D Low Voltage Operation (1.8 V to 5.5 V)
D Low On-Resistance - r
DS(on
): 3.0 W
D Fast Switching - 12 ns
D Low Charge Injection - Q
: 10 pC
INJ
D Low Power Consumption
D TTL/CMOS Compatible
D SOT23-8 and MSOP-8 Packages
DESCRIPTION
The DG2037/2038/2039 are dual single-pole/single-throw
monolithic CMOS analog switch designed for high
performance switching of analog signals. Combining low
power, fast switching, low on-resistance (r
3.0 W @ 2.7 V) and small physical size, the
DG2037/2038/2039 are ideal for portable and battery powered
applications requiring high performance and efficient use of
board space.
BENEFITS
D Reduced Power Consumption
D Simple Logic Interface
D High Accuracy
D Reduce Board Space
DS(on)
Vishay Siliconix
APPLICATIONS
D Cellular Phones
D Communication Systems
D Portable Test Equipment
D Battery Operated Systems
D Sample and Hold Circuits
The DG2037/2038/2039 are built on Vishay Siliconix’s new
high density low voltage process. An epitaxial layer prevents
latchup.
:
Each switch conducts equally well in both directions when on,
and blocks up to the power supply level when off.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATIONDG2037
DG2037, MSOP-8
NO
1
1
COM
1
2
IN
2
3
GNDNO
4
Top View
Device Marking: 2037Device Marking: E0
8
7
6
5
V+
IN
1
COM
2
2
TRUTH TABLE DG2037
LogicSwitch
0Off
1On
IN
V+
NO
COM
DG2037. SOT23-8
1
1
2
2
3
2
4
Top View
NO
1
8
COM
IN
2
GND
1
7
6
5
Document Number: 72359
S-31642—Rev. A, 01-Aug-03
www.vishay.com
1
DG2037/2038/2039
Vishay Siliconix
New Product
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATIONDG2038/DG2039
Power Supply RangeV+2.73.3V
Power Supply CurrentI+
Power ConsumptionP
Document Number: 72359
S-31642—Rev. A, 01-Aug-03
INH
INL
C
or I
INL
ON
OFF
Q
OIRR
X
TALK
C
NC/NO(off)
C
COM(off)
C
ON
INJ
Full1.5
Full0.4
in
INH
VNO or VNC = 2.0 V, RL = 300 W, CL = 35 pF
CL = 1 nF, V
RL = 50 W, CL = 5 pF, f = 1 MHz
f = 1 MHzFull8pF
VIN = 0 or V+Full-11
Figure 1 and 2
= 0 V, R
GEN
= 0 W, Figure 3
GEN
Room
Full
Room
Full
Room1pC
2235
40
1731
35
Room-61
Room-67
V
mA
ns
dB
Room17
VIN = 0 or V+, f = 1 MHz
Room19
pF
Room35
C
VIN = 0 or V+
0.021.0
3.3
mA
mW
www.vishay.com
3
DG2037/2038/2039
f
V+ = 5.5 V
VNO or VNC = 3 V, RL = 300 W, CL = 35 pF
IN
p
Vishay Siliconix
New Product
SPECIFICATIONS (V+ = 5.0 V)
Test Conditions
Otherwise Unless Specified
ParameterSymbol
V+ = 5 V, "10%, VIN = 0.8 or 2.4 V
e
Temp
a
Min
Analog Switch
Analog Signal Range
d
On-Resistancer
Flatness
Match
d
d
r
ON
r
ON
Switch Off Leakage Current
Channel-On Leakage Current
f
VNO, VNC,
V
COM
ON
r
ON
Flatness
V+ = 4.5 V, V
V+ = 4.5 V, V
= 2.5 V, INO, INC = 10 mA
COM
= 2.5 to V+, INO, INC = 10 mARoom0.4
COM
rON MatchV+ = 4.5 V, ID = 10 mA, V
I
NO(off),
I
NC(off)
I
COM(off)
I
COM(on)
V
NO,
V
V+ = 5.5 V
VNC = 1 V/4.5 V, V
V+ = 5.5 V
VNC = V
NO,
COM
COM
= 1 V/4.5 V
Full0V+V
Room
Full
= 2.5 VRoom0.2
COM
Room
Full
= 4.5 V/1 V
Room
Full
Room
Full
Digital Control
Input High VoltageV
Input Low VoltageV
Input CapacitanceC
Input CurrentI
INL
INH
INL
or I
in
INH
f = 1 MHzFull8pF
VIN = 0 or V+Full-11
Full2.4
Full0.8
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Charge Injection
Off-Isolation
Crosstalk
d
d
d
d
d
Source-Off Capacitance
Drain-Off Capacitance
d
Channel-On Capacitance
t
ON
t
OFF
Q
INJ
OIRR
X
d
d
TALK
C
NC/NO(off)
C
COM(off)
C
ON
VNO or VNC = 3 V, RL = 300 W, CL = 35 pF
Figure 1 and 2
CL = 1 nF, V
GEN
= 0 V, R
= 0 W, Figure 3
GEN
RL = 50 W, CL = 5 pF, f = 1 MHz
VIN = 0 or V+, f = 1 MHz
Room
Full
Room
Full
Room1pC
Room-61
Room-67
Room15
Room17
Room35
Power Supply
Power Supply RangeV+4.55.5V
Power Supply CurrentI+
Power ConsumptionP
C
Notes:
a. Room = 25°C, Full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, nor subjected to production test.
= input voltage to perform proper function.
e. V
IN
f.Not production tested.
VIN = 0 or V+
-1
-10
-1
10
-1
-10
-40 to 85_C
b
Limits
c
Typ
2.5
1.6
1930
1222
0.021.0
MaxbUnit
5
6
1
10
1
10
1
10
35
30
5.5
W
nA
V
mA
ns
dB
pF
mA
mW
www.vishay.com
4
Document Number: 72359
S-31642—Rev. A, 01-Aug-03
DG2037/2038/2039
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
8
7
W )
6
5
4
3
- On-Resistance (
ON
r
2
1
0
012345
10,000
1000
V+ = 5 V
V
rON vs. V
V
COM
Supply Current vs. Temperature
= 0 V
IN
Supply Voltage
COM
V+ = 1.8 V
V+ = 2.7 V
- Analog Voltage (V)
V+ = 3.3 V
V+ = 5.5 V
W )
- On-Resistance (
ON
r
100 mA
Vishay Siliconix
rON vs. Analog Voltage and Temperature
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0123456
Supply Current vs. Input Switching Frequency
10 mA
1 mA
V+ = 5 V
V+ = 2.7 V
85_C
25_C
-40_C
V
- Analog Voltage (V)
COM
V+ = 5.5 V
85_C
25_C
-40_C
100
I+ - Supply Current (nA)
10
1
-40-20020406080100
Temperature (_C)
Leakage Current vs. TemperatureLeakage vs. Analog Voltage