Vishay FCSP130TR Data Sheet
FlipKY
FCSP130TR
Vishay High Power Products
FlipKY®, 1.0 A
FEATURES
• Ultra low VF per footprint area
• Low thermal resistance
• One-fifth footprint of SMA
• Super low profile (< 0.7 mm)
• Available tested on tape and reel
• Small footprint, surface mountable
®
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free
• Designed for consumer level
RoHS
COMPLIANT
DESCRIPTION
True chip-scale packaging is available from Vishay HPP.
The FCSP130TR surface mount Schottky rectifier has been
PRODUCT SUMMARY
I
F(AV)
V
R
1.0 A
30 V
designed for applications requiring low forward drop and very
small footprints on PC boards. Typical applications are in
disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
®
The FlipKY
package, is one-fifth the footprint of a
comparable SMA package and has a profile of less then
0.7 mm. Combined with the low thermal resistance of the die
level device, this makes the FlipKY
the best device for
application where printed circuit board space is at a premium
and in extremely thin application environments such as
battery packs, cell phones and PCMCIA cards.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
Rectangular waveform 1.0 A
30 V
tp = 5 µs sine 220 A
1.0 Apk, TJ = 125 °C 0.33 V
Range - 55 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL FCSP130TR UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
Document Number: 94278 For technical questions, contact: diodes-tech@vishay.com
Revision: 02-Jul-08 1
R
RWM
30 V
www.vishay.com
FCSP130TR
Vishay High Power Products
FlipKY®, 1.0 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle
non-repetitive surge current at 25 °C
Non-repetitive avalanche energy E
Repetitive avalanche current I
F(AV)
I
FSM
AR
50 % duty cycle at T
5 µs sine or 3 µs rect. pulse
= 120 °C, rectangular waveform 1.0
PCB
Following any rated
load condition and with
10 ms sine or 6 ms rect. pulse 21
TJ = 25 °C, IAS = 2.0 A, L = 5.0 mH 10 mJ
AS
rated V
RRM
applied
Current decaying linearly to zero in 1 µs
Frequency limited by T
maximum VA = 1.5 x VR typical
J
220
2.0 A
A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
1 A
Maximum forward voltage drop
See fig. 1
V
FM
2 A 0.46 0.50
(1)
1 A
2 A 0.37 0.40
Maximum reverse leakage current
See fig. 2
Maximum junction capacitance C
(1)
I
RM
VR = Rated V
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C - 210 pF
T
Maximum voltage rate of change dV/dt Rated V
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
T
= 25 °C
J
= 125 °C
T
J
TJ = 25 °C 30 100 µA
R
R
T
= 125 °C 10 30 mA
J
0.41 0.45
0.29 0.33
- 10 000 V/µs
V
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Typical thermal resistance,
junction to PCB
Maximum thermal resistance,
junction to ambient
Notes
dP
(1)
------------dT
(2)
Mounted on 1" square PCB
1
tot
J
thermal runaway condition for a diode on its own heatsink
--------------<
R
thJA
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
2 Revision: 02-Jul-08
(1)
T
, T
- 55 to 150 °C
J
Stg
(2)
R
thJL
DC operation 40
°C/W
R
thJA
62
Document Number: 94278
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