Datasheet FCP7N60, FCPF7N60, FCPF7N60YD Datasheet (Fairchild)

FCP7N60/FCPF7N60/FCPF7N60YDTU

FCP7N60/FCPF7N60/FCPF7N60YDTU

Features

•650V @TJ = 150°C

• Typ. Rds(on)=0.53Ω

• Ultra low gate charge (typ. Qg=25nC)

• Low effective output capacitance (typ. Coss.eff=60pF)

• 100% avalanche tested

• RoHS Compliant

G

D

S

TO-220

FCP Series

D

G

S

Description

SuperFETTM is, Fairchild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize con­duction loss, provide superior switching performance, and with­stand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system min­iaturization and higher efficiency.

TO-220F

FCPF Series

December 2008

SuperFET

D

{

{

z

z









z

G

{

{

z
z

z

{

{

S

TM

Absolute Maximum Ratings

Symbol Parameter FCP7N60 FCPF7N60 Unit

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

T

J, TSTG

T

L

*Drain current limited by maximum junction temperature

Drain-Source Voltage 600 V
Drain Current - Continuous (TC = 25°C)

- Continuous (T

Drain Current - Pulsed
Gate-Source voltage ± 30 V

Single Pulsed Avalanche Energy
Avalanche Current (Note 1) 7A
Repetitive Avalanche Energy (Note 1) 8.3 mJ

Power Dissipation (TC = 25°C)

- Derate above 25°C
Operating and Storage Temperature Range -55 to +150 °C
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

= 100°C)

C

(Note 1)

(Note 2)

(Note 3) 4.5 V/ns

7

4.4
21 21*

230 mJ

83

0.67

300 °C

7*

4.4*

31

0.25

Thermal Characteristics

Symbol Parameter FCP7N60 FCPF7N60 Unit

R

θJC

R

θJA

Thermal Resistance, Junction-to-Case 1.5 4.0 °C/W
Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

A
A

A

W

W/°C

©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A1

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FCP7N60 FCP7N60 TO-220 - - 50
FCPF7N60 FCPF7N60 TO-220F - - 50
FCPF7N60 FCPF7N60YDTU TO-220F (Forming) - - 50

FCP7N60/FCPF7N60/FCPF7N60YDTU

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Conditions Min Typ Max Units

Off Characteristics

BV

DSS

ΔBV
/ ΔT

BV

DS

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

C

oss

C

oss

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C 600 -- -- V

V

= 0V, ID = 250μA, TJ = 150°C -- 650 -- V

GS

Breakdown Voltage Temperature

DSS

Coefficient

J

Drain-Source Avalanche Breakdown
Voltage

Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V

I

= 250μA, Referenced to 25°C--0.6--V/°C

D

VGS = 0V, ID = 7A

= 480V, TC = 125°C

V

DS

-- 700 -- V

--

--

--

--

1

10

μA
μA

Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250μA3.0--5.0V
Static Drain-Source

On-Resistance

= 10V, ID = 3.5A -- 0.53 0.6 Ω

V

GS

Forward Transconductance VDS = 40V, ID = 3.5A -- 6 -- S

Input Capacitance VDS = 25V, VGS = 0V,
Output Capacitance -- 380 500 pF

f = 1.0MHz

-- 710 920 pF

Reverse Transfer Capacitance -- 34 -- pF
Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz -- 22 29 pF

eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 60 -- pF

Turn-On Delay Time VDD = 300V, ID = 7A

= 25Ω

R

Turn-On Rise Time -- 55 120 ns

G

-- 35 80 ns

Turn-Off Delay Time -- 75 160 ns
Turn-Off Fall Time -- 32 75 ns
Total Gate Charge VDS = 480V, ID = 7A

= 10V

V

Gate-Source Charge -- 4.2 5.5 nC

GS

Gate-Drain Charge -- 11.5 -- nC

(Note 4)

-- 23 30 nC

(Note 4)

Maximum Continuous Drain-Source Diode Forward Current -- -- 7 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 21 A
Drain-Source Diode Forward Voltage VGS = 0V, IS = 7A -- -- 1.4 V
Reverse Recovery Time VGS = 0V, IS = 7A

/dt =100A/μs

dI

Reverse Recovery Charge -- 4.5 -- μC

F

-- 360 -- ns

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. IAS = 3.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 7A, di/dt ≤ 200A/μs, VDD ≤ BV

4. Essentially Independent of Operating Temperature Typical Characteristics

, Starting TJ = 25°C

DSS

FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A1

2 www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

V

GS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

1

6.5 V

10

6.0 V
Bottom : 5.5 V

0

10

, Drain Current [A]

D

I

-1

10

-1

10

0

10

Notes :※

1. 250μ s Pulse Test
= 25℃

2. T

C

1

10

VDS, Drain-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

2.0

1.8

1.6

1.4

1.2

[Ω ],

1.0

DS(ON)

R

0.8

0.6

Drain-Source On-Resistance

0.4

0.2

0.0
0 5 10 15 20

VGS = 10V

VGS = 20V

Note : T※J = 25℃

ID, Drain Current [A]

1

10

150℃

0

10

, Drain Current [A]

D

I

-1

10

246810

25℃

-55℃

VGS , Gate-Source Voltage [V]

and Temperatue

1

10

0

10

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

150℃

25℃

VSD , Sourc e -Drain Voltag e [V]

Note※

1. VDS = 40V

2. 250μ s Pulse Test

Notes :※

1. VGS = 0V

2. 250μs Pulse Test

FCP7N60/FCPF7N60/FCPF7N60YDTU

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

3000

2000

C

1000

Capacitance [pF]

0

-1

10

C

iss

C

rss

VDS, Drain - Source Vo lt age [V]

FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A1

oss

0

10

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

Notes :※

1. VGS = 0 V

2. f = 1 MHz

1

10

12

VDS = 100V

10

VDS = 250V

VDS = 400V

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 5 10 15 20 25

Note : I※D = 7A

QG, Total Gate Charg e [n C ]

3 www.fairchildsemi.com

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

1.2

3.0

2.5

1.1

2.0

FCP7N60/FCPF7N60/FCPF7N60YDTU

1.0

, (Normalized)

BV

DSS

0.9

Notes :※

1. VGS = 0 V

2. I

Drain-Source Breakdown Voltage

0.8

-100 -50 0 50 100 150 200

TJ, Junction Temperature [oC]

= 250 μ A

D

1.5

, (Normalized)

DS(ON)

1.0

R

Drain-Source On-Resistance

0.5

0.0

-100 -50 0 50 100 150 200

TJ, Junction Temperature [oC]

Notes :※

1. VGS = 10 V

2. I

= 3.5 A

D

Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area

for FCP7N60 for FCPF7N60

2

10

1

10

0

10

, Drain Current [A]

D

I

-1

10

-2

10

10

Operation in This Area
is Limited by R

Notes :※

1. TC = 25 oC
= 150 oC

2. T

J

3. Single Pulse

0

DS(on)

1

10

VDS, Drain-Source Voltage [V]

2

10

Operation in This Area
is Limited by R

DS(on)

100 us

1 ms

1

10

10 ms

DC

2

10

3

10

, Drain Current [A]
I

10

D

10

10

0

-1

1. TC = 25 oC

2. T

3. Single Pulse

-2
0

10

Notes :※

= 150 oC

J

VDS, Drain-Source Voltage [V]

100 us

1 ms

10 ms

100 ms

DC

1

10

2

10

3

10

Figure 10. Maximum Drain Current

vs. Case Temperature

10.0

7.5

5.0

, Drain Current [A]

D

I

2.5

0.0
25 50 75 100 125 150

TC, Case Temperature [ ]℃

FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A1

4 www.fairchildsemi.com

Typical Performance Characteristics (Continued)

Figure 11-1. Transient Thermal Response Curve for FCP7N60

0

10

D=0.5

FCP7N60/FCPF7N60/FCPF7N60YDTU

0.2

0.1

-1

0.05

10

No te s :※

1. Z

2. D u ty F a ctor, D = t1/t

3. TJM - TC = PDM * Z

0.02

0.01

(t), Thermal Response

θ JC

Z

-2

10

10

single pulse

-5

-4

10

-3

10

-2

10

P

DM

-1

10

t1, Square Wave P ulse Duration [sec]

Figure 11-2. Transient Thermal Response Curve for FCPF7N60

D=0.5

0

10

0.2

0.1

0.05

-1

0.02

10

0.01

(t), Thermal Response

θ JC

Z

-2

10

-5

10

single pulse

-4

10

-3

10

-2

10

t1, Square Wave P ulse Duration [sec]

No te s :※

1. Z

2. D u ty F a c to r , D =t1/t

3. TJM - TC = PDM * Z

P

-1

10

(t) = 1.5 /W M a x.℃

θ JC

(t) 4.0 /W M ax.℃

θ JC

DM

2

(t)

θ JC

t

1

t

2

0

10

2

(t)

θ JC

t

1

t

2

0

10

1

10

1

10

FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A1

5 www.fairchildsemi.com

12V

12V

200nF

200nF

3mA

3mA

50KΩ

50KΩ

V

V

Gate Charge Test Circuit & Waveform

Same Type

Same Type

as DUT

as DUT

300nF

300nF

V

V

DS

GS

GS

DUT

DUT

DS

Resistive Switching Test Circuit & Waveforms

V

V

10V

10V

GS

GS

FCP7N60/FCPF7N60/FCPF7N60YDTU

Q

Q

g

g

Q

Q

gs

gs

Q

Q

gd

gd

Charge

Charge

10V

10V

10V

10V

R

R

L

DUT

DUT

L

V

V

DD

DD

V

V

DS

DS

V

V

GS

GS

R

R

G

G

V

V

DS

DS

90%

90%

10%

10%

V

V

GS

GS

t

t

d(o n)tr

d(o n)tr

t

t

on

on

t

t

d(o ff)

d(o ff)

t

t

f

f

t

t

off

off

Unclamped Inductive Switching Test Circuit & Waveforms

BV

BV

DSS

L

LL

V

V

DS

DS

BV

BV

DSS

V

V

DSS

I

I

AS

AS

DD

DD

I

IDI

D

D

R

R

G

G

DUT

DUT

t

t

p

p

V

V

DD

DD

E

E

=LI

E

=LI

=LI

AS

AS

AS

1

1

1

1

----

----

----

---­2

2

2

2

2

2

2

AS

AS

AS

(t)

(t)

I

I

D

D

t

t

p

p

--------------------

-------------------­BV

BV

DSS-VDD

DSS-VDD

DSS

Time

Time

V

(t)

V

(t)

DS

DS

FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A1

6 www.fairchildsemi.com

Peak Diode Recovery dv/dt Test Circuit & Waveforms

+

+

V

V

DS

DS

_

_

L

LL

Sam e Type

Sam e Type

as DU T

as DU T

• dv/dt controlled by R

• dv/dt controlled by R

•ISDcontrolled by pulse period

•ISDcontrolled by pulse period

G

G

V

V

GS

GS

R

R

G

G

DUT

DUT

I

I

SD

SD

Driver

Driver

V

V

DD

DD

FCP7N60/FCPF7N60/FCPF7N60YDTU

V

V

GS

GS

( D r iv e r )

( D r iv e r )

I

I

SD

SD

( DUT )

( DUT )

V

V

DS

DS

( DUT )

( DUT )

G ate Pulse W idth

G ate Pulse W idth

G ate Pulse W idth

--------------------------

--------------------------

--------------------------

D =

D =

D =

G ate Pulse Period

G ate Pulse Period

G ate Pulse Period

IFM, B ody Diode Forw ard C urrent

IFM, B ody Diode Forw ard C urrent

I

I

RM

RM

Body Diode R everse Current

Body Diode R everse Current

Body D iode R ecovery dv/dt

Body D iode R ecovery dv/dt

V

V

SD

SD

Body Diode

Body Diode

Forw ard Voltage D rop

Forw ard Voltage D rop

di/dt

di/dt

10V

10V

V

V

DD

DD

FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A1

7 www.fairchildsemi.com

Mechanical Dimensions

FCP7N60/FCPF7N60/FCPF7N60YDTU

TO - 220

FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A1

Dimensions in Millimeters

8 www.fairchildsemi.com

Mechanical Dimensions (Continued)

10.16 ±0.20

TO-220F

ø3.18 ±0.10

2.54

FCP7N60/FCPF7N60/FCPF7N60YDTU

±0.20

3.30 ±0.10

15.80 ±0.20

9.75 ±0.30

MAX1.47

0.80 ±0.10

(7.00)

(30°)

6.68 ±0.20

(1.00x45°)

(0.70)

15.87 ±0.20

0.35 ±0.10

#1

2.54TYP

[2.54

±0.20]

9.40 ±0.20

FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A1

2.54TYP

[2.54

±0.20]

+0.10

0.50

–0.05

2.76 ±0.20

4.70 ±0.20

Dimensions in Millimeters

9 www.fairchildsemi.com

Mechanical Dimensions (Continued)

TO-220F (Y Forming)

FCP7N60/FCPF7N60/FCPF7N60YDTU

FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A1

10 www.fairchildsemi.com

TRADEMARKS

The following includes registered and unregistered trademarks and se rvice marks, owned by Fairchild Semiconductor and/or its global subsidiarie s, and i s not
intended to be an exhaustive list of all such trademarks.

Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK
EfficentMax™
EZSWITCH™ *

™

Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FlashWriter
FPS™

®

®

tm

®

®
®

®

*

®

F-PFS™

* EZSWITCH™ and FlashWriter

®

are trademarks of System General Corporation, used under license by Fairchild Semiconductor.

®

FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC
OPTOPLANAR

PDP SPM™
Power-SPM™
PowerTrench
PowerXS™

®

®

tm

®

®

SM

Programmable Active Droop™

®

QFET
QS™
Quiet Series™
RapidConfigure™

™

Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™

®

SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™

®

The Power Franchise

®

TinyBoost™

tm

TinyBuck™

®

TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
μSerDes™

®

UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.

FCP7N60/FCPF7N60/FCPF7N60YDTU

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b ) support or sustain li fe,
and (c) whose failure to perform when properly u sed in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Farichild’s Anti-Counterfeiting Policy is also stated on our external website,
www.fairchildsemi.com, under Sales Support

.

2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.

Counterfeiting of semiconductor parts is a growing problem in the industry. All man ufactures of semiconduct or products are exp eriencing counterf eiting of their
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PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Produ ctio n

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinu ed by Fairchild
Semiconductor. The datashe et is for reference information only.

Rev. I37

FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A1

11 www.fairchildsemi.com