VISHAY BUD700D User Manual

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查询BUD700D供应商
Silicon NPN High Voltage Switching Transistor
Features
Monolithic integrated C-E-free-wheel diode
Simple-sWitch-Off Transistor (SWOT)
HIGH SPEED technology
Planar passivation
100 kHz switching rate
Applications
Electronic lamp ballast circuits
Very low switching losses
Very low dynamic saturation
Very low operating temperature
Optimized RBSOA
High reverse voltage
BUD700D
Vishay Telefunken
1
1
2
3
BUD700D
1 Base 2 Collector 3 Emitter
94 8964
BUD700D –SMD
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings
T
= 25°C, unless otherwise specified
case
Parameter Test Conditions Symbol Value Unit
Collector-emitter voltage V
V
Emitter-base voltage V Collector current I Collector peak current I Base current I Base peak current I Total power dissipation T Junction temperature T Storage temperature range T
50°C P
case
V
3
CEO
CEW
CES EBO
C
CM
B
BM
tot
j
stg
2
94 8965
400 V 500 V 700 V
11 V
2 A 3 A
0.75 A 1 A
20 W
150
–65 to +150
°
C
°
C
Document Number 86505 Rev. 1, 20–Jan–99
www.vishay.de FaxBack +1-408-970-5600
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BUD700D
yg
C B1
Vishay Telefunken
Maximum Thermal Resistance
T
= 25°C, unless otherwise specified
case
Parameter Test Conditions Symbol Value Unit
Junction case R
Electrical Characteristics
T
= 25°C, unless otherwise specified
case
Parameter Test Conditions Symbol Min Typ Max Unit Transistor Collector cut-off current VCE = 700 V I
VCE = 700 V; T
Collector-emitter breakdown voltage (figure 1)
IC = 300 mA; L = 125 mH; I
measure
= 100 mA Emitter-base breakdown voltage IE = 1 mA V Collector-emitter saturation voltage IC = 0.3 A; IB = 0.1 A V Base-emitter saturation voltage IC = 0.3 A; IB = 0.1 A V DC forward current transfer ratio VCE = 2 V; IC = 10 mA h
VCE = 2 V; IC = 0.3 A h VCE = 5 V; IC = 2 A h
Collector-emitter working voltage VS = 50 V; L = 1 mH; IC = 2 A;
I
= 0.7 A; –IB2 = 0.2 A;
B1
–VBB = 5 V
Dynamic saturation voltage IC = 1 A; IB = 0.2 A; t = 1 ms V
IC = 1 A; IB = 0.2 A; t = 3 ms V
Gain bandwidth product IC = 200 mA; VCE = 10 V;
f = 1 MHz Free-wheel diode Forward voltage IF = 0.7 A V
= 150°C I
case
V
(BR)CEO
(BR)EBO
V
CEsatdyn CEsatdyn
thJC
CES CES
CEsat BEsat
FE FE FE
CEW
f
T
F
5 K/W
50
m
0.5 mA
400 V
11 V
0.1 0.2 V
0.9 1 V 10 10
4 6
500 V
15 V
4 V
4 MHz
1.2 V
A
Switching Characteristics
T
= 25°C, unless otherwise specified
case
Parameter Test Conditions Symbol Min Typ Max Unit Application specific switching time measured with Nylos3 t Resistive load (figure 2) Turn on time IC = 330 mA; IB1 = 85 mA; t Storage time Fall time t
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–IB2 = 170 mA; VS = 250 V
t
on
x
0.75
0.25
s
f
Document Number 86505
3
0.4
Rev. 1, 20–Jan–99
m
s
m
s
m
s
m
s
94 8863
3 Pulses
t
p
+
T tp+
V
S2
0.1 10 ms
+
10 V
IBw
BUD700D
Vishay Telefunken
I
C
I
measure
I
C
5
ICL
C
VS1+
0to30V
V
(BR)CEO
I
(BR)R
+
100 m
V
CE
V
(BR)CEO
W
94 8852
I
B1
Figure 1. Test circuit for V
I
B
I
B1
(BR)CE0
0
t
–I
R
C
I
C
B2
(1)
I
V
I
B
R
B
V
BB
+
CE
V
CC
(1) Fast electronic switch
Figure 2. Test circuit for switching characteristics – resistive load
C
0.9 I
0.1 I
C
C
t
r
t
d
t
on
t
s
t
off
t
t
f
Document Number 86505 Rev. 1, 20–Jan–99
www.vishay.de FaxBack +1-408-970-5600
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