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Silicon PIN Photodiode
94 8480
DESCRIPTION
BPW41N is a PIN photodiode with high speed and high
radiant sensitivity in a black, side view plastic package with
daylight blocking filter. Filter bandwidth is matched with
900 nm to 950 nm IR emitters.
BPW41N
Vishay Semiconductors
FEATURES
• Package type: leaded
• Package form: side view
• Dimensions (in mm): 5 x 4 x 6.8
• Radiant sensitive area (in mm
• High radiant sensitivity
• Daylight blocking filter matched with 940 nm
emitters
• Fast response times
• Angle of half sensitivity: ϕ = ± 65°
• Compliant to RoHS Directive to 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• High speed detector for infrared radiation
• Infrared remote control and free air data transmission
systems, e.g. in combination with TSALxxxx series IR
emitters
2
): 7.5
PRODUCT SUMMARY
COMPONENT Ira (μA) ϕ (deg) λ
BPW41N 45 ± 65 870 to 1050
Note
• Test condition see table “Basic Characteristics”
0.5
(nm)
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
BPW41N Bulk MOQ: 4000 pcs, 4000 pcs/bulk Side view
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
Power dissipation T
Junction temperature T
Operating temperature range T
Storage temperature range T
Soldering temperature t ≤ 5 s T
Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm
= 25 °C, unless otherwise specified)
amb
≤ 25 °C P
amb
2
R
V
j
amb
stg
sd
R
thJA
60 V
215 mW
100 °C
- 40 to + 100 °C
- 40 to + 100 °C
260 °C
350 K/W
Rev. 1.6, 23-Aug-11
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1
Document Number: 81522
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0.01 0.1 1
0.1
1
10
100
1000
I - Reverse Light Current (µA)
ra
Ee- Irradiance (mW/cm²)
10
94 8414
VR= 5 V
= 950 nm
λ
0
20
40
60
80
948407
E = 0
f = 1 MHz
C
D
- Diode Capacitance (pF)
VR - Reverse Voltage (V)
0.1
100
110
BPW41N
Vishay Semiconductors
BASIC CHARACTERISTICS (T
= 25 °C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Breakdown voltage I
Reverse dark current V
Diode capacitance
Open circuit Voltage E
Temperature coefficient of V
o
Short circuit current E
Temperature coefficient of I
k
Reverse light current
Angle of half sensitivity
Wavelength of peak sensitivity λ
Range of spectral bandwidth λ
Noise equivalent power V
Rise time V
Fall time V
BASIC CHARACTERISTICS (T
1.4
amb
= 100 μA, E = 0 V
R
= 10 V, E = 0 I
R
V
= 0 V, f = 1 MHz, E = 0 C
R
V
= 3 V, f = 1 MHz, E = 0 C
R
= 1 mW/cm2, λ = 950 nm V
e
Ee = 1 mW/cm2, λ = 950 nm TK
= 1 mW/cm2, λ = 950 nm I
e
Ee = 1 mW/cm2, λ = 950 nm TK
E
= 1 mW/cm2, λ = 950 nm,
e
V
= 5 V
R
(BR)
ro
k
I
ra
D
D
o
Vo
Ik
60 V
43 45 μA
ϕ
p
0.5
= 10 V, λ = 950 nm NEP 4 x 10
R
= 10 V, RL = 1 kΩ, λ = 820 nm t
R
= 10 V, RL = 1 kΩ, λ = 820 nm t
R
r
f
= 25 °C, unless otherwise specified)
100
230nA
70 pF
25 40 pF
350 mV
- 2.6 mV/K
38 μA
0.1 %/K
± 65 deg
950 nm
870 to 1050 nm
-14
W/√ Hz
100 ns
100 ns
1 mW/cm
2
VR=5V
λ = 950 nm
100806040200
amb
Light Current
Reverse
ra rel
I - Relative
94 8409
1.2
1.0
0.8
0.6
T - Ambient Temperature (°C)
Fig. 1 - Relative Reverse Light Current vs. Ambient Temperature
2
2
2
2
2
100
= 950 nm
10
ra
I - Reverse Light Current (µA)
94 8415
λ
1
0.1 1 10
VR- Reverse Voltage (V)
0.5 mW/cm
0.2 mW/cm
0.1 mW/cm
0.05 mW/cm
0.02 mW/cm
Fig. 3 - Reverse Light Current vs. Reverse Voltage
Rev. 1.6, 23-Aug-11
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Fig. 2 - Reverse Light Current vs. Irradiance
For technical questions, contact: detectortechsupport@vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 4 - Diode Capacitance vs. Reverse Voltage
2
Document Number: 81522
0.4 0.2 0
S
rel
- Relative Radiant Sensitivity
94 8406
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
ϕ - Angular Displacement
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1.2
1.0
0.8
0.6
0.4
- Relative Spectral Sensitivity
0.2
rel
S (λ)
0
750
94 8408
850
950
λ - Wavelength (nm)
1050
1150
Fig. 5 - Relative Spectral Sensitivity vs. Wavelength Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement
PACKAGE DIMENSIONS in millimeters
± 0.2
5
Vishay Semiconductors
BPW41N
- 0.8
19.8
± 0.3
8.9
± 0.3
6.8
± 0.2
4
A
C
Sensitive area
(2.05)
Chip position
(2.8)
< 0.5
0.4
2.3
+ 0.1
- 0.05
Area not plane
± 0.2
< 0.65
0.45
2.5 nom.
+ 0.01
- 0.05
Rev. 1.6, 23-Aug-11
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Drawing-No.: 6.544-5108.01-4
Issue:1; 01.07.96
96 12195
For technical questions, contact: detectortechsupport@vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
technical drawings
according to DIN
specifications
3
Document Number: 81522
Legal Disclaimer Notice
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Vishay
Disclaimer
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
1
Document Number: 91000
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