VISHAY BUD725D User Manual
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查询BUD725D供应商
Silicon NPN High Voltage Switching Transistor
Features
D
Monolithic integrated C-E-free-wheel diode
D
Simple-sWitch-Off Transistor (SWOT)
D
HIGH SPEED technology
D
Planar passivation
D
100 kHz switching rate
Applications
Electronic lamp ballast circuits
Switch-mode power supplies
D
Very low switching losses
D
Very low dynamic saturation
D
Very low operating temperature
D
Optimized RBSOA
D
High reverse voltage
BUD725D
Vishay Telefunken
1
1
2
3
BUD725D
1 Base 2 Collector 3 Emitter
94 8964
BUD725D –SMD
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings
T
= 25°C, unless otherwise specified
case
Parameter Test Conditions Symbol Value Unit
Collector-emitter voltage V
V
Emitter-base voltage V
Collector current I
Collector peak current I
Base current I
Base peak current I
Total power dissipation T
Junction temperature T
Storage temperature range T
≤ 60°C P
case
V
3
CEO
CEW
CES
EBO
C
CM
B
BM
tot
j
stg
2
94 8965
400 V
500 V
700 V
11 V
5 A
7.5 A
2.5 A
3.5 A
25 W
150
–65 to +150
°
C
°
C
Document Number 86506
Rev. 1, 14–Jul–98
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1 (8)
BUD725D
yg
C B1
Vishay Telefunken
Maximum Thermal Resistance
T
= 25°C, unless otherwise specified
case
Parameter Test Conditions Symbol Value Unit
Junction case R
Electrical Characteristics
T
= 25°C, unless otherwise specified
case
Parameter Test Conditions Symbol Min Typ Max Unit
Transistor
Collector cut-off current V
Collector-emitter breakdown
voltage (figure 1)
Emitter-base breakdown voltage IE = 1 mA V
Collector-emitter saturation voltage IC = 850 mA; IB = 210 mA V
Base-emitter saturation voltage IC = 850 mA; IB = 210 mA V
DC forward current transfer ratio VCE = 2 V; IC = 10 mA h
Collector-emitter working voltage VS = 50 V; L = 1 mH; IC = 5 A;
Dynamic saturation voltage IC = 2.5 A; IB = 0.5 A; t = 1 ms V
Gain bandwidth product IC = 500 mA; VCE = 10 V;
Free-wheel diode
Forward voltage IF = 1.67 A V
= 700 V I
CES
V
= 700 V; T
CES
IC = 300 mA; L = 125 mH;
I
measure
= 100 mA
= 150°C I
case
V
(BR)CEO
(BR)EBO
VCE = 2 V; IC = 850 mA h
VCE = 5 V; IC = 5 A h
V
I
= 1.7 A; –IB2 = 0.5 A;
B1
–VBB = 5 V
CEsatdyn
IC = 2.5 A; IB = 0.5 A; t = 3 ms V
CEsatdyn
f = 1 MHz
thJC
CES
CES
CEsat
BEsat
FE
FE
FE
CEW
f
T
F
3.6 K/W
50
m
0.5 mA
400 V
11 V
0.2 V
1 V
10
10
4
500 V
12 V
3 V
4 MHz
1.2 V
A
Switching Characteristics
T
= 25°C, unless otherwise specified
case
Parameter Test Conditions Symbol Min Typ Max Unit
Application specific switching time
measured with Nylos3 t
Resistive load (figure 2)
Turn on time IC = 0.85 A; IB1 = 0.2 A; t
Storage time
Fall time t
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–IB2 = 0.4 A; VS = 250 V
t
on
x
0.55 0.9
0.2
s
f
Document Number 86506
3
0.4
Rev. 1, 14–Jul–98
m
s
m
s
m
s
m
s
94 8863
3 Pulses
t
p
+
T
tp+
V
S2
0.1
10 ms
+
10 V
IBw
BUD725D
Vishay Telefunken
I
C
I
measure
I
C
5
ICL
C
VS1+
0to30V
V
(BR)CEO
I
(BR)R
+
100 m
V
CE
V
(BR)CEO
W
94 8852
I
B1
Figure 1. Test circuit for V
I
B
I
B1
(BR)CE0
0
t
–I
R
C
I
C
B2
(1)
I
0.9 I
0.1 I
C
C
C
t
r
t
d
t
on
t
s
t
off
t
t
f
V
I
B
R
B
V
BB
+
CE
V
CC
(1) Fast electronic switch
Document Number 86506
Rev. 1, 14–Jul–98
Figure 2. Test circuit for switching characteristics – resistive load
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