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Silicon NPN Phototransistor
Description
BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window.
With a lead center to center spacing of 2.54mm and a
package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of
unlimited size.
Due to its waterclear epoxy the device is sensitive to
visible and near infrared radiation.
Features
D
Miniature T–¾ flat clear plastic package
D
Very wide viewing angle ϕ = ± 40
D
Suitable for 0.1” (2.54 mm) center to center spacing
D
Suitable for visible and near infrared radiation
D
Compatible with IR diode CQY36N
°
BPW16N
Vishay Semiconductors
94 8638
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Collector Emitter Voltage V
Emitter Collector Voltage V
Collector Current I
Peak Collector Current tp/T = 0.5, tp x 10 ms I
Total Power Dissipation T
Junction Temperature T
Storage Temperature Range T
Soldering Temperature t x 3 s T
Thermal Resistance Junction/Ambient R
x 55 °C P
amb
CEO
ECO
C
CM
tot
j
stg
sd
thJA
32 V
5 V
50 mA
100 mA
100 mW
100
–55...+100
260
450 K/W
°
C
°
C
°
C
Document Number 81515
Rev. 2, 20-May-99
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BPW16N
Vishay Semiconductors
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Collector Emitter Breakdown
Voltage
Collector Dark Current VCE = 20 V, E = 0 I
Collector Emitter Capacitance VCE = 5 V, f = 1 MHz, E = 0 C
Collector Light Current Ee = 1 mW/cm2,
Angle of Half Sensitivity ϕ ±40 deg
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Voltage
Turn–On Time VS = 5 V, IC = 5 mA,
Turn–Off Time VS = 5 V, IC = 5 mA,
Cut–Off Frequency VS = 5 V, IC = 5 mA,
IC = 1 mA V
l
= 950 nm, VCE = 5 V
Ee = 1 mW/cm2,
l
= 950 nm, IC = 0.01 mA
RL = 100
RL = 100
R
= 100
L
W
W
W
(BR)CE
O
CEO
CEO
I
ca
l
p
l
0.5
V
CEsat
t
on
t
off
f
c
32 V
1 200 nA
8 pF
0.07 0.14 mA
825 nm
620...960 nm
0.3 V
4.8
5.0
120 kHz
m
s
m
s
Typical Characteristics (T
125
100
75
50
25
tot
P – Total Power Dissipation ( mW )
0
020406080
T
94 8308
Figure 1. Total Power Dissipation vs.
– Ambient Temperature ( °C )
amb
Ambient Temperature
= 25_C unless otherwise specified)
amb
4
10
3
10
CEO
I – Collector Dark Current ( nA )
94 8235
2
10
1
10
0
10
20
40 60 80
T
– Ambient Temperature ( °C )
amb
R
thJA
100
Figure 2. Collector Dark Current vs. Ambient Temperature
VCE=20V
100
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2 (5) Rev. 2, 20-May-99
Document Number 81515
Page 3
BPW16N
Vishay Semiconductors
2.0
1.8
1.6
VCE=5V
E
=1mW/cm
e
l
=950nm
2
1.4
1.2
1.0
ca rel
0.8
I – Relative Collector Current
0.6
0
20 40 60 80
94 8239
T
– Ambient Temperature ( °C )
amb
Figure 3. Relative Collector Current vs.
Ambient Temperature
1
0.1
0.01
VCE=5V
l
=950nm
100
20
16
f=1MHz
12
8
4
CEO
C – Collector Emitter Capacitance ( pF )
0
0.1 1 10
94 8240
VCE – Collector Emitter Voltage ( V )
Figure 6. Collector Emitter Capacitance vs.
Collector Emitter Voltage
12
m
10
8
6
4
VCE=5V
R
=100
L
l
=950nm
100
W
t
off
ca
I – Collector Light Current ( mA )
0.001
0.01 0.1 1
94 8236
Ee – Irradiance ( mW/cm2 )
Figure 4. Collector Light Current vs. Irradiance
1
l
=950nm
0.1
Ee=1mW/cm
0.5mW/cm
0.2mW/cm
ca
I – Collector Light Current ( mA )
0.01
0.1 1 10
94 8237
VCE – Collector Emitter Voltage ( V )
Figure 5. Collector Light Current vs.
Collector Emitter Voltage
off
2
on
t / t – Turn on / Turn off Time ( s )
94 8238
0
04812
IC – Collector Current ( mA )
10
t
on
16
Figure 7. Turn On/Turn Off Time vs. Collector Current
1.0
2
2
2
0.8
0.6
0.4
rel
0.2
l
S ( ) – Relative Spectral Sensitivity
0
100
400 600 1000
l
– Wavelength ( nm )94 8241
800
Figure 8. Relative Spectral Sensitivity vs. Wavelength
Document Number 81515
Rev. 2, 20-May-99
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BPW16N
Vishay Semiconductors
0°
10°20
°
30°
1.0
0.9
0.8
rel
S – Relative Sensitivity
0.7
0.4 0.2 0 0.2 0.4
0.6
94 8312
Figure 9. Relative Radiant Sensitivity vs.
Angular Displacement
40°
50°
60°
70°
80°
0.6
96 12188
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4 (5) Rev. 2, 20-May-99
Document Number 81515
Page 5
BPW16N
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Document Number 81515
Rev. 2, 20-May-99
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
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