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SOT-143
SOT-343
12
43
2
1
3
4
13579
Electrostatic sensitive device.
Observe precautions for handling.
VISHAY
Silicon NPN Planar RF Transistor
Features
• High power gain
• Low noise figure
• High transition frequency
Applications
RF amplifier up to GHz range.
Mechanical Data
Typ: BFP93A
Case: SOT-143 Plastic case
Weight: approx. 8.0 mg
Marking: FE
Pinning:
1 = Collector, 2 = Emitter
3 = Base, 4 = Emitter
Typ: BFP93AW
BFP93A / BFP93AW
Vishay Semiconductors
Case: SOT-343 Plastic case
Weight: approx. 6.0 mg
Marking: WFE
Pinning:
1 = Collector, 2 = Emitter,
3 = Base, 4 = Emitter
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Value Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current I
Total power dissipation T
Junction temperature T
Storage temperature range T
Maximum Thermal Resistance
Junction ambient
1)
on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 µm Cu
Parameter Test condition Symbol Value Unit
≤ 60 °C P
amb
1)
R
CBO
CEO
EBO
C
tot
j
stg
thJA
20 V
12 V
2V
50 mA
200 mW
150 °C
-65 to +150 °C
450 K/W
Document Number 85020
Rev. 1.4, 03-Sep-04
www.vishay.com
1
BFP93A / BFP93AW
Vishay Semiconductors
Electrical DC Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Min Ty p. Max Unit
Collector-emitter cut-off current V
Collector-base cut-off current V
Emitter-base cut-off current V
Collector-emitter breakdown
voltage
Collector-emitter saturation
voltage
DC forward current transfer ratio V
Electrical AC Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Min Ty p. Max Unit
Transition frequency V
Collector-base capacitance V
Collector-emitter capacitance V
Emitter-base capacitance V
Noise figure V
Power ga in V
Linear output voltage - two tone
intermodulation test
Third order intercept point V
= 20 V, VBE = 0 I
CE
= 15 V, IE = 0 I
CB
= 2 V, IC = 0 I
EB
= 1 mA, IB = 0 V
I
C
I
= 50 mA, IB = 5 mA V
C
= 5 V, IC = 30 mA h
CE
= 5 V, IC = 30 mA,
CE
f = 500 MHz
= 10 V, f = 1 MHz C
CB
= 10 V, f = 1 MHz C
CE
= 0.5 V, f = 1 MHz C
EB
= 8 V, ZS = 50 Ω,
CE
f = 800 MHz, I
V
= 8 V, ZS = 50 Ω,
CE
f = 800 MHz, I
= 8 V, ZS = 50 Ω, ZL = Z
CE
I
= 25 mA, f = 800 MHz
C
V
= 8 V, ZS = 50 Ω, ZL = Z
CE
I
= 25 mA, f = 2 GHz
C
V
= 8 V, IC = 25 mA,
CE
= 60 dB, f1 = 806 MHz,
d
IM
f
= 810 MHz, ZS = ZL = 50 Ω
2
= 8 V, IC = 25 mA,
CE
= 5 mA
C
= 25 mA
C
f = 800 MHz
Lopt
Lopt
VISHAY
CES
CBO
EBO
(BR)CEO
CEsat
FE
f
T
cb
ce
eb
12 V
0.1 0.4 V
40 90 150
6GHz
0.45 pF
0.2 pF
1.25 pF
F1.6dB
F2.1dB
,
G
pe
,
G
pe
= V
V
1
2
IP
3
17 dB
10 dB
260 mV
31 dBm
100 µA
100 nA
10 µA
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2
Document Number 85020
Rev. 1.4, 03-Sep-04
VISHAY
BFP93A / BFP93AW
Vishay Semiconductors
Common Emitter S-Parameters
Z0 = 50 Ω, T
VCE/V IC/mA f/MHz S11 S21 S12 S22
3 10 100 0.642 -64.0 22.49 143.1 0.026 61.3 0.797 -31.5
3 30 100 0.486 -114.2 34.23 127.8 0.017 56.0 0.600 -48.7
5 10 100 0.658 -59.4 22.80 144.7 0.024 62.3 0.816 -28.2
5 30 100 0.483 -104.7 35.46 129.2 0.016 57.3 0.625 -43.0
= 25 °C, unless otherwise specified
amb
LIN
MAG
300 0.566 -130.1 12.29 109.6 0.045 43.5 0.433 -52.7
500 0.555 -156.2 8.00 95.5 0.053 42.7 0.293 -54.6
800 0.560 -176.6 5.25 82.4 0.066 45.5 0.221 -52.7
1000 0.567 173.8 4.30 75.8 0.075 46.6 0.204 -52.6
1200 0.580 166.3 3.64 69.3 0.085 47.0 0.192 -54.2
1500 0.601 156.6 2.97 60.2 0.099 46.6 0.181 -60.0
1800 0.620 148.0 2.52 52.1 0.112 45.6 0.171 -68.0
2000 0.642 143.3 2.30 46.6 0.122 44.6 0.170 -74.4
2200 0.662 137.5 2.13 41.5 0.132 43.5 0.169 -79.8
2500 0.691 130.2 1.90 33.4 0.143 37.9 0.168 -92.4
2800 0.715 123.1 1.70 25.9 0.152 37.7 0.176 -104.2
3000 0.733 119.4 1.59 21.6 0.160 36.4 0.180 -112.7
300 0.552 -162.2 14.56 99.7 0.029 55.0 0.248 -67.8
500 0.563 -177.2 9.10 89.1 0.040 59.7 0.149 -66.7
800 0.572 169.7 5.84 78.5 0.058 62.0 0.105 -59.3
1000 0.578 162.6 4.75 72.6 0.071 61.4 0.098 -57.0
1200 0.590 157.0 4.01 67.0 0.084 60.0 0.093 -58.5
1500 0.609 149.7 3.25 58.4 0.101 57.5 0.090 -67.5
1800 0.631 142.5 2.76 51.0 0.117 54.4 0.086 -80.2
2000 0.649 138.7 2.50 45.9 0.129 52.1 0.089 -90.0
2200 0.673 133.3 2.31 41.0 0.140 50.0 0.091 -97.4
2500 0.698 126.9 2.06 33.3 0.151 43.7 0.099 -116.4
2800 0.718 120.6 1.84 26.5 0.162 42.2 0.112 -129.8
3000 0.736 116.6 1.72 21.9 0.169 40.3 0.124 -138.5
300 0.557 -125.3 12.81 111.0 0.042 44.4 0.468 -46.6
500 0.538 -152.8 8.42 96.6 0.050 43.3 0.331 -46.8
800 0.543 -174.4 5.51 83.3 0.062 45.8 0.263 -44.0
1000 0.546 175.6 4.50 76.6 0.071 47.4 0.248 -43.8
1200 0.561 167.7 3.82 70.2 0.080 47.6 0.237 -45.1
1500 0.578 157.8 3.12 61.1 0.093 47.4 0.225 -50.0
1800 0.601 149.0 2.65 53.2 0.105 46.7 0.215 -56.5
2000 0.623 143.9 2.41 47.7 0.115 46.0 0.213 -61.8
2200 0.640 138.2 2.23 42.6 0.124 45.0 0.211 -66.5
2500 0.673 131.0 1.99 34.7 0.136 39.4 0.206 -77.4
2800 0.696 123.9 1.79 27.0 0.144 39.3 0.208 -87.9
3000 0.709 119.6 1.68 22.7 0.151 38.0 0.208 -95.7
ANG LIN
MAG
deg deg deg deg
ANG LIN
MAG
ANG LIN
MAG
ANG
Document Number 85020
Rev. 1.4, 03-Sep-04
www.vishay.com
3
BFP93A / BFP93AW
Vishay Semiconductors
VCE/V IC/mA f/MHz S11 S21 S12 S22
LIN
MAG
300 0.519 -157.7 15.38 100.3 0.028 55.0 0.276 -54.3
500 0.525 -174.0 9.63 89.2 0.039 59.2 0.184 -47.0
800 0.531 172.2 6.21 78.4 0.057 61.3 0.153 -36.7
1000 0.527 165.0 5.05 72.5 0.069 60.9 0.151 -34.6
1200 0.534 159.5 4.28 66.5 0.081 59.4 0.149 -35.2
1500 0.547 151.1 3.50 57.7 0.099 56.3 0.145 -40.7
1800 0.561 143.1 2.98 49.8 0.115 52.8 0.138 -48.2
2000 0.570 138.1 2.72 44.2 0.127 50.3 0.138 -55.2
2200 0.587 131.9 2.53 38.9 0.139 47.9 0.139 -60.9
2500 0.601 123.8 2.27 30.1 0.154 40.8 0.129 -75.2
2800 0.619 114.4 2.07 22.3 0.165 38.4 0.136 -87.8
3000 0.628 108.4 1.95 17.2 0.174 35.4 0.140 -98.5
8 5 100 0.807 -37.8 14.08 154.2 0.026 69.9 0.906 -17.3
300 0.646 -94.1 9.77 121.8 0.054 45.8 0.656 -33.8
500 0.573 -126.8 6.93 104.3 0.065 37.9 0.510 -37.1
800 0.549 -155.7 4.70 88.5 0.073 34.7 0.423 -38.2
1000 0.544 -168.8 3.89 80.8 0.078 34.4 0.399 -39.0
1200 0.555 -179.3 3.32 73.5 0.083 34.8 0.382 -40.7
1500 0.572 168.6 2.73 63.6 0.090 35.3 0.367 -44.7
1800 0.591 157.8 2.34 55.0 0.098 36.3 0.356 -50.2
2000 0.613 151.4 2.14 49.1 0.104 36.3 0.352 -54.5
2200 0.631 144.3 1.98 43.5 0.110 36.3 0.349 -58.4
2500 0.649 135.2 1.77 35.2 0.119 35.8 0.347 -65.3
2800 0.677 126.9 1.60 27.3 0.126 35.7 0.351 -74.6
3000 0.695 122.6 1.50 22.8 0.132 34.9 0.345 -80.8
8 10 100 0.687 -54.7 22.73 146.0 0.023 63.5 0.827 -25.9
300 0.551 -119.4 13.13 112.3 0.041 45.2 0.494 -42.9
500 0.520 -148.4 8.68 97.3 0.048 43.8 0.360 -42.5
800 0.519 -171.6 5.70 84.0 0.061 46.1 0.294 -39.8
1000 0.523 178.3 4.66 77.3 0.069 47.2 0.279 -39.7
1200 0.534 170.0 3.95 70.8 0.078 47.5 0.268 -40.9
1500 0.551 159.6 3.22 61.7 0.091 47.3 0.255 -45.3
1800 0.575 151.4 2.74 53.8 0.103 46.2 0.244 -51.4
2000 0.598 146.1 2.50 48.3 0.112 45.6 0.241 -56.3
2200 0.617 140.0 2.31 43.1 0.120 44.6 0.238 -60.4
2500 0.641 132.3 2.06 35.2 0.133 39.4 0.231 -69.9
2800 0.672 125.4 1.84 27.8 0.139 39.1 0.231 -79.7
3000 0.687 121.6 1.73 23.4 0.146 37.9 0.226 -87.0
8 15 100 0.606 -68.3 28.45 140.3 0.020 60.8 0.764 -31.7
ANG LIN
MAG
deg deg deg deg
ANG LIN
MAG
ANG LIN
MAG
VISHAY
ANG
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4
Document Number 85020
Rev. 1.4, 03-Sep-04
VISHAY
BFP93A / BFP93AW
Vishay Semiconductors
VCE/V IC/mA f/MHz S11 S21 S12 S22
LIN
MAG
300 0.520 -133.8 14.66 107.5 0.035 47.7 0.408 -47.2
500 0.506 -158.7 9.43 94.2 0.043 49.1 0.289 -44.5
800 0.510 -178.4 6.13 82.1 0.057 52.6 0.236 -39.7
1000 0.515 172.5 5.00 75.8 0.067 53.5 0.227 -39.2
1200 0.530 165.1 4.22 69.8 0.077 53.4 0.219 -40.0
1500 0.550 156.5 3.43 61.0 0.092 52.2 0.209 -44.9
1800 0.573 148.2 2.91 53.5 0.106 50.0 0.199 -51.5
2000 0.586 143.5 2.65 48.1 0.115 48.9 0.196 -56.8
2200 0.614 137.7 2.44 43.2 0.125 47.7 0.194 -61.1
2500 0.644 131.1 2.19 35.4 0.138 41.1 0.185 -72.6
2800 0.667 124.1 1.95 28.2 0.144 41.0 0.186 -82.7
3000 0.680 120.2 1.84 24.2 0.152 39.5 0.184 -90.8
8 20 100 0.558 -79.5 32.26 136.2 0.018 58.5 0.714 -35.7
300 0.509 -143.1 15.46 104.7 0.031 50.3 0.356 -49.4
500 0.502 -165.3 9.81 92.4 0.040 53.3 0.249 -45.3
800 0.511 177.7 6.33 81.0 0.056 56.7 0.205 -39.0
1000 0.517 169.2 5.16 75.1 0.067 57.0 0.199 -38.1
1200 0.527 162.4 4.36 69.1 0.077 56.6 0.193 -39.2
1500 0.546 154.4 3.54 60.7 0.092 55.0 0.184 -44.5
1800 0.568 146.5 2.99 53.1 0.107 52.3 0.175 -51.6
2000 0.591 142.2 2.73 48.1 0.117 50.9 0.173 -57.2
2200 0.610 136.8 2.51 43.0 0.127 49.2 0.170 -61.9
2500 0.639 130.4 2.24 35.5 0.140 42.4 0.163 -74.8
2800 0.665 123.2 2.01 28.5 0.147 42.1 0.164 -85.2
3000 0.684 119.9 1.89 24.5 0.154 40.5 0.162 -94.3
8 25 100 0.525 -88.2 34.79 133.1 0.017 58.0 0.676 -38.5
300 0.505 -148.9 15.91 102.8 0.029 52.5 0.322 -50.8
500 0.503 -168.8 10.01 91.2 0.039 56.3 0.224 -45.2
800 0.511 175.1 6.43 80.2 0.055 59.3 0.187 -37.0
1000 0.518 167.2 5.24 74.3 0.066 59.5 0.183 -36.9
1200 0.528 161.0 4.42 68.6 0.078 58.4 0.178 -38.2
1500 0.548 153.2 3.59 60.3 0.093 56.3 0.170 -43.7
1800 0.571 145.9 3.03 52.9 0.108 53.6 0.161 -51.2
2000 0.585 141.5 2.76 47.8 0.118 51.8 0.159 -57.3
2200 0.613 136.0 2.55 43.1 0.128 50.0 0.157 -62.1
2500 0.642 129.6 2.27 35.3 0.141 43.4 0.150 -75.7
2800 0.669 122.7 2.04 28.5 0.148 42.7 0.151 -86.7
3000 0.683 119.4 1.91 24.2 0.156 40.9 0.151 -96.2
8 30 100 0.507 -95.1 36.47 130.8 0.016 57.9 0.644 -46.6
ANG LIN
MAG
deg deg deg deg
ANG LIN
MAG
ANG LIN
MAG
ANG
Document Number 85020
Rev. 1.4, 03-Sep-04
www.vishay.com
5
BFP93A / BFP93AW
Vishay Semiconductors
VCE/V IC/mA f/MHz S11 S21 S12 S22
LIN
MAG
300 0.506 -153.1 16.13 101.4 0.027 54.4 0.299 -51.2
500 0.506 -171.5 10.10 90.4 0.036 58.7 0.208 -44.5
800 0.515 173.2 6.48 79.6 0.055 61.1 0.176 -36.7
1000 0.523 166.1 5.28 74.0 0.066 60.9 0.173 -35.7
1200 0.531 159.9 4.45 68.2 0.077 60.0 0.169 -37.0
1500 0.551 152.4 3.60 59.9 0.093 57.4 0.162 -42.7
1800 0.574 145.2 3.05 52.7 0.108 54.4 0.154 -50.8
2000 0.585 141.0 2.76 47.4 0.119 52.6 0.152 -56.9
2200 0.613 135.7 2.57 42.8 0.128 50.8 0.150 -62.0
2500 0.644 129.2 2.28 35.1 0.141 43.9 0.143 -76.2
2800 0.669 122.8 2.04 28.5 0.149 43.2 0.145 -87.6
3000 0.685 119.2 1.91 24.2 0.156 41.4 0.144 -97.7
ANG LIN
MAG
ANG LIN
MAG
ANG LIN
MAG
deg deg deg deg
VISHAY
ANG
Typical Characteristics (T
300
250
200
150
100
50
tot
P -Total Power Dissipation ( mW )
0
0 2 0 40 60 8 0 100 120 140 160
96 12159
T
- Ambient Temperature ( °C)
amb
= 25 °C unless otherwise specified)
amb
Figure 1. Total Power Dissipation vs. Ambient Temperature
7000
6000
5000
4000
3000
2000
1000
T
f – Transition Frequency ( MHz )
0
0 1020304050
12880
IC– Collector Current ( mA )
VCE=5V
f = 500 MHz
1.0
0.8
0.6
0.4
0.2
cb
0.0
C – Collector Base Capacitance ( pF )
0 4 8 12 16 20
12881
VCB– Collector Base Voltage(V)
f=1MHz
Figure 3. Collector Base Capacitance vs. Collector Base Voltage
4
3
2
1
F – Noise Figure ( dB )
0
0 5 10 15 20 25
12882
IC– Collector Current ( mA )
VCE=8V
f = 800 MHz
Z
=50
S
Figure 2. Transition Frequency vs. Collector Current
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6
Figure 4. Noise Figure vs. Collector Current
Document Number 85020
Rev. 1.4, 03-Sep-04
VISHAY
VCE = 8 V, IC = 30 mA, Z0 = 50 Ω
S
11
BFP93A / BFP93AW
Vishay Semiconductors
S
21
3.0 GHz
90 °
0.3
1.0
3.0 GHz
–90 °
j
1.0
–j
60 °
12 24
0.3
0.1
–j2
30 °
0°
–30 °
j2
j5
ı
∞
–j5
j
12990
j0.5
3.0 GHz
j0.2
2.0
1.0
0
0.2 0.5 1 2 5
–j0.2
0.3
–j0.5
0.1
–j
–j2
j2
j5
∞
ı
–j5
12992
Figure 5. Input Reflection Coefficient
S
12
120 °
150 °
180 °
–150 °
–120 ° –60°
12991
90 °
0.1
–90 °
1.0
60 °
3.0 GHz
2.0
0.08 0.16
30 °
0°
–30 °
S
22
12993
0.1
120 °
150 °
180 °
–150 °
–120 ° –60 °
Figure 7. Forward Transmission Coefficient
j0.5
j0.2
0
0.2 0.5 1 2 5
–j0.2
–j0.5
Figure 6. Reverse Transmission Coefficient
Document Number 85020
Rev. 1.4, 03-Sep-04
Figure 8. Output Reflection Coefficient
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7
BFP93A / BFP93AW
Vishay Semiconductors
Package Dimensions in mm
VISHAY
0.50(0.020)
0.35 (0.014)
3.0 (0.117)
2.8 (0.109)
1.4 (0.055)
1.2 (0.047)
Mounting Pad Layout
1.8 (0.070)
1.6 (0.062)
0.65 (0.025)
2.0 (0.078)
1.8 (0.070)
Package Dimensions in mm
0.9 (0.035)
0.75 (0.029)
1.17 (0.046)
0.15 (0.006)
0.08 (0.003)
1.1 (0.043)
0.9 (0.035)
2.6 (0.101)
2.4 (0.094)
0...0.1 (0...0.004)
ISO Method E
96 12240
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8
96 12237
Document Number 85020
Rev. 1.4, 03-Sep-04
VISHAY
BFP93A / BFP93AW
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85020
Rev. 1.4, 03-Sep-04
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