VISHAY BUD636A User Manual

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Silicon NPN High Voltage Switching Transistor

Features

D

Simple-sWitch-Off Transistor (SWOT)

D

HIGH SPEED technology

D

Planar passivation

D

100 kHz switching rate

D

Very low switching losses

Applications

Electronic lamp ballast circuits
Switch-mode power supplies

D

Very low dynamic saturation

D

Very low operating temperature

D

Optimized RBSOA

D

High reverse voltage

BUD636A

Vishay Telefunken

1

1

2

3

BUD636A

1 Base 2 Collector 3 Emitter

94 8964

BUD636A –SMD

1 Base 2 Collector 3 Emitter

Absolute Maximum Ratings

T

= 25°C, unless otherwise specified

case

Parameter Test Conditions Symbol Value Unit

Collector-emitter voltage V

V

Emitter-base voltage V
Collector current I
Collector peak current I
Base current I
Base peak current I
Total power dissipation T
Junction temperature T
Storage temperature range T

≤ 25°C P

case

V

3

CEO

CEW

CES
EBO

C

CM

B

BM

tot

j

stg

2

94 8965

450 V
550 V

1000 V

11 V

5 A

7.5 A

2.5 A
4 A

40 W

150

–65 to +150

°

C

°

C

Document Number 86504
Rev. 2, 20–Jan–99

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1 (9)

BUD636A

g

g

yg

C B1

C B1

C B1 B2

C B1 B2

Vishay Telefunken

Maximum Thermal Resistance

T

= 25°C, unless otherwise specified

case

Parameter Test Conditions Symbol Value Unit

Junction case R

Electrical Characteristics

T

= 25°C, unless otherwise specified

case

Parameter Test Conditions Symbol Min Typ Max Unit

Collector cut-off current V

Collector-emitter breakdown
voltage (figure 1)

Emitter-base breakdown voltage IE = 1 mA V
Collector-emitter saturation voltage IC = 0.8 A; IB = 0.2 A V

Base-emitter saturation voltage IC = 0.8 A; IB = 0.2 A V

DC forward current transfer ratio VCE = 2 V; IC = 10 mA h

Collector-emitter working voltage VS = 50 V; L = 1 mH; IC = 5 A;

Dynamic saturation voltage IC = 2.5 A; IB = 0.5 A, t = 1 ms V

Gain bandwidth product IC = 200 mA; VCE = 10 V;

= 1000 V I

CES

V

= 1000 V; T

CES

IC = 300 mA; L = 125 mH;
I

measure

= 100 mA

= 150°C I

case

V

(BR)CEO

(BR)EBO

IC = 2.5 A; IB = 0.8 A V

IC = 2.5 A; IB = 0.8 A V

VCE = 2 V; IC = 0.8 A h
VCE = 2 V; IC = 2.5 A h
VCE = 5 V; IC = 5 A h

V
IB1 = 1.7 A; –IB2 = 0.5 A;
–VBB = 5 V

CEsatdyn

IC = 2.5 A; IB = 0.5 A; t = 3 ms V

CEsatdyn

f = 1 MHz

thJC

CES
CES

CEsat
CEsat
BEsat
BEsat

FE
FE
FE
FE

CEW

f

T

3.12 K/W

50

m

0.5 mA

450 V

11 V

0.1 0.2 V

0.2 0.4 V

0.9 1 V
1 1.2 V

15 22
15 21

7 10
4 6

550 V

10 15 V

2.8 5 V

4 MHz

A

Switching Characteristics

T

= 25°C, unless otherwise specified

case

Parameter Test Conditions Symbol Min Typ Max Unit
Resistive load (figure 2)
Turn on time IC = 0.8 A; IB1 = 0.2 A; t
Storage time

–IB2 = 0.4 A; VS = 250 V

Fall time t
Turn on time IC = 2.5 A; IB1 = 0.5 A; t
Storage time

–IB2 = 1.3 A; VS = 250 V

Fall time t
Inductive load (figure 3)
Storage time IC = 0.8 A; IB1 = 0.2 A; –IB2 = 0.4 A; t

V

Fall time

= 300 V; L = 200 mH

clamp

Storage time IC = 2.5 A; IB1 = 0.5 A; –IB2 = 1.3 A; t

V

Fall time

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= 300 V; L = 200 mH

clamp

on

t

on

t

t

t

s

f

s

f

s

f

s

f

0.15 0.25
3 3.5

0.3 0.45

0.4 0.6

1.3 1.5

0.1 0.15

3 3.5

0.2 0.3

1.4 1.7

0.1 0.15

Document Number 86504

Rev. 2, 20–Jan–99

m

s

m

s

m

s

m

s

m

s

m

s

m

s

m

s

m

s

m

s

94 8863

3 Pulses

t

p

+

T
tp+

V

S2

0.1
10 ms

+

10 V

IBw

BUD636A

Vishay Telefunken

I

C

I

measure

I

C

5

ICL

C

VS1+

0to30V

V

(BR)CEO

I

(BR)R

+

100 m

V

CE

V

(BR)CEO

W

94 8852

I

B1

Figure 1. Test circuit for V

I

B

I

B1

(BR)CE0

0

t

–I

R

C

I

C

B2

(1)

I

V

I

B

R

B

V

BB

+

CE

V

CC

(1) Fast electronic switch

C

0.9 I

0.1 I

C

C

t

r

t

d

t

on

t

s

t

off

t

t

f

Document Number 86504
Rev. 2, 20–Jan–99

Figure 2. Test circuit for switching characteristics – resistive load

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BUD636A

Vishay Telefunken

94 8853

I

B

I

B1

–I

0.9 I

0.1 I

0

t

B2

I

C

C

C

L

C

(2)

I

C

(1)

I

B1

V

BB

I

B

R

B

+

V

CE

V

clamp

V

CC

t

(1) Fast electronic switch

t

r

s

t

(2) Fast recovery rectifier

Figure 3. Test circuit for switching characteristics – inductive load

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Document Number 86504

Rev. 2, 20–Jan–99

BUD636A

Vishay Telefunken

Typical Characteristics (T

6

5

4

3

C

CEsat

< I

< 2V

< 0.5 x I

B2

CEW

C

– Diagram

IB = 490 mA

C

I – Collector Current ( A )

95 10508

0.1 x I

2

V

1

0

0 100 200 300 400

VCE – Collector Emitter Voltage ( V )

Figure 4. V

5

4

3

= 25_C unless otherwise specified)

case

100

12.5 K/W

10

1

25 K/W

0.1

0.01

tot

P – Total Power Dissipation ( W )

0.001

95 10499

0 25 50 75 100

T

– Case Temperature ( °C )

case

500

600

Figure 7. P

10

0.6A

1A

2A

400 mA
290 mA

190 mA

1

50 K/W

vs.T

tot

3A

R

thJA

case

IC = 4A

3.12 K/W

= 135 K/W

125

150

2

C

I – Collector Current ( A )

1

0

04 81216

95 10512

VCE – Collector Emitter Voltage ( V )

Figure 5. IC vs. V

100

10

FE

h – Forward DC Current Transfer Ratio

1

0.001 0.01 0.1 1

95 10510

IC – Collector Current ( A )

10V

CE

5V

VCE = 2V

95 mA

49 mA

25V

0.1

20

10

0.01

0.01 0.1 1

CEsat

V – Collector Emitter Saturation Voltage ( V )

95 10513

IB – Base Current ( A )

Figure 8. V

100

Tj = 125°C

75°C

25°C

10

FE

h – Forward DC Current Transfer Ratio

1

0.001 0.01 0.1 1

95 10511

IC – Collector Current ( A )

CEsat

vs. I

10

B

10

Figure 6. hFE vs. I

Document Number 86504
Rev. 2, 20–Jan–99

C

Figure 9. hFE vs. I

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C

5 (9)

BUD636A

Vishay Telefunken

10

8

m

6

T

= 125°C

case

4

s

t – Storage Time ( s )

2

0

25°C

02468

95 10517 –I

Figure 10. ts vs. –IB2/I

10

8

m

6

4

s

t – Storage Time ( s )

2

0

0 0.8 1.6 2.4 3.2

95 10515

saturated switching
R–load
I

= 0.8A, I

C

B2/IB1

B1

B1

saturated switching
R–load
I

= 0.8A, I

C

T

case

B1

= 125°C

25°C

–I

B2/IB1

= 0.1A

= 0.2A

10

4.0

1.0

0.8

m

0.6
T

= 125°C

case

0.4

f

t – Fall Time ( s )

0.2

0

02468

95 10516 –I

Figure 12. tf vs. –IB2/I

1.0

0.8

m

0.6

T

= 125°C

case

0.4

f

t – Fall Time ( s )

0.2

0

0 0.8 1.6 2.4 3.2

95 10514

saturated switching
R–load
I

= 0.8A, I

C

B1

25°C

B2/IB1

B1

saturated switching
R–load
I

= 0.8A, I

C

B1

25°C

–IB2/I

B1

= 0.1A

= 0.2A

10

4.0

Figure 11. ts vs. –IB2/I

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B1

Figure 13. tf vs. –IB2/I

Document Number 86504

B1

Rev. 2, 20–Jan–99

Dimensions in mm

BUD636A

Vishay Telefunken

Document Number 86504
Rev. 2, 20–Jan–99

14292

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BUD636A

Vishay Telefunken

For ordering TO 252 add SMD to the type number (i.e. BUD636A –SMD)

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14293

Document Number 86504

Rev. 2, 20–Jan–99

BUD636A

Vishay Telefunken

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their

impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as

ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and

forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application

by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the

buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or

indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Document Number 86504
Rev. 2, 20–Jan–99

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: [phone], Fax number: 49 (0)7131 67 2423

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