Silicon PNP Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For selfoscillating RF mixer stages.
Features
D
High gain
D
Low noise
BF569/BF569R
Vishay Semiconductors
1
94 9280
23
BF569 Marking: LH
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
13 581
BF569R Marking: LM
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
1
9510527
23
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Collector-base voltage –V
Collector-emitter voltage –V
Emitter-base voltage –V
Collector current –I
Total power dissipation T
Junction temperature T
Storage temperature range T
≤ 60 °C P
amb
CBO
CEO
EBO
C
tot
j
stg
13 581
40 V
35 V
3 V
30 mA
200 mW
150
–65 to +150
°
C
°
C
Maximum Thermal Resistance
T
= 25_C, unless otherwise specified
amb
Parameter T est Conditions Symbol Value Unit
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm
plated with 35mm Cu
Document Number 85000
Rev. 3, 20-Jan-99
3
R
thJA
450 K/W
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1 (5)
BF569/BF569R
Vishay Semiconductors
Electrical DC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Collector cut-off current –VCE = 40 V, VBE = 0 –I
Collector-base cut-off current –VCB = 20 V, IE = 0 –I
Emitter-base cut-off current –VEB = 2 V, IC = 0 –I
Collector-emitter breakdown voltage –IC = 1 mA, IB = 0 –V
DC forward current transfer ratio –VCE = 10 V, –IC = 3 mA h
Electrical AC Characteristics
T
= 25_C, unless otherwise specified
amb
CES
CBO
EBO
(BR)CEO
FE
100mA
100 nA
10
m
35 V
25 50 90
A
Parameter Test Conditions Sym-
Transition frequency –VCE = 10 V, –IC = 3 mA, f = 300 MHz f
Collector-base capacitance –VCB = 10 V, f = 1 MHz C
Noise figure –VCE = 10 V, –IC = 3 mA, ZS = 50 W,
ZL = 500 W, f = 800 MHz
Power gain –VCE = 10 V, –IC = 3 mA, ZS = 50 W,
Z
= 500 W, f = 800 MHz
L
Typical Characteristics (T
300
250
200
150
100
50
tot
P – Total Power Dissipation ( mW )
0
0 20 40 60 80 100 120 140 160
T
– Ambient Temperature ( °C )96 12159
amb
Figure 1. Total Power Dissipation vs.
Ambient Temperature
= 25_C unless otherwise specified)
amb
1200
1000
800
600
400
200
T
f – Transition Frequency ( MHz )
Figure 2. Transition Frequency vs. Collector Current
–VCB=10V
f=300MHz
0
03691215
–I
Min Typ Max Unit
bol
T
cb
1000 MHz
0.35 pF
F 4.2 5.0 dB
G
– Collector Current ( mA )12847
C
13 14.5 dB
pb
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2 (5)
Document Number 85000
Rev. 3, 20-Jan-99
1.0
0.8
0.6
0.4
0.2
cb
C – Collector Base Capacitance ( pF )
0
0 4 8 12 16 20
–VCB – Collector Base Voltage ( V )12875
Figure 3. Collector Base Capacitance vs.
Collector Base Voltage
Dimensions of BF569 in mm
BF569/BF569R
Vishay Semiconductors
95 11346
Document Number 85000
Rev. 3, 20-Jan-99
www.vishay.com
3 (5)
BF569/BF569R
Vishay Semiconductors
Dimensions of BF569R in mm
95 11347
www.vishay.com
4 (5)
Document Number 85000
Rev. 3, 20-Jan-99
BF569/BF569R
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Document Number 85000
Rev. 3, 20-Jan-99
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
5 (5)
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