VISHAY BUD616A User Manual

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查询BUD616A供应商

Silicon NPN High Voltage Switching Transistor

Features

D

Simple-sWitch-Off Transistor (SWOT)

D

HIGH SPEED technology

D

Planar passivation

D

100 kHz switching rate

D

Very low switching losses

Applications

Electronic lamp ballast circuits
Switch-mode power supplies

D

Very low dynamic saturation

D

Very low operating temperature

D

Optimized RBSOA

D

High reverse voltage

BUD616A

Vishay Telefunken

1

1

2

3

BUD616A

1 Emitter 2 Collector 3 Base

94 8964

BUD616A –SMD

1 Emitter 2 Collector 3 Base

Absolute Maximum Ratings

T

= 25°C, unless otherwise specified

case

Parameter Test Conditions Symbol Value Unit

Collector-emitter voltage V

Emitter-base voltage V
Collector current I
Collector peak current I
Base current I
Base peak current I
Total power dissipation T
Junction temperature T
Storage temperature range T

≤ 50°C P

case

V

3

CEO
CES
EBO

C

CM

B

BM

tot

j

stg

2

94 8965

450 V

1000 V

12 V

1.6 A

2.4 A

0.8 A

1.2 A
20 W

150

–65 to +150

°

C

°

C

Document Number 86501
Rev. 1, 20–Jan–99

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BUD616A

g

Vishay Telefunken

Maximum Thermal Resistance

T

= 25°C, unless otherwise specified

case

Parameter Test Conditions Symbol Value Unit

Junction case R

Electrical Characteristics

T

= 25°C, unless otherwise specified

case

Parameter Test Conditions Symbol Min Typ Max Unit

Collector cut-off current V

Collector-emitter breakdown
voltage (figure 1)

Emitter-base breakdown voltage IE = 1 mA V
Collector-emitter saturation IC = 0.25 A; IB = 65 mA V

voltage
Base-emitter saturation voltage IC = 0.25 A; IB = 65 mA V

DC forward current transfer ratio VCE = 5 V; IC = 0.2 mA h

= 1000 V I

CES

V

= 1000 V; T

CES

IC = 300 mA; L = 125 mH;
I

measure

= 100 mA

= 125°C I

case

V

(BR)CEO

(BR)EBO

IC = 0.8 A; IB = 250 mA V

IC = 0.8 A; IB = 250 mA V

VCE = 5 V; IC = 300 mA h
VCE = 5 V; IC = 480 mA h
VCE = 5 V; IC = 1.6 A h

thJC

CES
CES

CEsat
CEsat
BEsat
BEsat

FE
FE
FE
FE

5 K/W

50

m

0.5 mA

450 V

12 V

0.2 V

0.4 V
1 V

1.2 V

17
25
12

4

A

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Document Number 86501

Rev. 1, 20–Jan–99

BUD616A

C B1

C B1

I

130 mA; V

300 V

I

V

300 V

Vishay Telefunken

Switching Characteristics

T

= 25°C, unless otherwise specified

case

Parameter Test Conditions Symbol Min Typ Max Unit
Resistive load (figure 2)
Turn on time IC = 250 mA; IB1 = 65 mA; t
Storage time

–IB2 = 130 mA; VS = 250 V

Fall time t
Turn on time IC = 0.8 A; IB1 = 160 mA; t
Storage time

–IB2 = 0.4 A; VS = 250 V

Fall time t
Inductive load (figure 3)
Storage time IC = 250 mA; IB1 = 65 mA;

Fall time

=

B2

L = 200 mH

clamp

=

;

–

Storage time IC = 0.8 A; IB1 = 160 mA;

–

Fall time

= 0.4 A;

B2

L = 200 mH

clamp

=

;

on

t

on

t

t
t
t
t

s

f

s

f

s

f

s

f

0.15

0.2
5

0.4
1

2.5

0.2

5

0.3

2.5

m

s

m

s

m

s

m

s

m

s

m

s

m

s

m

s

m

s

m

s

94 8863

3 Pulses

t

p

+

T
tp+

V

S2

0.1
10 ms

+

10 V

I

IBw

C

5

ICL

VS1+

0to30V

I

(BR)R

Figure 1. Test circuit for V

V

(BR)CEO

C

+

100 m

(BR)CE0

I

C

I

measure

V

CE

V

(BR)CEO

W

Document Number 86501
Rev. 1, 20–Jan–99

www.vishay.de • FaxBack [phone]

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