Vishay DG408DJ, DG408DQ, DG408DY, DG409DJ, DG409DQ Schematics

DG408, DG409

S

3

A

0

S

6

D

S

4

A

1

S

8

S

7

EN

Dual-In-Line,

SOIC and TSSOP

A

2

V- GND

S

1

V+

S

2

S

5

Decoders/Drivers

1

2

3

4

5

6

7

16

15

14

13

12

11

10

Top View

89

DG408

Dual-In-Line,

SOIC and TSSOP

9

A

0

D

a

A

1

D

b

EN GND

V- V+

S

1a

S

1b

S

2a

S

2b

S

3a

S

3b

S

4a

S

4b

Decoders/Drivers

1

2

3

4

5

6

7

16

15

14

13

12

11

10

Top View

8

DG409

www.vishay.com

Vishay Siliconix

8-Ch/Dual 4-Ch High-Performance CMOS Analog Multiplexers

DESCRIPTION

The DG408 is an 8 channel single-ended analog multiplexer
designed to connect one of eight inputs to a common output
as determined by a 3-bit binary address (A0, A1, A2). The
DG409 is a dual 4 channel differential analog multiplexer
designed to connect one of four differential inputs to a
common dual output as determined by its 2-bit binary
address (A
protects against momentary crosstalk between adjacent
channels.

An on channel conducts current equally well in both
directions. In the off state each channel blocks voltages up
to the power supply rails. An enable (EN) function allows the
user to reset the multiplexer/demultiplexer to all switches off
for stacking several devices. All control inputs, address (A
and enable (EN) are TTL compatible over the full specified
operating temperature range.

Applications for the DG408, DG409 include high speed data
acquisition, audio signal switching and routing, ATE
systems, and avionics. High performance and low power
dissipation make them ideal for battery operated and
remote instrumentation applications.

Designed in the 44 V silicon-gate CMOS process, the
absolute maximum voltage rating is extended to 44 V.
Additionally, single supply operation is also allowed. An
epitaxial layer prevents latchup.

For additional information please see Technical Article
TA201.

, A1). Break-before-make switching action

0

)

x

FEATURES

• Low on-resistance - R

• Low charge injection - Q: 20 pC

• Fast transition time - t

• Low power - I

SUPPLY

• Single supply capability

• 44 V supply max. rating

• TTL compatible logic

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

Note

*

Thi s datasheet pro vi des information about parts that are
RoHS-compliant and/or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information/tables in this datasheet for details.

DS(on)

TRANS

: 10 μA

: 100 

: 160 ns

Available

Available

BENEFITS

• Reduced switching errors

• Reduced glitching

• Improved data throughput

• Reduced power consumption

• Increased ruggedness

• Wide supply ranges

- Single supply: +5 V to 36 V

- Dual supplies: ± 5 V to ± 20 V

APPLICATIONS

• Data acquisition systems

• Audio signal routing

• ATE systems

• Battery powered systems

• Single supply systems

• Medical instrumentation





FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION

S13-2504-Rev. K, 16-Dec-13

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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1

Document Number: 70062

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DG408, DG409

Vishay Siliconix

TRUTH TABLE (DG408)

A

2

XXX0None

0001 1

0011 2

0101 3

0111 4

1001 5

1011 6

1101 7

1111 8

A

1

A

0

EN ON SWITCH

TRUTH TABLE (DG409)

A

1

XX0None

0011

0112

1013

1114

Notes

• Logic “0” = V

• Logic “1” = V

•X = Do not care

 0.8 V

AL

 2.4 V

AH

A

0

EN ON SWITCH

ORDERING INFORMATION (Commercial)

PART CONFIGURATION TEMP. RANGE PACKAGE ORDERING PART NUMBER

16-pin plastic DIP

DG408 8:1 x 1 -40 °C to 85 °C

16-pin SOIC

16-pin TSSOP

16-pin plastic DIP

DG409 4:1 x 2 -40 °C to 85 °C

16-pin SOIC

16-pin TSSOP

Note

• -T1 indicates Tape and Reel, -E3 indicates Lead-Free and RoHS Compliant, NO -E3 indicates standard Tin/Lead finish.

DG408DJ

DG408DJ-E3

DG408DY

DG408DY-E3

DG408DY-T1

DG408DY-T1-E3

DG408DQ-E3

DG408DQ-T1-E3

DG409DJ

DG409DJ-E3

DG409DY

DG409DY-E3

DG409DY-T1

DG409DY-T1-E3

DG409DQ-E3

DG409DQ-T1-E3

ABSOLUTE MAXIMUM RATINGS

PARAMETER LIMIT UNIT

Voltages Referenced to V-

a

Digital Inputs

, VS, V

D

Current (any terminal) 30

Peak Current, S or D (pulsed at 1 ms, 10 % duty cycle max.) 100

Storage Temperature (DJ, DY suffix) -65 to 125 °C

Power Dissipation (Package)

b

Notes

a. Signals on S

, DX or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.

X

b. All leads soldered or welded to PC board.
c. Derate 6 mW/°C above 75 °C.
d. Derate 7.6 mW/°C above 75 °C.
e. Also applies when V- = GND.

S13-2504-Rev. K, 16-Dec-13

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e

V+ to V-

44

GND to V- -25

(V-) - 2 to (V+) + 2

or 20 mA, whichever occurs first

16-pin plastic DIP

16-pin narrow SOIC and TSSOP

c

d

450

600

2

Document Number: 70062

V

mA

mW

www.vishay.com

DG408, DG409

Vishay Siliconix

SPECIFICATIONS

a

TEST CONDITIONS UNLESS

OTHERWISE SPECIFIED

D SUFFIX

-40 °C to 85 °C

V+ = 15 V, V- = -15 V

PARAMETER SYMBOL

VAL = 0.8 V, VAH = 2.4 V

f

TEMP.

b

TYP.

c

MIN.

d

MAX.

d

UNIT

Analog Switch

Analog Signal Range

Drain-Source
On-Resistance

R

Matching Between

DS(on)

Channels

g

Source Off Leakage Current I

DG408

DG408 Full - -20 20

DG409 Room - -1 1

Drain Off Leakage
Current

DG409 Full - -10 10

DG408

DG408 Full - -20 20

DG409 Room - -1 1

Drain On Leakage
Current

e

V

ANALOG

R

DS(on)

R

DS(on)

S(off)

Full - -15 15 V

VD = ± 10 V, IS = -10 mA

Room 40 - 100

Full - - 125

VD = ± 10 V Room - - 15

= ± 10 V,

V

S

V

= ± 10 V, VEN = 0 V

D

Room - -0.5 0.5

Full - -5 5

Room - -1 1

= ± 10 V,

V

I

D(off)

D

V

= ± 10 V,

S

V

= 0 V

EN

nA

Room - -1 1

= VD = ± 10 V

V

I

D(on)

S

sequence each

switch on

DG409 Full - -10 10

Digital Control

Logic High Input Voltage V

Logic Low Input Voltage V

Logic High Input Current I

Logic Low Input Current I

Logic Input Capacitance C

INH

INL

AH

AL

f = 1 MHz Room 8 - - pF

in

VA = 2.4 V, 15 V Full - -10 10

VEN = 0 V, 2.4 V, VA = 0 V Full - -10 10

Full - 2.4 -

Full - - 0.8

μA

Dynamic Characteristics

Transition Time t

Break-Before-Make Interval t

Enable Turn-On Time t

Enable Turn-Off Time t

Charge Injection Q C

Off Isolation

h

Source Off Capacitance C

DG408

DG409 Room 14 - -

DG408

DG409 Room 25 - -

Drain Off
Capacitance

Drain On
Capacitance

see figure 2 Full 160 - 250

TRANS

OPEN

ON(EN)

OFF(EN)

OIRR

S(off)

C

D(off)

C

D(on)

see figure 4 Room - 10 -

Room 115 - 150

see figure 3

Full - - -

Room 105 - 150

= 10 nF, VS = 0 V Room 20 - - pC

L

= 0 V, RL = 1 k,

V

EN

f = 1 MHz

VEN = 0 V, VS = 0 V,

f = 1 MHz

Room -75 - -

Room 3 - -

Room 26 - -

= 0 V,

V

EN

V

= 0 V,

D

f = 1 MHz

Room 37 - -

ns

pF

Power Supplies

Positive Supply Current I+

Negative Supply Current I- Full 1 -75 -

Positive Supply Current I+

= VA = 0 V or 5 V

V

EN

= VA = 0 V or 5 V

V

EN

Full 10 - 75

Room 0.2 - 0.5

Full - - 2

μA

mA

Negative Supply Current I- Full - -500 - μA



V

S13-2504-Rev. K, 16-Dec-13

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DG408, DG409

www.vishay.com

SPECIFICATIONSa (Single Supply)

TEST CONDITIONS UNLESS

OTHERWISE SPECIFIED

V+ = 12 V, V- = 0 V

PARAMETER SYMBOL

VAL = 0.8 V, VAH = 2.4 V

f

TEMP.

b

Analog Switch

Drain-Source
On-Resistance

e,f

R

DS(on)

VD = 3 V, 10 V, IS = -1 mA Room 90 - - 

Dynamic Characteristics

Switching Time of
Multiplexer

e

Enable Turn-On Time

Enable Turn-Off Time

Charge Injection

e

e

e

t

VS1 = 8 V, VS8 = 0 V, VIN = 2.4 V Room 180 - -

TRANS

V

t

ON(EN)

t

OFF(EN)

QC

= 1 nF, VS = 0 V, RS = 0 Room 5 - - pC

L

= 2.4 V, V

INH

V

S1

= 5 V

INL

= 0 V,

Room 180 - -

Room 120 - -

Notes

a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
e. Guaranteed by design, not subject to production test.

= input voltage to perform proper function.

f. V

IN

g. R

DS(on)

= R

DS(on)

max. - R

DS(on)

min.

h. Worst case isolation occurs on channel 4 due to proximity to the drain pin.





Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

TYP.

c

Vishay Siliconix

D SUFFIX

-40 °C to 85 °C

MIN.

d

MAX.

d

UNIT

ns

S13-2504-Rev. K, 16-Dec-13

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(pF) C

S, D

V

AN AL O G

- Analog Voltage (V)

0 15 - 15

0

20

40

80

60

V+ = 15 V
V- = - 15 V

C

D( of f)

C

S( o f f )

- 10 - 5 5 1 0

C

D( on)

I

S

V

AN AL O G

- Analog Voltage (V)

(pA)

I

D

12 0 10 6 2 4 8

- 60

- 40

- 20

60

40

0

20

DG408 I

D( of f)

DG409 I

D( of f)

DG409 I

D( on)

DG408 I

D( on)

V S = 0 V for I

D( of f)

V S = V D for I

D( on)

S

Switching Frequency (Hz)

10K 10M1 0 0 1K 100K 1M

V

SU PPL Y

= ± 15 V

- 100 mA

- 1 mA

- 100 µA

- 10 µA

- 1 µA

- 0.1 µA

- 10 mA

V

EN

= 2.4 V

V

EN

= 0 V or 5 V

I-

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

DG408, DG409

Vishay Siliconix

Source/Drain Capacitance vs. Analog Voltage

(pA)

D

100

- 20

- 60

- 100

- 140

60

20

V+ = 15 V
V- = - 15 V

= - VD for I

V

S

V D = V

- 10 - 5 5 1 0
V D or V

D(off)

for I

S ( open)

DG409 I

D( on)

D( of f)

DG409 I

DG408 I

D( on)

, I

D( of f)

0 15 - 15

- Drain or Source V oltage (V)

D( on)

Drain Leakage Current vs. Source/Drain Voltage

2.0

1.5

Drain Leakage Current vs. Source/Drain Voltage

(Single 12 V Supply)

20

15

V+ = 15 V
V- = - 15 V

(pA)

S(off)

I

10

5

0

V+ = 12 V

- 5

V- = 0 V

- 10

- 10 - 5 5 1 0
V

0 15 - 15

- Source V oltage (V)

Source Leakage Current vs. Source Voltage

(V)

1.0

TH

V

0.5

0.0

Input Switching Threshold vs. Supply Voltage

S13-2504-Rev. K, 16-Dec-13

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

12 2048 16

+ V

(V)

SUPPLY

Negative Supply Current vs. Switching Frequency

5

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Switching Frequency (Hz)

10K 10M1 0 0 1K 100K 1 M

V

SU PPL Y

= 15 V

100 mA

10 mA

1 mA

100 µA

10 µA

V

EN

= 2.4 V

V

EN

= 0 V or 5 V

I+

I+ (µA)

Temperature (°C)

5

15

20

10

125- 55 85 45 5

0

V+ = 15 V
V- = - 15 V
V

IN

= 0 V

V

EN

= 0 V

- 35 - 15 25 65 105

R

DS(on)

(Ω)

V D - Drain V oltage (V)

0

40

100

60

80

120

20

- 20 - 12 - 8 - 4 0 4 8 1 2 1 6 2 0 - 16

± 5 V

± 8 V

± 10 V

± 12 V

± 20 V

± 15 V

VD - Drain Voltage (V)

220

0

40

100

60

140

160

80

120

20

4 8 12 16 20

V+ = 7.5 V

10 V

12 V

15 V

20 V

22 V

V- = 0 V

R

DS(on)

(Ω)

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

DG408, DG409

Vishay Siliconix

100 µA

Positive Supply Current vs. Switching Frequency

I+, I-

Q (pC)

10 µA

1 µA

100 nA

10 nA

1 nA

100 pA

10 pA

90

80

70

60

50

40

30

20

10

0

- 10

I+

- (I-)

- 35 - 15 25 65 105

Temperature (°C)

I

vs. Temperature

SUPPLY

C L = 10 000 pF

= 5 Vp-p

V

IN

V+ = 15 V
V- = - 15 V

- 10 - 5 5 1 0

V S - Source V oltage (V)

V

= ± 15 V

SU PPL Y

V

= 0 V

A

V

= 0 V

EN

V+ = 12 V
V- = 0 V

0 15- 15

125 - 55 85 45 5

Positive Supply Current vs. Temperature (DG408)

S13-2504-Rev. K, 16-Dec-13

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

R

DS(on)

Charge Injection vs. Analog Voltage

vs. VD and Supply

vs. VD and Supply (Single Supply)

R

DS(on)

6

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Document Number: 70062