VISHAY BUD636A User Manual

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查询BUD636A供应商

Silicon NPN High Voltage Switching Transistor

Features

D

Simple-sWitch-Off Transistor (SWOT)

D

HIGH SPEED technology

D

Planar passivation

D

100 kHz switching rate

D

Very low switching losses

Applications

Electronic lamp ballast circuits
Switch-mode power supplies

D

Very low dynamic saturation

D

Very low operating temperature

D

Optimized RBSOA

D

High reverse voltage

BUD636A

Vishay Telefunken

1

1

2

3

BUD636A

1 Base 2 Collector 3 Emitter

94 8964

BUD636A –SMD

1 Base 2 Collector 3 Emitter

Absolute Maximum Ratings

T

= 25°C, unless otherwise specified

case

Parameter Test Conditions Symbol Value Unit

Collector-emitter voltage V

V

Emitter-base voltage V
Collector current I
Collector peak current I
Base current I
Base peak current I
Total power dissipation T
Junction temperature T
Storage temperature range T

≤ 25°C P

case

V

3

CEO

CEW

CES
EBO

C

CM

B

BM

tot

j

stg

2

94 8965

450 V
550 V

1000 V

11 V

5 A

7.5 A

2.5 A
4 A

40 W

150

–65 to +150

°

C

°

C

Document Number 86504
Rev. 2, 20–Jan–99

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BUD636A

g

g

yg

C B1

C B1

C B1 B2

C B1 B2

Vishay Telefunken

Maximum Thermal Resistance

T

= 25°C, unless otherwise specified

case

Parameter Test Conditions Symbol Value Unit

Junction case R

Electrical Characteristics

T

= 25°C, unless otherwise specified

case

Parameter Test Conditions Symbol Min Typ Max Unit

Collector cut-off current V

Collector-emitter breakdown
voltage (figure 1)

Emitter-base breakdown voltage IE = 1 mA V
Collector-emitter saturation voltage IC = 0.8 A; IB = 0.2 A V

Base-emitter saturation voltage IC = 0.8 A; IB = 0.2 A V

DC forward current transfer ratio VCE = 2 V; IC = 10 mA h

Collector-emitter working voltage VS = 50 V; L = 1 mH; IC = 5 A;

Dynamic saturation voltage IC = 2.5 A; IB = 0.5 A, t = 1 ms V

Gain bandwidth product IC = 200 mA; VCE = 10 V;

= 1000 V I

CES

V

= 1000 V; T

CES

IC = 300 mA; L = 125 mH;
I

measure

= 100 mA

= 150°C I

case

V

(BR)CEO

(BR)EBO

IC = 2.5 A; IB = 0.8 A V

IC = 2.5 A; IB = 0.8 A V

VCE = 2 V; IC = 0.8 A h
VCE = 2 V; IC = 2.5 A h
VCE = 5 V; IC = 5 A h

V
IB1 = 1.7 A; –IB2 = 0.5 A;
–VBB = 5 V

CEsatdyn

IC = 2.5 A; IB = 0.5 A; t = 3 ms V

CEsatdyn

f = 1 MHz

thJC

CES
CES

CEsat
CEsat
BEsat
BEsat

FE
FE
FE
FE

CEW

f

T

3.12 K/W

50

m

0.5 mA

450 V

11 V

0.1 0.2 V

0.2 0.4 V

0.9 1 V
1 1.2 V

15 22
15 21

7 10
4 6

550 V

10 15 V

2.8 5 V

4 MHz

A

Switching Characteristics

T

= 25°C, unless otherwise specified

case

Parameter Test Conditions Symbol Min Typ Max Unit
Resistive load (figure 2)
Turn on time IC = 0.8 A; IB1 = 0.2 A; t
Storage time

–IB2 = 0.4 A; VS = 250 V

Fall time t
Turn on time IC = 2.5 A; IB1 = 0.5 A; t
Storage time

–IB2 = 1.3 A; VS = 250 V

Fall time t
Inductive load (figure 3)
Storage time IC = 0.8 A; IB1 = 0.2 A; –IB2 = 0.4 A; t

V

Fall time

= 300 V; L = 200 mH

clamp

Storage time IC = 2.5 A; IB1 = 0.5 A; –IB2 = 1.3 A; t

V

Fall time

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= 300 V; L = 200 mH

clamp

on

t

on

t

t

t

s

f

s

f

s

f

s

f

0.15 0.25
3 3.5

0.3 0.45

0.4 0.6

1.3 1.5

0.1 0.15

3 3.5

0.2 0.3

1.4 1.7

0.1 0.15

Document Number 86504

Rev. 2, 20–Jan–99

m

s

m

s

m

s

m

s

m

s

m

s

m

s

m

s

m

s

m

s

94 8863

3 Pulses

t

p

+

T
tp+

V

S2

0.1
10 ms

+

10 V

IBw

BUD636A

Vishay Telefunken

I

C

I

measure

I

C

5

ICL

C

VS1+

0to30V

V

(BR)CEO

I

(BR)R

+

100 m

V

CE

V

(BR)CEO

W

94 8852

I

B1

Figure 1. Test circuit for V

I

B

I

B1

(BR)CE0

0

t

–I

R

C

I

C

B2

(1)

I

V

I

B

R

B

V

BB

+

CE

V

CC

(1) Fast electronic switch

C

0.9 I

0.1 I

C

C

t

r

t

d

t

on

t

s

t

off

t

t

f

Document Number 86504
Rev. 2, 20–Jan–99

Figure 2. Test circuit for switching characteristics – resistive load

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