Fast Silicon Mesa SMD Rectifier
g
Features
D
Glass passivated junction
D
Low reverse current
D
Soft recovery characteristics
D
Fast reverse recovery time
D
Good switching characteristics
D
Wave and reflow solderable
Applications
Surface mounting
Fast rectifier
Freewheeling diodes in SMPS and converters
Snubber diodes
BYG21
Vishay Telefunken
15 811
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit
Reverse voltage BYG21K VR=V
=Repetitive peak reverse voltage
Peak forward surge current tp=10ms,
half sinewave
Average forward current I
Junction and storage
temperature range
Pulse energy in avalanche mode,
non repetitive
(inductive load switch off)
I
=1A, Tj=25°C E
(BR)R
BYG21M VR=V
I
FSM
FAV
Tj=T
RRM
RRM
stg
R
800 V
1000 V
30 A
1.5 A
–55...+150
20 mJ
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Junction lead TL=const. R
Junction ambient mounted on epoxy–glass hard tissue R
mounted on epoxy–glass hard tissue, 50mm2 35mm Cu R
mounted on Al–oxid–ceramic (Al2O3), 50mm2 35mm Cu R
thJL
thJA
thJA
thJA
25 K/W
150 K/W
125 K/W
100 K/W
°
C
Document Number 86010
Rev. 3, 24-Jun-98
www.vishay.de • FaxBack +1-408-970-5600
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BYG21
g
Vishay Telefunken
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=1A V
IF=1.5A V
Reverse current VR=V
VR=V
RRM
, Tj=100°C I
RRM
Reverse recovery time IF=0.5A, IR=1A, iR=0.25A t
Characteristics (Tj = 25_C unless otherwise specified)
F
F
I
R
R
rr
1.5 V
1.6 V
1
m
10
m
120 ns
A
A
100
10
m
1
VR=V
R
I – Reverse Current ( A )
94 9347
0.1
0.01
0 40 80 120 160
Tj – Junction Temperature ( °C )
RRM
200
Figure 1. Typ. Reverse Current vs. Junction Temperature
2.0
1.6
R
=25K/W
thJA
1.2
0.8
100K/W
125K/W
0.4
FAV
I – Average Forward Current ( A )
0
150K/W
0
40 80 120 160
T
– Ambient Temperature ( °C )94 9345
amb
200
100
10
1
25°C
F
0.1
I – Forward Current ( A )
0.01
01 2 3
VF – Forward Voltage ( V )94 9348
75°C
Tj=125°C
4
Figure 3. Typ. Forward Current vs. Forward Voltage
600
T
=125°C
amb
100°C
75°C
50°C
25°C
1.0
rr
t – Reverse Recovery Time ( ns )
94 9349
500
400
300
200
100
IR=0.5A, iR=0.125A
0
0 0.2 0.4 0.6 0.8
IF – Forward Current ( A )
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
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Figure 4. Max. Reverse Recovery Time vs.
Forward Current
Document Number 86010
Rev. 3, 24-Jun-98
200
T
=125°C
amb
150
100°C
75°C
50°C
100
25°C
50
rr
Q – Reverse Recovery Charge ( nC )
IR=0.5A, iR=0.125A
0
1.0
94 9350
0 0.2 0.4 0.6 0.8
I
– Forward Current ( A )
F
Figure 5. Max. Reverse Recovery Charge vs. Forward
Current
1000
BYG21
Vishay Telefunken
125K/W DC
100
tp/T=0.5
tp/T=0.2
tp/T=0.1
10
tp/T=0.05
tp/T=0.02
tp/T=0.01
1
thp
Z – Thermal Resistance for Pulse Cond. (K/W)
–5
10
–4
10
Single Pulse
–3
10
–2
10
–1
10
0
10
1
10
2
10
tp – Pulse Length ( s )94 9339
Figure 6. Thermal Response
Document Number 86010
Rev. 3, 24-Jun-98
www.vishay.de • FaxBack +1-408-970-5600
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BYG21
Vishay Telefunken
Dimensions in mm
14275
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Document Number 86010
Rev. 3, 24-Jun-98
BYG21
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Document Number 86010
Rev. 3, 24-Jun-98
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.de • FaxBack +1-408-970-5600
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