VISHAY BF961 Technical data

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BF961

Vishay Semiconductors

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features

• Integrated gate protection diodes

• High cross modulation performance

• Low noise figure

• High AGC-range

• Low feedback capacitance

• Low input capacitance

Applications

Input- and mixer stages especially for FM- and VHF TV-tuners up to 300 MHz.

Mechanical Data

Case: TO-50 Plastic case Weight: approx. 124 mg Marking: BF961 Pinning:

1 = Drain, 2 = Source, 3 = Gate 1, 4 = Gate 2

3

4

2

1

G

2

G

1

Electrostatic sensitive device.

Observe precautions for handling.

D

S

13625

Parts Table

Par t Ordering Ccode Marking Package

BF961 BF961A or BF961B BF961 TO50

BF961A BF961A BF961 TO50

BF961B BF961B BF961 TO50

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Symbol Val ue Unit

Drain - source voltage V

Drain current I

Gate 1/Gate 2 - source peak current

Total power dissipation T

Channel temperature T

Storage temperature range T

≤ 60 °C P

amb

± I

G1/G2SM

DS

D

tot

Ch

stg

20 V

30 mA

10 mA

200 mW

150 °C

- 55 to + 150 °C

Maximum Thermal Resistance

Parameter Test condition Symbol Val ue Unit

Channel ambient

1)

on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35 µm Cu

1)

R

thChA

450 K/W

Document Number 85002 Rev. 1.5, 25-Nov-04

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1

BF961

Vishay Semiconductors

Electrical DC Characteristics

T

= 25 °C, unless otherwise specified

amb

Paramete r Test condition Part Symbol Min Ty p. Max Unit

Drain - source breakdown

= 10 µA, - V

I

D

voltage Gate 1 - source breakdown

voltage Gate 2 - source breakdown

voltage Gate 1 - source leakage current ± V

Gate 2 - source leakage current ± V

Drain current V

Gate 1 - source cut-off voltage V

Gate 2 - source cut-off voltage V

± I

G1S

± I

G2S

G1S

G2S

= 15 V, V

DS

= 15 V, V

DS

= 20 µA

I

D

= 15 V, V

DS

= 10 mA, V

= 5 V, V

Electrical AC Characteristics

T

= 25 °C, unless otherwise specified

amb

V

= 15 V, ID = 10 mA, V

DS

Paramete r Test condition Symbol Min Ty p. Max Unit

Forward transadmittance | y

Gate 1 input capacitance C

Gate 2 input capacitance V

Feedback capacitance C

Output capacitance C

Power gain G

AGC range V

Noise figure G

= 4 V, f = 1 MHz

G2S

G1S

S

f = 200 MHz

G2S

S

f = 200 MHz

= 0, V

= 2 mS, GL = 0.5 mS,

= 4 to - 2 V, f = 200 MHz ∆G

= 2 mS, GL = 0.5 mS,

G1S

= - V

G2S

G1S

= 0, V

= 4 V V

G2S

= VDS = 0 ± V

G2S

= VDS = 0 ± V

G1S

= VDS = 0 ± I

= 4 V BF961 I

G2S

BF961A I

BF961B I

= 4 V,

G2S

= 0, ID = 20 µA- V

G1S

= 4 V C

G2S

VISHAY

(BR)DS

(BR)G1SS

(BR)G2SS

G1SS

G2SS

DSS

- V

G1S(OFF)

G2S(OFF)

|12 15 mS

21s

issg1

issg2

rss

oss

G

ps

F1.82.5dB

20 V

814V

100 nA

420mA

4 10.5 mA

9.5 20 mA

3.5 V

3.7 pF

1.6 pF

25 fF

1.6 pF

20 dB

50 dB

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

300

250

200

150

100

50

tot

P -Total Power Dissipation ( mW )

0

0 20 4 0 6 0 80 100 120 140 160

96 12159

T

- Ambient Temperature ( °C)

amb

Figure 1. Total Power Dissipation vs. Ambient Temperature

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22

20

18

16

14

12

10

8

6

D

I – Drain Current ( mA)

4

2

0

024681012141618202224

96 12160

VDS– Drain Source Voltage(V)

V

G1S

Figure 2. Drain Current vs. Drain Source Voltage

= 0.6 V

0.4 V

0.2 V

0

–0.2 V

–0.4 V

–0.6 V

–0.8 V

Document Number 85002

Rev. 1.5, 25-Nov-04

VISHAY

BF961

Vishay Semiconductors

24 22 20

VDS=15V

I

=10mA

DS

V

= 0.5 V

G1S

18 16

0V 14 12 10

8 6

–0.5 V

4 2

21S

0

Y – ForwardTransadmittance ( mS )

–2–10123456

V

96 12161

– Gate 2 Source Voltage(V)

G2S

Figure 3. Forward Transadmittance vs. Gate 2 Source Voltage

22

VDS=15V

20

f=1MHz

18

16

14

12

10

8

6

0V

4

2

21S

Y – ForwardTransadmittance ( mS )

0

-2 -1.5 -1 -0.5 0 0.5 1 1.5 2 2.5 3 3.5

V

96 12162

- Gate 1 Source Voltage ( V )

G1S

V

=5V

G2S

4V

3V

2V 1V

4.0

3.6

3.2

2.8

VDS=15V

=0

V

G1S

f=1MHz

2.4

2.0

1.6

1.2

0.8

0.4

issg2

C – Gate 2 Input Capacitance ( pF )

0.0 –2–101234567

V

96 12164

– Gate 2 Source Voltage(V)

G2S

Figure 6. Gate 2 Input Capacitance vs. Gate 2 Source Voltage

3.0

V

=4V

G2S

f=1MHz

2.5

2.0

1.5

1.0

oss

0.5

C – Output Capacitance ( pF )

0.0

0246810121416182022

96 12165

VDS- Drain Source V oltage ( V )

Figure 4. Forward Transadmittance vs. Gate 1 Source Voltage

4.0

3.5

3.0

2.5

VDS=15V

=4V

V

G2S

f=1MHz

2.0

1.5

1.0

0.5

issg1

C – Gate 1 Input Capacitance ( pF )

0.0 –2.0–1.5–1.0–0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0

V

96 12163

– Gate 1 Source Voltage(V)

G1S

Figure 5. Gate 1 Input Capacitance vs. Gate 1 Source Voltage

Document Number 85002 Rev. 1.5, 25-Nov-04

Figure 7. Output Capacitance vs. Drain Source Voltage

18

600 MHz

400 MHz

f =700 MHz

500 MHz

VDS=15V V

G2S

I

= 5...20 mA

D

f = 50...700 MHz

=4V

16

14

12

10

11

8

6

Im(y ) (mS)

4

2

300 MHz

200 MHz

100 MHz

0

012345678910

96 12166

Re (y11)(mS)

Figure 8. Short Circuit Input Admittance

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3

BF961

Vishay Semiconductors

10

VDS=15V

5

0

–5

–10

21

–15

Im(y ) (mS)

–20

–25

–30

0 2 4 6 8 10121416182022242628

96 12167

Figure 9. Short Circuit Forward Transfer Admittance

=4V

V

G2S

f = 50...700 MHz

ID=5mA 10 mA

20 mA

600 MHz

700 MHz

Re (y21)(mS)

f=50MHz

100 MHz

200 MHz

300 MHz

400 MHz

500 MHz

VISHAY

7.0

6.5

6.0

5.5 ID=5mA

5.0

4.5

4.0

3.5

22

3.0

2.5

Im(y ) (mS)

2.0

1.5

1.0

0.5

0.0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

96 12168

300 MHz

200 MHz

100 MHz

500 MHz

400 MHz

Re (y22)(mS)

Figure 10. Short Circuit Output Admittance

f = 700 MHz

600 MHz

ID=20mA

VDS=15V

=4V

V

G2S

I

= 5...20 mA

D

f = 50...700 MHz

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Document Number 85002

Rev. 1.5, 25-Nov-04

VISHAY

BF961

Vishay Semiconductors

VDS = 15 V, ID = 5 to 20 mA, V S

11

j

j0.5

j0.2

0

0.2 0.5 1 2 5

12920

S

21

I = 20 mA

D

I = 10 mA

D

I =5mA

D

–j0.2

–j0.5

Figure 11. Input Reflection Coefficient

180 °

–150°

700 MHz

120° 60°

200

50

500

–j

90°

400

700MHz

0.8 1.6

= 4 V, Z0 = 50 Ω

G2S

j2

j5

∞

50

100

–j5

300

–j2

30°

0°

–30 °

S

12

90 °

600

° –60°

–90 °

60 °

300

0.04 0.08

30 °

0°

–30°

12921

180°

–150 °

120°

150°

700 MHz

–120

Figure 13. Reverse Transmission Coefficient

S

22

j

j0.5

j0.2

0

0.2 0.5 1 2 5

–j0.2

700 MHz

j2

500

100

300

–j5

j5

∞

ı

12922

–120° –60°

Figure 12. Forward Transmission Coefficient

Document Number 85002 Rev. 1.5, 25-Nov-04

–90 °

12923

–j0.5

–j

–j2

Figure 14. Output Reflection Coefficient

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BF961

Vishay Semiconductors

Package Dimensions in mm

VISHAY

96 12242

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Document Number 85002

Rev. 1.5, 25-Nov-04

VISHAY

BF961

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

Document Number 85002 Rev. 1.5, 25-Nov-04

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VISHAY BF961 Technical data

Specifications and Main Features

Frequently Asked Questions

User Manual