VISHAY BYV 27-150 TEL Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

handbook, 2 columns

M3D116

BYV27 series

Ultra fast low-loss
controlled avalanche rectifiers

Product specification
Supersedes data of 1996 Oct 02

1997 Nov 24

Philips Semiconductors Product specification

Ultra fast low-loss

BYV27 series

controlled avalanche rectifiers

FEATURES

• Glass passivated

• High maximum operating

temperature

DESCRIPTION

Rugged glass SOD57 package, using
a high temperature alloyed
construction.

• Low leakage current

• Excellent stability

ka

• Guaranteed avalanche energy

2/3 page (Datasheet)

absorption capability

• Available in ammo-pack.
Fig.1 Simplified outline (SOD57) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

RRM

repetitive peak reverse voltage

BYV27-50 − 50 V
BYV27-100 − 100 V
BYV27-150 − 150 V
BYV27-200 − 200 V
BYV27-300 − 300 V
BYV27-400 − 400 V
BYV27-500 − 500 V
BYV27-600 − 600 V

V

R

continuous reverse voltage

BYV27-50 − 50 V
BYV27-100 − 100 V
BYV27-150 − 150 V
BYV27-200 − 200 V
BYV27-300 − 300 V
BYV27-400 − 400 V
BYV27-500 − 500 V
BYV27-600 − 600 V

I

F(AV)

average forward current Ttp=85°C; lead length = 10 mm;

BYV27-50 to 200 − 2.0 A
BYV27-300 and 400 − 1.9 A

see Figs 2, 3 and 4;
averaged over any 20 ms period;
see also Figs 14, 15 and 16

BYV27-500 and 600 − 1.6 A

I

F(AV)

average forward current T

BYV27-50 to 200 − 1.30 A
BYV27-300 and 400 − 1.25 A
BYV27-500 and 600 − 1.10 A

=60°C; printed-circuit board

amb

mounting (see Fig. 25);
see Figs 5, 6 and 7;
averaged over any 20 ms period;
see also Figs 14, 15 and 16

This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.

MAM047

1997 Nov 24 2

Philips Semiconductors Product specification

Ultra fast low-loss

BYV27 series

controlled avalanche rectifiers

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

FRM

I

FRM

I

FSM

E

RSM

T

stg

T

j

ELECTRICAL CHARACTERISTICS

=25°C unless otherwise specified.

T

j

repetitive peak forward current Ttp=85°C; see Figs 8, 9 and 10

BYV27-50 to 400 − 20 A
BYV27-500 and 600 − 16 A

repetitive peak forward current T

BYV27-50 to 200 − 14 A

=60°C;

amb

see Figs 11, 12 and 13

BYV27-300 and 400 − 13 A
BYV27-500 and 600 − 11 A

non-repetitive peak forward current t = 10 ms half sine wave;

BYV27-50 to 400 − 50 A
BYV27-500 and 600 − 40 A

non-repetitive peak reverse
avalanche energy

Tj=T
VR=V

L = 120 mH; Tj=T
surge; inductive load switched off

prior to surge;

j max

RRMmax

j max

prior to

− 20 mJ

storage temperature −65 +175 °C
junction temperature see Fig. 17 −65 +175 °C

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

F

forward voltage IF= 2 A; Tj=T

BYV27-50 to 200 −−0.78 V

see Figs 18, 19 and 20

j max

;

BYV27-300 and 400 −−0.82 V
BYV27-500 and 600 −−1.00 V

V

F

forward voltage IF=2A;

BYV27-50 to 200 −−0.98 V

see Figs 18, 19 and 20

BYV27-300 and 400 −−1.05 V
BYV27-500 and 600 −−1.25 V

V

(BR)R

reverse avalanche breakdown

IR= 0.1 mA

voltage

BYV27-50 55 −−V
BYV27-100 110 −−V
BYV27-150 165 −−V
BYV27-200 220 −−V
BYV27-300 330 −−V
BYV27-400 440 −−V
BYV27-500 560 −−V
BYV27-600 675 −−V

I

R

reverse current VR=V

RRMmax

;

−− 5µA

see Fig. 21
V

R=VRRMmax

;

−−150 µA

Tj= 165 °C; see Fig. 21

1997 Nov 24 3

Philips Semiconductors Product specification

Ultra fast low-loss

BYV27 series

controlled avalanche rectifiers

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

t

rr

C

d

dI

R

-------­dt

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-tp

R

th j-a

reverse recovery time when switched from

BYV27-50 to 200 −−25 ns
BYV27-300 to 600 −−50 ns

diode capacitance f = 1 MHz; VR=0;

BYV27-50 to 200 − 100 − pF
BYV27-300 and 400 − 80 − pF
BYV27-500 and 600 − 65 − pF

maximum slope of reverse recovery
current

thermal resistance from junction to tie-point lead length = 10 mm 46 K/W
thermal resistance from junction to ambient note 1 100 K/W

IF= 0.5 A to IR=1A;
measured at IR= 0.25 A;
see Fig. 27

see Figs 22, 23 and 24

when switched from
I

= 1 A to VR≥ 30 V

F

and dIF/dt = −1A/µs;
see Fig. 26

−− 4A/µs

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig. 25.
For more information please refer to the

“General Part of associated Handbook”

.

1997 Nov 24 4

Philips Semiconductors Product specification

Ultra fast low-loss
controlled avalanche rectifiers

GRAPHICAL DATA

2.0

handbook, halfpage

I

F(AV)

(A)

1.6

1.2

0.8

0.4

0

0 200

BYV27-50 to200

a = 1.42; VR=V
Switched mode application.

20 15 10 lead length (mm)

100

; δ = 0.5.

RRMmax

o

T ( C)

tp

MGA849

2.0

handbook, halfpage

I

F(AV)

(A)

1.6

1.2

0.8

0.4

0

0 200

BYV27-300 and 400

a = 1.42; VR=V
Switched mode application.

RRMmax

; δ = 0.5.

BYV27 series

lead length 10 mm

100

o

T ( C)

tp

MLC293

Fig.2 Maximum permissible average forward

current as a function of tie-point temperature
(including losses due to reverse leakage).

handbook, halfpage

3

I

F(AV)

(A)

lead length 10 mm

2

1

0

0 200

BYV27-500 and 600

a = 1.42; VR=V
Switched mode application.

RRMmax

; δ = 0.5.

100

Ttp (°C)

MGK648

Fig.3 Maximum permissible average forward

current as a function of tie-point temperature
(including losses due to reverse leakage).

2.0

handbook, halfpage

I

F(AV)

(A)

1.6

1.2

0.8

0.4

0

0 200

BYV27-50 to 200

a = 1.42; VR=V
Device mounted as shown in Fig. 25.
Switched mode application.

RRMmax

; δ = 0.5.

100

o

T ( C)

amb

MGA848

Fig.4 Maximum permissible average forward

current as a function of tie-point temperature
(including losses due to reverse leakage).

1997 Nov 24 5

Fig.5 Maximum permissible average forward

current as a function of ambient temperature
(including losses due to reverse leakage).

Philips Semiconductors Product specification

Ultra fast low-loss
controlled avalanche rectifiers

1.6

handbook, halfpage

I

F(AV)

(A)

1.2

0.8

0.4

0

0 200

BYV27-300 and 400

a = 1.42; VR=V
Device mounted as shown in Fig. 25.
Switched mode application.

RRMmax

; δ = 0.5.

100

o

T ( C)

amb

MLC294

1.6

handbook, halfpage

I

F(AV)

(A)

1.2

0.8

0.4

0

0 200

BYV27-500 and 600

a = 1.42; VR=V
Device mounted as shown in Fig. 25.
Switched mode application.

RRMmax

; δ = 0.5.

BYV27 series

100

T

amb

(°C)

MGK649

Fig.6 Maximum permissible average forward

current as a function of ambient temperature
(including losses due to reverse leakage).

20

handbook, full pagewidth

I

FRM

(A)

16

12

8

4

0

2

10

BYV27-50 to 200

Ttp=85°C; R
V

RRMmax

th j-tp

during 1 −δ; curves include derating for T

= 46 K/W.

1

10

δ = 0.05

11010

j max

0.1

0.2

0.5

1

at V

RRM

= 200 V.

Fig.7 Maximum permissible average forward

current as a function of ambient temperature
(including losses due to reverse leakage).

MLC297

2103

t (ms)

p

10

4

Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

1997 Nov 24 6

Philips Semiconductors Product specification

Ultra fast low-loss
controlled avalanche rectifiers

20

handbook, full pagewidth

I

FRM

(A)

16

12

8

4

0

2

10

BYV27-300 and 400

Ttp=85°C; R
V

RRMmax

th j-tp

during 1 −δ; curves include derating for T

= 46 K/W.

1

10

δ = 0.05

j max

0.1

0.2

0.5

1

11010

at V

= 400 V.

RRM

2103

BYV27 series

MLC299

4

t (ms)

p

10

Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

20

handbook, full pagewidth

I

FRM

(A)

16

12

8

4

0

−2

10

BYV27-500 and 600

Ttp=85°C; R
V

during 1 −δ; curves include derating for T

RRMmax

th j-tp

= 46 K/W.

−1

δ = 0.05

at V

j max

0.1

0.2

0.5
1

3

10

RRM

= 600 V.

2

10110

10

tp (ms)

MGK650

4

10

Fig.10 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

1997 Nov 24 7

Philips Semiconductors Product specification

Ultra fast low-loss
controlled avalanche rectifiers

16

handbook, full pagewidth

I

FRM

(A)

12

8

4

0

2

10

10

BYV27-50 to 200

T

=60°C; R

amb

V

during 1 −δ; curves include derating for T

RRMmax

th j-a

= 100 K/W.

1

δ = 0.05

j max

0.1

0.2

0.5

1

11010

at V

= 200 V.

RRM

2103

BYV27 series

MLC298

4

t (ms)

p

10

Fig.11 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

16

handbook, full pagewidth

I

FRM

(A)

12

8

4

0

2

10

10

BYV27-300 and 400

T

=60°C; R

amb

V

during 1 −δ; curves include derating for T

RRMmax

th j-a

= 100 K/W.

1

δ = 0.05

0.1

0.2

0.5

1

11010

at V

RRM

= 400 V.

j max

2103

t (ms)

p

MLC300

4

10

Fig.12 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

1997 Nov 24 8

Philips Semiconductors Product specification

Ultra fast low-loss
controlled avalanche rectifiers

20

handbook, full pagewidth

I

FRM

(A)

16

12

δ = 0.05

8

4

0

−2

10

−1

0.1

0.2

0.5

BYV27 series

MGK651

1

2

10110

10

3

10

tp (ms)

4

10

BYV27-500 and 600

T

=60°C; R

amb

V

during 1 −δ; curves include derating for T

RRMmax

th j-a

= 100 K/W.

j max

at V

RRM

= 600 V.

Fig.13 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

2.4

handbook, halfpage

P

(W)

2.0

1.6

1.2

0.8

0.4

0

0

MGA870

a = 3 2.5 2

1.57

1.42

12

I (A)

F(AV)

2.4

handbook, halfpage

P

(W)

2.0

1.6

1.2

0.8

0.4

0

0

a = 3

2.5

12

I (A)

F(AV)

MLC292

2

1.57

1.42

BYV27-50 to 200

a=I

F(RMS)/IF(AV)

; VR=V

RRMmax

; δ = 0.5.

Fig.14 Maximum steady state power dissipation

(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.

1997 Nov 24 9

BYV27-300 and 400

a=I

F(RMS)/IF(AV)

; VR=V

RRMmax

; δ = 0.5.

Fig.15 Maximum steady state power dissipation

(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.

Philips Semiconductors Product specification

Ultra fast low-loss
controlled avalanche rectifiers

2.0

handbook, halfpage

P

(W)

1.6

1.2

0.8

0.4

0

0

BYV27-500 and 600

a=I

F(RMS)/IF(AV)

; VR=V

RRMmax

a = 3

2.5

; δ = 0.5.

Fig.16 Maximum steady state power dissipation

(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.

2

1.57

1.42

12

I

F(AV)

MGK652

(A)

200

handbook, halfpage

T

j

(°C)

100

0

0 100

Solid line = VR.
Dotted line = V

RRM

; δ = 0.5.

50

Fig.17 Maximum permissible junction

temperature as a function of maximum
reverse voltage percentage.

BYV27 series

MGK645

VR (%V

Rmax

)

handbook, halfpage

6

I

F

(A)

4

2

0

02

BYV27-50 to 200

Dotted line: Tj= 175 °C.
Solid line: Tj=25°C.

1

V (V)

F

Fig.18 Forward current as a function of forward

voltage; maximum values.

MGA864

handbook, halfpage

6

I

F

(A)

4

2

0

02

BYV27-300 and 400

Dotted line: Tj= 175 °C.
Solid line: Tj=25°C.

1

V (V)

F

Fig.19 Forward current as a function of forward

voltage; maximum values.

MLC291

1997 Nov 24 10

Philips Semiconductors Product specification

Ultra fast low-loss
controlled avalanche rectifiers

handbook, halfpage

6

I

F

(A)

4

2

0

02

BYV27-500 and 600

Dotted line: Tj= 175 °C.
Solid line: Tj=25°C.

1

V (V)

F

MBH649

3

10

handbook, halfpage

I

R

(µA)

2

10

10

1

0 100 200

VR=V

RRMmax

BYV27 series

MGC550

Tj (°C)

.

Fig.20 Forward current as a function of forward

voltage; maximum values.

2

10

handbook, halfpage

C

d

(pF)

10

1

1

BYV27-50 to 200

f = 1 MHz; Tj=25°C.

10

2

10

V (V)

R

MLC295

Fig.21 Reverse current as a function of junction

temperature; maximum values.

2

10

handbook, halfpage

C

d

(pF)

10

3

10

1

1

BYV27-300 and 400

f = 1 MHz; Tj=25°C.

10

10

MLC296

2

V (V)

R

3

10

Fig.22 Diode capacitance as a function of reverse

voltage; typical values.

1997 Nov 24 11

Fig.23 Diode capacitance as a function of reverse

voltage; typical values.

Philips Semiconductors Product specification

Ultra fast low-loss
controlled avalanche rectifiers

2

10

handbook, halfpage

C

d

(pF)

10

1

1

10

2

10

VR (V)

MGK653

BYV27 series

handbook, halfpage

3

10

50
25

7

50

2

3

MGA200

BYV27-500 and 600

f = 1 MHz; Tj=25°C.

Fig.24 Diode capacitance as a function of reverse

voltage; typical values.

I

dbook, halfpage

F

dI

F

dt

t

rr

dI

R

dt

100%

I

R

10%

Dimensions in mm.

Fig.25 Device mounted on a printed-circuit board.

t

MGC499

Fig.26 Reverse recovery definitions.

1997 Nov 24 12

Philips Semiconductors Product specification

Ultra fast low-loss
controlled avalanche rectifiers

handbook, full pagewidth

10 Ω

25 V

DUT

+

1 Ω

50 Ω

I

(A)

0.25

R

I

(A)

0.5

0.5

1.0

BYV27 series

F

t

rr

0

t

MAM057

Input impedance oscilloscope: 1 MΩ, 22 pF; tr≤ 7 ns.
Source impedance: 50 Ω; tr≤ 15 ns.

Fig.27 Test circuit and reverse recovery time waveform and definition.

1997 Nov 24 13

Philips Semiconductors Product specification

Ultra fast low-loss
controlled avalanche rectifiers

PACKAGE OUTLINE

Hermetically sealed glass package; axial leaded; 2 leads

k

LD L

DIMENSIONS (mm are the original dimensions)

UNIT

mm

Note

1. The marking band indicates the cathode.

b

max.

0.81

OUTLINE
VERSION

SOD57

D

max.Gmax.

IEC JEDEC EIAJ

L

min.

284.573.81

REFERENCES

BYV27 series

SOD57

(1)

a

b

G

0 2.5 5 mm

scale

EUROPEAN

PROJECTION

ISSUE DATE

97-10-14

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 Nov 24 14

Philips Semiconductors Product specification

Ultra fast low-loss
controlled avalanche rectifiers

BYV27 series

NOTES

1997 Nov 24 15

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© Philips Electronics N.V. 1997 SCA56
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Printed in The Netherlands 117027/1200/04/pp16 Date of release: 1997 Nov 24 Document order number: 9397 75002663