
Ultra Fast Avalanche Sinterglass Diode
Features
• Glass passivated
• Hermetically sealed axial-leaded glass
envelope
• Low reverse current
• Ultra fast soft recovery switching
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
TV
SMPS
Power feedback systems
e2
Mechanical Data
Case: SOD-64 Sintered glass case
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: approx. 858 mg
BYV28-600
Vishay Semiconductors
949588
Parts Table
Part Type differentiation Package
BYV28-600 V
= 600 V; I
R
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Val ue Unit
Reverse voltage = Repetitive
peak reverse voltage
Peak forward surge current t
Average forward current T
Non-repetitive reverse
avalanche energy
Junction and storage
temperature range
see electrical characteristics V
= 10 ms, half-sinewave I
p
= 25 °C, l = 10 mm I
amb
Inductive load, I
(BR)R
Maximum Thermal Resistance
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Val ue Unit
Junction ambient Lead length l = 10 mm,
= constant
T
L
on PC board with spacing
25 mm
= 3.5 A SOD-64
FAV
= V
R
RRM
FSM
FAV
= 1 A E
T
= T
j
R
R
R
stg
thJA
thJA
600 V
90 A
3.5 A
20 mJ
- 55 to + 175 °C
25 K/W
70 K/W
Document Number 86043
Rev. 1.5, 14-Apr-05
www.vishay.com
1

BYV28-600
Vishay Semiconductors
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage I
Reverse current V
Reverse breakdown voltage I
Reverse recovery time I
Forward recovery I
Forward recovery time I
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
= 3.5 A V
F
I
= 5 A V
F
I
= 3.5 A, Tj = 175 °C V
F
I
= 5 A, Tj = 175 °C V
F
= V
R
RRM
V
= V
R
= 100 µAV
R
= 0.5 A, IR = 1 A, iR = 0.25 A t
F
= 5 A V
F
= 5 A t
F
, Tj = 150 °C I
RRM
F
F
F
F
I
R
R
(BR)R
rr
FP
fr
600 V
6.2 V
210 ns
1.25 V
1.35 V
0.95 V
1.06 V
5 µA
150 µA
50 ns
300
250
200
150
100
50
R
0
P – Reverse Power Dissipation ( mW )
25 50 75 100 125 150 175
14365
R
thJA
25 K/W
70 K/W
Tj– Junction Temperature ( °C )
=
PR–Limit
@80%V
VR=V
PR–Limit
@100 % V
R
RRM
R
Figure 1. Max. Reverse Power Dissipation vs. Junction
Temperature
1000
1000
VR=V
RRM
100
100
10
10
R
I – Reverse Current (A)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
≤
R
70 K/W
thJA
0.5
14364
FAV
I –Average Forward Current( A )
PCB:d=25mm
0.0
0 20 40 60 80 100 120 140 160 180
T
– Ambient Temperature (°C )
amb
VR=V
RRM
half sinewave
≤
R
25 K/W
thJA
l=10mm
Figure 3. Max. Average Forward Current vs. Ambient Temperature
100
Tj= 175 °C
10
1
0.1
0.01
F
I – Forward Current (A )
Tj=25°C
1
1
25 50 75 100 125 150 175
25 50 75 100 125 150 175
14366
Tj– Junction Temperature (°C )
Figure 2. Max. Reverse Current vs. Junction Temperature
www.vishay.com
2
0.001
0.0 0.5 1.0 1.5 2.0 2.5 3.0
14363
VF– Forward Voltage(V)
Figure 4. Max. Forward Current vs. Forward Voltage
Document Number 86043
Rev. 1.5, 14-Apr-05

160
140
120
100
80
60
40
D
C – Diode Capacitance ( pF )
20
0
0.1 1.0 10.0 100.0
14367
VR– Reverse Voltage(V)
f=1MHz
Figure 5. Typ. Diode Capacitance vs. Reverse Voltage
Package Dimensions in mm (Inches)
BYV28-600
Vishay Semiconductors
Sintered Glass Case
SOD-64
26(1.014) min. 26 (1.014) min.
CathodeIdentification
4.0 (0.156) max.
4.3 (0.168) max.
ISO Method E
1.35 (0.053) max.
94 9587
Document Number 86043
Rev. 1.5, 14-Apr-05
www.vishay.com
3

BYV28-600
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com
4
Document Number 86043
Rev. 1.5, 14-Apr-05

Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
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