VISHAY BPV10NF User Manual

High Speed Silicon PIN Photodiode

Description

BPV10NF is a high sensitive and wide bandwidth PIN
photodiode in a standard T-1¾ plastic package. The
black epoxy is an universal IR filter, spectrally
matched to GaAs (λ = 950 nm) and GaAlAs
(λ = 870 nm) IR emitters.

BPV10NF is optimized for serial infrared links accord­ing to the IrDA standard.

Features

• Extra fast response times

• High modulation bandwidth (>100 MHz)

• High radiant sensitivity

• Radiant sensitive area A = 0.78 mm

2

• Low junction capacitance

• Standard T-1¾ (∅ 5 mm) package with universal

IR filter

• Angle of half sensitivity ϕ = ± 20°

• Lead-free component

• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

Applications

Infrared high speed remote control and free air trans­mission systems with high modulation frequencies or
high data transmission rate requirements , especially
for direct point to point links.

BPV10NF is ideal for the design of transmission sys­tems according to IrDA requirements and for carrier
frequency based systems (e.g. ASK / FSK- coded,
450 kHz or 1.3 MHz). Recommended emitter diodes
are TSHF 5...-series or TSSF 4500.

BPV10NF

Vishay Semiconductors

16140

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Symbol Val ue Unit

Reverse Voltage V

Power Dissipation T

Junction Temperature T

Operating Temperature Range T

Storage Temperature Range T
Soldering Temperature 2 mm from body, t ≤ 5 s T

Thermal Resistance Junction/
Ambient

≤ 25 °C P

amb

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Symbol Min Ty p. Max Unit

Forward Voltage I

Breakdown Voltage I

Reverse Dark Current V

Diode capacitance V

Document Number 81503

Rev. 1.4, 08-Mar-05

= 50 mA V

F

= 100 µA, E = 0 V

R

= 20 V, E = 0 I

R

= 0 V, f = 1 MHz, E = 0 C

R

F

(BR)

ro

D

R

V

j

amb

stg

sd

R

thJA

60 V

60 V

215 mW

100 °C

- 55 to + 100 °C

- 55 to + 100 °C

260 °C

350 K/W

11.3V

15nA

11 pF

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BPV10NF

Vishay Semiconductors

Optical Characteristics

T

= 25 °C, unless otherwise specified

amb

Parame te r Test condition Symbol Min Ty p. Max Unit

TK

V

o

I

k

I

ra

I

ra

Ira

30 60 µA

Open Circuit Voltage

Short Circuit Current

Reverse Light Current

Temp. Coefficient of I

ra

Absolute Spectral Sensitivity V

= 1 mW/cm2, λ = 870 nm

E

e

= 1 mW/cm2, λ = 870 nm

E

e

= 1 mW/cm2, λ = 870 nm,

E

e

= 5 V

V

R

= 1 mW/cm2, λ = 950 nm,

E

e

V

= 5 V

R

Ee = 1 mW/cm2, λ = 870 nm,

= 5 V

V

R

= 5 V, λ = 870 nm s(λ) 0.55 A/W

R

Angle of Half Sensitivity ϕ ± 20 deg
Wavelength of Peak Sensitivity λ

Range of Spectral Bandwidth λ

p

0.5

Quantum Efficiency λ = 950 nm η 70 %

Noise Equivalent Power V

Detectivity V

Rise Time V

= 20 V, λ = 950 nm NEP

R

= 20 V, λ = 950 nm

R

= 50 V, RL = 50 Ω, λ = 820

R

*

D

t

r

nm

Fall Time V

= 50 V, RL = 50 Ω, λ = 820

R

t

f

nm

450 mV

50 µA

55 µA

-0.1 %/K

940 nm

790 to 1050 nm

3 x 10

3 x 10

-14

12

W/√ Hz

cm√Hz/W

2.5 ns

2.5 ns

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

1000

100

10

ro

I – Reverse Dark Current ( nA )

1

20 40 60 80

T

94 8436

– Ambient Temperature(°C )

amb

V

=20V

R

100

Figure 1. Reverse Dark Current vs. Ambient Temperature

1.4

1.2

1.0

VR=5V

=1mW/cm

E

e

λ

T

amb

2

=870nm

– Ambient Temperature (°C )

ra rel

I – Relative Reverse Light Current

94 8621

0.8

0.6
020406080

Figure 2. Relative Reverse Light Current vs. Ambient Temperature

100

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2

Document Number 81503

Rev. 1.4, 08-Mar-05