VISHAY FCSP2H40LTR Technical data
®
FCSP2H40LTR
Vishay High Power Products
Chip Scale Package Schottky Barrier Rectifier
FlipKY
PRODUCT SUMMARY
I
F(AV)
V
R
FlipKY
®
FEATURES
• Ultra low VF per footprint area
• Low leakage
• Low thermal resistance
• One-fifth footprint of SMA
RoHS
COMPLIANT
• Super low profile (0.6 mm)
• Available tested on tape and reel
APPLICATIONS
®
• Reverse polarity protection
• Current steering
• Freewheeling
•Flyback
•Oring
DESCRIPTION
Vishay's FlipKY® product family utilizes wafer level
chip scale packaging to deliver Schottky diodes with the
to PCB footprint area in industry. The four
F
1.5 A
40 V
lowest V
bump 1.5 x 1.5 mm devices can deliver up to 1.5 A and
occupy only 2.3 mm2 of board space. The anode and
cathode connections are made through solder bump pads on
one side of the silicon enabling designers to strategically
place the diodes on the PCB. This design not only minimizes
board space but also reduces thermal resistance and
inductance, which can improve overall circuit efficiency.
Typical applications include hand-held, portable equipment
such as cell phones, MP3 players, bluetooth, GPS, PDAs,
and portable hard disk drives where space savings and
performance are crucial.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS MAX. UNITS
V
RRM
I
F(AV)
I
FSM
V
F
T
J
Rectangular waveform 1.5
at 1.5 Apk, TJ = 125 °C 0.47 V
40 V
250
- 55 to 150 °C
A
VOLTAGE RATINGS
PARAMETER SYMBOL FCSP2H40LTR UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
Document Number: 94496 For technical questions, contact: diodes-tech@vishay.com
Revision: 23-Aug-07 1
R
RWM
40 V
www.vishay.com
FCSP2H40LTR
Vishay High Power Products
FlipKY
®
Chip Scale Package
Schottky Barrier Rectifier
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle
non-repetitive surge current at 25 °C
F(AV)
I
FSM
Non-repetitive avalanche energy E
Repetitive avalanche current I
AR
ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
Maximum forward
voltage drop
See fig. 1
Maximum reverse
leakage current
See fig. 2
Maximum junction capacitance C
Maximum voltage rate of charge dv/dt Rated V
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
(1)
V
FM
(1)
I
RM
T
50 % duty cycle at T
5 µs sine or 3 µs rect. pulse
= 102 °C, rectangular waveform 1.5
PCB
Following any rated load
250
condition and with rated
10 ms sine or 6 ms rect. pulse 21
TJ = 25 °C, IAS = 2.0 A, L = 5.0 mH 10 mJ
AS
Current decaying linearly to zero in 1 µs
Frequency limited by T
at 1.5 A
at 3 A 0.60 0.65
at 1.5 A
at 3 A 0.54 0.59
TJ = 25 °C
T
= 125 °C
J
maximum VA = 1.5 x VR typical
J
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
= 20 V 0.5 1
V
R
V
= 10 V 0.2 0.5
R
V
= 5 V 0.15 0.3
R
V
= Rated V
R
= 20 V 0.9 2
V
R
V
= 10 V 0.6 1.5
R
V
= 5 V 0.5 1
R
V
RRM
R
R
applied
2.0 A
0.52 0.56
0.42 0.47
315
2.5 4
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C - 160 pF
R
- 10 000 V/µs
A
V
µA
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
Maximum storage temperature range T
Typical thermal resistance,
junction to PCB
Maximum thermal resistance,
junction to ambient
Notes
dP
(1)
------------dT
(2)
Mounted 1" square PCB
1
tot
J
thermal runaway condition for a diode on its own heatsink
--------------<
R
thJA
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
2 Revision: 23-Aug-07
(1)
J
Stg
(2)
R
thJL
DC operation 40
- 55 to 150 °C
°C/W
R
thJA
62
Document Number: 94496
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