VISHAY BF961 Technical data

查询BF961供应商

BF961

Vishay Semiconductors

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features

• Integrated gate protection diodes

• High cross modulation performance

• Low noise figure

• High AGC-range

• Low feedback capacitance

• Low input capacitance

Applications

Input- and mixer stages especially for FM- and VHF TV-tuners up to 300 MHz.

Mechanical Data

Case: TO-50 Plastic case Weight: approx. 124 mg Marking: BF961 Pinning:

1 = Drain, 2 = Source, 3 = Gate 1, 4 = Gate 2

3

4

2

1

G

2

G

1

Electrostatic sensitive device.

Observe precautions for handling.

D

S

13625

Parts Table

Par t Ordering Ccode Marking Package

BF961 BF961A or BF961B BF961 TO50

BF961A BF961A BF961 TO50

BF961B BF961B BF961 TO50

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Symbol Val ue Unit

Drain - source voltage V

Drain current I

Gate 1/Gate 2 - source peak current

Total power dissipation T

Channel temperature T

Storage temperature range T

≤ 60 °C P

amb

± I

G1/G2SM

DS

D

tot

Ch

stg

20 V

30 mA

10 mA

200 mW

150 °C

- 55 to + 150 °C

Maximum Thermal Resistance

Parameter Test condition Symbol Val ue Unit

Channel ambient

1)

on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35 µm Cu

1)

R

thChA

450 K/W

Document Number 85002 Rev. 1.5, 25-Nov-04

www.vishay.com

1

BF961

Vishay Semiconductors

Electrical DC Characteristics

T

= 25 °C, unless otherwise specified

amb

Paramete r Test condition Part Symbol Min Ty p. Max Unit

Drain - source breakdown

= 10 µA, - V

I

D

voltage Gate 1 - source breakdown

voltage Gate 2 - source breakdown

voltage Gate 1 - source leakage current ± V

Gate 2 - source leakage current ± V

Drain current V

Gate 1 - source cut-off voltage V

Gate 2 - source cut-off voltage V

± I

G1S

± I

G2S

G1S

G2S

= 15 V, V

DS

= 15 V, V

DS

= 20 µA

I

D

= 15 V, V

DS

= 10 mA, V

= 5 V, V

Electrical AC Characteristics

T

= 25 °C, unless otherwise specified

amb

V

= 15 V, ID = 10 mA, V

DS

Paramete r Test condition Symbol Min Ty p. Max Unit

Forward transadmittance | y

Gate 1 input capacitance C

Gate 2 input capacitance V

Feedback capacitance C

Output capacitance C

Power gain G

AGC range V

Noise figure G

= 4 V, f = 1 MHz

G2S

G1S

S

f = 200 MHz

G2S

S

f = 200 MHz

= 0, V

= 2 mS, GL = 0.5 mS,

= 4 to - 2 V, f = 200 MHz ∆G

= 2 mS, GL = 0.5 mS,

G1S

= - V

G2S

G1S

= 0, V

= 4 V V

G2S

= VDS = 0 ± V

G2S

= VDS = 0 ± V

G1S

= VDS = 0 ± I

= 4 V BF961 I

G2S

BF961A I

BF961B I

= 4 V,

G2S

= 0, ID = 20 µA- V

G1S

= 4 V C

G2S

VISHAY

(BR)DS

(BR)G1SS

(BR)G2SS

G1SS

G2SS

DSS

- V

G1S(OFF)

G2S(OFF)

|12 15 mS

21s

issg1

issg2

rss

oss

G

ps

F1.82.5dB

20 V

814V

100 nA

420mA

4 10.5 mA

9.5 20 mA

3.5 V

3.7 pF

1.6 pF

25 fF

1.6 pF

20 dB

50 dB

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

300

250

200

150

100

50

tot

P -Total Power Dissipation ( mW )

0

0 20 4 0 6 0 80 100 120 140 160

96 12159

T

- Ambient Temperature ( °C)

amb

Figure 1. Total Power Dissipation vs. Ambient Temperature

www.vishay.com 2

22

20

18

16

14

12

10

8

6

D

I – Drain Current ( mA)

4

2

0

024681012141618202224

96 12160

VDS– Drain Source Voltage(V)

V

G1S

Figure 2. Drain Current vs. Drain Source Voltage

= 0.6 V

0.4 V

0.2 V

0

–0.2 V

–0.4 V

–0.6 V

–0.8 V

Document Number 85002

Rev. 1.5, 25-Nov-04

VISHAY

BF961

Vishay Semiconductors

24 22 20

VDS=15V

I

=10mA

DS

V

= 0.5 V

G1S

18 16

0V 14 12 10

8 6

–0.5 V

4 2

21S

0

Y – ForwardTransadmittance ( mS )

–2–10123456

V

96 12161

– Gate 2 Source Voltage(V)

G2S

Figure 3. Forward Transadmittance vs. Gate 2 Source Voltage

22

VDS=15V

20

f=1MHz

18

16

14

12

10

8

6

0V

4

2

21S

Y – ForwardTransadmittance ( mS )

0

-2 -1.5 -1 -0.5 0 0.5 1 1.5 2 2.5 3 3.5

V

96 12162

- Gate 1 Source Voltage ( V )

G1S

V

=5V

G2S

4V

3V

2V 1V

4.0

3.6

3.2

2.8

VDS=15V

=0

V

G1S

f=1MHz

2.4

2.0

1.6

1.2

0.8

0.4

issg2

C – Gate 2 Input Capacitance ( pF )

0.0 –2–101234567

V

96 12164

– Gate 2 Source Voltage(V)

G2S

Figure 6. Gate 2 Input Capacitance vs. Gate 2 Source Voltage

3.0

V

=4V

G2S

f=1MHz

2.5

2.0

1.5

1.0

oss

0.5

C – Output Capacitance ( pF )

0.0

0246810121416182022

96 12165

VDS- Drain Source V oltage ( V )

Figure 4. Forward Transadmittance vs. Gate 1 Source Voltage

4.0

3.5

3.0

2.5

VDS=15V

=4V

V

G2S

f=1MHz

2.0

1.5

1.0

0.5

issg1

C – Gate 1 Input Capacitance ( pF )

0.0 –2.0–1.5–1.0–0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0

V

96 12163

– Gate 1 Source Voltage(V)

G1S

Figure 5. Gate 1 Input Capacitance vs. Gate 1 Source Voltage

Document Number 85002 Rev. 1.5, 25-Nov-04

Figure 7. Output Capacitance vs. Drain Source Voltage

18

600 MHz

400 MHz

f =700 MHz

500 MHz

VDS=15V V

G2S

I

= 5...20 mA

D

f = 50...700 MHz

=4V

16

14

12

10

11

8

6

Im(y ) (mS)

4

2

300 MHz

200 MHz

100 MHz

0

012345678910

96 12166

Re (y11)(mS)

Figure 8. Short Circuit Input Admittance

www.vishay.com

3