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VISHAY
Fast Avalanche Sinterglass Diode
\
Features
• Glass passivated junction
• Hermetically sealed package
Applications
Fast rectification and switching avalanche sinterglass
diode for TV-line output circuits and switch mode
power supply
BY203/..S
Vishay Semiconductors
Mechanical Data
Case: Sintered glass case, SOD 57
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Weight: 370 mg, (max. 500 mg)
Mounting Position: Any
Parts Table
Part Type differentiation Package
BY203-12S VR = 1200 V; I
BY203-16S VR = 1600 V; I
BY203-20S VR = 2000 V; I
= 250 mA SOD57
FAV
= 250 mA SOD57
FAV
= 250 mA SOD57
FAV
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Te s t co n d i t io n Sub type Symbol Val ue Unit
Reverse voltage = Repetitive peak reverse
voltage
Average forward current I
Peak forward surge current tp = 10 ms half sinewave I
Junction temperature range T
Storage temperature range T
Non repetitive reverse avalanche energy I
IR = 100 µA BY203-
12S
IR = 100 µA BY203-
IR = 100 µA BY203-
= 0.4 A E
(BR)R
16S
20S
VR =
V
RRM
VR =
V
RRM
VR =
V
RRM
FAV
FSM
stg
j
R
949539
1200 V
1600 V
2000 V
250 mA
20 A
-55 to
+150
-55 to
+175
10 mJ
°C
°C
Maximum Thermal Resistance
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Sub type Symbol Val ue Unit
Junction ambient l = 10 mm, TL = constant R
maximum lead length R
Document Number 86002
Rev. 5, 07-Jan-03
thJA
thJA
45 K/W
100 K/W
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BY203/..S
g
Vishay Semiconductors
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Para me te r Test condition Sub type Symbol Min Typ . Max Unit
Forward voltage IF = 200 mA, tp/T = 0.01, tp = 0.3
ms
Reverse current VR = 700 V BY203-12S I
VR = 1000 V BY203-16S I
VR = 1200 V BY203-20S I
Breakdown voltage IR = 100 µA, tp/T = 0.01, tp = 0.3 ms BY203-12S V
IR = 100 µA, tp/T = 0.01, tp = 0.3 ms BY203-16S V
IR = 100 µA, tp/T = 0.01, tp = 0.3 ms BY203-20S V
Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A t
V
R
R
R
(BR)
(BR)
(BR)
rr
F
1200 V
1600 V
2000 V
VISHAY
2.4 V
2 µA
2 µA
2 µA
300 ns
Typical Characteristics (T
240
200
°
160
120
80
j
40
T – Junction Temperature ( C )
0
94 9080
BY203/12
BY203/16
0 400 800 1200
VR,V
– Reverse / Repetitive Peak Reverse
RRM
Volta
e ( V )
= 25 °C unless otherwise specified)
amb
V
RRM
V
R
BY203/20
1600
Figure 1. Junction Temperature vs. Reverse/Repetitive Peak
Reverse Voltage
10.000
1.000
Tj=175°C
0.30
0.25
0.20
R
0.15
0.10
0.05
FAV
I – Average Forward Current ( A )
0.00
0 30 60 90 120 150
16398
thJA
PCB: d=25mm
VR=V
RRM
half sinewave
T
– Ambient Temperature ( °C )
amb
=100K/W
R
thJA
=45K/W
l=10mm
Figure 3. Max. Average Forward Current vs. Ambient Temperature
1000
VR = V
RRM
mI – Reverse Current ( A )
100
0.100
0.010
F
I – Forward Current ( A)
0.001
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
16397
Figure 2. Forward Current vs. Forward Voltage
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2
Tj=25°C
VF – Forward Voltage ( V )
10
R
1
25 50 75 100 125 150
16399
Tj – Junction Temperature ( °C )
Figure 4. Reverse Current vs. Junction Temperature
Document Number 86002
Rev. 5, 07-Jan-03
Page 3
VISHAY
BY203/..S
Vishay Semiconductors
500
400
300
200
100
R
P – Reverse Power Dissipation ( mW )
0
25 50 75 100 125 150
16400
PR–Limit
@80%V
Tj – Junction Temperature ( °C )
PR–Limit
@100%V
R
VR = V
R
RRM
Figure 5. Max. Reverse Power Dissipation vs. Junction
Temperature
Package Dimensions in mm
Sintered Glass Case
SOD 57
Weight max. 0.5g
Cathode Identification
18
16
14
12
10
8
6
4
D
C – Diode Capacitance ( pF )
2
0
0.1 1.0 10.0 100.0
16401
Figure 6. Diode Capacitance vs. Reverse Voltage
∅ 3.6 max.
VR – Reverse Voltage ( V )
technical drawings
according to DIN
specifications
f=1MHz
94 9538
∅ 0.82 max.
26 min. 26 min.
Document Number 86002
Rev. 5, 07-Jan-03
4.2 max.
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BY203/..S
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 86002
Rev. 5, 07-Jan-03
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