VISHAY BPV22NFL User Manual
Silicon PIN Photodiode
Description
BPV22NF(L) is a high speed and high sensitive PIN
photodiode in a plastic package with a spherical side
view lens.
The epoxy package itself is an IR filter, spectrally
matched to GaAs on GaAs and GaAlAs on GaAlAs IR
emitters (λ
Lens radius and chip position are perfectly matched
to the chip size, giving high sensitivity without compromising the viewing angle.
In comparison with flat packages the spherical lens
package achieves a sensitivity improvement of 80 %.
= 950 nm, s
p
(λ = 875 nm) > 90 %).
rel
BPV22NF(L)
Vishay Semiconductors
94 8633
Features
• Large radiant sensitive area (A = 7.5 mm2)
• Wide viewing angle ϕ = ± 60 °
• Improved sensitivity
• Fast response times
• Low junction capacitance
• Plastic package with universal IR filter
Applications
Infrared remote control and free air transmission systems in combination with IR emitter diodes (TSU.-,
TSI.-, or TSH.-Series). High sensitivity detector for
high data rate transmission systems.
The IR filter matches perfectly to the high speed infrared emitters in the 830 nm to 880 nm wavelength
range.
• Option "L": long lead package optional available
with suffix "L"; e.g.: BPV23FL
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Val ue Unit
Reverse Voltage V
Power Dissipation T
Junction Temperature T
Operating Temperature Range T
Storage Temperature Range T
Soldering Temperature t ≤ 5 s T
Thermal Resistance Junction/
Ambient
≤ 25 °C P
amb
R
V
j
amb
stg
sd
R
thJA
60 V
215 mW
100 °C
- 55 to + 100 °C
- 55 to + 100 °C
260 °C
350 K/W
Document Number 81509
Rev. 1.4, 08-Mar-05
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1
BPV22NF(L)
Vishay Semiconductors
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parame te r Test condition Symbol Min Ty p. Max Unit
Forward Voltage I
Breakdown Voltage I
Reverse Dark Current V
Diode capacitance V
Serial Resistance V
= 50 mA V
F
= 100 µA, E = 0 V
R
= 10 V, E = 0 I
R
= 0 V, f = 1 MHz, E = 0 C
R
= 12 V, f = 1 MHz R
R
F
(BR)
ro
D
S
60 V
Optical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parame te r Test condition Symbol Min Ty p. Max Unit
TK
TK
V
o
Vo
I
k
I
ra
Ira
p
0.5
*
D
r
f
c
c
55 85 µA
Open Circuit Voltage
Temp. Coefficient of V
o
Short Circuit Current
Reverse Light Current
Temp. Coefficient of I
ra
Absolute Spectral Sensitivity V
= 1 mW/cm2, λ = 950 nm
E
e
Ee = 1 mW/cm2, λ = 950 nm
= 1 mW/cm2, λ = 950 nm
E
e
= 1 mW/cm2, λ = 870 nm,
E
e
= 5 V
V
R
Ee = 1 mW/cm2, λ = 950 nm,
= 10 V
V
R
= 5 V, λ = 870 nm s(λ) 0.57 A/W
R
V
= 5 V, λ = 950 nm s(λ)0.6A/W
R
Angle of Half Sensitivity ϕ ± 60 deg
Wavelength of Peak Sensitivity λ
Range of Spectral Bandwidth λ
Quantum Efficiency λ = 950 nm η 90 %
Noise Equivalent Power V
Detectivity V
Rise Time V
Fall Time V
Cut-Off Frequency V
= 10 V, λ = 950 nm NEP
R
= 10 V, λ = 950 nm
R
= 10 V, RL = 1 kΩ, λ = 820 nm t
R
= 10 V, RL = 1 kΩ, λ = 820 nm t
R
= 12 V, RL = 1 kΩ, λ = 870 nm f
R
= 12 V, RL = 1 kΩ, λ = 950 nm f
V
R
11.3V
230nA
70 pF
400 Ω
370 mV
- 2.6 mV/K
80 µA
0.1 %/K
940 nm
790 to 1050 nm
4 x 10
6 x 10
-14
12
W/√ Hz
cm√Hz/W
100 ns
100 ns
4MHz
1MHz
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Document Number 81509
Rev. 1.4, 08-Mar-05
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
BPV22NF(L)
8
6
E=0
f=1MHz
4
2
D
C - Diode Capacitance ( pF )
0
0.1 1 10
94 8430
VR- Reverse Voltage ( V )
100
Figure 1. Reverse Dark Current vs. Ambient Temperature
1.4
1.2
1.0
VR=5V
λ = 950 nm
100
2
2
2
2
2
2
100
µ
λ = 950 nm
10
ra
I - Reverse Light Current ( A )
1
0.1 1 10
94 8412
V
1 mW/cm
0.5 mW/cm
0.2 mW/cm
0.1 mW/cm
0.05 mW/cm
0.02 mW/cm
- Reverse Voltage ( V )
R
Figure 4. Reverse Light Current vs. Reverse Voltage
80
E=0
f=1MHz
60
40
0.8
ra rel
I - Relative Reverse Light Current
0.6
100806040200
T
94 8409
- Ambient Temperature ( ° C)
amb
Figure 2. Relative Reverse Light Current vs. Ambient Temperature
1000
µ
100
10
VR=5V
1
ra
I - Reverse Light Current ( A )
0.1
0.01 0.1 1
94 8411
Ee- Irradiance ( mW/cm2)
λ = 950 nm
10
Figure 3. Reverse Light Current vs. Irradiance
20
D
C - Diode Capacitance ( pF )
0
0.1 1 10
94 8407
VR- Reverse V oltage ( V )
100
Figure 5. Diode Capacitance vs. Reverse Voltage
1.2
1.0
0.8
0.6
0.4
0.2
rel
0.0
S(λ ) - Relative Spectral Sensitivity
750 850 950 1050 1150
94 8426
λ - Wavelength ( nm )
Figure 6. Relative Spectral Sensitivity vs. Wavelength
Document Number 81509
Rev. 1.4, 08-Mar-05
www.vishay.com
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