VISHAY BPV 11 TEL Datasheet

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12785

Silicon NPN Phototransistor

DESCRIPTION

BPV11 is a silicon NPN phototransistor with high radiant
sensitivity in clear, T-1¾ plastic package with base terminal.
It is sensitive to visible and near infrared radiation.

BPV11

Vishay Semiconductors

FEATURES

• Package type: leaded

• Package form: T-1¾

• Dimensions (in mm): Ø 5

• High photo sensitivity

• High radiant sensitivity

• Suitable for visible and near infrared radiation

• Fast response times

• Angle of half sensitivity:  = ± 15°

• Base terminal connected

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

APPLICATIONS

• Detector for industrial electronic circuitry, measurement
and control

PRODUCT SUMMARY

COMPONENT Ica (mA)  (deg) 

BPV11 10 ± 15 450 to 1080

Note

• Test condition see table “Basic Characteristics”

0.1

(nm)

ORDERING INFORMATION

ORDERING CODE PACKAGING REMARKS PACKAGE FORM

BPV11 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾

Note

• MOQ: minimum order quantity

ABSOLUTE MAXIMUM RATINGS (T

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Collector base voltage V

Collector emitter voltage V

Emitter base voltage V

Collector current I

Collector peak current t

Power dissipation T

Junction temperature T

Operating temperature range T

Storage temperature range T

Soldering temperature t  5 s, 2 mm from body T

Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm

= 25 °C, unless otherwise specified)

amb

/T = 0.5, tp  10 ms I

p

 47 °C P

amb

2

R

CBO

CEO

EBO

C

CM

V

amb

stg

sd

thJA

80 V

70 V

5V

50 mA

100 mA

150 mW

j

100 °C

- 40 to + 100 °C

- 40 to + 100 °C

260 °C

350 K/W

Rev. 1.8, 03-May-13

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1

Document Number: 81504

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94 8249

20

I

CEO

- Collector Dark Current (nA)

100

40 60 80

T

amb

- Ambient Temperature (°C)

10

10

1

10

2

10

3

10

4

VCE = 10 V

0

0.6

0.8

1.0

1.2

1.4

2.0

20 40 60 80

100

1.6

1.8

λ

94 8239

T

amb

- Ambient Temperature (°C)

I

ca rel

- Relative Collector Current

VCE = 5 V
E

e

= 1 mW/cm

2

= 950 nm

200

160

120

80

- Power Dissipation (mW)

40

V

P

BPV11

Vishay Semiconductors

R

thJA

0

100806040200

T

- Ambient Temperature (°C)

94 8300

amb

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature

BASIC CHARACTERISTICS (T

= 25 °C, unless otherwise specified)

amb

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

Collector emitter breakdown voltage I

Collector emitter dark current V

DC current gain V

Collector emitter capacitance V

Collector base capacitance V

Collector light current E

CE

CE

BE

= 1 mW/cm2,  = 950 nm, VCE = 5 V I

e

= 1 mA V

C

= 10 V, E = 0 I

CE

= 5 V, IC = 5 mA, E = 0 h

= 0 V, f = 1 MHz, E = 0 C

= 0 V, f = 1 MHz, E = 0 C

(BR)CEO

CEO

FE

CEO

CBO

ca

70 V

150nA

450

15 pF

19 pF

310 mA

Angle of half sensitivity  ± 15 deg

Wavelength of peak sensitivity 

Range of spectral bandwidth 

Collector emitter saturation voltage E

Turn-on time V

Turn-off time V

Cut-off frequency V

BASIC CHARACTERISTICS (T

= 1 mW/cm2,  = 950 nm, IC = 1 mA V

e

= 5 V, IC = 5 mA, RL = 100  t

S

= 5 V, IC = 5 mA, RL = 100  t

S

= 5 V, IC = 5 mA, RL = 100  f

S

= 25 °C, unless otherwise specified)

amb

p

0.1

CEsat

on

off

c

850 nm

450 to 1080 nm

130 300 mV

6μs

5μs

110 kHz

Fig. 2 - Collector Dark Current vs. Ambient Temperature Fig. 3 - Relative Collector Current vs. Ambient Temperature

Rev. 1.8, 03-May-13

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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Document Number: 81504

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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0.1 1 10

0.1

1

10

100

I

ca

- Collector Light Current (mA)

VCE - Collector Emitter Voltage (V)

100

94 8272

Ee = 1 mW/cm

2

λ = 950 nm

0.5 mW/cm

2

0.2 mW/cm

2

0.1 mW/cm

2

0.05 mW/cm

2

0.02 mW/cm

2

0.01 0.1 1 10

0

200

400

600

800

B - Amplification

IC - Collector Current (mA)

100

94 8250

VCE = 5 V

0.1 1 10

0

4

8

12

16

20

C

CBO

- Collector Base Capacitance (pF)

VCB - Collector Base Voltage (V)

100

94 8246

f = 1 MHz

100

10

1

0.1

- Collector Light Current (mA)

ca

I

0.01

0.01 0.1 1

94 8244

Ee - Irradiance (mW/cm²)

BPV11

Vishay Semiconductors

VCE = 5 V

λ = 950 nm

10

Fig. 4 - Collector Light Current vs. Irradiance

Fig. 5 - Collector Light Current vs. Collector Emitter Voltage

Fig. 7 - Collector Base Capacitance vs. Collector Base Voltage

20

16

12

8

4

f = 1 MHz

- Collector Ermitter Capacitance (pF)

0

CEO

C

0.1 1 10

94 8247

VCE - Collector Ermitter Voltage (V)

100

Fig. 8 - Collector Emitter Capacitance vs. Collector Emitter Voltage

12

10

8

VCE = 5 V

R

= 100 Ω

L

λ = 950 nm

Rev. 1.8, 03-May-13

Fig. 6 - Amplification vs. Collector Current

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

6

4

- Turn-on/Turn-off Time (µs)

off

2

/t

on

t

0

3

94 8253

Fig. 9 - Turn-on/Turn-off Time vs. Collector Current

IC - Collector Current (mA)

For technical questions, contact: [e-mail]

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

t

on

t

off

1612840

Document Number: 81504

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Chip position

0.8

+ 0.2

- 0.1

Issue:1; 01.07.96

± 0.15

Drawing-No.: 6.544-5188.01-4

specifications

according to DIN

technical drawings

0.5

Area not plane

± 0.15

± 0.3

± 0.5

5.75

± 0.15

0.5

E

B

5

± 0.3

+ 0.15

0.8

C

1.5

± 0.25

- 0.1

+ 0.2

0.8

- 0.1

+ 0.2

- 0.1

+ 0.2

1.27 nom.

2.54 nom.

12.3

(4.55)

7.6

35

< 0.7

8.6

R 2.

45 (sphere)

96 12200

1.0

BPV11

Vishay Semiconductors

0°

10° 20°

30°

0.8

0.6

1.0

0.9

0.4

- Relative Spectral Sensitivity

0.2

rel

S (λ)

0

400 600 1000

94 8348

λ - Wavelength (nm)

800

0.8

- Relative Sensitivity

rel

S

0.7

0.6

94 8248

0.20.4

0

Fig. 10 - Relative Spectral Sensitivity vs. Wavelength Fig. 11 - Relative Radiant Sensitivity vs. Angular Displacement

PACKAGE DIMENSIONS in millimeters

40°

50°

60°

70°

ϕ - Angular Displacement

80°

Rev. 1.8, 03-May-13

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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Document Number: 81504

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Revision: 08-Feb-17

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Document Number: 91000