Ultra Fast Avalanche Sinterglass Diode
Features
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• Soft recovery characteristics
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
e2
BYT53.
Vishay Semiconductors
949539
Applications
Very fast rectification and switches
Switched mode power supplies
High-frequency inverter circuits
Parts Table
Part Type differentiation Package
BYT53A V
BYT53B V
BYT53C V
BYT53D V
BYT53F V
BYT53G V
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Part Symbol Val ue Unit
Reverse voltage = Repetitive
peak reverse voltage
Peak forward surge current t
see electrical characteristics BYT53A V
= 10 ms, half sinewave I
p
= 50 V; I
R
= 100 V; I
R
= 150 V; I
R
= 200 V; I
R
= 300 V; I
R
= 400 V; I
R
Mechanical Data
Case: SOD-57 Sintered glass case
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: approx. 369 mg
= 1.9 A SOD-57
FAV
= 1.9 A SOD-57
FAV
= 1.9 A SOD-57
FAV
= 1.9 A SOD-57
FAV
= 1.9 A SOD-57
FAV
= 1.9 A SOD-57
FAV
= V
R
BYT53B V
BYT53C V
BYT53D V
BYT53F V
BYT53G V
R
R
R
R
R
= V
= V
= V
= V
= V
FSM
RRM
RRM
RRM
RRM
RRM
RRM
50 V
100 V
150 V
200 V
300 V
400 V
50 A
Document Number 86030
Rev. 1.8, 14-Apr-05
www.vishay.com
1
BYT53.
Vishay Semiconductors
Parameter Test condition Part Symbol Valu e Unit
Average forward current l = 10 mm, TL = 25 °C I
Junction and storage
temperature range
Non repetitive reverse
avalanche energy
Maximum Thermal Resistance
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Part Symbol Valu e Unit
Junction ambient l = 10 mm, T
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Par t Symbol Min Ty p . Max Unit
Forward voltage I
Reverse current V
Reverse recovery time I
= 1 A E
I
(BR)R
= constant R
L
on PC board with spacing
25 mm
= 1 A V
F
I
= 1 A, Tj = 175 °C V
F
= V
R
RRM
V
= V
R
= 0.5 A, IR = 1 A, iR = 0.25 A t
F
, Tj = 150 °C I
RRM
F
F
I
R
R
rr
FAV
T
= T
j
stg
R
thJA
R
thJA
1.9 A
- 55 to + 175 °C
20 mJ
45 K/W
100 K/W
1.1 V
0.9 V
5 µA
200 µA
50 ns
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
120
10
100
Tj= 175 °C
80
thJA
R - Therm. Resist. Junction/Ambient (K/W)
94 9552
60
40
20
0
0
51015 25
l - Lead Length ( mm )
ll
TL= constant
20
30
Figure 1. Max. Thermal Resistance vs. Lead Length
1
Tj=25°C
0.1
0.01
F
I - Forward Current(A)
0.001
0 0.5 1 1.5 2 2.5 3
16333
VF- Forward Voltage(V)
Figure 2. Forward Current vs. Forward Voltage
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Document Number 86030
Rev. 1.8, 14-Apr-05