VISHAY BUD620 User Manual

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查询BUD620供应商

Silicon NPN High Voltage Switching Transistor

Features

D

Simple-sWitch-Off Transistor (SWOT)

D

HIGH SPEED technology

D

Planar passivation

D

100 kHz switching rate

D

Very low switching losses

Applications

Electronic lamp ballast circuits
Switch-mode power supplies

D

Very low dynamic saturation

D

Very low operating temperature

D

Optimized RBSOA

D

High reverse voltage

BUD620

Vishay Telefunken

1

1

2

3

94 8964

BUD620

1 Base 2 Collector 3 Emitter

1 Base 2 Collector 3 Emitter

Absolute Maximum Ratings

T

= 25°C, unless otherwise specified

case

Parameter Test Conditions Symbol Value Unit

Collector-emitter voltage V

V

Emitter-base voltage V
Collector current I
Collector peak current I
Base current I
Base peak current I
Total power dissipation T
Junction temperature T
Storage temperature range T

≤ 60°C P

case

3

BUD620 –SMD

CEO

CEW

V

CES
EBO

C

CM

B

BM

tot

j

stg

–65 to +150

2

94 8965

400 V
500 V
700 V

9 V
4 A
6 A
2 A
3 A

25 W

150

°
°

C
C

Document Number 86502
Rev. 2, 20–Jan–99

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BUD620

g

yg

Vishay Telefunken

Maximum Thermal Resistance

T

= 25°C, unless otherwise specified

case

Parameter Test Conditions Symbol Value Unit

Junction case R

Electrical Characteristics

T

= 25°C, unless otherwise specified

case

Parameter Test Conditions Symbol Min Typ Max Unit

Collector cut-off current VCE = 700 V I

VCE = 700 V; T

Collector-emitter breakdown
voltage (figure 1)

IC = 300 mA; L = 125 mH;
I

measure

= 100 mA
Emitter-base breakdown voltage IE = 1 mA V
Collector-emitter saturation IC = 0.6 A; IB = 0.15 A V

voltage

IC = 2 A; IB = 0.7 A V

Base-emitter saturation voltage IC = 0.6 A; IB = 0.15 A V

IC = 2 A; IB = 0.7 A V

DC forward current transfer ratio VCE = 2 V; IC = 10 mA h

VCE = 2 V; IC = 0.7 A h
VCE = 2 V; IC = 2 A h
VCE = 5 V; IC = 4 A h

Collector-emitter working voltage VS = 50 V; L = 1 mH; IC = 4 A;

IB1 = 1.4 A; –IB2 = 0.4 A;
–VBB = 5 V

Dynamic saturation voltage IC = 2 A; IB = 0.4 A; t = 1 ms V

IC = 2 A; IB = 0.4 A; t = 3 ms V

Gain bandwidth product IC = 200 mA; VCE = 10 V; f = 1

MHz

= 150°C I

case

V

(BR)CEO

(BR)EBO

V

CEsatdyn
CEsatdyn

thJC

CES
CES

CEsat
CEsat
BEsat
BEsat

FE
FE
FE
FE

CEW

f

T

3.6 K/W

50

m

0.5 mA

400 V

9 V

0.1 0.2 V

0.2 0.3 V

0.9 1.1 V
1 1.2 V

15
15

7
4

500 V

10 15 V

2 4 V
8 MHz

A

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Document Number 86502

Rev. 2, 20–Jan–99

BUD620

C B1

C B1

C B1 B2

C B1 B2

Vishay Telefunken

Switching Characteristics

T

= 25°C, unless otherwise specified

case

Parameter Test Conditions Symbol Min Typ Max Unit
Resistive load (figure 2)
Turn on time IC = 0.6 A; IB1 = 0.15 A; t
Storage time

–IB2 = 0.3 A; VS = 250 V

Fall time t
Turn on time IC = 2 A; IB1 = 0.4 A; t
Storage time

–IB2 = 1 A; VS = 250 V

Fall time t
Inductive load (figure 3)
Storage time IC = 0.6 A; IB1 = 0.15 A; –IB2 = 0.3 A; t

V

Fall time

= 300 V; L = 200 mH

clamp

Storage time IC = 2 A; IB1 = 0.4 A; –IB2 = 1 A; t

V

Fall time

= 300 V; L = 200 mH

clamp

on

t

on

t

t

t

s

f

s

f

s

f

s

f

0.15 0.25

2.1 3

0.2 0.4

0.4 0.6
1 1.2

0.1 0.15

2.2 3

0.2 0.3
1 1.3

0.1 0.15

m

s

m

s

m

s

m

s

m

s

m

s

m

s

m

s

m

s

m

s

94 8863

3 Pulses

t

p

+

T
tp+

V

S2

0.1
10 ms

+

10 V

I

IBw

C

5

ICL

VS1+

0to30V

I

(BR)R

Figure 1. Test circuit for V

V

(BR)CEO

C

+

100 m

(BR)CE0

I

C

I

measure

V

CE

V

(BR)CEO

W

Document Number 86502
Rev. 2, 20–Jan–99

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