VISHAY BF966S Technical data

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N–Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode

Electrostatic sensitive device.
Observe precautions for handling.

Applications

Input- and mixer stages especially UHF-tuners.

Features

D

Integrated gate protection diodes

D

High cross modulation performance

D

Low noise figure

D

High AGC-range

D

Low feedback capacitance

D

Low input capacitance

BF966S

Vishay Telefunken

2

94 9307

3

4

96 12647

1

G

2

G

1

BF966S Marking: BF966S
Plastic case (TO 50)

12623

1=Drain, 2=Source, 3=Gate 1, 4=Gate 2

Absolute Maximum Ratings

T

= 25_C, unless otherwise specified

amb

Parameter Test Conditions Type Symbol Value Unit
Drain - source voltage V
Drain current I
Gate 1/Gate 2 - source peak current ±I
Total power dissipation T
Channel temperature T
Storage temperature range T

≤ 60 °C P

amb

DS

D

G1/G2SM

tot
Ch
stg

D

20 V
30 mA

10 mA
200 mW
150

–55 to +150

S

°

C

°

C

Maximum Thermal Resistance

T

= 25_C, unless otherwise specified

amb

Parameter Test Conditions Symbol Value Unit

Channel ambient on glass fibre printed board (40 x 25 x 1.5) mm

plated with 35mm Cu

Document Number 85004
Rev. 3, 20-Jan-99

3

R

thChA

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450 K/W

1 (8)

BF966S

DS G1S G2S

g

g

Vishay Telefunken

Electrical DC Characteristics

T

= 25_C, unless otherwise specified

amb

Parameter Test Conditions Type Symbol Min Typ Max Unit

Drain - source
breakdown voltage

Gate 1 - source
breakdown voltage

Gate 2 - source
breakdown voltage

Gate 1 - source
leakage current

Gate 2 - source
leakage current

Drain current VDS = 15 V, V

Gate 1 - source
cut-off voltage

Gate 2 - source
cut-off voltage

ID = 10 mA, –V

±I

= 10 mA, V

G1S

±I

= 10 mA, V

G2S

±V

= 5 V, V

G1S

±V

= 5 V, V

G2S

VDS = 15 V, V

VDS = 15 V, V

= –V

G1S

G2S

G1S

= VDS = 0 ±I

G2S

= VDS = 0 ±I

G1S

= 0, V

G1S

= 4 V V

G2S

= VDS = 0 ±V

= VDS = 0 ±V

= 4 V BF966S I

G2S

BF966SA I
BF966SB I

= 4 V, ID = 20 mA –V

G2S

= 0, ID = 20 mA –V

G1S

(BR)DS

(BR)G1SS

(BR)G2SS

G1SS

G2SS

DSS
DSS
DSS

G1S(OFF)

G2S(OFF)

20 V

8 14 V

8 14 V

4 18 mA
4 10.5 mA

9.5 18 mA

50 nA

50 nA

2.5 V

2.0 V

Electrical AC Characteristics

VDS = 15 V, ID = 10 mA, V

Parameter Test Conditions Symbol Min Typ Max Unit
Forward transadmittance y
Gate 1 input capacitance C
Gate 2 input capacitance V
Feedback capacitance C
Output capacitance C
Power gain GS = 2 mS, GL = 0.5 mS, f = 200 MHz G

AGC range V
Noise figure GS = 2 mS, GL = 0.5 mS, f = 200 MHz F 1.0 dB

= 4 V, f = 1 MHz , T

G2S

G1S

= 0, V

= 4 V C

G2S

GS = 3,3 mS, GL = 1 mS, f = 800 MHz G

= 4 to –2 V, f = 800 MHz

G2S

= 25_C, unless otherwise specified

amb

 15 18.5 mS

21s
issg1
issg2

rss

oss

ps
ps

D

G

ps

2.2 2.6 pF

1.1 pF
25 35 fF

0.8 1.2 pF
25 dB
18 dB

40 dB

GS = 3,3 mS, GL = 1 mS, f = 800 MHz F 1.8 dB

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Document Number 85004

Rev. 3, 20-Jan-99

BF966S

Vishay Telefunken

Typical Characteristics (T

300

250

200

150

100

50

tot

P – Total Power Dissipation ( mW )

0

0 20 40 60 80 100 120 140 160

T

– Ambient Temperature ( °C )96 12159

amb

Figure 1. Total Power Dissipation vs.

Ambient Temperature

36
32
28
24
20
16
12

8

D

I – Drain Current ( mA )

4
0

0246810121416

Figure 2. Drain Current vs. Drain Source Voltage

V

=2V

G1S

V

=4V

G2S

VDS – Drain Source Voltage ( V )12762

1.5V
1V

= 25_C unless otherwise specified)

amb

80
70

VDS=15V

60
50
40
30
20

D

I – Drain Current ( mA )

10

0

–1012345

V

– Gate 2 Source Voltage ( V )12764

G2S

Figure 4. Drain Current vs. Gate 2 Source Voltage

4.0
VDS=15V

3.5

V

=4V

G2S

f=1MHz

0

0 3 6 9 12 15 18 21 24 27 30

ID – Drain Current ( mA )12765

0.5V

0V

–0.5V

–1V

3.0

2.5

2.0

1.5

1.0

0.5

issg1

C – Gate 1 Input Capacitance ( pF )

Figure 5. Gate 1 Input Capacitance vs. Drain Current

V

=4V

G1S

3V

2V

1V

0V

–1V

100

90

VDS=15V

80
70
60
50
40
30

D

20

I – Drain Current ( mA )

10

0

–1012345

V

– Gate 1 Source Voltage ( V )12763

G1S

V

=6V

G2S

5V

4V

3V
2V

1V

0V

–1V

Figure 3. Drain Current vs. Gate 1 Source Voltage

Document Number 85004
Rev. 3, 20-Jan-99

2.00

1.75

1.50

1.25

1.00

0.75

0.50

oss

C – Output Capacitance ( pF )

0.25
0

0 2 4 6 8 101214161820

VDS – Drain Source Voltage ( V )12766

V

=4V

G2S

I

=10mA

D

f=1MHz

Figure 6. Output Capacitance vs. Drain Source Voltage

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BF966S

Vishay Telefunken

4.0
VDS=15V

3.6

3.2

V

=0

G1S

f=1MHz

2.8

2.4

2.0

1.6

1.2

0.8

0.4

issg2

C – Gate 2 Input Capacitance ( pF )

0

–3–2–10123456

V

– Gate 2 Source Voltage ( V )12767

G2S

Figure 7. Gate 2 Input Capacitance vs.

Gate 2 Source Voltage

10

f=200MHz

0
–10
–20
–30
–40

2

–50

21

S – Transducer Gain ( dB )

–60
–70

V

–5–4–3–2–10123

V

– Gate 1 Source Voltage ( V )12768

G1S

=–2...–3V

G2S

4V
3V
2V

1V

0V

–0.5V
–1V

Figure 8. Transducer Gain vs. Gate 1 Source Voltage

20
18
16

ID=5mA

14

f=1300MHz

1000MHz

ID=10mA

ID=20mA

12

400MHz

100MHz

700MHz

VDS=15V
V

=4V

G2S

f=100...1300MHz

10

11

8
6

Im ( y ) ( mS )

4
2
0

0 2 4 6 8 101214161820

Re (y11) ( mS )12770

Figure 10. Short Circuit Input Admittance

0.3

f=1300MHz

0.2
ID=5mA

10mA

0.1

12

Im ( y ) ( mS )

0.0

20mA

700MHz

1000MHz

VDS=15V
V

=4V

G2S

f=100...1300MHz

–0.1

0 0.1 0.2 0.3 0.4 0.5

Re (y12) ( mS )12772

Figure 11. Short Circuit Reverse Transfer Admittance

24
22

VDS=15V

f=1MHz

20
18
16

V

=4V

G2S

3V

14
12
10

8
6
4

21S

2

Y – Forward Transadmittance ( mS )

0

0V

0.5V

2V

1V

0 5 10 15 20 25 30

ID – Drain Current ( mA )12769

Figure 9. Forward Transadmittance vs. Drain Current

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5
0

f=100...1300MHz

–5
–10
–15

20mA

–20

21

–25

Im ( y ) ( mS )

–30

1300MHz

–35

VDS=15V

V

=4V

G2S

ID=5mA

10mA

1000MHz

f=100MHz

400MHz

700MHz

–40

–8 –4 0 4 8 12 16 20 24

Re (y21) ( mS )12771

Figure 12. Short Circuit Forward Transfer Admittance

Document Number 85004

Rev. 3, 20-Jan-99

BF966S

Vishay Telefunken

8
7
6
5
4

22

3

Im ( y ) ( mS )

2
1
0

0 0.5 1.0 1.5 2.0 2.5

ID=5mA

100MHz

f=1300MHz

700MHz

400MHz

Re (y22) ( mS )12773

ID=10mA

20mA

1000MHz

VDS=15V
V

=4V

G2S

f=100...1300MHz

Figure 13. Short Circuit Output Admittance

Document Number 85004
Rev. 3, 20-Jan-99

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BF966S

Vishay Telefunken

VDS = 15 V, ID = 5 to 20 mA, V

S

11

j

S

21

180°

j0.5

j0.2

0

–j0.2

12 924

–j0.5

0.2

0.5

1300MHz

1

1000

–j

Figure 14. Input reflection coefficient

90°

120°

400

150°

100

700

j2

2

5

400

700

–j2

60°

1000

1300MHz

0.8 1.6

= 4 V , Z0 = 50

G2S

S

j5

1

100

–j5

S

30°

0°

W

12

90°

120°

150°

1300MHz

1000

180°

–150°

–120° –60°

12 925

Figure 16. Reverse transmission coefficient

22

j0.5

j0.2

0

0.2

0.5

100

–90°

j

1

400

0.008 0.016

2

60°

30°

ID= 20mA

10mA

–30°

5mA

j2

5

100

0°

j5

1

–150°

–120° –60°

12 926

–90°

Figure 15. Forward transmission coefficient

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ID= 20mA

10mA

–30°

–30°

5mA

–j0.2

1300MHz

–j0.5

12 927

–j

Figure 17. Output reflection coefficient

Document Number 85004

700

–j5

–j2

Rev. 3, 20-Jan-99

Dimensions in mm

BF966S

Vishay Telefunken

96 12242

Document Number 85004
Rev. 3, 20-Jan-99

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BF966S

Vishay Telefunken

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their

impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as

ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and

forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application

by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the

buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or

indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: [phone], Fax number: 49 (0)7131 67 2423

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Document Number 85004

Rev. 3, 20-Jan-99