查询BUD700D供应商
Silicon NPN High Voltage Switching Transistor
Features
D
Monolithic integrated C-E-free-wheel diode
D
Simple-sWitch-Off Transistor (SWOT)
D
HIGH SPEED technology
D
Planar passivation
D
100 kHz switching rate
Applications
Electronic lamp ballast circuits
D
Very low switching losses
D
Very low dynamic saturation
D
Very low operating temperature
D
Optimized RBSOA
D
High reverse voltage
BUD700D
Vishay Telefunken
1
1
2
3
BUD700D
1 Base 2 Collector 3 Emitter
94 8964
BUD700D –SMD
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings
T
= 25°C, unless otherwise specified
case
Parameter Test Conditions Symbol Value Unit
Collector-emitter voltage V
V
Emitter-base voltage V
Collector current I
Collector peak current I
Base current I
Base peak current I
Total power dissipation T
Junction temperature T
Storage temperature range T
≤ 50°C P
case
V
3
CEO
CEW
CES
EBO
C
CM
B
BM
tot
j
stg
2
94 8965
400 V
500 V
700 V
11 V
2 A
3 A
0.75 A
1 A
20 W
150
–65 to +150
°
C
°
C
Document Number 86505
Rev. 1, 20–Jan–99
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BUD700D
Vishay Telefunken
Maximum Thermal Resistance
T
= 25°C, unless otherwise specified
case
Parameter Test Conditions Symbol Value Unit
Junction case R
Electrical Characteristics
T
= 25°C, unless otherwise specified
case
Parameter Test Conditions Symbol Min Typ Max Unit
Transistor
Collector cut-off current VCE = 700 V I
VCE = 700 V; T
Collector-emitter breakdown
voltage (figure 1)
IC = 300 mA; L = 125 mH;
I
measure
= 100 mA
Emitter-base breakdown voltage IE = 1 mA V
Collector-emitter saturation voltage IC = 0.3 A; IB = 0.1 A V
Base-emitter saturation voltage IC = 0.3 A; IB = 0.1 A V
DC forward current transfer ratio VCE = 2 V; IC = 10 mA h
VCE = 2 V; IC = 0.3 A h
VCE = 5 V; IC = 2 A h
Collector-emitter working voltage VS = 50 V; L = 1 mH; IC = 2 A;
I
= 0.7 A; –IB2 = 0.2 A;
B1
–VBB = 5 V
Dynamic saturation voltage IC = 1 A; IB = 0.2 A; t = 1 ms V
IC = 1 A; IB = 0.2 A; t = 3 ms V
Gain bandwidth product IC = 200 mA; VCE = 10 V;
f = 1 MHz
Free-wheel diode
Forward voltage IF = 0.7 A V
= 150°C I
case
V
(BR)CEO
(BR)EBO
V
CEsatdyn
CEsatdyn
thJC
CES
CES
CEsat
BEsat
FE
FE
FE
CEW
f
T
F
5 K/W
50
m
0.5 mA
400 V
11 V
0.1 0.2 V
0.9 1 V
10
10
4 6
500 V
15 V
4 V
4 MHz
1.2 V
A
Switching Characteristics
T
= 25°C, unless otherwise specified
case
Parameter Test Conditions Symbol Min Typ Max Unit
Application specific switching time
measured with Nylos3 t
Resistive load (figure 2)
Turn on time IC = 330 mA; IB1 = 85 mA; t
Storage time
Fall time t
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–IB2 = 170 mA; VS = 250 V
t
on
x
0.75
0.25
s
f
Document Number 86505
3
0.4
Rev. 1, 20–Jan–99
m
s
m
s
m
s
m
s
94 8863
3 Pulses
t
p
+
T
tp+
V
S2
0.1
10 ms
+
10 V
IBw
BUD700D
Vishay Telefunken
I
C
I
measure
I
C
5
ICL
C
VS1+
0to30V
V
(BR)CEO
I
(BR)R
+
100 m
V
CE
V
(BR)CEO
W
94 8852
I
B1
Figure 1. Test circuit for V
I
B
I
B1
(BR)CE0
0
t
–I
R
C
I
C
B2
(1)
I
V
I
B
R
B
V
BB
+
CE
V
CC
(1) Fast electronic switch
Figure 2. Test circuit for switching characteristics – resistive load
C
0.9 I
0.1 I
C
C
t
r
t
d
t
on
t
s
t
off
t
t
f
Document Number 86505
Rev. 1, 20–Jan–99
www.vishay.de • FaxBack +1-408-970-5600
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