Vishay BF543 Schematic [ru]

Vishay Semiconductors
N-Channel MOS-Fieldeffect Triode, Depletion Mode
BF543
Features
• Integrated gate protection diode
• Low feedback capacitance
• Low noise figure
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
e3
32
G
D
and WEEE 2002/96/EC
S
Applications
• High frequency stages up to 300 MHz
Electrostatic sensitive device.
Observe precautions for handling.
Mechanical Data
Case: SOT-23 Plastic case Weight: approx. 8.0 mg Pinning: 1 = Source, 2 = Gate, 3 = Drain
Parts Table
Part Ordering Code Type marking Remarks
BF543A BF543A-GS08 LD Tape and Reel
BF543B BF543B-GS08 LD Tape and Reel
19240
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Val ue Unit
Drain - source voltage V
Drain current I
Gate - source peak current ± I
Total power dissipation T
Channel temperature T
Storage temperature range T
60 °C P
amb
Maximum Thermal Resistance
Parameter Test condition Symbol Val ue Unit
Channel ambient
1)
on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 µm Cu
Document Number 85072 Rev. 1.6, 18-Jan-06
1)
R
DS
D
GSM
tot
Ch
stg
thChA
20 V
30 mA
10 mA
200 mW
150 °C
- 55 to +150 °C
450 K/W
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1
BF543
Vishay Semiconductors
Electrical DC Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Part Symbol Min Ty p. Max Unit
Drain - source breakdown voltage
Gate - source breakdown voltage
Gate - source leakage current ± V
Drain current V
Gate - source cut-off voltage V
Electrical AC Characteristics
T
= 25 °C, unless otherwise specified
amb
V
= 10 V, ID = 4 mA, f = 1 MHz
DS
Paramete r Test condition Symbol Min Ty p. Max Unit
Forward transadmittance |y
Gate 1 input capacitance C
Feedback capacitance C
Output capacitance C
Noise figure G
Power gain G
= 10 µA, - VGS = 4 V V
I
D
= 10 mA, VDS = 0 ± V
± I
GS
= 6 V, VDS = 0 ± I
GS
= 10 V, VGS = 0 I
DS
BF543A I
BF543B I
= 10 V, ID = 20 µA - V
DS
= 2 mS, GL = 0.5 mS,
S
f = 200 MHz
= 2 mS, GL = 0.5 mS,
S
f = 200 MHz
(BR)DS
(BR)GSS
GSS
DSS
DSS
DSS
GS(OFF)
|9.5 12 mS
21s
issg1
rss
oss
20 V
7.5 12 V
50 nA
1.5 8.0 mA
1.5 6.5 mA
4.0 8.0 mA
2.5 V
2.7 pF
25 fF
0.9 pF
F1.0dB
G
ps
22 dB
Package Dimensions in mm (Inches)
0.1 (.004) max.
0.4 (.016)0.4 (.016)
3.1 (.122)
2.8 (.110)
0.4 (.016)
1.20(.047)
1.43 (.056)
0.95 (.037)0.95 (.037)
0.175 (.007)
0.098 (.005)
2.0 (0.079)
2.6 (.102)
2.35 (.092)
Mounting Pad Layout
0.52 (0.020)
0.9 (0.035)
0.95 (0.037)0.95 (0.037)
1.15 (.045)
0.95 (.037)
ISO Method E
17418
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Document Number 85072
Rev. 1.6, 18-Jan-06
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