VISHAY BYV28-600 User Manual

Ultra Fast Avalanche Sinterglass Diode

Features

• Glass passivated

• Hermetically sealed axial-leaded glass
envelope

• Low reverse current

• Ultra fast soft recovery switching

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

Applications

TV
SMPS
Power feedback systems

e2

Mechanical Data

Case: SOD-64 Sintered glass case
Terminals: Plated axial leads, solderable per

MIL-STD-750, Method 2026

Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: approx. 858 mg

BYV28-600

Vishay Semiconductors

949588

Parts Table

Part Type differentiation Package

BYV28-600 V

= 600 V; I

R

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Symbol Val ue Unit

Reverse voltage = Repetitive
peak reverse voltage

Peak forward surge current t

Average forward current T

Non-repetitive reverse
avalanche energy

Junction and storage
temperature range

see electrical characteristics V

= 10 ms, half-sinewave I

p

= 25 °C, l = 10 mm I

amb

Inductive load, I

(BR)R

Maximum Thermal Resistance

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Symbol Val ue Unit

Junction ambient Lead length l = 10 mm,

= constant

T

L

on PC board with spacing
25 mm

= 3.5 A SOD-64

FAV

= V

R

RRM

FSM

FAV

= 1 A E

T

= T

j

R

R

R

stg

thJA

thJA

600 V

90 A

3.5 A

20 mJ

- 55 to + 175 °C

25 K/W

70 K/W

Document Number 86043

Rev. 1.5, 14-Apr-05

www.vishay.com

1

BYV28-600

Vishay Semiconductors

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Symbol Min Ty p. Max Unit

Forward voltage I

Reverse current V

Reverse breakdown voltage I

Reverse recovery time I

Forward recovery I

Forward recovery time I

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

= 3.5 A V

F

I

= 5 A V

F

I

= 3.5 A, Tj = 175 °C V

F

I

= 5 A, Tj = 175 °C V

F

= V

R

RRM

V

= V

R

= 100 µAV

R

= 0.5 A, IR = 1 A, iR = 0.25 A t

F

= 5 A V

F

= 5 A t

F

, Tj = 150 °C I

RRM

F

F

F

F

I

R

R

(BR)R

rr

FP

fr

600 V

6.2 V

210 ns

1.25 V

1.35 V

0.95 V

1.06 V

5 µA

150 µA

50 ns

300

250

200

150

100

50

R

0

P – Reverse Power Dissipation ( mW )

25 50 75 100 125 150 175

14365

R

thJA

25 K/W

70 K/W

Tj– Junction Temperature ( °C )

=

PR–Limit

@80%V

VR=V

PR–Limit

@100 % V

R

RRM

R

Figure 1. Max. Reverse Power Dissipation vs. Junction

Temperature

1000

1000

VR=V

RRM

100

100

10

10

R

I – Reverse Current (A)

4.0

3.5

3.0

2.5

2.0

1.5

1.0

≤

R

70 K/W

thJA

0.5

14364

FAV

I –Average Forward Current( A )

PCB:d=25mm

0.0
0 20 40 60 80 100 120 140 160 180

T

– Ambient Temperature (°C )

amb

VR=V

RRM

half sinewave

≤

R

25 K/W

thJA

l=10mm

Figure 3. Max. Average Forward Current vs. Ambient Temperature

100

Tj= 175 °C

10

1

0.1

0.01

F

I – Forward Current (A )

Tj=25°C

1

1

25 50 75 100 125 150 175

25 50 75 100 125 150 175

14366

Tj– Junction Temperature (°C )

Figure 2. Max. Reverse Current vs. Junction Temperature

www.vishay.com

2

0.001

0.0 0.5 1.0 1.5 2.0 2.5 3.0

14363

VF– Forward Voltage(V)

Figure 4. Max. Forward Current vs. Forward Voltage

Document Number 86043

Rev. 1.5, 14-Apr-05