VISHAY BY 203 S

VISHAY

Fast Avalanche Sinterglass Diode

\

Features

• Glass passivated junction

• Hermetically sealed package

Applications

Fast rectification and switching avalanche sinterglass
diode for TV-line output circuits and switch mode
power supply

BY203/..S

Vishay Semiconductors

Mechanical Data

Case: Sintered glass case, SOD 57
Terminals: Plated axial leads, solderable per

MIL-STD-750, Method 2026

Polarity: Color band denotes cathode end

Weight: 370 mg, (max. 500 mg)

Mounting Position: Any

Parts Table

Part Type differentiation Package

BY203-12S VR = 1200 V; I

BY203-16S VR = 1600 V; I

BY203-20S VR = 2000 V; I

= 250 mA SOD57

FAV

= 250 mA SOD57

FAV

= 250 mA SOD57

FAV

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Parameter Te s t co n d i t io n Sub type Symbol Val ue Unit

Reverse voltage = Repetitive peak reverse
voltage

Average forward current I

Peak forward surge current tp = 10 ms half sinewave I

Junction temperature range T

Storage temperature range T

Non repetitive reverse avalanche energy I

IR = 100 µA BY203-

12S

IR = 100 µA BY203-

IR = 100 µA BY203-

= 0.4 A E

(BR)R

16S

20S

VR =

V

RRM

VR =

V

RRM

VR =

V

RRM

FAV

FSM

stg

j

R

949539

1200 V

1600 V

2000 V

250 mA

20 A

-55 to
+150

-55 to
+175

10 mJ

°C

°C

Maximum Thermal Resistance

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Sub type Symbol Val ue Unit

Junction ambient l = 10 mm, TL = constant R

maximum lead length R

Document Number 86002

Rev. 5, 07-Jan-03

thJA

thJA

45 K/W

100 K/W

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1

BY203/..S

g

Vishay Semiconductors

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Para me te r Test condition Sub type Symbol Min Typ . Max Unit

Forward voltage IF = 200 mA, tp/T = 0.01, tp = 0.3

ms

Reverse current VR = 700 V BY203-12S I

VR = 1000 V BY203-16S I

VR = 1200 V BY203-20S I

Breakdown voltage IR = 100 µA, tp/T = 0.01, tp = 0.3 ms BY203-12S V

IR = 100 µA, tp/T = 0.01, tp = 0.3 ms BY203-16S V

IR = 100 µA, tp/T = 0.01, tp = 0.3 ms BY203-20S V

Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A t

V

R

R

R

(BR)

(BR)

(BR)

rr

F

1200 V

1600 V

2000 V

VISHAY

2.4 V

2 µA

2 µA

2 µA

300 ns

Typical Characteristics (T

240

200

°

160

120

80

j

40

T – Junction Temperature ( C )

0

94 9080

BY203/12

BY203/16

0 400 800 1200
VR,V

– Reverse / Repetitive Peak Reverse

RRM

Volta

e ( V )

= 25 °C unless otherwise specified)

amb

V

RRM

V

R

BY203/20

1600

Figure 1. Junction Temperature vs. Reverse/Repetitive Peak

Reverse Voltage

10.000

1.000

Tj=175°C

0.30

0.25

0.20

R

0.15

0.10

0.05

FAV

I – Average Forward Current ( A )

0.00

0 30 60 90 120 150

16398

thJA

PCB: d=25mm

VR=V

RRM

half sinewave

T

– Ambient Temperature ( °C )

amb

=100K/W

R

thJA

=45K/W

l=10mm

Figure 3. Max. Average Forward Current vs. Ambient Temperature

1000

VR = V

RRM

mI – Reverse Current ( A )

100

0.100

0.010

F

I – Forward Current ( A)

0.001

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

16397

Figure 2. Forward Current vs. Forward Voltage

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2

Tj=25°C

VF – Forward Voltage ( V )

10

R

1

25 50 75 100 125 150

16399

Tj – Junction Temperature ( °C )

Figure 4. Reverse Current vs. Junction Temperature

Document Number 86002

Rev. 5, 07-Jan-03