VISHAY BPV 11 TEL Datasheet

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12785

Silicon NPN Phototransistor

DESCRIPTION

BPV11 is a silicon NPN phototransistor with high radiant
sensitivity in clear, T-1¾ plastic package with base terminal.
It is sensitive to visible and near infrared radiation.

BPV11

Vishay Semiconductors

FEATURES

• Package type: leaded

• Package form: T-1¾

• Dimensions (in mm): Ø 5

• High photo sensitivity

• High radiant sensitivity

• Suitable for visible and near infrared radiation

• Fast response times

• Angle of half sensitivity:  = ± 15°

• Base terminal connected

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

APPLICATIONS

• Detector for industrial electronic circuitry, measurement
and control

PRODUCT SUMMARY

COMPONENT Ica (mA)  (deg) 

BPV11 10 ± 15 450 to 1080

Note

• Test condition see table “Basic Characteristics”

0.1

(nm)

ORDERING INFORMATION

ORDERING CODE PACKAGING REMARKS PACKAGE FORM

BPV11 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾

Note

• MOQ: minimum order quantity

ABSOLUTE MAXIMUM RATINGS (T

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Collector base voltage V

Collector emitter voltage V

Emitter base voltage V

Collector current I

Collector peak current t

Power dissipation T

Junction temperature T

Operating temperature range T

Storage temperature range T

Soldering temperature t  5 s, 2 mm from body T

Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm

= 25 °C, unless otherwise specified)

amb

/T = 0.5, tp  10 ms I

p

 47 °C P

amb

2

R

CBO

CEO

EBO

C

CM

V

amb

stg

sd

thJA

80 V

70 V

5V

50 mA

100 mA

150 mW

j

100 °C

- 40 to + 100 °C

- 40 to + 100 °C

260 °C

350 K/W

Rev. 1.8, 03-May-13

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1

Document Number: 81504

www.vishay.com

94 8249

20

I

CEO

- Collector Dark Current (nA)

100

40 60 80

T

amb

- Ambient Temperature (°C)

10

10

1

10

2

10

3

10

4

VCE = 10 V

0

0.6

0.8

1.0

1.2

1.4

2.0

20 40 60 80

100

1.6

1.8

λ

94 8239

T

amb

- Ambient Temperature (°C)

I

ca rel

- Relative Collector Current

VCE = 5 V
E

e

= 1 mW/cm

2

= 950 nm

200

160

120

80

- Power Dissipation (mW)

40

V

P

BPV11

Vishay Semiconductors

R

thJA

0

100806040200

T

- Ambient Temperature (°C)

94 8300

amb

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature

BASIC CHARACTERISTICS (T

= 25 °C, unless otherwise specified)

amb

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

Collector emitter breakdown voltage I

Collector emitter dark current V

DC current gain V

Collector emitter capacitance V

Collector base capacitance V

Collector light current E

CE

CE

BE

= 1 mW/cm2,  = 950 nm, VCE = 5 V I

e

= 1 mA V

C

= 10 V, E = 0 I

CE

= 5 V, IC = 5 mA, E = 0 h

= 0 V, f = 1 MHz, E = 0 C

= 0 V, f = 1 MHz, E = 0 C

(BR)CEO

CEO

FE

CEO

CBO

ca

70 V

150nA

450

15 pF

19 pF

310 mA

Angle of half sensitivity  ± 15 deg

Wavelength of peak sensitivity 

Range of spectral bandwidth 

Collector emitter saturation voltage E

Turn-on time V

Turn-off time V

Cut-off frequency V

BASIC CHARACTERISTICS (T

= 1 mW/cm2,  = 950 nm, IC = 1 mA V

e

= 5 V, IC = 5 mA, RL = 100  t

S

= 5 V, IC = 5 mA, RL = 100  t

S

= 5 V, IC = 5 mA, RL = 100  f

S

= 25 °C, unless otherwise specified)

amb

p

0.1

CEsat

on

off

c

850 nm

450 to 1080 nm

130 300 mV

6μs

5μs

110 kHz

Fig. 2 - Collector Dark Current vs. Ambient Temperature Fig. 3 - Relative Collector Current vs. Ambient Temperature

Rev. 1.8, 03-May-13

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

2

Document Number: 81504

For technical questions, contact: [e-mail]

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000