Silicon NPN Planar RF Transistor
Features
• High power gain
• Low noise figure
• High transition frequency
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
RF amplifier up to GHz range specially for wide
band antenna amplifier.
Mechanical Data
Case: TO-50 Plastic case
Weight: approx. 111 mg
Pinning: 1 = Collector, 2 = Emitter, 3 = Base
e3
BFR90A
Vishay Semiconductors
3
B
3
2
Electrostatic sensitive device.
Observe precautions for handling.
2
E
1
1
C
19039
Parts Table
Par t Ordering code Marking Remarks Package
BFR90A BFR90AGELB-GS08 BFR90A Packed in Bulk TO-50(3)
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Val ue Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current I
Total power dissipation T
Junction temperature T
Storage temperature range T
≤ 60 °C P
amb
CBO
CEO
EBO
C
tot
j
stg
20 V
15 V
2V
30 mA
300 mW
150 °C
- 65 to + 150 °C
Maximum Thermal Resistance
Parameter Test condition Symbol Val ue Unit
Junction ambient
1)
on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35 μm Cu
1)
R
thJA
300 K/W
Document Number 85029
Rev. 1.4, 29-Apr-05
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1
BFR90A
Vishay Semiconductors
Electrical DC Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Min Ty p. Max Unit
Collector-emitter cut-off current V
Collector-base cut-off current V
Emitter-base cut-off current V
Collector-emitter breakdown
voltage
DC forward current transfer ratio V
Electrical AC Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Min Ty p. Max Unit
Transition frequency V
Collector-base capacitance V
Collector-emitter capacitance V
Emitter-base capacitance V
Noise figure V
Power gain V
Linear output voltage - two tone
intermodulation test
Third order intercept point V
= 20 V, VBE = 0 I
CE
= 15 V, IE = 0 I
CB
= 2 V, IC = 0 I
EB
I
= 1 mA, IB = 0 V
C
= 10 V, IC = 14 mA h
CE
= 10 V, IC = 14 mA,
CE
f = 500 MHz
= 10 V, f = 1 MHz C
CB
= 10 V, f = 1 MHz C
CE
= 0.5 V, f = 1 MHz C
EB
= 10 V, IC = 2 mA,
CE
f = 800 MHz, Z
= 10 V, IC = 14 mA,
CE
= Z
Z
L
Lopt
V
= 10 V, IC = 14 mA,
CE
= 60 dB, f1 = 806 MHz,
d
IM
= 810 MHz, ZS = ZL = 50 Ω
f
2
= 10 V, IC = 14 mA,
CE
f = 800 MHz
= 50 Ω
S
, f = 800 MHz
CES
CBO
EBO
(BR)CEO
FE
f
T
cb
ce
eb
15 V
50 100 150
6GHz
0.3 pF
0.25 pF
0.9 pF
100 μA
100 nA
10 μA
F1.8dB
G
pe
V
= V
1
2
IP
3
16 dB
120 mV
24 dBm
Common Emitter S-Parameters
VCE/V IC/mA f/MHz S11 S21 S12 S22
LIN
MAG
5 2 100 0.90 -17.7 6.25 165.4 0.02 81.1 0.98 -6.8
300 0.80 -50.4 5.51 140.9 0.05 65.5 0.91 -18.2
500 0.67 -78.1 4.66 121.6 0.07 56.7 0.84 -25.8
800 0.52 -111.2 3.56 99.9 0.08 51.2 0.77 -33.8
1000 0.45 -128.8 2.99 89.0 0.09 51.0 0.75 -38.4
1200 0.40 -144.1 2.58 80.3 0.10 52.1 0.74 -42.7
1500 0.34 -164.2 2.11 69.3 0.11 54.6 0.74 49.4
1800 0.30 176.6 1.80 59.3 0.12 57.8 0.75 -56.3
2000 0.28 165.9 1.64 54.2 0.13 59.4 0.76 -61.0
5 5 100 0.77 -27.0 13.24 156.9 0.02 76.2 0.95 -10.9
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ANG LIN
MAG
ANG LIN
MAG
ANG LIN
MAG
deg deg deg deg
Document Number 85029
Rev. 1.4, 29-Apr-05
ANG
BFR90A
Vishay Semiconductors
VCE/V IC/mA f/MHz S11 S21 S12 S22
LIN
MAG
300 0.56 -69.4 9.72 125.0 0.04 63.9 0.79 -23.5
500 0.41 -97.4 7.01 106.7 0.05 61.8 0.70 -28.5
800 0.30 -126.9 4.76 89.9 0.07 63.5 0.65 34.1
1000 0.26 -142.7 3.89 81.8 0.08 64.6 0.64 -38.3
1200 0.24 -155.8 3.29 75.1 0.10 65.7 0.63 -42.5
1500 0.21 -174.3 2.67 66.5 0.12 66.2 0.64 -49.3
1800 0.19 167.7 2.27 58.1 0.14 66.0 0.66 -56.2
2000 0.18 158.7 2.06 53.8 0.16 65.5 0.67 -60.6
5 10 100 0.61 -33.8 20.89 147.5 0.02 74.8 0.89 -15.0
300 0.36 -85.3 12.25 113.4 0.03 67.7 0.68 -24.6
500 0.26 -111.7 8.10 98.2 0.05 69.4 0.61 -27.5
800 0.20 -139.9 5.28 84.9 0.07 71.4 0.58 -32.8
1000 0.18 -154.3 4.28 78.0 0.08 71.8 0.58 -37.0
1200 0.17 -166.5 3.61 72.3 0.10 71.6 0.58 -41.5
1500 0.16 177.7 2.91 64.7 0.12 70.3 0.59 -48.7
1800 0.14 160.4 2.48 57.1 0.15 68.7 0.61 -55.7
2000 0.14 153.6 2.26 53.1 0.17 67.5 0.62 -60.4
5 14 100 0.51 -44.8 24.51 142.5 0.01 74.5 0.86 -16.7
300 0.28 -93.9 13.01 108.9 0.03 71.0 0.65 -24.1
500 0.20 -120.2 8.36 95.3 0.05 72.9 0.59 -26.2
800 0.17 -147.3 5.40 83.0 0.07 74.0 0.57 -31.8
1000 0.15 -160.1 4.36 76.6 0.08 74.0 0.57 -36.2
1200 0.15 -172.1 3.69 71.3 0.10 73.4 0.57 -40.7
1500 0.14 172.8 2.98 63.9 0.13 71.7 0.58 -48.0
1800 0.13 155.7 2.52 56.5 0.15 69.8 0.60 -55.1
2000 0.13 147.1 2.29 52.8 0.17 68.3 0.61 -59.8
5 20 100 0.41 -53.2 27.71 137.2 0.01 74.0 0.82 -18.0
300 0.22 -105.4 13.38 104.9 0.03 74.1 0.62 -22.9
500 0.17 -131.2 8.45 92.6 0.04 75.6 0.58 -24.8
800 0.15 -156.4 5.41 81.3 0.07 76.1 0.56 -30.7
1000 0.14 170.4 4.36 75.2 0.09 75.4 0.56 -35.3
1200 0.14 177.4 3.68 69.8 0.10 74.5 0.57 -40.0
1500 0.14 164.4 2.96 62.5 0.13 72.5 0.58 -47.3
1800 0.14 147.5 2.51 55.4 0.15 70.4 0.59 -54.5
2000 0.13 141.0 2.28 51.5 0.17 68.8 0.60 -59.3
5 30 100 0.30 -67.7 29.72 131.4 0.01 74.3 0.78 -18.4
300 0.19 -125.3 13.17 101.2 0.03 76.3 0.61 -20.7
500 0.16 -149.8 8.19 90.0 0.04 78.0 0.58 -22.8
800 0.16 -171.3 5.23 79.2 0.07 77.8 0.57 -29.0
1000 0.16 177.6 4.21 73.3 0.08 77.1 0.57 -33.9
1200 0.16 167.5 3.54 68.2 0.10 76.0 0.58 -38.6
1500 0.16 156.2 2.85 60.9 0.13 73.9 0.59 -46.1
1800 0.16 139.1 2.41 53.8 0.15 71.7 0.61 -53.5
2000 0.16 133.3 2.19 49.9 0.17 70.0 0.62 -58.3
10 2 100 0.92 -16.7 6.23 166.0 0.01 80.6 0.98 -5.7
ANG LIN
MAG
deg deg deg deg
ANG LIN
MAG
ANG LIN
MAG
ANG
Document Number 85029
Rev. 1.4, 29-Apr-05
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BFR90A
Vishay Semiconductors
VCE/V IC/mA f/MHz S11 S21 S12 S22
LIN
MAG
300 0.87 -47.6 5.55 142.1 0.03 67.1 0.93 -15.5
500 0.69 -74.0 4.75 123.3 0.05 58.8 0.87 -22.2
800 0.53 -106.0 3.67 101.9 0.06 54.1 0.82 -29.5
1000 0.45 -122.8 3.10 90.9 0.07 54.4 0.80 -33.9
1200 0.39 -138.0 2.67 82.3 0.08 56.0 0.79 -38.0
1500 0.33 -158.2 2.19 71.2 0.09 59.8 0.80 -44.3
1800 0.29 -177.6 1.87 61.2 0.10 63.6 0.81 -50.8
2000 0.27 172.2 1.70 56.1 0.11 65.5 0.83 -55.3
10 5 100 0.80 -24.7 13.17 158.0 0.01 77.5 0.96 -8.8
300 0.58 -63.9 9.89 126.8 0.03 65.7 0.83 19.3
500 0.43 -89.9 7.21 108.5 0.04 63.5 0.76 -23.7
800 0.30 -117.6 4.94 91.6 0.06 65.9 0.72 -29.2
1000 0.26 -132.1 4.04 83.4 0.07 67.5 0.71 -33.2
1200 0.22 -145.9 3.42 76.8 0.08 69.1 0.71 -37.2
1500 0.19 -163.0 2.77 68.0 0.10 70.2 0.72 -43.6
1800 0.17 177.9 2.36 59.8 0.12 70.7 0.79 -50.3
2000 0.15 168.8 2.15 55.6 0.13 70.4 0.75 -54.7
10 10 100 0.65 -34.2 20.73 149.1 0.01 74.8 0.92 -11.8
300 0.39 -77.0 12.60 115.1 0.03 68.7 0.75 -19.8
500 0.27 -99.8 8.38 99.9 0.04 70.7 0.69 -22.6
800 0.19 -124.7 5.50 86.3 0.06 73.2 0.67 27.8
1000 0.17 -138.1 4.45 79.4 0.07 74.3 0.67 -31.9
1200 0.15 -151.4 3.76 74.0 0.08 74.2 0.67 -36.2
1500 0.13 -167.7 3.04 66.4 0.11 74.1 0.68 -42.7
1800 0.18 174.5 2.58 58.8 0.13 73.1 0.70 -49.5
2000 0.11 165.6 2.35 54.8 0.14 72.3 0.72 -53.9
10 14 100 0.56 -39.9 24.49 144.2 0.01 74.3 0.89 -13.1
300 0.31 -83.1 13.40 110.5 0.03 71.4 0.72 -19.3
500 0.21 -104.9 8.66 96.8 0.04 74.1 0.67 -21.6
800 0.16 -129.3 5.62 84.4 0.06 76.0 0.66 -26.9
1000 0.14 -142.2 4.55 78.0 0.07 76.3 0.66 -31.0
1200 0.13 -155.9 3.83 72.7 0.08 76.1 0.66 -35.5
1500 0.12 -170.8 3.10 65.4 0.10 75.3 0.68 -42.2
1800 0.11 169.7 2.63 58.1 0.13 74.0 0.70 -49.1
2000 0.11 162.3 2.39 54.3 0.14 73.0 0.71 -53.5
ANG LIN
MAG
deg deg deg deg
ANG LIN
MAG
ANG LIN
MAG
ANG
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Document Number 85029
Rev. 1.4, 29-Apr-05
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
BFR90A
400
350
300
250
200
150
100
50
tot
P - Total Power Dissipation ( mW )
0
0 20 40 60 80 100 120 140 160
T
12845
- Ambient Temperature ( °C)
amb
Figure 1. Total Power Dissipation vs. Ambient Temperature
6000
5000
4000
3000
2000
3.5
3.0
2.5
2.0
1.5
1.0
F - Noise Figure ( dB )
0.5
0
0 5 10 15 20 25 30
12891
IC- Collector Current ( mA )
Figure 4. Noise Figure vs. Collector Current
VCE=10V
f = 800 MHz
=50
Z
S
1000
T
f - Transition Frequency ( MHz )
0
0 5 10 15 20 25 30
12889
IC- Collector Current ( mA )
VCE= 10V
f = 500 MHz
Figure 2. Transition Frequency vs. Collector Current
1.0
0.8
0.6
0.4
0.2
cb
C - Collector Base Capacitance ( pF )
0
0 4 8 12 16 20
12890
VCB- Collector Base Voltage ( V )
f=1MHz
Figure 3. Collector Base Capacitance vs. Collector Base Voltage
Document Number 85029
Rev. 1.4, 29-Apr-05
www.vishay.com
5
BFR90A
Vishay Semiconductors
VCE = 10 V, IC = 10 mA, Z0 = 50 Ω
S
S
11
21
j
j0.5
j0.2
0
-j0.2
13 510
0.2 0.5 1 2 5
-j0.5
2.0 GHz
1.0
0.3
-j
0.1
Figure 5. Input Reflection Coefficient
0.3
2.0 GHz
90°
0.8
8 16
120°
0.1
150°
180°
-150°
60°
-j2
S
12
0.3
2.0 GHz
-90°
90°
0.8
60°
8 16
-60°
30°
0°
-30°
j2
j5
∞
-j5
180°
13 512
120°
0.1
150°
-150°
-120°
Figure 7. Reverse Transmission Coefficient
S
22
j
30°
-30 °
j0.5
j0.2
0.2 0.5 1 2 5
0°
0
-j0.2
2.0 GHz
1.0
0.5
j2
j5
∞
0.1
-j5
13 512
Figure 6. Forward Transmission Coefficient
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-120°
-90 °
-60 °
13 513
-j0.5
-j
Figure 8. Output Reflection Coefficient
-j2
Document Number 85029
Rev. 1.4, 29-Apr-05
Package Dimensions in mm
BFR90A
Vishay Semiconductors
96 12244
Document Number 85029
Rev. 1.4, 29-Apr-05
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7
BFR90A
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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8
Document Number 85029
Rev. 1.4, 29-Apr-05
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
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