Vishay BAV70-V Schematic [ru]
18108
12
3
Small Signal Switching Diode, Dual
Features
• Silicon epitaxial planar diode
• Fast switching dual diode with common
cathode
• This diode is also available in other
configurations including:a dual common
anode to cathode with type designation
BAV99-V, a dual common anode with
type designation BAW56-V, and a single diode
with type designation BAL99-V.
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
BAV70-V
Vishay Semiconductors
Mechanical Data
Case: SOT-23
Weight: approx. 8.8 mg
Packaging Codes/Options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part Ordering code Marking Remarks
BAV70-V BAV70-V-GS18 or BAV70-V-GS08 JJ Tape and Reel
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test conditions Symbol Valu e Unit
Reverse voltage, peak reverse
voltage
Forward current (continuous)
Non repetitive peak forward
current
Power dissipation
1)
Device on fiberglass substrate, see layout
= 1 µs I
t
p
= 1 ms I
t
p
= 1 s I
t
p
, V
V
R
RM
I
F
FSM
FSM
FSM
P
tot
70 V
250 mA
2A
1A
0.5 A
350
1)
mW
Document Number 85546
Rev. 1.8, 12-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
BAV70-V
22290
Vishay Semiconductors
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Para me ter Test conditions Symbol Valu e Unit
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
1)
Device on Fiberglass substrate, see layout on second page.
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Min. Ty p. Max. Unit
I
= 1 mA V
F
I
= 10 mA V
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
F
= 50 mA V
I
F
= 150 mA V
I
F
V
= 70 V I
R
= 70 V, Tj = 150 °C I
V
R
= 25 V, Tj = 150 °C I
V
R
= 0, f = 1 MHz C
V
R
= 10 mA to IR = 1 mA,
I
F
= 6 V, RL = 100 Ω
V
R
R
thJA
T
j
T
= T
j
stg
F
F
F
F
R
R
R
D
t
rr
430
1)
°C/W
150 °C
- 65 to + 150 °C
715 mV
855 mV
1V
1.25 V
2.5 µA
50 µA
30 µA
1.5 pF
6ns
Typical Characteristics
T
= 25 °C, unless otherwise specified
amb
1000
100
Tj = 100 °C
10
1
0.1
F
I - Forward Current (mA)
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
14356
Figure 1. Forward Current vs. Forward Voltage
VF- Forward Voltage (V)
25 °C
Figure 2. Peak Forward Current IFM = f (tp)
www.vishay.com
2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number 85546
Rev. 1.8, 12-Aug-10
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