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Silicon PIN Photodiode
94 8583
DESCRIPTION
BPW34 is a PIN photodiode with high speed and high
radiant sensitivity in miniature, flat, top view, clear plastic
package. It is sensitive to visible and near infrared radiation.
BPW34S is packed in tubes, specifications like BPW34.
BPW34, BPW34S
Vishay Semiconductors
FEATURES
• Package type: leaded
• Package form: top view
• Dimensions (L x W x H in mm): 5.4 x 4.3 x 3.2
• Radiant sensitive area (in mm
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 65°
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• High speed photo detector
2
): 7.5
PRODUCT SUMMARY
COMPONENT Ira (μA) ϕ (deg) λ
BPW34 50 ± 65 430 to 1100
BPW34S 50 ± 65 430 to 1100
Note
• Test condition see table “Basic Characteristics”
0.1
(nm)
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
BPW34 Bulk MOQ: 3000 pcs, 3000 pcs/bulk Top view
BPW34S Tube MOQ: 1800 pcs, 45 pcs/tube Top view
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
Power dissipation T
Junction temperature T
Operating temperature range T
Storage temperature range T
Soldering temperature t ≤ 3 s T
Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm
= 25 °C, unless otherwise specified)
amb
≤ 25 °C P
amb
2
R
V
j
amb
stg
sd
R
thJA
60 V
215 mW
100 °C
- 40 to + 100 °C
- 40 to + 100 °C
260 °C
350 K/W
Rev. 2.1, 23-Aug-11
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1
Document Number: 81521
Page 2
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20 40 60 80
1
10
100
1000
100
94 8403
VR = 10 V
T
amb
- Ambient Temperature (°C)
I
ro
- Reverse Dark Current (nA)
0.6
0.8
1.0
1.2
1.4
I
ra, rel
- Relative Reverse Light Current
T
amb
- Ambient Temperature (°C)
94 8416
VR = 5 V
λ = 950 nm
0
10080
60
4020
BPW34, BPW34S
Vishay Semiconductors
BASIC CHARACTERISTICS (T
= 25 °C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Breakdown voltage I
Reverse dark current V
Diode capacitance
Open circuit voltage E
Temperature coefficient of V
o
Short circuit current
Temperature coefficient of I
k
Reverse light current
Angle of half sensitivity
Wavelength of peak sensitivity λ
Range of spectral bandwidth λ
Noise equivalent power V
Rise time V
Fall time V
BASIC CHARACTERISTICS (T
= 100 μA, E = 0 V
R
= 10 V, E = 0 I
R
V
= 0 V, f = 1 MHz, E = 0 C
R
V
= 3 V, f = 1 MHz, E = 0 C
R
= 1 mW/cm2, λ = 950 nm V
e
Ee = 1 mW/cm2, λ = 950 nm TK
E
= 1 klx I
A
E
= 1 mW/cm2, λ = 950 nm I
e
Ee = 1 mW/cm2, λ = 950 nm TK
E
= 1 klx, VR = 5 V I
A
E
= 1 mW/cm2, λ = 950 nm,
e
V
= 5 V
R
(BR)
ro
k
k
ra
I
ra
D
D
o
Vo
Ik
60 V
40 50 μA
ϕ
p
0.1
= 10 V, λ = 950 nm NEP 4 x 10
R
= 10 V, RL = 1 kΩ, λ = 820 nm t
R
= 10 V, RL = 1 kΩ, λ = 820 nm t
R
= 25 °C, unless otherwise specified)
amb
r
f
230nA
70 pF
25 40 pF
350 mV
- 2.6 mV/K
70 μA
47 μA
0.1 %/K
75 μA
± 65 deg
900 nm
430 to 1100 nm
-14
100 ns
100 ns
W/√Hz
Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Rev. 2.1, 23-Aug-11
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: detectortechsupport@vishay.com
2
Document Number: 81521
Page 3
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0.01 0.1 1
0.1
1
10
100
1000
10
94 8417
VR = 5 V
λ = 950 nm
E
e
- Irradiance (mW/cm2)
I
ra
- Reverse Light Current (µA)
0.1
1
10
100
1000
94 8418
10
1
10
2
10
3
10
4
VR=5V
E
A
- Illuminance (lx)
I - Reverse Light Current (µA)
ra
0
20
40
60
80
948407
E = 0
f = 1 MHz
C
D
- Diode Capacitance (pF)
VR - Reverse Voltage (V)
0.1
100
110
0.4 0.2 0
S
rel
- Relative Radiant Sensitivity
94 8406
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
ϕ - Angular Displacement
BPW34, BPW34S
Vishay Semiconductors
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 4 - Reverse Light Current vs. Illuminance
100
1 mW/cm
10
0.2 mW/cm
0.05 mW/cm
- Reverse Light Current (µA)
ra
I
94 8419
Fig. 5 - Reverse Light Current vs. Reverse Voltage
λ = 950 nm
1
0.1 1 10
V
- Reverse Voltage (V)
R
0.5 mW/cm
0.1 mW/cm
2
2
2
2
2
100
Fig. 6 - Diode Capacitance vs. Reverse Voltage
y
1.0
0.8
0.6
0.4
- Relative Spectral Sensitivit
0.2
rel
S(λ)
0
350 550 750 950
94 8420
λ - Wavelength (nm)
1150
Fig. 7 - Relative Spectral Sensitivity vs. Wavelength
Fig. 8 - Relative Radiant Sensitivity vs. Angular Displacement
Rev. 2.1, 23-Aug-11
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions, contact: detectortechsupport@vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
Document Number: 81521
Page 4
www.vishay.com
96 12186
PACKAGE DIMENSIONS in millimeters
BPW34, BPW34S
Vishay Semiconductors
TUBE PACKAGING DIMENSIONS in millimeters
10.7
Quantity per tube: 45 pcs
Quantity per box: 1800 pcs
214.5
Stopper
Fig. 9 - Drawing Proportions not scaled
Rev. 2.1, 23-Aug-11
4
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
9.5
18800
Document Number: 81521
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Revision: 01-Jan-2019
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Document Number: 91000
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