Vishay BFP81 Schematic [ru]

Silicon NPN Planar RF Transistor

Electrostatic sensitive device.
Observe precautions for handling.

Applications

RF amplifier up to 2 GHz, especially for mobile tele­phone.

Features

D

Small feedback capacitance

D

Low noise figure

D

High transition frequency

21

BFP81

Vishay Semiconductors

94 9279

13 579–2

43

BFP81 Marking: FA
Plastic case (SOT 143)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter

Absolute Maximum Ratings

T

= 25_C, unless otherwise specified

amb

Parameter Test Conditions Symbol Value Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current I
Total power dissipation T
Junction temperature T
Storage temperature range T

≤ 60 °C P

amb

CBO
CEO
EBO

C
tot

j

stg

25 V
16 V

2 V

30 mA
200 mW
150

–65 to +150

Maximum Thermal Resistance

T

= 25_C, unless otherwise specified

amb

Parameter T est Conditions Symbol Value Unit

Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm

plated with 35mm Cu

3

R

thJA

450 K/W

°

C

°

C

Document Number 85018
Rev. 3, 20-Jan-99

www.vishay.com

1 (10)

BFP81

qy

Vishay Semiconductors

Electrical DC Characteristics

T

= 25_C, unless otherwise specified

amb

Parameter Test Conditions Symbol Min Typ Max Unit
Collector cut-off current VCE = 25 V, VBE = 0 I
Collector-base cut-off current VCB = 20 V, IE = 0 I
Emitter-base cut-off current VEB = 2 V, IC = 0 I
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V
Collector-emitter saturation voltage IC = 30 mA, IB = 3 mA V
DC forward current transfer ratio VCE = 10 V, IC = 5 mA h

VCE = 10 V, IC = 15 mA h

Electrical AC Characteristics

T

= 25_C, unless otherwise specified

amb

Parameter Test Conditions Symbol Min Typ Max Unit

Transition frequency VCE = 10 V, IC = 5 mA, f = 500 MHz f

VCE = 10 V, IC = 15 mA, f = 500 MHz f
Collector-base capacitance VCB = 10 V, f = 1 MHz C
Collector-emitter capacitance VCE = 10 V, f = 1MHz C
Emitter-base capacitance VEB = 0.5 V, f = 1 MHz C
Noise figure VCE = 10 V, ZS = 50 W, f = 800 MHz,

I

= 5 mA

C

VCE = 10 V, ZS = Z

, f = 2 GHz,

Sopt

IC = 10 mA
Power gain VCE = 10 V, ZS = 50 W, ZL = Z

Lopt

,

f = 800 MHz, IC = 5 mA

Linear output voltage – two
tone intermodulation test

VCE = 10 V, ZS = 50 W, ZL = Z

f = 800 MHz, I

= 10 mA

C

VCE = 10 V, IC = 25 mA, dIM = 60 dB,

f1 = 806 MHz, f2 = 810 MHz,

Z

= ZL = 50

S

W

Lopt

,

Third order intercept point VCE = 10 V, IC = 25 mA, f = 800 MHz IP

F 1.4 dB

F 2.5 dB

G

G

V1 = V

CES
CBO
EBO

(BR)CEO

CEsat

FE
FE

T
T
cb
ce
eb

pe

pe

2

3

100mA
100 nA

10

m

16 V

0.2 0.4 V
70 100 150
70 100

4.2 GHz

5.8 GHz

0.3 pF

0.2 pF

1.2 pF

15.5 dB

16.5 dB

160 mV

27 dBm

A

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2 (10)

Document Number 85018

Rev. 3, 20-Jan-99

Common Emitter S–Parameters

3

BFP81

Vishay Semiconductors

Z0 = 50 W,T

VCE/V IC/mA f/MHz

1 2 1500 0.495 170.3 1.70 57.4 0.148 32.9 0.422 –52.1

= 25_C, unless otherwise specified

amb

S11 S21 S12 S22

LIN

MAG

100 0.882 –26.99 6.43 158.5 0.040 73.0 0.944 –13.1
300 0.702 –72.30 5.00 127.5 0.093 50.4 0.763 –29.1
500 0.579 –104.7 3.81 107.8 0.115 39.3 0.621 –35.6

800 0.496 –139.4 2.74 88.1 0.130 32.5 0.515 –40.2
1000 0.474 –156.9 2.31 78.5 0.135 31.3 0.479 –43.0
1200 0.480 –171.4 2.02 69.6 0.140 31.1 0.451 –46.1

1800 0.518 155.6 1.49 47.3 0.158 35.7 0.399 –59.3
2000 0,.541 147.6 1.38 40.8 0.169 37.8 0.388 –64.9
2200 0.567 138.6 1.29 34.7 0.182 39.6 0.378 –70.8
2500 0.599 128.1 1.17 26.1 0.207 38.5 0.363 –80.8
2800 0.633 118.4 1.08 18.2 0.230 39.8 0.359 –93.6
3000 0.649 113.2 1.03 13.9 0.249 39.0 0.350 –102.5

100 0.894 –23.2 6.52 160.8 0.027 75.5 0.960 –9.3

300 0.729 –62.8 5.27 132.3 0.066 55.0 0.832 –21.1

500 0.590 –93.5 4.16 112.8 0.084 44.3 0.719 –26.1

800 0.482 –128.6 3.04 93.4 0.097 37.9 0.631 –30.1
1000 0.445 –146.8 2.58 83.6 0.101 37.2 0.601 –32.7
1200 0.438 –163.0 2.24 74.9 0.106 37.9 0.580 –35.3

2 1500 0.448 176.6 1.90 63.0 0.113 40.7 0.555 –40.1

1800 0.467 160.8 1.64 53.3 0.123 44.7 0.537 –45.7
2000 0.489 150.7 1.52 46.9 0.133 47.3 0.529 –50.1
2200 0.514 141.4 1.43 41.0 0.146 50.0 0.522 –54.5
2500 0.541 130.2 1.30 32.0 0.168 48.6 0.509 –62.1
2800 0.577 120.0 1.19 24.5 0.190 51.1 0.508 –71.7
3000 0.599 114.6 1.13 20.1 0.208 50.6 0.492 –78.2

100 0.758 –35.5 13.77 152.1 0.025 70.5 0.903 –16.0

300 0.514 –87.7 9.17 118.5 0.051 53.8 0.660 –28.3

500 0.396 –120.7 6.36 101.2 0.064 51.0 0.540 –29.0

800 0.336 –154.3 4.30 85.4 0.082 52.5 0.477 –29.0
1000 0.322 –171.3 3.54 77.4 0.094 53.9 0.460 –30.2
1200 0.328 175.2 3.03 70.2 0.108 54.4 0.450 –32.4

5 1500 0.347 160.0 2.51 60.3 0.129 54.7 0.432 –37.0

1800 0.376 146.7 2.15 51.8 0.150 54.1 0.415 –42.5
2000 0.394 139.8 1.98 46.0 0.166 53.3 0.407 –46.8
2200 0.415 132.2 1.85 40.8 0.182 52.3 0.399 –51.1
2500 0.450 124.1 1.68 32.6 0.206 48.4 0.381 –58.9
2800 0.484 115.7 1.54 25.4 0.227 47.3 0.371 –68.4
3000 0.504 111.2 1.46 20.9 0.244 45.5 0.354 –74.9

ANG

deg deg deg deg

LIN

MAG

ANG

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MAG

ANG

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Document Number 85018
Rev. 3, 20-Jan-99

www.vishay.com

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BFP81

Vishay Semiconductors

S1 1 S21 S12 S22

VCE/V IC/mA f/MHz

100 0.899 –21.53 6.49 161.9 0.022 76.2 0.967 –7.6
300 0.743 –58.80 5.34 134.2 0.054 56.9 0.865 –17.5
500 0.600 –88.40 4.26 114.8 0.069 46.8 0.768 –21.9

800 0.480 –122.7 3.14 95.5 0.080 40.5 0.691 –25.6
1000 0.434 –141.9 2.67 85.8 0.084 40.3 0.666 –27.9
1200 0.424 –159.0 2.33 77.2 0.088 41.4 0.649 –30.3

2 1500 0.424 180.0 1.96 65.4 0.094 45.2 0.630 –35.0

1800 0.445 162.6 1.70 55.7 0.103 50.2 0.613 –40.0
2000 0.462 152.5 1.57 49.4 0.113 53.4 0.608 –43.8
2200 0.488 142.4 1.47 43.6 0.125 56.3 0.603 –47.8
2500 0.519 131.1 1.34 34.9 0.147 55.2 0.594 –54.5
2800 0.553 120.5 1.23 26.9 0.167 58.1 0.596 –62.8
3000 0.572 114.7 1.16 22.8 0.185 57.7 0.581 –68.5

100 0.773 –32.2 13.83 153.5 0.020 72.6 0.920 –12.8

300 0.527 –80.7 9.50 120.6 0.042 55.5 0.718 –22.7

500 0.388 –112.7 6.68 102.9 0.054 53.2 0.614 –23.5

800 0.312 –147.3 4.50 86.9 0.069 54.9 0.560 –24.1
1000 0.291 –166.0 3.71 79.1 0.079 56.5 0.547 –25.7
1200 0.297 179.2 3.18 72.0 0.091 57.4 0.538 –27.6

6 5 1500 0.311 162.6 2.62 62.2 0.109 58.2 0.524 –32.1

1800 0.334 148.1 2.24 53.9 0.127 58.4 0.511 –37.1
2000 0.356 140.9 2.07 48.4 0.142 58.0 0.505 –40.8
2200 0.379 133.1 1.92 43.2 0.156 57.4 0.500 –44.7
2500 0.414 124.1 1.75 34.9 0.179 53.9 0.486 –51.3
2800 0.448 115.6 1.60 27.7 0.197 53.6 0.480 –59.4
3000 0.467 111.7 1.52 23.8 0.214 51.8 0.464 –64.8

100 0.610 –46.2 21.97 144.1 0.017 68.7 0.851 –18.0

300 0.357 –103.2 12.24 110.2 0.034 60.4 0.599 –23.9

500 0.271 –135.9 7.99 95.4 0.047 62.4 0.522 –21.6

800 0.239 –169.4 5.21 82.3 0.068 64.4 0.494 –21.0
1000 0.236 173.8 4.26 75.5 0.082 64.8 0.490 –22.7
1200 0.243 162.9 3.60 69.3 0.097 64.5 0.486 –24.7

10 1500 0.265 149.9 2.96 60.5 0.119 62.9 0.474 –29.6

1800 0.287 138.6 2.51 53.0 0.140 60.9 0.461 –34.8
2000 0.306 133.6 2.32 47.7 0.156 59.2 0.455 –38.6
2200 0.329 126.8 2.15 42.9 0.171 57.8 0.449 –42.6
2500 0.368 119.2 1.96 35.2 0.194 53.3 0.430 –49.3
2800 0.403 112.7 1.79 28.3 0.214 51.8 0.421 –57.5
3000 0.418 109.4 1.69 24.2 0.229 49.7 0.404 –62.7

LIN

MAG

ANG

deg deg deg deg

LIN

MAG

ANG

LIN

MAG

ANG

LIN

MAG

ANG

www.vishay.com
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Document Number 85018

Rev. 3, 20-Jan-99