VISHAY BF995 Technical data

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N–Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode

Electrostatic sensitive device.
Observe precautions for handling.

Applications

Input- and mixer stages especially for FM- and VHF TV-tuners up to 300 MHz.

Features

D

Integrated gate protection diodes

D

High cross modulation performance

D

Low noise figure

D

High AGC-range

D

Low feedback capacitance

BF995

Vishay Telefunken

21

94 9279

13 579

G

2

G

1

43

BF995 Marking: MB
Plastic case (SOT 143)
1=Source, 2=Drain, 3=Gate 2, 4=Gate 1

12623

Absolute Maximum Ratings

T

= 25_C, unless otherwise specified

amb

Parameter Test Conditions Type Symbol Value Unit
Drain - source voltage V
Drain current I
Gate 1/Gate 2 - source peak current ±I
Total power dissipation T
Channel temperature T
Storage temperature range T

≤ 60 °C P

amb

DS

D

G1/G2SM

tot
Ch
stg

D

20 V
30 mA

10 mA
200 mW
150

–55 to +150

S

°

C

°

C

Maximum Thermal Resistance

T

= 25_C, unless otherwise specified

amb

Parameter Test Conditions Symbol Value Unit

Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm

plated with 35mm Cu

Document Number 85009
Rev. 3, 20-Jan-99

3

R

thChA

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BF995

DS G1S G2S

Vishay Telefunken

Electrical DC Characteristics

T

= 25_C, unless otherwise specified

amb

Parameter Test Conditions Type Symbol Min Typ Max Unit

Drain - source
breakdown voltage

Gate 1 - source
breakdown voltage

Gate 2 - source
breakdown voltage

Gate 1 - source
leakage current

Gate 2 - source
leakage current

Drain current VDS = 15 V, V

Gate 1 - source
cut-off voltage

Gate 2 - source
cut-off voltage

ID = 10 mA, –V

±I

= 10 mA, V

G1S

±I

= 10 mA, V

G2S

±V

= 5 V, V

G1S

±V

= 5 V, V

G2S

VDS = 15 V, V

VDS = 15 V, V

= –V

G1S

G2S

G1S

= VDS = 0 ±I

G2S

= VDS = 0 ±I

G1S

= 0, V

G1S

= 4 V V

G2S

= VDS = 0 ±V

= VDS = 0 ±V

= 4 V BF995 I

G2S

BF995A I
BF995B I

= 4 V, ID = 20 mA –V

G2S

= 0, ID = 20 mA –V

G1S

(BR)DS

(BR)G1SS

(BR)G2SS

G1SS

G2SS

DSS
DSS
DSS

G1S(OFF)

G2S(OFF)

20 V

8 14 V

8 14 V

4 18 mA
4 10.5 mA

9.5 18 mA

100 nA

100 nA

3.5 V

3.5 V

Electrical AC Characteristics

VDS = 15 V, ID = 10 mA, V

Parameter Test Conditions Symbol Min Typ Max Unit
Forward transadmittance y
Gate 1 input capacitance C
Gate 2 input capacitance V
Feedback capacitance C
Output capacitance C
Power gain GS = 2 mS, GL = 0.5 mS, f = 200 MHz G
AGC range V
Noise figure GS = 2 mS, GL = 0.5 mS, f = 200 MHz F 1.8 2.5 dB

= 4 V, f = 1 MHz , T

G2S

= 0, V

G1S

G2S

G2S

= 4 to –2 V, f = 200 MHz

= 25_C, unless otherwise specified

amb

= 4 V C

 12 15 mS

21s

3.7 pF

1.6 pF
25 fF

1.6 pF
20 dB
50 dB

D

issg1
issg2

rss

oss

ps

G

ps

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Document Number 85009

Rev. 3, 20-Jan-99

BF995

Vishay Telefunken

Typical Characteristics (T

300

250

200

150

100

50

tot

P – Total Power Dissipation ( mW )

0

0 20 40 60 80 100 120 140 160

T

– Ambient Temperature ( °C )96 12159

amb

amb

Figure 1. Total Power Dissipation vs.

Ambient Temperature

22
20
18
16
14
12
10

8
6

D

I – Drain Current ( mA )

4
2
0

0 2 4 6 8 10 12 14 16 18 20 22 24

VDS – Drain Source Voltage ( V )96 12160

V

=0.6V

G1S

0.4V

0.2V

0

–0.2V

–0.4V

–0.6V

–0.8V

Figure 2. Drain Current vs. Drain Source Voltage

= 25_C unless otherwise specified)

22

VDS=15V

20

f=1MHz

18
16
14
12
10

8
6
4
2

21S

Y – Forward Transadmittance ( mS )

0

–2.0–1.5–1.0–0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

V

G1S

0V

– Gate 1 Source Voltage ( V )96 12162

Figure 4. Forward Transadmittance vs.

Gate 1 Source Voltage

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

issg1

C – Gate 1 Input Capacitance ( pF )

0

–2.0–1.5–1.0–0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0

V

– Gate 1 Source Voltage ( V )96 12163

G1S

Figure 5. Gate 1 Input Capacitance vs.

Gate 1 Source Voltage

V

VDS=15V
V

G2S

f=1MHz

G2S

=4V

=5V

4V

3V
2V

1V

24
22

VDS=15V

20

I

=10mA

DS

18
16
14
12
10

8
6
4

21S

2

Y – Forward Transadmittance ( mS )

0

–2–10123456

V

– Gate 2 Source Voltage ( V )96 12161

G2S

Figure 3. Forward Transadmittance vs.

Gate 2 Source Voltage

Document Number 85009
Rev. 3, 20-Jan-99

4.0

V

=0.5V

G1S

0V

–0.5V

3.6

3.2

2.8

2.4

2.0

1.6

1.2

0.8

0.4

issg2

C – Gate 2 Input Capacitance ( pF )

0

–2–101234567

V

– Gate 2 Source Voltage ( V )96 12164

G2S

VDS=15V

V

=0

G1S

f=1MHz

Figure 6. Gate 2 Input Capacitance vs.

Gate 2 Source Voltage

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