VISHAY BPW 96C TEL Datasheet

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94 8391

Silicon NPN Phototransistor

DESCRIPTION

BPW96 is a silicon NPN phototransistor with high radiant
sensitivity in clear, T-1¾ plastic package. It is sensitive to
visible and near infrared radiation.

BPW96B, BPW96C

Vishay Semiconductors

FEATURES

• Package type: leaded

• Package form: T-1¾

• Dimensions (in mm): Ø 5

• Leads with stand-off

• High photo sensitivity

• High radiant sensitivity

• Suitable for visible and near infrared radiation

• Fast response times

• Angle of half sensitivity: ϕ = ± 20°

• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC

Note

** Please see document “Vishay Material Category Policy”:

www.vishay.com/doc?99902

APPLICATIONS

• Detector in electronic control and drive circuits

PRODUCT SUMMARY

COMPONENT Ica (mA) ϕ (deg) λ

BPW96B 2.5 to 7.5 ± 20 450 to 1080

BPW96C 4.5 to 15 ± 20 450 to 1080

Note

• Test condition see table “Basic Characteristics”

0.1

(nm)

ORDERING INFORMATION

ORDERING CODE PACKAGING REMARKS PACKAGE FORM

BPW96B Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾

BPW96C Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾

Note

• MOQ: minimum order quantity

ABSOLUTE MAXIMUM RATINGS (T

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Collector emitter voltage V

Emitter collector voltage V

Collector current I

Collector peak current t

Power dissipation T

Junction temperature T

Operating temperature range T

Storage temperature range T

Soldering temperature t ≤ 3 s T

Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm

= 25 °C, unless otherwise specified)

amb

/T ≤ 0.5, tp ≤ 10 ms I

p

≤ 47 °C P

amb

2

R

CEO

ECO

C

CM

amb

stg

sd

thJA

70 V

5V

50 mA

100 mA

V

j

150 mW

100 °C

- 40 to + 100 °C

- 40 to + 100 °C

260 °C

350 K/W

Rev. 1.8, 23-Aug-11

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1

Document Number: 81532

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0

40

80

120

160

200

P

V

- Power Dissipation (mW)

T

amb

- Ambient Temperature (°C)

100806040200

94 8300

R

thJA

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature

BPW96B, BPW96C

Vishay Semiconductors

BASIC CHARACTERISTICS (T

= 25 °C, unless otherwise specified)

amb

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

Collector emitter breakdown voltage I

Collector emitter dark current V

Collector emitter capacitance V

CE

= 1 mA V

C

= 20 V, E = 0 I

CE

= 5 V, f = 1 MHz, E = 0 C

(BR)CEO

CEO

CEO

70 V

1 200 nA

3pF

Angle of half sensitivity ϕ ± 20 deg

Wavelength of peak sensitivity λ

Range of spectral bandwidth λ

E

= 1 mW/cm2, λ = 950 nm,

Collector emitter saturation voltage

Turn-on time V

Turn-off time V

Cut-off frequency V

e

I

= 0.1 mA

C

= 5 V, IC = 5 mA, RL = 100 Ω t

S

= 5 V, IC = 5 mA, RL = 100 Ω t

S

= 5 V, IC = 5 mA, RL = 100 Ω f

S

V

p

0.1

CEsat

on

off

c

850 nm

450 to 1080 nm

0.3 V

2.0 μs

2.3 μs

180 kHz

TYPE DEDICATED CHARACTERISTICS

PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT

Collector light current

= 1 mW/cm2, λ = 950 nm,

E

e

V

= 5 V

CE

BPW96B I

BPW96C I

ca

ca

2.5 4.5 7.5 mA

4.5 8 15 mA

Rev. 1.8, 23-Aug-11

2

Document Number: 81532

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

www.vishay.com

20

100

40 60 80

10

10

1

10

2

10

3

10

4

VCE = 20 V

T

amb

- Ambient Temperature (°C)

I

CEO

- Collector Dark Current (nA)

94 8304

0

0.6

0.8

1.0

1.2

1.4

2.0

20 40 60 80

100

1.6

1.8

λ

94 8239

T

amb

- Ambient Temperature (°C)

I

ca rel

- Relative Collector Current

VCE = 5 V
E

e

= 1 mW/cm

2

= 950 nm

0.01 0.1 1

0.01

0.1

1

10

10

94 8296

VCE=5V

λ = 950 nm

BPW96B

BPW96C

Ee- Irradiance (mW/cm2)

I - Collector Light Current (mA)

ca

BPW96B, BPW96C

Vishay Semiconductors

BASIC CHARACTERISTICS (T

= 25 °C, unless otherwise specified)

amb

Fig. 1 - Collector Dark Current vs. Ambient Temperature

10

BPW96B

Ee = 1 mW/cm²

0.5 mW/cm²

1

0.2 mW/cm²

0.1 mW/cm²

0.05 mW/cm²

ca

I - Collector Light Current (mA)

0.1

0.1 1 10

94 8297

VCE- Collector Emitter Voltage (V)

λ

=950nm

100

Fig. 4 - Collector Light Current vs. Collector Emitter Voltage

10

8

f = 1 MHz

Rev. 1.8, 23-Aug-11

6

4

2

0

CEO

C - Collector Emitter Capacitance (pF)

0.1 1 10

- Collector Emitter Voltage (V)

94 8301

Fig. 2 - Relative Collector Current vs. Ambient Temperature

Fig. 3 - Collector Light Current vs. Irradiance

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

Fig. 5 - Collector Emitter Capacitance vs. Collector Emitter Voltage

- Turn-on/Turn-off Time (µs)

off

/t

on

t

94 8293

Fig. 6 - Turn-on/Turn-off Time vs. Collector Current

3

V

CE

8

6

4

2

0

0 2 4 6 8 10 12 14

VCE = 5 V
R

= 100 Ω

L

λ = 950 nm

t

t

on

off

IC - Collector Current (mA)

Document Number: 81532

100

www.vishay.com

400 600 1000

0

0.2

0.4

0.6

0.8

1.0

S (λ)

rel

- Relative Spectral Sensitivity

λ - Wavelength (nm)

94 8348

800

BPW96B, BPW96C

Vishay Semiconductors

0°

10° 20°

30°

1.0

0.9

0.8

- Relative Radiant Sensitivity

0.7

rel

S

0.4 0.2 0

0.6

94 8299

Fig. 7 - Relative Spectral Sensitivity vs. Wavelength Fig. 8 - Relative Radiant Sensitivity vs. Angular Displacement

PACKAGE DIMENSIONS in millimeters

± 0.15

5.75

C

E

± 0.15

Ø 5

Chip position

40°

50°

60°

70°

80°

ϕ - Angular Displacement

± 0.5

35.3

Rev. 1.8, 23-Aug-11

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

± 0.15

12.3

± 0.3

8.6

± 0.25

1.5

7.6

+ 0.2

1

- 0.1

± 0.3

Drawing-No.: 6.544-5086.01-4

Issue:1; 01.07.96

96 12192

For technical questions, contact: [e-mail]

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

+ 0.2

0.8

- 0.1

+ 0.2

0.63

- 0.1

2.54 nom.

(4.8)

R 2.45 (sphere)

< 0.7

4

Area not plane

+ 0.15

0.5

technical drawings
according to DIN
specifications

Document Number: 81532

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Revision: 08-Feb-17

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Document Number: 91000