Datasheet BAV99 Datasheet (Fairchild)

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April 2014

BAV99 200 mA 70 V High Conductance Ultra-Fast Switching Diode

BAV99 — 200 mA 70 V High Conductance Ultra-Fast Switching Diode

Features

• High Conductance: IF = 200 mA

• Fast Switching Speed: t

• Small Plastic SOT-23 Package

• Series-Pair Configuration

< 6 ns Maximum

Applications

• High-Speed Switching Applications

SOT-23

Description

The BAV99 is a 350 mW high-speed switching diode array with series-pair diode configuration. It achieves high-current conductivity, up to 200 mA, in a very small

footprint. These features make the BAV99 optimal

7mm for area-constrained applications that need a little extra power capability.

For common cathode and common anode high-speed switching diodes, explore Fairchild's BAV70 and BAW56. Looking for more options in the SOT-23 package? Check Fairchild's MMBD family.

Connection Diagram

Ordering Information

Part Number Marking Package Packing Method

BAV99 A7 SOT-23 3L Tape and Reel, Reel 7 inch

BAV99_D87Z A7 SOT-23 3L Tape and Reel, Reel 13 inch

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BAV99 — 200 mA 70 V High Conductance Ultra-Fast Switching Diode

Absolute Maximum Ratings

(1)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating cond itions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T

= 25°C unless otherwise noted.

Symbol Parameter Value Unit

RRM

F(AV)

FSM

STG

Note:

1. These ratings are based on a maximum junction temperature of 150°C. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty cycle operations.

Thermal Characteristics

V a lues are at TA = 25°C unless otherwise noted.

Maximum Repetitive Reverse Voltage 70 V Average Rectified Forward Current 200 mA

Non-Repetitive Peak Forward Surge Current

Pulse Width = 1.0 Second 1.0 Pulse Width = 300 Microseconds 8.0

Storage Temperature Range -55 to +150 °C Operating Junction T emperature Range -55 to +150 °C

(2)

Symbol Parameter Value Unit

θJA

Note:

2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

Power Dissipation 350 mW Thermal Resistance, Junction to Ambient 357 °C/W

Electrical Characteristics

V a lues are at TA = 25°C unless otherwise noted.

Symbol Parameter Conditions Min. Max. Unit

Breakdown Voltage, per Diode IR = 100 μA70 V

Forward Voltage, per Diode

Reverse Leakage, per Diode

IF = 1 mA 715 I

= 10 mA 855

= 50 mA 1.00

= 150 mA 1.25

= 70 V 2.5

= 25 V, TA = 150°C30.0

= 70 V, TA = 150°C50.0

μAV

Total Capacitance, per Diode VR = 0 V, f = 1.0 MHz 1.5 pF

= IR = 10 mA,

Reverse-Recovery Time, per Diode

= 1 mA,

= 100 Ω

6.0 ns

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Typical Performance Characteristics

110

120

130

140

150

1 2 3 5 10 20 30 50 100

Ta= 25 C

Reverse Voltage, V

[V]

Reverse Current, IR [uA]

100

150

200

250

300

10 20 3 0 5 0 70 100

Ta= 25 C

Reverse Current, I

[nA]

Reverse Voltage, V

]

250

300

350

400

450

1 2 3 5 1 0 20 30 50 100

Ta= 25 C

Forward Voltage, V

[mV]

Forward Current, I

[uA

]

450

500

550

600

650

700

0.1 0 .2 0.3 0 .5 1 2 3 5 10

Ta= 25 C

Forward Voltage, V

[mV]

Forward Current, I

[mA

]

0.6

0.8

1.0

1.2

1.4

10 20 3 0 50 1 00 200 300 500

Ta= 25 C

Forward Voltage, V

[V]

Forward C urrent, I

[mA ]

02468101214

1.0

1.1

1.2

1.3

Ta= 25 C

Total Capacitance [pF]

Reverse Voltage [V]

BAV99 — 200 mA 70 V High Conductance Ultra-Fast Switching Diode

Figure 1. Reverse Voltage vs. Reverse Current

Figure 3. Forward Voltage vs. Forward Current

- 1 to 100 μA

Figure 2. Reverse Current vs. Reverse Voltage

Figure 4. Forward Voltage vs. Forward Current

- 0.1 to 10 mA

Figure 5. Forward Voltage vs. Forward Current

- 10 to 800 mA

Figure 6. Total Capacitance vs. Reverse Voltage

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Typical Performance Characteristics (Continued)

10 20 30 40 50 60

1.0

1.5

2.0

2.5

3.0

3.5

4.0

Ta= 25 C

Reverse Recovery Time [ns]

Reverse Current [mA]

0 50 100 150

100

200

300

400

F(AV)

- AVERAGE RECTIFIED CURRENT - m

Current [mA ]

Ambient Temperature, TA [ oC]

0 25 50 75 100 125 150 175 200

100

200

300

400

500

SOT-23 Pkg

Power Dissipation, P

[mW]

Average Temperature, [oC]

BAV99 — 200 mA 70 V High Conductance Ultra-Fast Switching Diode

Fi gu re 7. Re ve rs e- Re co ve ry Time vs.

Rev e rse C urre n t

Figure 9. Power Derating Curve

Figure 8. Average Rectified Current (I

Ambient Temperature (TA)

F(AV)

) vs.

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Physical Dimensions

LAND PATTERN

RECOMMENDATION

NOTES: UNLESS OTHERWISE SPECIFIED

A) REFERENCE JEDEC REGISTRATION

TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10

SEE DETAIL A

SEATING PLANE

SCALE: 2X

GAGE PLANE

(0.55)

(0.93)

1.20 MAX

0.10

0.00

0.10 C

2.40±0.30

2.92±0.20

1.30

+0.20

-0.15

0.60

0.37

0.20 A B

1.90

0.95

(0.29)

0.95

1.40

2.20

1.00

1.90

0.25

0.23

0.08

0.20 MIN

SOT-23

BAV99 — 200 mA 70 V High Conductance Ultra-Fast Switching Diode

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/dwg/MA/MA03D.pdf

For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:

http://www.fairchildsemi.com/packing_dwg/PKG-MA03D.pdf

Figure 10. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE

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WHICH COVERS THESE PRODUCTS.

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EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

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safety or effectiveness.

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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

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Definition of Terms

Datasheet Identification

Product Status

Definition

Advance

Information

Formative

In Design

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary First Production

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed

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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I68

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