VISHAY BF988 Technical data

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N–Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode

Electrostatic sensitive device.
Observe precautions for handling.

Applications

Input- and mixer stages especially VHF- and UHF- tuners.

Features

D

Integrated gate protection diodes

D

High cross modulation performance

D

Low noise figure

D

High gain

D

High AGC-range

D

Low feedback capacitance

D

Low input capacitance

BF988

Vishay Telefunken

2

94 9307

3

4

96 12647

1

G

2

G

1

BF988 Marking: BF988
Plastic case (TO 50)

12623

1 = Drain, 2 = Source, 3 = Gate 1, 4 = Gate 2

Absolute Maximum Ratings

T

= 25_C, unless otherwise specified

amb

Parameter Test Conditions Type Symbol Value Unit
Drain - source voltage V
Drain current I
Gate 1/Gate 2 - source peak current ±I
Total power dissipation T
Channel temperature T
Storage temperature range T

≤ 60 °C P

amb

DS

D

G1/G2SM

tot
Ch
stg

D

12 V
30 mA

10 mA
200 mW
150

–55 to +150

S

°

C

°

C

Maximum Thermal Resistance

T

= 25_C, unless otherwise specified

amb

Parameter Test Conditions Symbol Value Unit

Channel ambient on glass fibre printed board (40 x 25 x 1.5) mm

plated with 35mm Cu

Document Number 85007
Rev. 4, 08-Jul-99

3

R

thChA

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450 K/W

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BF988

DS G1S

Vishay Telefunken

Electrical DC Characteristics

T

= 25_C, unless otherwise specified

amb

Parameter Test Conditions Type Symbol Min Typ Max Unit

Drain - source
breakdown voltage

Gate 1 - source
breakdown voltage

Gate 2 - source
breakdown voltage

Gate 1 - source
leakage current

Gate 2 - source
leakage current

Drain current VDS = 15 V, V

Gate 1 - source
cut-off voltage

Gate 2 - source
cut-off voltage

ID = 10 mA,
–V

= –V

±I
V

±I
V

±V
V

±V
V

V

G1S

G1S

G2S

G2S

G1S

G1S

G2S

G2S

G1S

G2S

G2S

= 10 mA,

= VDS = 0

= 10 mA,

= VDS = 0

= 5 V,

= VDS = 0

= 5 V,

= VDS = 0

= 4 V

VDS = 15 V, V
ID = 20 mA

VDS = 15 V, V
ID = 20 mA

= 4 V

= 0, BF988 I

G1S

BF988A I
BF988B I

= 4 V,

G2S

= 0,

G1S

V

(BR)DS

±V

(BR)G1SS

±V

(BR)G2SS

±I

±I

–V

G1S(OFF)

–V

G2S(OFF)

G1SS

G2SS

DSS
DSS
DSS

12 V

7 14 V

7 14 V

4 18 mA
4 10.5 mA

9.5 18 mA

50 nA

50 nA

2.5 V

2.0 V

Electrical AC Characteristics

VDS = 8 V, ID = 10 mA, V

Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward transadmittance y
Gate 1 input capacitance C
Gate 2 input capacitance V
Feedback capacitance C
Output capacitance C
Power gain GS = 2 mS, GL = 0.5 mS,

AGC range V

Noise figure GS = 2 mS, GL = 0.5 mS,

= 4 V, f = 1 MHz , T

G2S

G1S

= 0, V

= 4 V C

G2S

f = 200 MHz
GS = 3,3 mS, GL = 1 mS,

f = 800 MHz

= 4 to –2 V,

G2S

f = 800 MHz

f = 200 MHz
GS = 3,3 mS, GL = 1 mS,

f = 800 MHz

= 25_C, unless otherwise specified

amb

 21 24 mS

21s

2.1 2.5 pF

1.2 pF
25 fF

1.05 pF
28 dB

40 dB

G

G

D

issg1
issg2

rss

oss

ps

ps

G

ps

16.5 20 dB

F 1 dB

F 1.5 dB

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Document Number 85007

Rev. 4, 08-Jul-99

Common Source S–Parameters

BF988

Vishay Telefunken

VDS , = 8 V , V

ID/mA f/MHz

5 700 –1.59 –50.9 4.54 100.4 –47.31 58.6 –0.43 –23.8

10 700 –1.76 –53.2 6.27 101.9 –46.51 57.4 –0.48 –24.1

15 700 –1.85 –54.1 6.98 102.6 –45.72 57.0 –0.53 –24.2

= 4 V , Z0 = 50 W,T

G2S

S11 S21 S12 S22

LOG

MAG

dB deg dB deg dB deg dB deg
100 –0.02 –7.8 6.01 168.4 –56.27 83.0 –0.02 –3.6
200 –0.10 –15.3 5.87 156.3 –50.61 76.6 –0.06 –7.3
300 –0.31 –22.8 5.69 144.2 –47.70 70.9 –0.13 –10.6
400 –0.56 –30.2 5.42 132.9 –46.19 65.6 –0.20 –14.2
500 –0.87 –37.3 5.17 121.5 –45.46 60.6 –0.28 –17.5
600 –1.26 –44.3 4.85 110.6 –45.84 55.4 –0.36 20.5

800 –2.04 –58.0 4.25 90.2 –48.19 63.3 –0.49 –26.8
900 –2.42 –64.4 4.02 80.6 –50.37 81.5 –0.52 –30.2

1000 –2.88 –71.4 3.78 70.8 –49.48 115.6 –0.54 –33.4

1100 –3.39 –78.3 3.42 60.5 47.92 131.7 –0.66 –36.8
1200 –3.94 –85.2 3.21 51.6 –44.65 153.0 –0.66 –40.1
1300 –4.46 –91.8 3.01 42.0 –41.76 159.8 –0.66 –43.9

100 –0.02 –8.3 7.84 168.5 –55.67 83.0 –0.04 –3.7
200 –0.11 –16.1 7.70 156.6 –50.01 76.4 –0.09 –7.4
300 –0.35 –24.0 7.49 144.8 –47.20 70.3 –0.16 –10.8
400 –0.62 –31.6 7.21 133.6 –45.60 65.1 –0.23 –14.3
500 –0.97 –39.2 6.93 122.5 –44.88 60.0 –0.31 17.9
600 –1.39 –46.4 6.59 111.9 –45.25 54.5 –0.42 –20.9

800 –2.25 –60.3 5.97 92.1 –47.19 61.4 –0.55 –27.3
900 –2.67 –67.1 5.71 82.8 –49.28 76.0 –0.58 –30.6

1000 –3.16 –74.1 5.46 73.3 –48.99 107.1 –0.60 –33.8

1100 –3.72 –81.1 5.07 63.3 –48.03 123.3 –0.73 –37.2
1200 –4.30 –88.0 4.85 54.6 –45.15 147.6 –0.73 –40.6
1300 –4.87 –94.4 4.63 45.4 –42.46 157.0 –0.73 –44.3

100 –0.01 –8.4 8.62 168.6 –55.26 83.0 –0.07 –3.7
200 –0.13 –16.4 8.46 156.8 –49.61 76.3 –0.12 –7.5

3000 –0.37 –24.5 8.26 145.2 –46.70 70.3 –0.20 –11.0

400 –0.66 –32.3 7.96 134.0 –45.10 64.9 –0.27 –14.4
500 –1.02 –39.8 7.66 122.9 –44.38 59.7 –0.36 –18.0
600 –1.47 –47.0 7.33 112.3 –44.65 54.3 –0.47 –20.9

800 –2.36 –61.3 6.68 92.8 –46.29 60.0 –0.61 –27.4
900 –2.80 –67.9 6.42 83.7 –48.18 71.9 –0.64 –30.6

1000 –3.30 –75.0 6.15 74.3 –48.49 98.7 –0.66 –33.9

1100 3.89 –82.0 5.75 64.6 –47.93 114.8 ––0.77 –37.3
1200 –4.49 –88.8 5.52 56.0 –45.75 141.2 –0.79 –40.8
1300 –5.06 –95.2 5.30 46.9 –43.05 153.4 –0.79 –44.5

= 25_C, unless otherwise specified

amb

ANG LOG

MAG

ANG LOG

MAG

ANG LOG

MAG

ANG

Document Number 85007
Rev. 4, 08-Jul-99

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BF988

Vishay Telefunken

Typical Characteristics (T

300

250

200

150

100

50

tot

P – Total Power Dissipation ( mW )

0

0 20 40 60 80 100 120 140 160

T

– Ambient Temperature ( °C )96 12159

amb

Figure 1. Total Power Dissipation vs.

Ambient Temperature

30

V

V

=4V

G2S

25

20

15

10

D

I – Drain Current ( mA )

5

0

0246810

VDS – Drain Source Voltage ( V )12812

Figure 2. Drain Current vs.

Drain Source Voltage

G1S

= 25_C unless otherwise specified)

amb

20

VDS=8V

16

12

8

D

I – Drain Current ( mA )

4

0

–0.6 –0.2 0.2 0.6 1.0 1.4

V

– Gate 2 Source Voltage ( V )12817

G2S

Figure 4. Drain Current vs. Gate 2 Source Voltage

2.8

=0.6V

0.4V

0.2V

–0.2V
–0.4V

0

issg1

C – Gate 1 Input Capacitance ( pF )

VDS=8V

2.4

V

=4V

G2S

f=1MHz

2.0

1.6

1.2

0.8

0.4

0

–2 –1.5 –1.0 –0.5 0.0 0.5 1.0 1.5

V

– Gate 1 Source Voltage ( V )12813

G1S

Figure 5. Gate 1 Input Capacitance vs.

Gate 1 Source Voltage

5V

4V

3V

2V

1V

0

V

=–1V

G1S

20

VDS=8V

16

12

8

D

4

I – Drain Current ( mA )

0

–0.8 –0.4 0.0 0.4 0.8 1.2

V

G1S

6V

5V

4V

– Gate 1 Source Voltage ( V )12816

3V

2V

1V

0

V

=–1V

G2S

Figure 3. Drain Current vs. Gate 1 Source Voltage

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2.8
VDS=8V

2.4

V

=0

G1S

f=1MHz

2.0

1.6

1.2

0.8

0.4

issg2

C – Gate 2 Input Capacitance ( pF )

0

–1012345

V

– Gate 2 Source Voltage ( V )12814

G2S

Figure 6. Gate 2 Input Capacitance vs.

Gate 2 Source Voltage

Document Number 85007

Rev. 4, 08-Jul-99

BF988

Vishay Telefunken

4.0

V

=4V

3.2

G2S

V

=0

G1S

f=1MHz

2.4

1.6

0.8

oss

C – Output Capacitance ( pF )

0

24681012

VDS – Drain Source Voltage ( V )12815

Figure 7. Output Capacitance vs. Drain Source Voltage

10

f=800MHz

0

–10

–20

–30

2

21

–40

S – Transducer Gain ( dB )

–50

–1 –0.5 0.0 0.5 1.0 1.5

V

– Gate 1 Source Voltage ( V )12818

G1S

V

G2S

4V
3V

2V

1V

0

–0.2V

–0.4V

=–0.8V

Figure 8. Transducer Gain vs. Gate 1 Source Voltage

20
18

f=1300MHz

16
14

1000MHz

12
10

11

8
6

Im ( y ) ( mS )

4
2

400MHz

100MHz

700MHz

VDS=8V

V

=4V

G2S

I

=10mA

D

f=100...1300MHz

0

02468101214

Re (y11) ( mS )12820

Figure 10. Short Circuit Input Admittance

5
0

–5
–10
–15
–20

21

–25

Im ( y ) ( mS )

–30
–35
–40

VDS=8V

V

=4V

G2S

f=100...1300MHz

f=100MHz

ID=5mA

10mA

400MHz

20mA

700MHz

1000MHz

1300MHz

0 4 8 12 16 20 24 28 32

Re (y21) ( mS )12821

Figure 11. Short Circuit Forward Transfer Admittance

32

V

28
24

VDS=8V
f=1MHz

G2S

=4V

3V
20
16
12

2V

8
4

21s

y – Forward Transadmittance ( mS )

0

0

1V

0 4 8 1216202428

ID – Drain Current ( mA )12819

Figure 9. Forward Transadmittance vs. Drain Current

Document Number 85007
Rev. 4, 08-Jul-99

9
8

f=1300MHz

7
6

1000MHz

5

400MHz

700MHz

f=100...1300MHz

VDS=15V

=4V

V

G2S

I

=10mA

D

4

22

3

Im ( y ) ( mS )

2
1

100MHz

0

0 0.25 0.50 0.75 1.00 1.25 1.50

Re (y22) ( mS )12822

Figure 12. Short Circuit Output Admittance

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BF988

Vishay Telefunken

VDS = 8 V, ID = 10 mA, V

S

11

j

j0.5

j0.2

S

0

–j0.2

21

0.2

0.5

1

2

1300MHz

–j0.5

12 960

1000

–j

Figure 13. Input reflection coefficient

90°

120°

400

150°

700

1000

= 4 V , Z0 = 50

G2S

j2

j5

5

–j2

60°

1300MHz

1

100

–j5

30°

W

S

12

90°

120°

150°

1300MHz

180°

–150°

–120° –60°

12 961

Figure 15. Reverse transmission coefficient

S

22

j0.5

j0.2

1000

300

100

–90°

j

60°

0.04 0.08

j2

30°

0°

–30°

j5

100

180°

–150°

12 962

–120° –60°

–90°

1 2

Figure 14. Forward transmission coefficient

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–30°

0°

0

–j0.2

12 963

–j0.5

0.2

0.5

1

–j

2

1300MHz

5

–j2

100

1

–j5

Figure 16. Output reflection coefficient

Document Number 85007

Rev. 4, 08-Jul-99

Dimensions in mm

BF988

Vishay Telefunken

96 12242

Document Number 85007
Rev. 4, 08-Jul-99

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BF988

Vishay Telefunken

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their

impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as

ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and

forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application

by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the

buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or

indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: [phone], Fax number: 49 (0)7131 67 2423

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Document Number 85007

Rev. 4, 08-Jul-99