VISHAY BYT56 User Manual

Fast Avalanche Sinterglass Diode

Features

• Glass passivated junction

• Hermetically sealed package

• Low reverse current

• Soft recovery characteristics

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

Applications

Very fast rectification and switching diode

e2

Mechanical Data

Case: SOD-64 Sintered glass case
Terminals: Plated axial leads, solderable per

MIL-STD-750, Method 2026

Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: approx. 858 mg

BYT56.

Vishay Semiconductors

949588

Parts Table

Part Type differentiation Package

BYT56A V

BYT56B V

BYT56D V

BYT56G V

BYT56J V

BYT56K V

BYT56M V

= 50 V; I

R

= 100 V; I

R

= 200 V; I

R

= 400 V; I

R

= 600 V; I

R

= 800 V; I

R

= 1000 V; I

R

= 3 A SOD-64

FAV

= 3 A SOD-64

FAV

= 3 A SOD-64

FAV

= 3 A SOD-64

FAV

= 3 A SOD-64

FAV

= 3 A SOD-64

FAV

= 3 A SOD-64

FAV

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Part Symbol Val ue Unit

Reverse voltage = Repetitive
peak reverse voltage

Peak forward surge current t

Average forward current on PC board I

Junction and storage
temperature range

Non repetitive reverse
avalanche energy

see electrical characteristics BYT56A V

BYT56B V

BYT56D V

BYT56G V

BYT56J V

BYT56K V

BYT56M V

= 10 ms, half sinewave I

p

l = 10 mm I

= 0.4 A E

I

(BR)R

R

R

R

R

R

R

R

T

= V

= V

= V

= V

= V

= V

= V

FSM

FAV

FAV

= T

j

R

RRM

RRM

RRM

RRM

RRM

RRM

RRM

stg

50 V

100 V

200 V

400 V

600 V

800 V

1000 V

80 A

1.5 A

3A

- 55 to + 175 °C

10 mJ

Document Number 86032

Rev. 1.6, 13-Apr-05

www.vishay.com

1

BYT56.

Vishay Semiconductors

Maximum Thermal Resistance

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Symbol Valu e Unit

Junction ambient l = 10 mm, T

on PC board with spacing
25 mm

= constant R

L

thJA

R

thJA

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Symbol Min Ty p. Max Unit

Forward voltage I

Reverse current V

Reverse recovery time I

= 3 A V

F

= V

R

RRM

V

= V

R

= 0.5 A, IR = 1 A, iR = 0.25 A t

F

, Tj = 150 °C I

RRM

F

I

R

R

rr

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

40

3.5

30

20

10

0

thJA

0 5 10 15 25

R - Therm. Resist. Junction/Ambient (K/W)

94 9462

l - Lead Length ( mm )

ll

TL= constant

20

30

3.0

2.5

2.0

1.5

1.0

R

= 70 K/W

thJA

PCB:d=25mm

0 20 40 60 80 100 120 140 160 180

T

- Ambient Temperature ( °C)

amb

16366

0.5

FAV

I - A verage Forward Current ( A )

0

25 K/W

70 K/W

V

half sinewave

R

=V

R

RRM

= 25 K/W

thJA

l=10mm

1.4 V

5 µA

150 µA

100 ns

Figure 1. Max. Thermal Resistance vs. Lead Length

100

10

Tj=175°C

1

0.1

F

I - Forward Current ( A)

0.01

0.001
0 0.5 1.0 1.5 2.0 2.5 3.0

16365

Tj=25° C

VF- Forward Voltage(V)

Figure 2. Forward Current vs. Forward Voltage

www.vishay.com

2

Figure 3. Max. Average Forward Current vs. Ambient Temperature

1000

VR=V

RRM

100

10

R

I - Reverse Current ( µA)

1

25 7550 100 125 150 175

16367

T

– Junction Temperature ( °C)

j

Figure 4. Reverse Current vs. Junction Temperature

Document Number 86032

Rev. 1.6, 13-Apr-05