Vishay BAV99 Schematic [ru]
www.vishay.com
18109
12
3
Small Signal Switching Diode, Dual in Series
MECHANICAL DATA
Case: SOT-23
Weight: approx. 8.8 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
BAV99
Vishay Semiconductors
FEATURES
• Fast switching speed
• High conductance
• Surface mount package ideally suited for
automatic insertion
• Connected in series
• AEC-Q101 qualified
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PARTS TABLE
PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS
BAV99
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Non repetitive peak reverse voltage V
Repetitive peak reverse voltage
= working peak reverse voltage
= DC blocking voltage
Peak forward surge current
Average forward current
Forward current
Power dissipation
THERMAL CHARACTERISTICS (T
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction ambient
Junction and storage temperature range T
Operating temperature range T
BAV99-E3-08 or BAV99-E3-18
BAV99-HE3-08 or BAV99-HE3-18
= 25 °C, unless otherwise specified)
amb
Half wave rectification with resistive load
and f 50 MHz, on ceramic substrate
10 mm x 8 mm x 0.7 mm
10 mm x 8 mm x 0.7 mm
10 mm x 8 mm x 0.7 mm
= 25 °C, unless otherwise specified)
amb
10 mm x 8 mm x 0.7 mm
Dual diodes serial JE Tape and reel
RM
= V
V
RRM
RWM
t
= 1 s
p
= 1 μs 4.5
t
p
On ceramic substrate
On ceramic substrate
On ceramic substrate
I
FSM
I
F(AV)
P
R
= T
j
I
F
tot
thJA
op
stg
= V
100
R
70
1
150
250
300 mW
430 K/W
- 55 to + 150 °C
- 55 to + 150 °C
V
A
mA
Rev. 1.9, 16-May-13
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 85718
www.vishay.com
I - Forward Current (mA)
0.01
0.1
1
10
100
1000
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
F
-
Forward Voltage (V)
14356
F
Tj = 100 °C
25 °C
22290
10
2
10
1
10
-1
10
-2
10
-5
10
-6
10
-3
10
-4
10
-1
10
-2
10
-0
10
0
/
FM
t
s
D = 0.005
0.01
0.02
0.05
0.1
0.2
t
p
t
p
D =
T
T
17451
15 (0.59)
12 (0.47)
0.8 (0.03)
5 (0.2)
7.5 (0.3)
3 (0.12)
1 (0.4)
1 (0.4)
2 (0.8)
2 (0.8)
1.5 (0.06)
5.1 (0.2)
BAV99
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (T
= 25 °C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
I
Forward voltage
Reverse current
V
V
Diode capacitance V
I
= 10 mA to iR = 1 mA,
Reverse recovery time
F
V
TYPICAL CHARACTERISTICS (T
= 1 mA
F
I
= 10 mA 0.855 V
F
I
= 50 mA 1 V
F
I
= 150 mA 1.25 V
F
V
= 70 V
R
= 70 V, Tj = 150 °C 50 μA
R
= 25 V, Tj = 150 °C 30 μA
R
= 0, f = 1 MHz C
R
= 6 V, RL = 100
R
= 25 °C, unless otherwise specified)
amb
V
F
I
R
D
t
rr
0.715 V
2500 nA
1.5 pF
6ns
Fig. 1 - Forward Current vs. Forward Voltage Fig. 2 - Peak forward current /
LAYOUT FOR R
thJA
TEST
Thickness:
Fiberglass 1.5 mm (0.059 inches)
Copper leads 0.3 mm (0.012 inches)
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 1.9, 16-May-13
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
= f (t
FM
2
Document Number: 85718
)
p
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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