VISHAY BF995 Technical data

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N–Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode

Electrostatic sensitive device.
Observe precautions for handling.

Applications

Input- and mixer stages especially for FM- and VHF TV-tuners up to 300 MHz.

Features

D

Integrated gate protection diodes

D

High cross modulation performance

D

Low noise figure

D

High AGC-range

D

Low feedback capacitance

BF995

Vishay Telefunken

21

94 9279

13 579

G

2

G

1

43

BF995 Marking: MB
Plastic case (SOT 143)
1=Source, 2=Drain, 3=Gate 2, 4=Gate 1

12623

Absolute Maximum Ratings

T

= 25_C, unless otherwise specified

amb

Parameter Test Conditions Type Symbol Value Unit
Drain - source voltage V
Drain current I
Gate 1/Gate 2 - source peak current ±I
Total power dissipation T
Channel temperature T
Storage temperature range T

≤ 60 °C P

amb

DS

D

G1/G2SM

tot
Ch
stg

D

20 V
30 mA

10 mA
200 mW
150

–55 to +150

S

°

C

°

C

Maximum Thermal Resistance

T

= 25_C, unless otherwise specified

amb

Parameter Test Conditions Symbol Value Unit

Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm

plated with 35mm Cu

Document Number 85009
Rev. 3, 20-Jan-99

3

R

thChA

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450 K/W

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BF995

DS G1S G2S

Vishay Telefunken

Electrical DC Characteristics

T

= 25_C, unless otherwise specified

amb

Parameter Test Conditions Type Symbol Min Typ Max Unit

Drain - source
breakdown voltage

Gate 1 - source
breakdown voltage

Gate 2 - source
breakdown voltage

Gate 1 - source
leakage current

Gate 2 - source
leakage current

Drain current VDS = 15 V, V

Gate 1 - source
cut-off voltage

Gate 2 - source
cut-off voltage

ID = 10 mA, –V

±I

= 10 mA, V

G1S

±I

= 10 mA, V

G2S

±V

= 5 V, V

G1S

±V

= 5 V, V

G2S

VDS = 15 V, V

VDS = 15 V, V

= –V

G1S

G2S

G1S

= VDS = 0 ±I

G2S

= VDS = 0 ±I

G1S

= 0, V

G1S

= 4 V V

G2S

= VDS = 0 ±V

= VDS = 0 ±V

= 4 V BF995 I

G2S

BF995A I
BF995B I

= 4 V, ID = 20 mA –V

G2S

= 0, ID = 20 mA –V

G1S

(BR)DS

(BR)G1SS

(BR)G2SS

G1SS

G2SS

DSS
DSS
DSS

G1S(OFF)

G2S(OFF)

20 V

8 14 V

8 14 V

4 18 mA
4 10.5 mA

9.5 18 mA

100 nA

100 nA

3.5 V

3.5 V

Electrical AC Characteristics

VDS = 15 V, ID = 10 mA, V

Parameter Test Conditions Symbol Min Typ Max Unit
Forward transadmittance y
Gate 1 input capacitance C
Gate 2 input capacitance V
Feedback capacitance C
Output capacitance C
Power gain GS = 2 mS, GL = 0.5 mS, f = 200 MHz G
AGC range V
Noise figure GS = 2 mS, GL = 0.5 mS, f = 200 MHz F 1.8 2.5 dB

= 4 V, f = 1 MHz , T

G2S

= 0, V

G1S

G2S

G2S

= 4 to –2 V, f = 200 MHz

= 25_C, unless otherwise specified

amb

= 4 V C

 12 15 mS

21s

3.7 pF

1.6 pF
25 fF

1.6 pF
20 dB
50 dB

D

issg1
issg2

rss

oss

ps

G

ps

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Document Number 85009

Rev. 3, 20-Jan-99

BF995

Vishay Telefunken

Typical Characteristics (T

300

250

200

150

100

50

tot

P – Total Power Dissipation ( mW )

0

0 20 40 60 80 100 120 140 160

T

– Ambient Temperature ( °C )96 12159

amb

amb

Figure 1. Total Power Dissipation vs.

Ambient Temperature

22
20
18
16
14
12
10

8
6

D

I – Drain Current ( mA )

4
2
0

0 2 4 6 8 10 12 14 16 18 20 22 24

VDS – Drain Source Voltage ( V )96 12160

V

=0.6V

G1S

0.4V

0.2V

0

–0.2V

–0.4V

–0.6V

–0.8V

Figure 2. Drain Current vs. Drain Source Voltage

= 25_C unless otherwise specified)

22

VDS=15V

20

f=1MHz

18
16
14
12
10

8
6
4
2

21S

Y – Forward Transadmittance ( mS )

0

–2.0–1.5–1.0–0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

V

G1S

0V

– Gate 1 Source Voltage ( V )96 12162

Figure 4. Forward Transadmittance vs.

Gate 1 Source Voltage

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

issg1

C – Gate 1 Input Capacitance ( pF )

0

–2.0–1.5–1.0–0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0

V

– Gate 1 Source Voltage ( V )96 12163

G1S

Figure 5. Gate 1 Input Capacitance vs.

Gate 1 Source Voltage

V

VDS=15V
V

G2S

f=1MHz

G2S

=4V

=5V

4V

3V
2V

1V

24
22

VDS=15V

20

I

=10mA

DS

18
16
14
12
10

8
6
4

21S

2

Y – Forward Transadmittance ( mS )

0

–2–10123456

V

– Gate 2 Source Voltage ( V )96 12161

G2S

Figure 3. Forward Transadmittance vs.

Gate 2 Source Voltage

Document Number 85009
Rev. 3, 20-Jan-99

4.0

V

=0.5V

G1S

0V

–0.5V

3.6

3.2

2.8

2.4

2.0

1.6

1.2

0.8

0.4

issg2

C – Gate 2 Input Capacitance ( pF )

0

–2–101234567

V

– Gate 2 Source Voltage ( V )96 12164

G2S

VDS=15V

V

=0

G1S

f=1MHz

Figure 6. Gate 2 Input Capacitance vs.

Gate 2 Source Voltage

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BF995

Vishay Telefunken

3.0
V

=4V

G2S

2.5

f=1MHz

2.0

1.5

1.0

oss

0.5

C – Output Capacitance ( pF )

0

0 2 4 6 8 10121416182022

VDS – Drain Source Voltage ( V )96 12165

Figure 7. Output Capacitance vs. Drain Source Voltage

18

600MHz

400MHz

Re (y11) ( mS )96 12166

f=700MHz

500MHz

I

D

f=50...700MHz

VDS=15V
V

=4V

G2S

=5...20mA

16
14
12
10

8

11

6

Im ( y ) ( mS )

4
2
0

012345678910

300MHz

200MHz

100MHz

Figure 8. Short Circuit Input Admittance

10

VDS=15V

5

V

=4V

G2S

f=50...700MHz

0

–5

–10

21

–15

Im ( y ) ( mS )

–20
–25
–30

0246810121416182022242628

ID=5mA

10mA

20mA

500MHz

600MHz

700MHz

Re (y21) ( mS )96 12167

f=50MHz

100MHz

200MHz

300MHz

400MHz

Figure 9. Short Circuit Forward Transfer Admittance

7.0

6.5

6.0

5.5

5.0

4.5

4.0

3.5

3.0

22

2.5

Im ( y ) ( mS )

2.0

1.5

1.0

0.5

ID=5mA

400MHz

300MHz

200MHz

100MHz

0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

Re (y22) ( mS )96 12168

f=700MHz

600MHz

500MHz

ID=20mA

I

D

f=50...700MHz

VDS=15V
V

=4V

G2S

=5...20mA

Figure 10. Short Circuit Output Admittance

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Document Number 85009

Rev. 3, 20-Jan-99

BF995

Vishay Telefunken

VDS = 15 V, ID = 5 to 20 mA, V

S

11

j

S

21

j0.5

j0.2

0

–j0.2

12 920

0.2

–j0.5

0.5

1

700 MHz

–j

Figure 11. Input reflection coefficient

90°

120° 60°

500

j2

2

5

300

–j2

= 4 V , Z0 = 50

G2S

j5

1

50

100

–j5

W

S

12

90°

120°

150°

300

700MHz

180°

–150°

–120° –60°

12 921

Figure 13. Reverse transmission coefficient

S

22

j0.5

600

–90°

j

60°

0.04 0.08

j2

30°

0°

–30°

400

200

50

180°

–150°

–120° –60°

12 922

700MHz

0.8 1.6

–90°

Figure 12. Forward transmission coefficient

30°

ID= 20mA

10mA

–30°

5mA

–30°

j0.2

0°

0

–j0.2

12 923

0.2

–j0.5

0.5

1

–j

2

700 MHz

–j2

5

500

j5

1

100

300

–j5

Figure 14. Output reflection coefficient

Document Number 85009
Rev. 3, 20-Jan-99

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BF995

Vishay Telefunken

Dimensions in mm

96 12240

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Document Number 85009

Rev. 3, 20-Jan-99

BF995

Vishay Telefunken

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their

impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as

ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and

forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application

by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the

buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or

indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Document Number 85009
Rev. 3, 20-Jan-99

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: [phone], Fax number: 49 (0)7131 67 2423

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