g
查询BUD616A供应商
Silicon NPN High Voltage Switching Transistor
Features
D
Simple-sWitch-Off Transistor (SWOT)
D
HIGH SPEED technology
D
Planar passivation
D
100 kHz switching rate
D
Very low switching losses
Applications
Electronic lamp ballast circuits
Switch-mode power supplies
D
Very low dynamic saturation
D
Very low operating temperature
D
Optimized RBSOA
D
High reverse voltage
BUD616A
Vishay Telefunken
1
1
2
3
BUD616A
1 Emitter 2 Collector 3 Base
94 8964
BUD616A –SMD
1 Emitter 2 Collector 3 Base
Absolute Maximum Ratings
T
= 25°C, unless otherwise specified
case
Parameter Test Conditions Symbol Value Unit
Collector-emitter voltage V
Emitter-base voltage V
Collector current I
Collector peak current I
Base current I
Base peak current I
Total power dissipation T
Junction temperature T
Storage temperature range T
≤ 50°C P
case
V
3
CEO
CES
EBO
C
CM
B
BM
tot
j
stg
2
94 8965
450 V
1000 V
12 V
1.6 A
2.4 A
0.8 A
1.2 A
20 W
150
–65 to +150
°
C
°
C
Document Number 86501
Rev. 1, 20–Jan–99
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BUD616A
g
Vishay Telefunken
Maximum Thermal Resistance
T
= 25°C, unless otherwise specified
case
Parameter Test Conditions Symbol Value Unit
Junction case R
Electrical Characteristics
T
= 25°C, unless otherwise specified
case
Parameter Test Conditions Symbol Min Typ Max Unit
Collector cut-off current V
Collector-emitter breakdown
voltage (figure 1)
Emitter-base breakdown voltage IE = 1 mA V
Collector-emitter saturation IC = 0.25 A; IB = 65 mA V
voltage
Base-emitter saturation voltage IC = 0.25 A; IB = 65 mA V
DC forward current transfer ratio VCE = 5 V; IC = 0.2 mA h
= 1000 V I
CES
V
= 1000 V; T
CES
IC = 300 mA; L = 125 mH;
I
measure
= 100 mA
= 125°C I
case
V
(BR)CEO
(BR)EBO
IC = 0.8 A; IB = 250 mA V
IC = 0.8 A; IB = 250 mA V
VCE = 5 V; IC = 300 mA h
VCE = 5 V; IC = 480 mA h
VCE = 5 V; IC = 1.6 A h
thJC
CES
CES
CEsat
CEsat
BEsat
BEsat
FE
FE
FE
FE
5 K/W
50
m
0.5 mA
450 V
12 V
0.2 V
0.4 V
1 V
1.2 V
17
25
12
4
A
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Document Number 86501
Rev. 1, 20–Jan–99
BUD616A
C B1
C B1
I
130 mA; V
300 V
I
V
300 V
Vishay Telefunken
Switching Characteristics
T
= 25°C, unless otherwise specified
case
Parameter Test Conditions Symbol Min Typ Max Unit
Resistive load (figure 2)
Turn on time IC = 250 mA; IB1 = 65 mA; t
Storage time
–IB2 = 130 mA; VS = 250 V
Fall time t
Turn on time IC = 0.8 A; IB1 = 160 mA; t
Storage time
–IB2 = 0.4 A; VS = 250 V
Fall time t
Inductive load (figure 3)
Storage time IC = 250 mA; IB1 = 65 mA;
Fall time
=
B2
L = 200 mH
clamp
=
;
–
Storage time IC = 0.8 A; IB1 = 160 mA;
–
Fall time
= 0.4 A;
B2
L = 200 mH
clamp
=
;
on
t
on
t
t
t
t
t
s
f
s
f
s
f
s
f
0.15
0.2
5
0.4
1
2.5
0.2
5
0.3
2.5
m
s
m
s
m
s
m
s
m
s
m
s
m
s
m
s
m
s
m
s
94 8863
3 Pulses
t
p
+
T
tp+
V
S2
0.1
10 ms
+
10 V
I
IBw
C
5
ICL
VS1+
0to30V
I
(BR)R
Figure 1. Test circuit for V
V
(BR)CEO
C
+
100 m
(BR)CE0
I
C
I
measure
V
CE
V
(BR)CEO
W
Document Number 86501
Rev. 1, 20–Jan–99
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BUD616A
Vishay Telefunken
94 8852
I
B
I
B1
I
B1
94 8853
0
t
–I
R
C
I
C
B2
(1)
I
V
I
B
R
B
V
BB
+
CE
V
CC
(1) Fast electronic switch
Figure 2. Test circuit for switching characteristics – resistive load
C
0.9 I
0.1 I
I
B
I
B1
C
C
t
r
t
d
t
on
t
s
t
off
t
t
f
–I
0.9 I
0.1 I
0
t
B2
I
C
C
C
L
C
(2)
I
C
(1)
I
B1
V
BB
I
B
R
B
+
V
CE
V
clamp
V
CC
t
(1) Fast electronic switch
t
r
s
t
(2) Fast recovery rectifier
Figure 3. Test circuit for switching characteristics – inductive load
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Document Number 86501
Rev. 1, 20–Jan–99
BUD616A
Vishay Telefunken
Typical Characteristics (T
2.0
1.8
1.6
1.4
1.2
1.0
< I
C
CEsat
B2
< 2 V
< 0.5 x I
CEW
C
– Diagram
IB=0.05A
0.1 x I
0.8
0.6
C
0.4
I – Collector Current ( A )
0.2
V
0
0 100 200 300 400 500 600
VCE – Collector Emitter Voltage ( V )13666
Figure 4. V
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
C
0.4
I – Collector Current ( A )
0.2
0
012345678910
VCE – Collector Emitter Voltage ( V )13668
= 25_C unless otherwise specified)
case
100.00
5K/W
10.00
1.00
25K/W
0.10
tot
P – Total Power Dissipation ( W )
0.01
0 25 50 75 100 125 150
T
– Case Temperature ( °C )13667
case
Figure 7. P
0.3A
0.2A
0.15A
0.1A
10.00
1.00
0.10
IC=0.2A
0.01
CEsat
V – Collector Emitter Saturation Voltage ( V )
0.001 0.010 0.100 1.000 10.000
IB – Base Current ( A )13669
12.5K/W
50K/W
R
thJA
vs.T
tot
0.5A
=135K/W
case
2A
1.5A
1A
Figure 5. IC vs. V
100
10
FE
h – Forward DC Current Transfer Ratio
1
0.01 0.10 1.00 10.00
IC – Collector Current ( A )13670
Figure 6. hFE vs. I
Document Number 86501
Rev. 1, 20–Jan–99
CE
VCE=2V
C
10V
5V
Figure 8. V
FE
h – Forward DC Current Transfer Ratio
100
10
T
= 125°C
j
75°C
25°C
VCE=2V
1
0.01 0.10 1.00 10.00
IC – Collector Current ( A )13671
Figure 9. hFE vs. I
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CEsat
vs. I
C
B
5 (9)
BUD616A
Vishay Telefunken
m
s
t – Storage Time ( s )
13672
m
s
t – Storage Time ( s )
13674
12
10
saturated switching
R-load
I
= 0.3A, IB1 = 35mA
C
8
6
T
4
2
T
= 25°C
case
case
= 125°C
0
0123456
–IB2/I
B1
Figure 10. ts vs. –IB2/I
B1
12
10
saturated switching
R-load
= 0.3A, IB1 = 70mA
I
C
8
6
T
= 125°C
case
4
2
T
= 25°C
case
0
01234
–IB2/I
B1
m
f
t – Fall Time ( s )
13673
m
f
t – Fall Time ( s )
13675
1.0
saturated switching
0.8
R-load
I
= 0.3A, IB1 = 35mA
C
0.6
0.4
T
case
= 125°C
0.2
T
= 25°C
case
0
0123456
–IB2/I
B1
Figure 12. tf vs. –IB2/I
B1
1.0
saturated switching
0.8
R-load
= 0.3A, IB1 = 70mA
I
C
0.6
T
= 125°C
0.4
case
0.2
T
= 25°C
case
0
01234
–IB2/I
B1
Figure 11. ts vs. –IB2/I
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B1
Figure 13. tf vs. –IB2/I
Document Number 86501
B1
Rev. 1, 20–Jan–99
Dimensions in mm
BUD616A
Vishay Telefunken
Document Number 86501
Rev. 1, 20–Jan–99
14294
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BUD616A
Vishay Telefunken
For ordering TO 252 add SMD to the type number (i.e. BUD616A –SMD)
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14295
Document Number 86501
Rev. 1, 20–Jan–99
BUD616A
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Document Number 86501
Rev. 1, 20–Jan–99
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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