VISHAY BUD700D User Manual

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查询BUD700D供应商

Silicon NPN High Voltage Switching Transistor

Features

D

Monolithic integrated C-E-free-wheel diode

D

Simple-sWitch-Off Transistor (SWOT)

D

HIGH SPEED technology

D

Planar passivation

D

100 kHz switching rate

Applications

Electronic lamp ballast circuits

D

Very low switching losses

D

Very low dynamic saturation

D

Very low operating temperature

D

Optimized RBSOA

D

High reverse voltage

BUD700D

Vishay Telefunken

1

1

2

3

BUD700D

1 Base 2 Collector 3 Emitter

94 8964

BUD700D –SMD

1 Base 2 Collector 3 Emitter

Absolute Maximum Ratings

T

= 25°C, unless otherwise specified

case

Parameter Test Conditions Symbol Value Unit

Collector-emitter voltage V

V

Emitter-base voltage V
Collector current I
Collector peak current I
Base current I
Base peak current I
Total power dissipation T
Junction temperature T
Storage temperature range T

≤ 50°C P

case

V

3

CEO

CEW

CES
EBO

C

CM

B

BM

tot

j

stg

2

94 8965

400 V
500 V
700 V

11 V

2 A
3 A

0.75 A
1 A

20 W

150

–65 to +150

°

C

°

C

Document Number 86505
Rev. 1, 20–Jan–99

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1 (8)

BUD700D

yg

C B1

Vishay Telefunken

Maximum Thermal Resistance

T

= 25°C, unless otherwise specified

case

Parameter Test Conditions Symbol Value Unit

Junction case R

Electrical Characteristics

T

= 25°C, unless otherwise specified

case

Parameter Test Conditions Symbol Min Typ Max Unit
Transistor
Collector cut-off current VCE = 700 V I

VCE = 700 V; T

Collector-emitter breakdown
voltage (figure 1)

IC = 300 mA; L = 125 mH;
I

measure

= 100 mA
Emitter-base breakdown voltage IE = 1 mA V
Collector-emitter saturation voltage IC = 0.3 A; IB = 0.1 A V
Base-emitter saturation voltage IC = 0.3 A; IB = 0.1 A V
DC forward current transfer ratio VCE = 2 V; IC = 10 mA h

VCE = 2 V; IC = 0.3 A h
VCE = 5 V; IC = 2 A h

Collector-emitter working voltage VS = 50 V; L = 1 mH; IC = 2 A;

I

= 0.7 A; –IB2 = 0.2 A;

B1

–VBB = 5 V

Dynamic saturation voltage IC = 1 A; IB = 0.2 A; t = 1 ms V

IC = 1 A; IB = 0.2 A; t = 3 ms V

Gain bandwidth product IC = 200 mA; VCE = 10 V;

f = 1 MHz
Free-wheel diode
Forward voltage IF = 0.7 A V

= 150°C I

case

V

(BR)CEO

(BR)EBO

V

CEsatdyn
CEsatdyn

thJC

CES
CES

CEsat
BEsat

FE
FE
FE

CEW

f

T

F

5 K/W

50

m

0.5 mA

400 V

11 V

0.1 0.2 V

0.9 1 V
10
10

4 6

500 V

15 V

4 V

4 MHz

1.2 V

A

Switching Characteristics

T

= 25°C, unless otherwise specified

case

Parameter Test Conditions Symbol Min Typ Max Unit
Application specific switching time
measured with Nylos3 t
Resistive load (figure 2)
Turn on time IC = 330 mA; IB1 = 85 mA; t
Storage time
Fall time t

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–IB2 = 170 mA; VS = 250 V

t

on

x

0.75

0.25

s

f

Document Number 86505

3

0.4

Rev. 1, 20–Jan–99

m

s

m

s

m

s

m

s

94 8863

3 Pulses

t

p

+

T
tp+

V

S2

0.1
10 ms

+

10 V

IBw

BUD700D

Vishay Telefunken

I

C

I

measure

I

C

5

ICL

C

VS1+

0to30V

V

(BR)CEO

I

(BR)R

+

100 m

V

CE

V

(BR)CEO

W

94 8852

I

B1

Figure 1. Test circuit for V

I

B

I

B1

(BR)CE0

0

t

–I

R

C

I

C

B2

(1)

I

V

I

B

R

B

V

BB

+

CE

V

CC

(1) Fast electronic switch

Figure 2. Test circuit for switching characteristics – resistive load

C

0.9 I

0.1 I

C

C

t

r

t

d

t

on

t

s

t

off

t

t

f

Document Number 86505
Rev. 1, 20–Jan–99

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BUD700D

Vishay Telefunken

Typical Characteristics (T

4

3

2

1

C

I – Collector Current ( A )

0

0 100 200 300 400 500

VCE – Collector Emitter Voltage ( V )13723

Figure 3. V

2.00

1.75

1.50

1.25

1.00

0.75

0.50

C

I – Collector Current ( A )

0.25
0

0123456789101112

VCE – Collector Emitter Voltage ( V )13725

0.1 x I
V

< I

C

CEsat

B2

< 2 V

CEW

< 0.5 x I

C

– Diagram

IB=0.05A

= 25_C unless otherwise specified)

case

100.00

10.00

1.00

12.5K/W

0.10

tot

P – Total Power Dissipation ( W )

0.01
0 25 50 75 100 125 150

25K/W

T

– Case Temperature ( °C )13724

case

Figure 6. P

0.25A

0.2A

0.15A

0.1A

10.00

1.00

0.10
IC=0.2A

0.01

CEsat

V – Collector Emitter Saturation Voltage ( V )

0.01 0.10 1.00 10.00
IB – Base Current ( A )13726

tot

5K/W

50K/W

R

thJA

vs.T

0.35A

=135K/W

case

2A

1A

Figure 4. IC vs. V

100

10

FE

h – Forward DC Current Transfer Ratio

1

0.01 0.10 1.00 10.00
IC – Collector Current ( A )13727

CE

Figure 5. hFE vs. I

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VCE=2V

C

10V

5V

Figure 7. V

100

T

= 125°C

j

10

FE

h – Forward DC Current Transfer Ratio

1

0.01 0.10 1.00 10.00

75°C

VCE=2V

IC – Collector Current ( A )13728

Figure 8. hFE vs. I

vs. I

CEsat

25°C

C

Document Number 86505

B

Rev. 1, 20–Jan–99

BUD700D

Vishay Telefunken

m

s

t – Storage Time ( s )

13729

m

s

t – Storage Time ( s )

13731

10

saturated switching

8

R-load
I

= 0.35A, IB1 = 0.04A

C

6

4

T

= 125°C

case

2

T

= 25°C

case

0

0123456

–IB2/I

B1

Figure 9. ts vs. –IB2/I

B1

10

saturated switching

8

R-load

= 0.35A, IB1 = 0.085A

I

C

6

4

T

case

= 125°C

2

T

= 25°C

case

0

01234

–IB2/I

B1

m

f

t – Fall Time ( s )

13730

m

f

t – Fall Time ( s )

13732

0.7

0.6

0.5

saturated switching
R-load
I

= 0.35A, IB1 = 0.04A

C

0.4
T

= 125°C

case

0.3

0.2

0.1

T

= 25°C

case

0

0123456

–IB2/I

B1

Figure 12. tf vs. –IB2/I

B1

0.7

0.6

0.5

0.4

saturated switching
R-load
I

= 0.35A, IB1 = 0.085A

C

T

= 125°C

case

0.3

T

= 25°C

0.2

case

0.1

0

01234

–IB2/I

B1

Figure 10. ts vs. –IB2/I

10.00

1.00

0.10

F

I – Forward Current ( A )

0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

VF – Forward Voltage ( V )13733

Figure 11. IF vs. V

Document Number 86505
Rev. 1, 20–Jan–99

B1

Figure 13. tf vs. –IB2/I

B1

F

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BUD700D

Vishay Telefunken

Dimensions in mm

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14292

Document Number 86505

Rev. 1, 20–Jan–99

BUD700D

Vishay Telefunken

For ordering TO 252 add SMD to the type number (i.e. BUD700D –SMD)

Document Number 86505
Rev. 1, 20–Jan–99

14293

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BUD700D

Vishay Telefunken

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their

impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as

ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and

forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application

by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the

buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or

indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: [phone], Fax number: 49 (0)7131 67 2423

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Document Number 86505

Rev. 1, 20–Jan–99