VISHAY BF998, BF998R, BF998RW User Manual

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BF998/BF998R/BF998RW

N–Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode

Electrostatic sensitive device.
Observe precautions for handling.

Applications

Input and mixer stages in UHF tuners.

Features

D

Integrated gate protection diodes

D

Low noise figure

D

Low feedback capacitance

D

High cross modulation performance

D

Low input capacitance

D

High AGC-range

D

High gain

Vishay Telefunken

21

94 9279

13 579

43

BF998 Marking: MO
Plastic case (SOT 143)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1

2

1

13 56613 654

34

BF998RW Marking: WMO
Plastic case (SOT 343R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1

21

94 9278

95 10831

43

BF998R Marking: MOR
Plastic case (SOT 143R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1

Document Number 85011
Rev. 4, 23-Jun-99

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BF998/BF998R/BF998RW

G2S

Vishay Telefunken

Absolute Maximum Ratings

T

= 25_C, unless otherwise specified

amb

Parameter Test Conditions Symbol Value Unit
Drain - source voltage V
Drain current I
Gate 1/Gate 2 - source peak current ±I
Gate 1/Gate 2 - source voltage ±V
Total power dissipation T

≤ 60 °C P

amb

Channel temperature T
Storage temperature range T

DS

D

G1/G2SM

G1S/G2S

tot
Ch
stg

Maximum Thermal Resistance

T

= 25_C, unless otherwise specified

amb

Parameter Test Conditions Symbol Value Unit

Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm

plated with 35mm Cu

3

R

thChA

12 V
30 mA
10 mA

7 V
200 mW
150

–65 to +150

450 K/W

°

C

°

C

Electrical DC Characteristics

T

= 25_C, unless otherwise specified

amb

Parameter Test Conditions Type Symbol Min Typ Max Unit

Drain - source
breakdown voltage

Gate 1 - source
breakdown voltage

Gate 2 - source
breakdown voltage

Gate 1 - source
leakage current

Gate 2 - source
leakage current

Drain current VDS = 8 V, V

Gate 1 - source
cut-off voltage

Gate 2 - source
cut-off voltage

ID = 10 mA,
–V

= –V

G1S

±I

= 10 mA,

G1S

V

= VDS = 0

G2S

±I

= 10 mA,

G2S

V

= VDS = 0

G1S

±V

= 5 V,

G1S

V

= VDS = 0

G2S

±V

= 5 V,

G2S

V

= VDS = 0

G1S

V

= 4 V

G2S

VDS = 8 V, V
ID = 20 mA

VDS = 8 V, V
ID = 20 mA

G2S

G1S

G2S

G1S

= 4 V

= 0,

= 4 V,

= 0,

BF998/BF998R/

BF998RW

BF998A/BF998RA/

BF998RAW

BF998B/BF998RB/

BF998RBW

V

(BR)DS

±V

(BR)G1SS

±V

(BR)G2SS

±I

±I

I

I

I

–V

G1S(OFF)

–V

G2S(OFF)

G1SS

G2SS

DSS

DSS

DSS

12 V

7 14 V

7 14 V

4 18 mA

4 10.5 mA

9.5 18 mA

1.0 2.0 V

0.6 1.0 V

50 nA

50 nA

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Document Number 85011

Rev. 4, 23-Jun-99

Electrical AC Characteristics

g

g

BF998/BF998R/BF998RW

Vishay Telefunken

VDS = 8 V, ID = 10 mA, V

= 4 V, f = 1 MHz , T

G2S

= 25_C, unless otherwise specified

amb

Parameter Test Conditions Symbol Min Typ Max Unit
Forward transadmittance y
Gate 1 input capacitance C
Gate 2 input capacitance V

G1S

= 0, V

= 4 V C

G2S

Feedback capacitance C
Output capacitance C
Power gain GS = 2 mS, GL = 0.5 mS, f = 200 MHz G

GS = 3,3 mS, GL = 1 mS, f = 800 MHz G

AGC range V

= 4 to –2 V, f = 800 MHz

G2S

 21 24 mS

21s

2.1 2.5 pF

1.1 pF
25 fF

1.05 pF
28 dB

40 dB

D

issg1
issg2

rss

oss

ps
ps

G

ps

16.5 20 dB

Noise figure GS = 2 mS, GL = 0.5 mS, f = 200 MHz F 1.0 dB

GS = 3,3 mS, GL = 1 mS, f = 800 MHz F 1.5 dB

Document Number 85011
Rev. 4, 23-Jun-99

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BF998/BF998R/BF998RW

Vishay Telefunken

Typical Characteristics (T

300

250

200

150

100

50

tot

P – Total Power Dissipation ( mW )

0

0 20 40 60 80 100 120 140 160

T

– Ambient Temperature ( °C )96 12159

amb

Figure 1. Total Power Dissipation vs.

Ambient Temperature

30

V

V

=4V

G2S

25

20

G1S

= 25_C unless otherwise specified)

amb

20

VDS=8V

16

12

8

D

I – Drain Current ( mA )

4

0

–0.6 –0.2 0.2 0.6 1.0 1.4

V

– Gate 2 Source Voltage ( V )12817

G2S

Figure 4. Drain Current vs. Gate 2 Source Voltage

3.0

=0.6V

0.4V

2.5

2.0

VDS=8V

V

=4V

G2S

f=1MHz

5V

4V

3V

2V

1V

0

V

=–1V

G1S

15

10

D

I – Drain Current ( mA )

5

0

0246810

VDS – Drain Source Voltage ( V )12812

0.2V

0
–0.2V
–0.4V

Figure 2. Drain Current vs. Drain Source Voltage

20

VDS=8V

16

12

8

D

4

I – Drain Current ( mA )

0

–0.8 –0.4 0.0 0.4 0.8 1.2

V

G1S

6V

5V

4V

– Gate 1 Source Voltage ( V )12816

3V

2V

1V

0

V

=–1V

G2S

Figure 3. Drain Current vs. Gate 1 Source Voltage

1.5

1.0

0.5

issg1

C – Gate 1 Input Capacitance ( pF )

0

–2 –1.5 –1.0 –0.5 0.0 0.5 1.0 1.5

V

– Gate 1 Source Voltage ( V )12863

G1S

Figure 5. Gate 1 Input Capacitance vs.

Gate 1 Source Voltage

3.0

V

=4V

2.5

2.0

1.5

1.0

oss

0.5

C – Output Capacitance ( pF )

0

24681012

VDS – Drain Source Voltage ( V )12864

G2S

f=1MHz

Figure 6. Output Capacitance vs. Drain Source Voltage

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Document Number 85011

Rev. 4, 23-Jun-99

BF998/BF998R/BF998RW

Vishay Telefunken

10

f=800MHz

0

–10

4V
3V

2V

1V

0

–20

–0.2V

–30

2

21

–40

S – Transducer Gain ( dB )

–0.4V

V

=–0.8V

G2S

–50

–1 –0.5 0.0 0.5 1.0 1.5

V

– Gate 1 Source Voltage ( V )12818

G1S

Figure 7. Transducer Gain vs. Gate 1 Source Voltage

32

VDS=8V

28

f=1MHz

24
20
16
12

8
4

21s

y – Forward Transadmittance ( mS )

0

0

1V

0 4 8 1216202428

ID – Drain Current ( mA )12819

V

=4V

G2S

3V

2V

5
0

f=100...1300MHz

–5
–10
–15
–20

21

Im ( y ) ( mS )

20mA
–25
–30

VDS=8V

V

=4V

G2S

ID=5mA

10mA

f=100MHz

400MHz

700MHz

1000MHz

–35
–40

1300MHz

0 4 8 12 16 20 24 28 32

Re (y21) ( mS )12821

Figure 10. Short Circuit Forward Transfer Admittance

9
8
7
6
5
4

22

3

Im ( y ) ( mS )

2
1

100MHz

0

0 0.25 0.50 0.75 1.00 1.25 1.50

f=1300MHz

400MHz

Re (y22) ( mS )12822

1000MHz

700MHz

f=100...1300MHz

VDS=15V
V

=4V

G2S

I

=10mA

D

Figure 8. Forward Transadmittance vs. Drain Current

20
18
16
14
12
10

11

8
6

Im ( y ) ( mS )

4
2

700MHz

400MHz

100MHz

0

02468101214

f=1300MHz

1000MHz

Re (y11) ( mS )12820

VDS=8V

=4V

V

G2S

I

=10mA

D

f=100...1300MHz

Figure 9. Short Circuit Input Admittance

Document Number 85011
Rev. 4, 23-Jun-99

Figure 11. Short Circuit Output Admittance

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BF998/BF998R/BF998RW

ÁÁ

Vishay Telefunken

VDS = 8 V, ID = 10 mA, V

S

11

j

j0.5

j0.2

S

0

–j0.2

21

0.2

0.5

–j0.5

12 960

1

1300MHz

–j

2

1000

Figure 12. Input reflection coefficient

= 4 V , Z0 = 50

G2S

j2

j5

5

–j2

1

100

–j5

W

S

12

90°

120°

150°

1300MHz

180°

–150°

–120° –60°

12 973

Figure 14. Reverse transmission coefficient

S

22

1200

200

100

–90°

60°

0.08 0.16

30°

0°

–30°

90°

100

180°

150°

–150°

12 962

120°

400

–120° –60°

700

–90°

60°

1000

1300MHz

1 2

Figure 13. Forward transmission coefficient

30°

–30°

j

j0.5

j0.2

0°

0

–j0.2

12 963

–j0.5

0.2

0.5

1

1300MHz

–j

j2

j5

2

5

–j2

100

1

–j5

Figure 15. Output reflection coefficient

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Document Number 85011

Rev. 4, 23-Jun-99

Dimensions of BF998 in mm

BF998/BF998R/BF998RW

Vishay Telefunken

Dimensions of BF998R in mm

96 12240

Document Number 85011
Rev. 4, 23-Jun-99

96 12239

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7 (9)

BF998/BF998R/BF998RW

Vishay Telefunken

Dimensions of BF998RW in mm

96 12238

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Document Number 85011

Rev. 4, 23-Jun-99

BF998/BF998R/BF998RW

Vishay Telefunken

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their

impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as

ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and

forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application

by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the

buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or

indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Document Number 85011
Rev. 4, 23-Jun-99

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: [phone], Fax number: 49 (0)7131 67 2423

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