VISHAY BUD725D User Manual

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查询BUD725D供应商

Silicon NPN High Voltage Switching Transistor

Features

D

Monolithic integrated C-E-free-wheel diode

D

Simple-sWitch-Off Transistor (SWOT)

D

HIGH SPEED technology

D

Planar passivation

D

100 kHz switching rate

Applications

Electronic lamp ballast circuits
Switch-mode power supplies

D

Very low switching losses

D

Very low dynamic saturation

D

Very low operating temperature

D

Optimized RBSOA

D

High reverse voltage

BUD725D

Vishay Telefunken

1

1

2

3

BUD725D

1 Base 2 Collector 3 Emitter

94 8964

BUD725D –SMD

1 Base 2 Collector 3 Emitter

Absolute Maximum Ratings

T

= 25°C, unless otherwise specified

case

Parameter Test Conditions Symbol Value Unit

Collector-emitter voltage V

V

Emitter-base voltage V
Collector current I
Collector peak current I
Base current I
Base peak current I
Total power dissipation T
Junction temperature T
Storage temperature range T

≤ 60°C P

case

V

3

CEO

CEW

CES
EBO

C

CM

B

BM

tot

j

stg

2

94 8965

400 V
500 V
700 V

11 V

5 A

7.5 A

2.5 A

3.5 A
25 W

150

–65 to +150

°

C

°

C

Document Number 86506
Rev. 1, 14–Jul–98

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1 (8)

BUD725D

yg

C B1

Vishay Telefunken

Maximum Thermal Resistance

T

= 25°C, unless otherwise specified

case

Parameter Test Conditions Symbol Value Unit

Junction case R

Electrical Characteristics

T

= 25°C, unless otherwise specified

case

Parameter Test Conditions Symbol Min Typ Max Unit
Transistor
Collector cut-off current V

Collector-emitter breakdown
voltage (figure 1)

Emitter-base breakdown voltage IE = 1 mA V
Collector-emitter saturation voltage IC = 850 mA; IB = 210 mA V
Base-emitter saturation voltage IC = 850 mA; IB = 210 mA V
DC forward current transfer ratio VCE = 2 V; IC = 10 mA h

Collector-emitter working voltage VS = 50 V; L = 1 mH; IC = 5 A;

Dynamic saturation voltage IC = 2.5 A; IB = 0.5 A; t = 1 ms V

Gain bandwidth product IC = 500 mA; VCE = 10 V;

Free-wheel diode
Forward voltage IF = 1.67 A V

= 700 V I

CES

V

= 700 V; T

CES

IC = 300 mA; L = 125 mH;
I

measure

= 100 mA

= 150°C I

case

V

(BR)CEO

(BR)EBO

VCE = 2 V; IC = 850 mA h
VCE = 5 V; IC = 5 A h

V

I

= 1.7 A; –IB2 = 0.5 A;

B1

–VBB = 5 V

CEsatdyn

IC = 2.5 A; IB = 0.5 A; t = 3 ms V

CEsatdyn

f = 1 MHz

thJC

CES
CES

CEsat
BEsat

FE
FE
FE

CEW

f

T

F

3.6 K/W

50

m

0.5 mA

400 V

11 V

0.2 V
1 V

10
10

4

500 V

12 V

3 V

4 MHz

1.2 V

A

Switching Characteristics

T

= 25°C, unless otherwise specified

case

Parameter Test Conditions Symbol Min Typ Max Unit
Application specific switching time
measured with Nylos3 t
Resistive load (figure 2)
Turn on time IC = 0.85 A; IB1 = 0.2 A; t
Storage time
Fall time t

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–IB2 = 0.4 A; VS = 250 V

t

on

x

0.55 0.9

0.2

s

f

Document Number 86506

3

0.4

Rev. 1, 14–Jul–98

m

s

m

s

m

s

m

s

94 8863

3 Pulses

t

p

+

T
tp+

V

S2

0.1
10 ms

+

10 V

IBw

BUD725D

Vishay Telefunken

I

C

I

measure

I

C

5

ICL

C

VS1+

0to30V

V

(BR)CEO

I

(BR)R

+

100 m

V

CE

V

(BR)CEO

W

94 8852

I

B1

Figure 1. Test circuit for V

I

B

I

B1

(BR)CE0

0

t

–I

R

C

I

C

B2

(1)

I

0.9 I

0.1 I

C

C

C

t

r

t

d

t

on

t

s

t

off

t

t

f

V

I

B

R

B

V

BB

+

CE

V

CC

(1) Fast electronic switch

Document Number 86506

Rev. 1, 14–Jul–98

Figure 2. Test circuit for switching characteristics – resistive load

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BUD725D

Vishay Telefunken

Typical Characteristics (T

7

6

5

4

< I

C

CEsat

B2

< 2 V

CEW

< 0.5 x I

C

– Diagram

IB=0.1A

3

2

C

I – Collector Current ( A )

1

0

0.1 x I
V

0 100 200 300 400 500 600

VCE – Collector Emitter Voltage ( V )13743

Figure 3. V

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

C

1.0

I – Collector Current ( A )

0.5
0

01234567891011

VCE – Collector Emitter Voltage ( V )13745

= 25_C unless otherwise specified)

case

100.00

10.00

1.00

12.5K/W

0.10

tot

P – Total Power Dissipation ( W )

0.01
0 25 50 75 100 125 150

25K/W

T

– Case Temperature ( °C )13744

case

Figure 6. P

10.00

0.5A

0.4A

0.3A

0.2A

1.00

0.10

IC=0.5A

0.01

CEsat

V – Collector Emitter Saturation Voltage ( V )

0.01 0.10 1.00 10.00
IB – Base Current ( A )13746

tot

50K/W

R

vs.T

3.12K/W

=85K/W

thJA

case

1.5A

0.85A

5A

2.5A

Figure 4. IC vs. V

100

10

FE

h – Forward DC Current Transfer Ratio

1

0.01 0.10 1.00 10.00
IC – Collector Current ( A )13747

CE

Figure 5. hFE vs. I

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5V

VCE=2V

C

10V

Figure 7. V

100

T

= 125°C

j

10

FE

h – Forward DC Current Transfer Ratio

VCE=2V

1

0.01 0.10 1.00 10.00

75°C

IC – Collector Current ( A )13748

Figure 8. hFE vs. I

vs. I

CEsat

25°C

B

C

Document Number 86506

Rev. 1, 14–Jul–98

BUD725D

Vishay Telefunken

m

s

t – Storage Time ( s )

13749

m

s

t – Storage Time ( s )

14251

10

saturated switching

8

R-load
I

= 0.85A, IB1 = 0.1A

C

6

4

T

= 125°C

case

2

T

= 25°C

case

0

0123456

–IB2/I

B1

Figure 9. ts vs. –IB2/I

B1

10

saturated switching

8

R-load
I

= 0.85A, IB1 = 0.2A

C

6

4

T

case

= 125°C

2

T

= 25°C

case

0

01234

–IB2/I

B1

m

f

t – Fall Time ( s )

13750

m

f

t – Fall Time ( s )

14252

0.7

0.6

0.5

saturated switching
R-load
I

= 0.85A, IB1 = 0.1A

C

0.4
T

= 125°C

0.3

case

0.2

0.1

T

= 25°C

case

0

0123456

–IB2/I

B1

Figure 12. tf vs. –IB2/I

B1

0.7

0.6

0.5

0.4

saturated switching
R-load
I

= 0.85A, IB1 = 0.2A

C

T

= 125°C

case

0.3

0.2

0.1

T

= 25°C

case

0

01234

–IB2/I

B1

Figure 10. ts vs. –IB2/I

100.00
FBSOA

10.00

1.00
tp/Tv0.0

1

0.10

C

I – Collector Current ( A )

0.01

1 10 100 1000 10000

VCE – Collector Emitter Voltage ( V )13742

Figure 11. IC vs. V

Document Number 86506
Rev. 1, 14–Jul–98

B1

tp=10ms

50ms

100ms

500ms

1ms
5ms

DC

CE

Figure 13. tf vs. –IB2/I

10.00

1.00

0.10

F

I – Forward Current ( A )

0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

VF – Forward Voltage ( V )14253

Figure 14. IF vs. V

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B1

F

5 (8)

BUD725D

Vishay Telefunken

Dimensions in mm

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14292

Document Number 86506

Rev. 1, 14–Jul–98

BUD725D

Vishay Telefunken

For ordering TO 252 add SMD to the type number (i.e. BUD725D –SMD)

Document Number 86506
Rev. 1, 14–Jul–98

14293

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BUD725D

Vishay Telefunken

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their

impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as

ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and

forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application

by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the

buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or

indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: [phone], Fax number: 49 (0)7131 67 2423

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Document Number 86506

Rev. 1, 14–Jul–98