VISHAY BAV99-V User Manual

Small Signal Switching Diode, Dual

Features

• Fast switching speed

• High conductance

• Surface mount package ideally suited for
automatic insertion

• Connected in series

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

Mechanical Data

Case: SOT23 Plastic case
Weight: approx. 8.8 mg
Packaging Codes/Options:

GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box

e3

BAV99-V

Vishay Semiconductors

3

12

18109

Parts Table

Part Ordering code Marking Remarks

BAV99-V BAV99-V-GS18 or BAV99-V-GS08 JE Tape and Reel

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Symbol Val ue Unit

Non repetitive peak reverse
voltage

Repetitive peak reverse voltage
= Working peak reverse voltage
= DC Blocking voltage

Peak forward surge current t

Average forward current half wave rectification with

Forward current on ceramic substrate

Power dissipation on ceramic substrate

= 1s I

p

t

= 1 µs I

p

resistive load and f ≥ 50 MHz, on
ceramic substrate
10 mm x 8 mm x 0.7 mm

10 mm x 8 mm x 0.7 mm

10 mm x 8 mm x 0.7 mm

V

RRM

= V

V

FSM

FSM

I

FAV

P

RM

RWM

I

F

tot

= V

R

100 V

70 V

1A

4.5 A

150 mA

250 mA

300 mW

Document Number 85718

Rev. 1.7, 09-Mar-06

www.vishay.com

1

BAV99-V

Vishay Semiconductors

Thermal Characteristics

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Symbol Value Unit

Junction ambient on ceramic substrate

10 mm x 8 mm x 0.7 mm

Junction and storage
temperature range

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Symbol Min Ty p . Max Unit

Forward voltage I

Reverse current V

Diode capacitance V

Reverse recovery time I

= 1 mA V

F

I

= 10 mA V

F

I

= 50 mA V

F

= 150 mA V

I

F

= 70 V I

R

V

= 70 V, Tj = 150 °C I

R

V

= 25 V, Tj = 150 °C I

R

= 0, f = 1 MHz C

R

= 10 mA to IR = 1 mA,

F

= 6 V, RL = 100 Ω

V

R

R

thJA

= T

T

j

stg

F

F

F

F

R

R

R

D

t

rr

430 K/W

- 55 to + 150 °C

715 mV

855 mV

1V

1.25 V

2.5 µA

50 µA

30 µA

1.5 pF

6ns

Typical Characteristics

T

= 25 °C, unless otherwise specified

amb

1000

100

= 100 °CT

j

10

1

0.1

F

I - Forward Current (mA)

0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

14356

Figure 1. Forward Current vs. Forward Voltage

VF- Forward Voltage (V)

25 °C

Figure 2. Peak forward current IFM = f (t

)

p

www.vishay.com

2

Document Number 85718

Rev. 1.7, 09-Mar-06