VISHAY BF966S Technical data

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N–Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode

Electrostatic sensitive device.
Observe precautions for handling.

Applications

Input- and mixer stages especially UHF-tuners.

Features

D

Integrated gate protection diodes

D

High cross modulation performance

D

Low noise figure

D

High AGC-range

D

Low feedback capacitance

D

Low input capacitance

BF966S

Vishay Telefunken

2

94 9307

3

4

96 12647

1

G

2

G

1

BF966S Marking: BF966S
Plastic case (TO 50)

12623

1=Drain, 2=Source, 3=Gate 1, 4=Gate 2

Absolute Maximum Ratings

T

= 25_C, unless otherwise specified

amb

Parameter Test Conditions Type Symbol Value Unit
Drain - source voltage V
Drain current I
Gate 1/Gate 2 - source peak current ±I
Total power dissipation T
Channel temperature T
Storage temperature range T

≤ 60 °C P

amb

DS

D

G1/G2SM

tot
Ch
stg

D

20 V
30 mA

10 mA
200 mW
150

–55 to +150

S

°

C

°

C

Maximum Thermal Resistance

T

= 25_C, unless otherwise specified

amb

Parameter Test Conditions Symbol Value Unit

Channel ambient on glass fibre printed board (40 x 25 x 1.5) mm

plated with 35mm Cu

Document Number 85004
Rev. 3, 20-Jan-99

3

R

thChA

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450 K/W

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BF966S

DS G1S G2S

g

g

Vishay Telefunken

Electrical DC Characteristics

T

= 25_C, unless otherwise specified

amb

Parameter Test Conditions Type Symbol Min Typ Max Unit

Drain - source
breakdown voltage

Gate 1 - source
breakdown voltage

Gate 2 - source
breakdown voltage

Gate 1 - source
leakage current

Gate 2 - source
leakage current

Drain current VDS = 15 V, V

Gate 1 - source
cut-off voltage

Gate 2 - source
cut-off voltage

ID = 10 mA, –V

±I

= 10 mA, V

G1S

±I

= 10 mA, V

G2S

±V

= 5 V, V

G1S

±V

= 5 V, V

G2S

VDS = 15 V, V

VDS = 15 V, V

= –V

G1S

G2S

G1S

= VDS = 0 ±I

G2S

= VDS = 0 ±I

G1S

= 0, V

G1S

= 4 V V

G2S

= VDS = 0 ±V

= VDS = 0 ±V

= 4 V BF966S I

G2S

BF966SA I
BF966SB I

= 4 V, ID = 20 mA –V

G2S

= 0, ID = 20 mA –V

G1S

(BR)DS

(BR)G1SS

(BR)G2SS

G1SS

G2SS

DSS
DSS
DSS

G1S(OFF)

G2S(OFF)

20 V

8 14 V

8 14 V

4 18 mA
4 10.5 mA

9.5 18 mA

50 nA

50 nA

2.5 V

2.0 V

Electrical AC Characteristics

VDS = 15 V, ID = 10 mA, V

Parameter Test Conditions Symbol Min Typ Max Unit
Forward transadmittance y
Gate 1 input capacitance C
Gate 2 input capacitance V
Feedback capacitance C
Output capacitance C
Power gain GS = 2 mS, GL = 0.5 mS, f = 200 MHz G

AGC range V
Noise figure GS = 2 mS, GL = 0.5 mS, f = 200 MHz F 1.0 dB

= 4 V, f = 1 MHz , T

G2S

G1S

= 0, V

= 4 V C

G2S

GS = 3,3 mS, GL = 1 mS, f = 800 MHz G

= 4 to –2 V, f = 800 MHz

G2S

= 25_C, unless otherwise specified

amb

 15 18.5 mS

21s
issg1
issg2

rss

oss

ps
ps

D

G

ps

2.2 2.6 pF

1.1 pF
25 35 fF

0.8 1.2 pF
25 dB
18 dB

40 dB

GS = 3,3 mS, GL = 1 mS, f = 800 MHz F 1.8 dB

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Document Number 85004

Rev. 3, 20-Jan-99

BF966S

Vishay Telefunken

Typical Characteristics (T

300

250

200

150

100

50

tot

P – Total Power Dissipation ( mW )

0

0 20 40 60 80 100 120 140 160

T

– Ambient Temperature ( °C )96 12159

amb

Figure 1. Total Power Dissipation vs.

Ambient Temperature

36
32
28
24
20
16
12

8

D

I – Drain Current ( mA )

4
0

0246810121416

Figure 2. Drain Current vs. Drain Source Voltage

V

=2V

G1S

V

=4V

G2S

VDS – Drain Source Voltage ( V )12762

1.5V
1V

= 25_C unless otherwise specified)

amb

80
70

VDS=15V

60
50
40
30
20

D

I – Drain Current ( mA )

10

0

–1012345

V

– Gate 2 Source Voltage ( V )12764

G2S

Figure 4. Drain Current vs. Gate 2 Source Voltage

4.0
VDS=15V

3.5

V

=4V

G2S

f=1MHz

0

0 3 6 9 12 15 18 21 24 27 30

ID – Drain Current ( mA )12765

0.5V

0V

–0.5V

–1V

3.0

2.5

2.0

1.5

1.0

0.5

issg1

C – Gate 1 Input Capacitance ( pF )

Figure 5. Gate 1 Input Capacitance vs. Drain Current

V

=4V

G1S

3V

2V

1V

0V

–1V

100

90

VDS=15V

80
70
60
50
40
30

D

20

I – Drain Current ( mA )

10

0

–1012345

V

– Gate 1 Source Voltage ( V )12763

G1S

V

=6V

G2S

5V

4V

3V
2V

1V

0V

–1V

Figure 3. Drain Current vs. Gate 1 Source Voltage

Document Number 85004
Rev. 3, 20-Jan-99

2.00

1.75

1.50

1.25

1.00

0.75

0.50

oss

C – Output Capacitance ( pF )

0.25
0

0 2 4 6 8 101214161820

VDS – Drain Source Voltage ( V )12766

V

=4V

G2S

I

=10mA

D

f=1MHz

Figure 6. Output Capacitance vs. Drain Source Voltage

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