High Speed Silicon PIN Photodiode
Description
BPV10NF is a high sensitive and wide bandwidth PIN
photodiode in a standard T-1¾ plastic package. The
black epoxy is an universal IR filter, spectrally
matched to GaAs (λ = 950 nm) and GaAlAs
(λ = 870 nm) IR emitters.
BPV10NF is optimized for serial infrared links according to the IrDA standard.
Features
• Extra fast response times
• High modulation bandwidth (>100 MHz)
• High radiant sensitivity
• Radiant sensitive area A = 0.78 mm
2
• Low junction capacitance
• Standard T-1¾ (∅ 5 mm) package with universal
IR filter
• Angle of half sensitivity ϕ = ± 20°
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Infrared high speed remote control and free air transmission systems with high modulation frequencies or
high data transmission rate requirements , especially
for direct point to point links.
BPV10NF is ideal for the design of transmission systems according to IrDA requirements and for carrier
frequency based systems (e.g. ASK / FSK- coded,
450 kHz or 1.3 MHz). Recommended emitter diodes
are TSHF 5...-series or TSSF 4500.
BPV10NF
Vishay Semiconductors
16140
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Val ue Unit
Reverse Voltage V
Power Dissipation T
Junction Temperature T
Operating Temperature Range T
Storage Temperature Range T
Soldering Temperature 2 mm from body, t ≤ 5 s T
Thermal Resistance Junction/
Ambient
≤ 25 °C P
amb
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Min Ty p. Max Unit
Forward Voltage I
Breakdown Voltage I
Reverse Dark Current V
Diode capacitance V
Document Number 81503
Rev. 1.4, 08-Mar-05
= 50 mA V
F
= 100 µA, E = 0 V
R
= 20 V, E = 0 I
R
= 0 V, f = 1 MHz, E = 0 C
R
F
(BR)
ro
D
R
V
j
amb
stg
sd
R
thJA
60 V
60 V
215 mW
100 °C
- 55 to + 100 °C
- 55 to + 100 °C
260 °C
350 K/W
11.3V
15nA
11 pF
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BPV10NF
Vishay Semiconductors
Optical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parame te r Test condition Symbol Min Ty p. Max Unit
TK
V
o
I
k
I
ra
I
ra
Ira
30 60 µA
Open Circuit Voltage
Short Circuit Current
Reverse Light Current
Temp. Coefficient of I
ra
Absolute Spectral Sensitivity V
= 1 mW/cm2, λ = 870 nm
E
e
= 1 mW/cm2, λ = 870 nm
E
e
= 1 mW/cm2, λ = 870 nm,
E
e
= 5 V
V
R
= 1 mW/cm2, λ = 950 nm,
E
e
V
= 5 V
R
Ee = 1 mW/cm2, λ = 870 nm,
= 5 V
V
R
= 5 V, λ = 870 nm s(λ) 0.55 A/W
R
Angle of Half Sensitivity ϕ ± 20 deg
Wavelength of Peak Sensitivity λ
Range of Spectral Bandwidth λ
p
0.5
Quantum Efficiency λ = 950 nm η 70 %
Noise Equivalent Power V
Detectivity V
Rise Time V
= 20 V, λ = 950 nm NEP
R
= 20 V, λ = 950 nm
R
= 50 V, RL = 50 Ω, λ = 820
R
*
D
t
r
nm
Fall Time V
= 50 V, RL = 50 Ω, λ = 820
R
t
f
nm
450 mV
50 µA
55 µA
-0.1 %/K
940 nm
790 to 1050 nm
3 x 10
3 x 10
-14
12
W/√ Hz
cm√Hz/W
2.5 ns
2.5 ns
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1000
100
10
ro
I – Reverse Dark Current ( nA )
1
20 40 60 80
T
94 8436
– Ambient Temperature(°C )
amb
V
=20V
R
100
Figure 1. Reverse Dark Current vs. Ambient Temperature
1.4
1.2
1.0
VR=5V
=1mW/cm
E
e
λ
T
amb
2
=870nm
– Ambient Temperature (°C )
ra rel
I – Relative Reverse Light Current
94 8621
0.8
0.6
020406080
Figure 2. Relative Reverse Light Current vs. Ambient Temperature
100
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Document Number 81503
Rev. 1.4, 08-Mar-05
BPV10NF
Vishay Semiconductors
1000
A)
µ
100
10
VR=5V
λ
1
ra
I – Reverse Light Current (
0.1
0.01 0.1 1
94 8622
Ee– Irradiance ( mW/
=870nm
cm
Figure 3. Reverse Light Current vs. Irradiance
100
10
ra
I – Reverse Light Current (µA)
1
0.1 1 10
94 8623
2
1 mW/cm
0.5 mW/cm
0.2 mW/cm
0.1 mW/cm
0.05 mW/cm
0.02 mW/cm
V
R
2
2
2
2
2
– Reverse Voltage ( V )
λ
2
)
=870nm
10
100
1.2
1.0
0.8
0.6
0.4
0.2
rel
0.0
S(λ ) - Relative Spectral Sensitivity
750 850 950 1050 1150
94 8426
λ - Wavelength ( nm )
Figure 6. Relative Spectral Sensitivity vs. Wavelength
7
100 W
1.8 mA
94 8562
Figure 4. Reverse Light Current vs. Reverse Voltage
12
10
8
6
4
D
C – Diode Capacitance ( pF )
2
0
0.1 1 10
94 8439
VR– Reverse Voltage ( V )
E=0
f=1MHz
Figure 5. Diode Capacitance vs. Reverse Voltage
Document Number 81503
Rev. 1.4, 08-Mar-05
Figure 7. Relative Radiant Sensitivity vs. Angular Displacement
100
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BPV10NF
Vishay Semiconductors
Package Dimensions in mm
96 12198
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Document Number 81503
Rev. 1.4, 08-Mar-05
BPV10NF
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 81503
Rev. 1.4, 08-Mar-05
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Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
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