VISHAY DG411HS, DG412HS, DG413HS Technical data

DG411HS/412HS/413HS

Vishay Siliconix

Precision Monolithic Quad SPST CMOS Analog Switches

DESCRIPTION

The DG411HS series of monolithic quad analog switches was designed to provide high speed, low error switching of precision analog signals. Combining low power (0.35 µW) with high speed (t suited for portable and battery powered industrial and military applications.

To achieve high-voltage ratings and superior switching performance, the DG411HS series was built on Vishay Siliconix’s high voltage silicon gate process. An epitaxial layer prevents latchup.

Each switch conducts equally well in both directions when on, and blocks input voltages up to the supply levels when off.

The DG411HS and DG412HS respond to opposite control logic as shown in the Truth Table. The DG413HS has two normally open and two normally closed switches.

: 68 ns), the DG411HS family is ideally

ON

FEATURES

• 44 V Supply Max Rating

• ± 15 V Analog Signal Range

• On-Resistance - r

• Fast Switching - t

• Ultra Low Power - P

DS(on)

: 68 ns

ON

D

: 25 Ω

: 0.35 µW

• TTL, CMOS Compatible

• Single Supply Capability

BENEFITS

• Widest Dynamic Range

• Low Signal Errors and Distortion

• Break-Before-Make Switching Action

• Simple Interfacing

APPLICATIONS

• Precision Automatic Test Equipment

• Precision Data Acquisition

• Communication Systems

• Battery Powered Systems

• Computer Peripherals

Pb-free

Available

RoHS*

COMPLIANT

FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION

DG411HS

QFN16

D1IN

16 15 14 13

5

D4IN

IN2D

1

6

7

IN3D

4

Top View

2

S

12

2

V+

11

V

L

10

S

3

9

8

3

Dual-In-Line and SOIC

IN

1

D

2

1

S

3

1

V-

4

5

GND

S

6

4

D

7

4

IN

8

4

DG411HS

Top View

IN

16

2

D

15

2

S

14

2

V+

13

V

12

L

S

11

3

D

10

3

9

IN

3

S

V-

GND

S

1

2

3

4

TRUTH TABLE

Logic DG411HS DG412HS

0ONOFF

1OFFON

* Pb containing terminations are not RoHS compliant, exemptions may apply

DG411HS

LCC

NC IN2D

D1IN

Key

4

S

1

5

V- V+

6

NC NC

7

GND V

8

S

4

1

1231920

910111213

NC IN

D4IN

4

Top View

2

18

17

16

15

14

3D3

S

2

L

S

3

Document Number: 72053 S-71155-Rev. B, 11-Jun-07

www.vishay.com

1

DG411HS/412HS/413HS

Vishay Siliconix

FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION

DG413HS

Dual-In-Line and SOIC

IN

1

D

2

1

3

S

1

V- V+

4

5

GND V

S

6

4

7

D

4

8

IN

4

Top View

16

15

14

13

12

11

10

9

TRUTH TABLE

Logic

0OFFON

1ONOFF

SW

IN

D

2

S

2

L

S

3

D

3

IN

, SW

1

DG413HS

QFN16

IN2D

1

2

3

4

SW2, SW

D1IN

16 15 14 13

6

5

D4IN

Top View

3

2

S

1

V-

GND

S

4

3

4

1

4

7

IN3D

2

S

12

2

V+

11

V

10

L

S

3

9

8

3

Key

4

S

1

5

V- V+

6

NC NC

7

GND V

8

S

4

DG413HS

LCC

D1IN

910111213

D4IN

NC IN2D

1

1231920

NC IN

4

Top View

2

3D3

18

S

2

17

16

15

L

14

S

3

ORDERING INFORMATION

Temp Range Package Part Number

DG411HS/412HS

- 40 to 85 °C

DG413HS

- 40 to 85 °C

DG411HSDJ

16-Pin Plastic DIP

DG411HSDJ-E3

DG412HSDJ

DG412HSDJ-E3

DG411HSDY DG411HSDY-E3 DG411HSDY-T1

16-Pin Narrow SOIC

DG411HSDY-T1-E3

DG412HSDY DG412HSDY-E3 DG412HSDY-T1

DG412HSDY-T1-E3

16-Pin QFN 4 x 4 mm

16-Pin Plastic DIP

DG411HSDN-T1-E4

DG412HSDN-T1-E4

DG413HSDJ DG413HSDJ-E3

DG413HSDY

16-Pin Narrow SOIC

DG413HSDY-E3 DG413HSDY-T1

DG413HSDY-T1-E3

16-Pin QFN 4 x 4 mm DG413HSDN-T1-E4

www.vishay.com 2

Document Number: 72053

S-71155-Rev. B, 11-Jun-07

DG411HS/412HS/413HS

Vishay Siliconix

ABSOLUTE MAXIMUM RATINGS

Parameter Limit Unit

V+ to V- 44

GND to V- 25

V

L

a

Digital Inputs

, VS, V

D

Continuous Current (Any Terminal) 30

Peak Current, S or D (Pulsed 1 ms, 10 % Duty Cycle) 100

Storage Temperature

Power Dissipation (Package)

b

(AK, AZ Suffix) - 65 to 150

(DJ, DY, DN Suffix) - 65 to 125

16-Pin Plastic DIP

16-Pin Narrow SOIC

16-Pin CerDIP

e

LCC-20

16-Pin (4 x 4 mm) QFN

c

d

e

f

Notes: a. Signals on S b. All leads welded or soldered to PC Board.

, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.

X

c. Derate 6 mW/°C above 25 °C. d. Derate 7.6 mW/°C above 75 °C. e. Derate 12 mW/°C above 75 °C. f. Derate 23.5 mW/°C above 70 °C.

(GND - 0.3) to (V+) + 0.3

(V-) - 2 to (V+) + 2

or 30 mA, whichever occurs first

470

600

900

1880

V

mA

°C

mW

SPECIFICATIONSa

Test Conditions

Unless Specified

V+ = 15 V, V- = - 15 V

V

Parameter Symbol

Analog Switch

Analog Signal Range

Drain-Source On-Resistance

Switch Off Leakage Current

Channel On Leakage Current

e

V

ANALOG

r

DS(on)

I

S(off)

I

D(off)

I

D(on)

Digital Control

Input Current, V

Input Capacitance

IN

Low

High

e

I

IL

I

IH

C

IN

Dynamic Characteristics

Tu r n - O n Time

Turn-Off Time

Break-Before-Make Time Delay

Charge Injection

e

t

OFF

ON

t

Q

D

= 5 V, VIN = 2.4 V, 0.8 V

L

V+ = 13.5 V, V- = - 13.5 V

I

= - 10 mA, VD = ± 8.5 V

S

V+ = 16.5 V, V- = - 16.5 V

V

= ± 15.5 mA, VS = ± 15.5 V

D

V+ = 16.5 V, V- = - 16.5 V

V

= VS = ± 15.5 V

D

VIN Under Test = 0.8 V

VIN Under Test = 2.4 V

f = 1 MHz Room 5 pF

RL = 300 Ω, CL = 35 pF

= ± 10 V, See Figure 2

V

S

DG413HS Only, VS = 10 V

R

= 300 Ω, CL = 35 pF

L

= 0 V, Rg = 0 Ω, CL = 10 nF

V

g

f

Tem pb Typ

c

A Suffix

- 55 to 125 °C

d

MaxdMindMax

D Suffix

- 40 to 85 °C

Full - 15 15 - 15 15 V

Room

Full

Room

Full

Room

Full

Room

Full

25 35

± 0.1 - 0.25

- 20

± 0.1 - 0.25

- 20

± 0.1 - 0.4

- 40

45

0.2520- 0.25

- 5

0.2520- 0.25

- 5

0.440- 0.4

- 10

Full 0.005 - 0.5 0.5 - 0.5 0.5

Room

Full

Room

Full

68 105

127

42 80

94

Room 20

Room 22 pC

35 45

0.25 5

0.4 10

105 116

80 90

d

Unit Min

Ω

nA

µA

ns

Document Number: 72053 S-71155-Rev. B, 11-Jun-07

www.vishay.com

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