMATION

Package	D2PAK (TO-263)					D2PAK (TO-263)
Lead (Pb)-free and Halogen-free	SiHF634S-GE3					SiHF634STRR-GE3a
Lead (Pb)-free	IRF634SPbF					IRF634STRRPbFa
Lead (Pb)-free	SiHF634S-E3					SiHF634STR-E3a
	SiHF634S-E3					SiHF634STR-E3a
Note
a. See device orientation

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER					SYMBOL		LIMIT		UNIT

Drain-Source Voltage					VDS		250		V
Gate-Source Voltage					VGS		± 20		V
Gate-Source Voltage					VGS		± 20
Continuous Drain Current		VGS at 10 V		TC = 25 °C	ID		8.1
Continuous Drain Current		VGS at 10 V		TC = 100 °C	ID		5.1		A
				TC = 100 °C			5.1		A
Pulsed Drain Currenta					IDM		32
Linear Derating Factor							0.59		W/°C

Linear Derating Factor (PCB Mount)e							0.025
Linear Derating Factor (PCB Mount)e							0.025
Single Pulse Avalanche Energyb					EAS		300		mJ
Avalanche Currenta					IAR		8.1		A
Repetitive Avalanche Energya					EAR		7.4		mJ
Maximum Power Dissipation			TC = 25 °C		PD		74		W
Maximum Power Dissipation (PCB Mount)e			TA = 25 °C		PD		3.1		W
Maximum Power Dissipation (PCB Mount)e			TA = 25 °C				3.1
Peak Diode Recovery dV/dtc					dV/dt		4.8		V/ns
Operating Junction and Storage Temperature Range					TJ, Tstg		- 55 to + 150		°C
Soldering Recommendations (Peak Temperature)			for 10 s				300d		°C
Soldering Recommendations (Peak Temperature)			for 10 s				300d
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 7.3 mH, Rg = 25 , IAS = 8.1 A (see fig. 12).
c. ISD 8.1 A, dI/dt 120 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91035								www.vishay.com
S11-1047-Rev. C, 30-May-11								1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF634S, SiHF634S

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER	SYMBOL	TYP.	MAX.	UNIT

Maximum Junction-to-Ambient	RthJA	-	62
Maximum Junction-to-Ambient	RthJA	-	40	°C/W
(PCB Mount)a	RthJA	-	40	°C/W
Maximum Junction-to-Case (Drain)	RthJC	-	1.7

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0, ID = 250 μA

250

VDS Temperature Coefficient

VDS/TJ

Reference to 25 °C, ID = 1 mA

0.37

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.0

4.0

Gate-Source Leakage

IGSS

VGS = ± 20 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 250 V, VGS = 0 V

μA

VDS = 200 V, VGS = 0 V, TJ = 125 °C

250

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 5.1 Ab

0.45

Forward Transconductance

gfs

VDS = 50 V, ID = 5.1 Ab

1.6

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

770

Output Capacitance

Coss

VDS = 25 V,

190

f = 1.0 MHz, see fig. 5

Reverse Transfer Capacitance

Crss

Total Gate Charge

ID = 5.6 A, VDS = 200 V,

Gate-Source Charge

Qgs

VGS = 10 V

6.5

see fig. 6 and 13b

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

9.6

Rise Time

VDD = 125 V, ID = 5.6 A,

Turn-Off Delay Time

td(off)

Rg = 12 , RD = 22 , see fig. 10b

Fall Time

Internal Drain Inductance

Between lead,

4.5

6 mm (0.25") from

Internal Source Inductance

package and center of

7.5

die contact

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

8.1

showing the

integral reverse

Pulsed Diode Forward Currenta

ISM

p - n junction diode

Body Diode Voltage

VSD

TJ = 25 °C, IS = 8.1 A, VGS = 0 Vb

2.0

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/μsb

220

440

Body Diode Reverse Recovery Charge

Qrr

1.2

2.4

μC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width 300 μs; duty cycle 2 %.

www.vishay.com	Document Number: 91035
2	S11-1047-Rev. C, 30-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF634S, SiHF634S

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Top

VGS

15 V

10 V

<![if ! IE]>

<![endif]>(A)

101

8.0 V

7.0 V

<![if ! IE]>

<![endif]>Current

6.0 V

5.5 V

5.0 V

<![if ! IE]>

<![endif]>Drain

Bottom 4.5 V

100

<![if ! IE]>

<![endif]>,

<![if ! IE]>

<![endif]>D

4.5 V

<![if ! IE]>

<![endif]>I

20 µs Pulse Width

TC = 25 °C

10-1

100

101

91035_01

VDS, Drain-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Top

VGS

15 V

101

10 V

<![if ! IE]>

<![endif]>(A)

8.0 V

7.0 V

<![if ! IE]>

<![endif]>Current

6.0 V

5.5 V

5.0 V

<![if ! IE]>

<![endif]>Drain

100

Bottom

4.5 V

<![if ! IE]>

<![endif]>,

<![if ! IE]>

<![endif]>D

<![if ! IE]>

<![endif]>I

20 µs Pulse Width

TC = 150 °C

100

101

91035_02

VDS, Drain-to-Source Voltage (V)

<![if ! IE]> <![endif]>(A)	101





		150	°C
<![if ! IE]> <![endif]>Current




				25 °C
<![if ! IE]> <![endif]>Drain,	100			25 °C
<![if ! IE]> <![endif]>D
<![if ! IE]> <![endif]>D
<![if ! IE]> <![endif]>I

							20 µs Pulse Width
	10-1						VDS = 50 V



	4		5	6	7	8		9	10
91035_03			VGS, Gate-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics

<![if ! IE]> <![endif]>Resistance	3.0
	3.0	ID	= 5.6 A
		ID	= 5.6 A
<![if ! IE]> <![endif]>Source-to-DrainOn (Normalized)	2.5	VGS = 10 V
	2.5
	2.0


	1.5


	1.0


<![if ! IE]> <![endif]>,	0.5
	0.5

<![if ! IE]> <![endif]>DS(on)	0.0
<![if ! IE]> <![endif]>DS(on)
<![if ! IE]> <![endif]>R
	- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91035_04				TJ, Junction Temperature (°C)

Fig. 2 - Typical Output Characteristics, TC = 150 °C

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91035	www.vishay.com
S11-1047-Rev. C, 30-May-11	3

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

+ 6 hidden pages