BFS17/BFS17R/BFS17W
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For broadband amplifiers up to 1 GHz.
Features
D
High power gain
D
SMD-package
Vishay Semiconductors
1
94 9280
23
BFS17 Marking: E1
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
13 581
BFS17R Marking: E4
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
1
9510527
23
1
13 652
2
3
BFS17W Marking: WE1
Plastic case (SOT 323)
1 = Collector, 2 = Base, 3 = Emitter
13 570
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current I
Total power dissipation T
Junction temperature T
Storage temperature range T
≤ 60 °C P
amb
CBO
CEO
EBO
C
tot
j
stg
13 581
25 V
15 V
2.5 V
25 mA
200 mW
150
–55 to +150
°
C
°
C
Document Number 85038
Rev. 4, 20-Jan-99
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BFS17/BFS17R/BFS17W
qy
Vishay Semiconductors
Maximum Thermal Resistance
T
= 25_C, unless otherwise specified
amb
Parameter T est Conditions Symbol Value Unit
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm
plated with 35mm Cu
Electrical DC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Collector cut-off current VCE = 25 V, VBE = 0 I
Collector-base cut-off current VCB = 10 V, IE = 0 I
Emitter-base cut-off current VEB = 2.5 V, IC = 0 I
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V
Collector-emitter saturation voltage IC = 10 mA, IB = 1 mA V
DC forward current transfer ratio VCE = 1 V, IC = 2 mA h
VCE = 1 V, IC = 25 mA h
3
R
thJA
CES
CBO
EBO
(BR)CEO
CEsat
FE
FE
450 K/W
15 V
20 100 150
20
100mA
100 nA
10
m
0.75 V
A
Electrical AC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Transition frequency VCE = 5 V, IC = 2 mA, f = 300 MHz f
VCE = 5 V, IC = 14 mA, f = 300 MHz f
VCE = 5 V, IC = 25 mA, f = 300 MHz f
Collector-base capacitance VCB = 5 V, f = 1 MHz C
Collector-emitter capacitance VCE = 5 V, f = 1 MHz C
Emitter-base capacitance VEB = 0.5 V, f = 1 MHz C
Noise figure VCE = 5 V, IC = 2 mA, ZS = 50 W,
f = 800 MHz
Power gain VCE = 5 V, IC = 14 mA, ZS = 50 W,
f = 200 MHz
VCE = 5 V, IC = 14 mA, ZS = 50 W,
f = 800 MHz
Linear output voltage – two
tone intermodulation test
Third order intercept point VCE = 5 V, IC = 14 mA, f = 800 MHz IP
VCE = 5 V, IC = 14 mA, dIM = 60 dB,
f
= 806 MHz, f2 = 810 MHz,
1
ZS = ZL = 50
W
V1 = V
T
T
T
cb
ce
eb
1.5 GHz
2.4 GHz
2.1 GHz
0.45 pF
0.2 pF
0.8 pF
F 3.5 dB
G
pe
G
pe
2
3
23 dB
11 dB
100 mV
23 dBm
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Document Number 85038
Rev. 4, 20-Jan-99
Common Emitter S–Parameters
BFS17/BFS17R/BFS17W
Vishay Semiconductors
Z0 = 50 W,T
VCE/V IC/mA f/MHz
5 5 1000 0.35 –173.1 2.16 68.6 0.10 63.2 0.61 –20.1
= 25_C, unless otherwise specified
amb
S11 S21 S12 S22
LIN
MAG
100 0.89 –30.1 5.92 155.7 0.03 73.7 0.95 –9.2
300 0.67 –77.7 4.35 121.5 0.06 53.5 0.80 –18.5
500 0.52 –110.1 3.12 100.8 0.08 47.4 0.71 –20.3
800 0.42 –141.1 2.13 82.4 0.09 48.7 0.67 –21.6
2 1000 0.40 –155.6 1.77 73.5 0.10 51.3 0.67 –23.9
1200 0.40 –167.6 1.51 66.1 0.11 54.3 0.67 –27.1
1500 0.41 176.3 1.27 56.0 0.13 59.6 0.66 –32.4
1800 0.43 162.8 1.09 48.6 0.15 65.5 0.66 –37.3
2000 0.44 153.6 0.98 45.8 0.18 71.6 0.68 –41.0
100 0.75 –49.0 11.55 142.9 0.02 66.8 0.88 –14.3
300 0.48 –106.9 6.36 106.6 0.05 55.0 0.67 –18.9
500 0.39 –137.3 4.09 90.5 0.06 56.9 0.61 –17.4
800 0.36 –162.5 2.65 76.0 0.08 61.2 0.60 –17.6
1200 0.37 178.1 1.84 62.2 0.11 65.2 0.61 –23.4
1500 0.40 165.0 1.51 53.2 0.14 68.1 0.61 –28.9
1800 0.42 153.7 1.28 46.4 0.16 71.8 0.61 –33.7
2000 0.43 146.0 1.16 44.2 0.19 76.1 0.64 –37.5
100 0.58 –70.1 16.31 130.8 0.02 62.7 0.79 –17.5
300 0.39 –129.4 7.28 98.3 0.04 61.2 0.59 –16.5
500 0.36 –154.4 4.52 85.2 0.05 64.9 0.56 –14.2
800 0.36 –174.1 2.88 72.6 0.08 67.6 0.57 –14.8
10 1000 0.36 176.8 2.33 65.9 0.10 68.7 0.58 –17.5
1200 0.38 169.3 1.97 59.8 0.11 70.2 0.59 –21.3
1500 0.41 159.0 1.61 51.7 0.14 72.7 0.59 –26.7
1800 0.44 148.4 1.36 45.4 0.17 75.6 0.60 –31.8
2000 0.46 140.9 1.23 43.0 0.20 79.6 0.62 –35.7
ANG
deg deg deg deg
LIN
MAG
ANG
LIN
MAG
ANG
LIN
MAG
ANG
Document Number 85038
Rev. 4, 20-Jan-99
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3 (9)
BFS17/BFS17R/BFS17W
5
Vishay Semiconductors
S1 1 S21 S12 S22
VCE/V IC/mA f/MHz
100 0.49 –84.8 18.25 124.3 0.01 62.8 0.73 –18.0
300 0.37 –140.9 7.49 94.8 0.03 65.1 0.57 –14.7
500 0.36 –162.3 4.59 82.8 0.05 68.3 0.55 –12.7
800 0.37 –179.6 2.91 71.0 0.08 70.4 0.56 –13.5
15 1000 0.38 173.1 2.34 64.5 0.09 71.4 0.58 –16.5
1200 0.40 166.1 1.98 58.8 0.11 72.8 0.58 –20.4
1500 0.44 155.8 1.61 50.7 0.14 75.2 0.59 –26.2
1800 0.46 145.8 1.36 44.6 0.17 78.2 0.60 –31.4
2000 0.48 137.7 1.23 42.4 0.20 81.9 0.62 –35.2
100 0.44 –96.6 19.07 120.0 0.01 62.0 0.70 –17.6
300 0.36 –148.7 7.46 92.6 0.03 67.9 0.57 –13.3
500 0.38 –167.0 4.55 81.4 0.05 70.5 0.55 –11.6
800 0.39 177.5 2.87 69.9 0.07 72.3 0.57 –13.2
20 1000 0.40 169.8 2.31 63.5 0.09 73.3 0.58 –16.3
1200 0.42 163.8 1.95 57.9 0.11 74.9 0.59 –20.3
1500 0.46 153.8 1.58 50.1 0.13 77.5 0.59 –26.2
1800 0.49 143.7 1.34 43.9 0.17 80.4 0.60 –31.4
2000 0.49 136.1 1.21 41.9 0.20 83.7 0.62 –35.4
LIN
MAG
ANG
deg deg deg deg
LIN
MAG
ANG
LIN
MAG
ANG
LIN
MAG
ANG
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Document Number 85038
Rev. 4, 20-Jan-99
BFS17/BFS17R/BFS17W
Vishay Semiconductors
Typical Characteristics (T
300
250
200
150
100
50
tot
P – Total Power Dissipation ( mW )
0
0 20 40 60 80 100 120 140 160
T
– Ambient Temperature ( °C )96 12159
amb
Figure 1. Total Power Dissipation vs.
Ambient Temperature
3000
2500
2000
= 25_C unless otherwise specified)
amb
1.0
0.8
0.6
0.4
0.2
cb
C – Collector Base Capacitance ( pF )
0
0 4 8 12 16 20
VCB – Collector Base Voltage ( V )13604
Figure 3. Collector Base Capacitance vs.
Collector Base Voltage
f=1MHz
1500
1000
500
T
f – Transition Frequency ( MHz )
0
0 5 10 15 20 25 30
IC – Collector Current ( mA )13603
VCE=5V
f=300MHz
Figure 2. Transition Frequency vs. Collector Current
Document Number 85038
Rev. 4, 20-Jan-99
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5 (9)
BFS17/BFS17R/BFS17W
ÁÁ
Vishay Semiconductors
VCE = 5 V, IC = 10 mA , Z0 = 50
S
11
j
S
21
j0.5
j0.2
0
–j0.2
13 546
0.2
–j0.5
2.0 GHz
1.0
0.5
0.3
1
–j
Figure 4. Input reflection coefficient
0.1
j2
2
5
–j2
–j5
W
j5
S
12
90°
0.5
0.1
–90°
2.0 GHz
1.5
1.0
60°
0.08 0.16
30°
0°
–30°
120°
150°
1
180°
–150°
–120° –60°
13 547
Figure 6. Reverse transmission coefficient
S
22
90°
120°
0.1
150°
0.3
0.5
180°
–150°
13548
2.0 GHz
–120° –60°
–90°
8 16
Figure 5. Forward transmission coefficient
60°
30°
–30°
j
j0.5
j0.2
0°
0
–j0.2
13 549
–j0.5
0.2
0.5
1
2.0 GHz
–j
j2
j5
2
5
0.5
–j2
1
0.1
–j5
Figure 7. Output reflection coefficient
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Document Number 85038
Rev. 4, 20-Jan-99
Dimensions of BFS17 in mm
BFS17/BFS17R/BFS17W
Vishay Semiconductors
95 11346
Dimensions of BFS17R in mm
95 11347
Document Number 85038
Rev. 4, 20-Jan-99
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7 (9)
BFS17/BFS17R/BFS17W
Vishay Semiconductors
Dimensions of BFS17W in mm
96 12236
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Document Number 85038
Rev. 4, 20-Jan-99
BFS17/BFS17R/BFS17W
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Document Number 85038
Rev. 4, 20-Jan-99
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
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