Vishay BB639, BB659 Schematic [ru]

Silicon Variable Capacitance Diodes

g

• For tuning of extended frequency band

in VHF TV / VTR tuners

• High capacitance ratio

• Low series inductance

• Low series resistance

• Excellent uniformity and matching due to

"in-line" matching assembly procedure

• Pb-free (RoHS compliant) package

BB639
BB659

BB639/BB659...



Type Package Configuration L

BB639
BB659

SOD323
SCD80

single
single

(nH) Marking

S

1.8

0.6

yellow S
DE

Maximum Ratings at TA = 25°C, unless otherwise specified

Parameter Symbol Value Unit

Diode reverse voltage V

Peak reverse voltage

V

R

RM

30 V

35

( R ≥ 5kΩ )

Forward current I

Operating temperature range T

Storage temperature T

F

op

st

20 mA

-55 ... 150

-55 ... 150

°C

1

2011-06-15

BB639/BB659...

c

c

c

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Reverse current

= 30 V

V

R

= 30 V, TA = 85 °C

V

R

AC Characteristics

Diode capacitance

V

= 1 V, f = 1 MHz

R

V

= 2 V, f = 1 MHz

R

V

= 25 V, f = 1 MHz

R

V

= 28 V, f = 1 MHz

R

Capacitance ratio

V

= 1 V, VR = 28 V, f = 1 MHz

R

Capacitance ratio

V

= 2 V, VR = 25 V, f = 1 MHz

R

Capacitance matching1)

V

= 1 V, VR = 28 V, f = 1 MHz, 7 diode sequen

R

BB639

I

R

C

T

C

T1/CT28

C

T2/CT25

∆C

T/CT

-

-

36

27.7

2.5

2.4

-

-

38.3

29.75

2.85

2.6

10

200

40

31.8

3.2

2.9

13.5 14.7 -

9.8 10.4 -

-

-

2.5

nA

pF

%

V

= 1 V, VR = 28 V, f = 1 MHz, 4 diode sequen

R

BB659

V

= 1 V, VR = 28 V, f = 1 MHz, 7 diode sequen

R

BB659

Series resistance

V

= 5 V, f = 470 MHz

R

1

For details please refer to Application Note 047.

-

-

r

S

- 0.65 0.7 Ω

0.3

0.4

1

2

2

2011-06-15

BB639/BB659...

Diode capacitance CT = ƒ (VR)

f = 1MHz

40

pF

30

T

25

C

20

15

10

5

0

0 5 10 15 20

Temperature coefficient of the diode

capacitance

-3

10

1/°C

C

TC

-4

10

-5

V

30

V

R

10

10

T

= ƒ (VR)

Cc

0

10

1

V

V

2

10

R

Reverse current IR = ƒ (TA)

V

= 28V

R

3

10

pA

2

10

R

I

1

10

0

10

-30 -10 10 30 50 70

°C

Reverse current IR = ƒ(VR)

T

= Parameter

A

3

10

pA

2

10

R

I

1

10

0

10

-1

10

100

T

A

10

0

10

85°C

25°C

1

V

V

2

10

R

3

2011-06-15